MIMXRT1170HDUG
MIMXRT1170HDUG
Document Information
Information Content
Keywords MIMXRT1170, tightly-coupled memory (TCM), on-chip RAM (OCRAM)
Abstract The purpose of this document is to help hardware engineers design and test their MIMXRT1170
processor-based designs. It provides information about board layout recommendations and
design checklists to ensure first-pass success and avoid board bring-up problems.
NXP Semiconductors
MIMXRT1170HDUG
Hardware Development Guide for the MIMXRT1160/1170 Processor
1 Introduction
The purpose of this document is to help hardware engineers design and test their MIMXRT1170 processor-
based designs. It provides information about board layout recommendations and design checklists to ensure
first-pass success and avoid board bring-up problems. This guide is released along with the relevant device-
specific hardware documentation such as data sheets, reference manuals, and application notes available on
nxp.com.
Note: RT1160 shares the same design with RT1170, so engineers can also use this document for RT1160.
2 Background
The i.MX RT1170 is a new processor family featuring NXP advanced implementation of the high performance
Arm Cortex-M7 Core and power efficient Arm Cortex-M4 core. It provides high CPU performance and real-time
response.
The i.MX RT1170 has 2 MB of on-chip RAM in total. It includes a 512 kB RAM which can be flexibly configured
as tightly coupled memory (TCM) or general purpose on-chip RAM (OCRAM). The i.MX RT1170 integrates
advanced power management module with DC-DC and LDOs that reduce complexity of external power supply
and simplify power sequencing.
It provides various memory interfaces, including SDRAM, Raw NAND FLASH, NOR FLASH, SD/eMMC, Quad
SPI, Hyper RAM/Flash. It also provides a wide range of other interfaces for connecting external peripherals,
such as WLAN, Bluetooth, GPS, displays, and camera sensors. The i.MX RT1170 has rich audio and video
2
features, including MIPI CSI/DSI, LCD display, graphics accelerator, camera interface, S/PDIF, and I S audio
interface.
The i.MX RT1170 applications processor can be used in areas such as industrial HMI, IoT, high-end audio
appliance, low-end instrument cluster, point-of-sale (PoS), motor control, and home appliances.
3 Power supply
For power supply voltage specifications, refer to the operating ranges table in the device data sheets*. See
Table 1 and Table 2 for power supply decoupling recommendations.
Note: The Figure 1 in this section is applicable to RT1170 silicon. These tables do not include the on-chip LDO
output specification, which can be found in the device data sheet*.
Table 1. Processor supply capacitors when on-chip DC-DC regulators are used
1 1 1 1 1 1
Power rail 0.1 μF 0.22 μF 1 μF 2.2 μF 4.7 μF 22 μF Notes
DCDC_IN 1 1 1 Place 0402 under balls M5, N5.
Place 0603 as close as possible to
the processor.
DCDC_ANA 1 Place under ball M7
DCDC_ANA_SENSE 1 Place under ball M6
DCDC_DIG 1 1 Place 0402 under ball K8. Place
0603 as close as possible to the
processor.
DCDC_DIG_SENSE 1 Place under ball L7
VDDA_1P8_IN 1 Place under ball M11
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Table 1. Processor supply capacitors when on-chip DC-DC regulators are used...continued
1 1 1 1 1 1
Power rail 0.1 μF 0.22 μF 1 μF 2.2 μF 4.7 μF 22 μF Notes
VDD_SOC_IN_X 1 2 2 1 Place 0402 under balls H8, H10,
J8, J10, K10. Place 0603 as close
as possible to the processor.
VDD_LPSR_IN 1 Place under ball R12
VDD_LPSR_ANA 1 Place under ball P12
VDD_LPSR_DIG 1 Place under ball P11
VDD_SNVS_IN 1 Place under ball U12
VDD_SNVS_ANA 1 Place under ball U14
VDD_SNVS_DIG 1 Place under ball T14
VDD_USB_1P8 1 Place under ball H12, isolate from
1V8 source with series ferrite bead
(120 ohm@100MHz)
VDD_USB_3P3 1 Place under ball G12, isolate from
3V3 source with series ferrite bead
(120 ohm@100MHz)
VDDA_ADC_1P8 1 Place under ball K15
VDDA_ADC_3P3 1 Place under ball J13
VDDA_1P0 1 Place under ball N11
VDD_MIPI_1P8 1 Place under ball F9, isolate from
1V8 source with series ferrite bead
(120 ohm@100MHz)
VDD_MIPI_1P0 1 Place under ball F10, power source
is on-chip LDO regulator VDDA_1
P0
NVCC_SD1 1 Place under ball D14
NVCC_SD2 1 Place under ball G13
NVCC_EMC1_X 1 1 Place 2.2 μF under balls F6, F7
NVCC_EMC2_X 1 1 Place 2.2 μF under balls H6, J6
NVCC_GPIO 1 1 Place 2.2 μF under ball M12
NVCC_DISP1 1 Place under ball D12
NVCC_DISP2 1 Place under ball E7
NVCC_LPSR 1 Place under ball P7
NVCC_SNVS 1 Place under ball U11
2
ADC_VREFH 1 Place under ball G16
USB1_VBUS 1 Place under ball D17
USB2_VBUS 1 Place under ball D16
1. 0.1, 0.22, 1, 2.2, 4.7 μF are size 0402, type X5R. 22 µF is size 0603, type X5R.
2. Avoid using the internal DCDC/LDO output for the ADC reference. Use an external voltage reference, which
is more accurate.
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Table 2. Processor supply capacitors when external PMIC or regulators utilized (on-chip DC-DC regulators not
used)
1 1 1 1 1 1
Power rail 0.1 μF 0.22 μF 1 μF 2.2 μF 4.7 μF 22 μF Notes
VDD_SOC_IN_x 2 3 1 Place 0402 under balls H8, J8, J9,
J10, K10
VDD_LPSR_IN 1 Place under ball R12
VDD_LPSR_ANA 1 Place under ball P12
VDD_LPSR_DIG 1 Place under ball P11
VDDA_ADC_3P3 1 1 Place 1 μF under ball J13, place
0.1 μF near J13, isolate from 3V3
source with series ferrite bead (120
ohm@100MHz)
2
ADC_VREFH 1 Place under ball G16
VDDA_ADC_1P8 1 1 Place 1 μF under ball K15, place
4.7 μF near K15, isolate from 1V8
source with series ferrite bead (120
ohm@100MHz)
VDDA_1P8_IN 1 Place under ball M11
VDDA_1P0 1 Place under ball N11
VDD_SNVS_IN 1 Place under ball U12
VDD_SNVS_ANA 1 Place under ball U14
VDD_SNVS_DIG 1 Place under ball T14
NVCC_SNVS 1 Place under ball U11
NVCC_LPSR 1 Place under ball P7
NVCC_GPIO 1 1 Place 2.2 μF under ball M12
NVCC_SD1 1 Place under ball D14
NVCC_SD2 1 Place under ball G13
NVCC_DISP1 1 Place under ball D12
NVCC_DISP2 1 Place under ball E7
NVCC_EMC1_X 1 1 Place under balls F7, G6
NVCC_EMC2_X 1 1 Place under balls H6, J6
VDD_MIPI_1P8 1 Place under ball F9, isolate from
1V8 source with series ferrite bead
(120 ohm@100MHz)
VDD_MIPI_1P0 1 Place under ball F10, power source
is on-chip LDO regulator VDDA_1
P0
VDD_USB_1P8 1 Place under ball H12, isolate from
1V8 source with series ferrite bead
(120 ohm@100MHz)
VDD_USB_3P3 1 Place under ball G12, isolate from
3V3 source with series ferrite bead
(120 ohm@100MHz)
USB1_VBUS 1 Place under ball D17
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Table 2. Processor supply capacitors when external PMIC or regulators utilized (on-chip DC-DC regulators not
used)...continued
1 1 1 1 1 1
Power rail 0.1 μF 0.22 μF 1 μF 2.2 μF 4.7 μF 22 μF Notes
USB2_VBUS 1 Place under ball D16
1. 0.1 μF, 0.22 μF, 1 μF, 2.2 μF, and 4.7 μF are size 0402 and 22 μF is size 0805. Type X6S is used for
automotive cluster and extended temperature range.
2. Avoid using the internal DCDC/LDO output for the ADC reference. Use an external voltage reference, which
is more accurate.
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• For power supply sequencing requirements, refer to section 4.2.1 of i.MX RT1170 Crossover Processors Data
Sheet for Industrial Products (document IMXRT1170IEC).
The power control logic of the IMXRT1170 EVK board is shown in Figure 1.
• It powers up SNVS first, then PMIC_REQ_ON is asserted to enable external DC-DC to power up other power
domains.
• ON/OFF button is used to switch PMIC_REQ_ON to control power modes.
• RESET button and WDOG output are used to reset the system power.
ONOFF
SNVS_IN
LDO
NVCC_XX
VDD_LPSR_IN
IN VDDA_ADC_3V3
5 V input
OUT DCDC_IN
Reset button DC/DC MIMXRT1170
EN DCDC_DIG system
Reset IC
VDD_SOC_IN
1 ms R/C DCDC_PSWITCH
delay
PMIC_REQ_ON
WDOG
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VDD_3V3 VDD_1V8_OUT
DCDC_IN DCDC_ANA
30 kΩ DCDC_PSWITCH DCDC_ANA_SENSE
4.7 μF
10 μF
0.22 μF
0.1 μF
GND GND
GND GND
DCDC_LP
VDD_SOC_IN
2
DC/DC 22 μF
4.7 μH
1 DCDC_LN GND
DCDC_DIG 0.7 ~ 1.15 V
DCDC_DIG_SENSE 22 μF 22 μF
0.1 μF
GND
GND
Note: The on-chip DC-DC regulator of the processor is suitable for consumer and industrial applications up to
105 degrees C. For automotive applications, contact your NXP representative.
4 Clocks
See Table 4 for the clock configuration. The 32.768 kHz and 24 MHz oscillators are used for the EVK design.
For RT1170, it is necessary to use 32.768 kHz and 24 MHz crystals for the hardware design.
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1. For on-chip termination values, refer to table 115 of i.MX RT1170 Crossover Processors Data Sheet for
Industrial Products (document IMXRT1170IEC).
The Serial Downloader mode of ROM provides a means to download a program image to the chip over USB or
UART serial connection. In this mode, typically a host PC can communicate to the ROM bootloader using serial
download protocol. NXP ROM flashloader also uses these same serial connections. All boards should make at
least one of the serial downloader ports (USB1 or UART1) available to use NXP image and fuse programming
enablement.
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20
19
18
16
15
14
17
13
12
11
8
7
6
5
SW2 SW1
416131160810 416131160804
1
2
3
4
5
6
7
8
9
10
1
2
3
4
Bus isolation resistors
R56 47 kΩ BT_CFG[0] R356 22 kΩ
GPIO_DISP_B1_06 {7, 19}
R54 47 kΩ BT_CFG[1] R355 22 kΩ
GPIO_DISP_B1_07 {7, 19}
R46 47 kΩ BT_CFG[2] R353 22 kΩ
GPIO_DISP_B1_08 {7, 19}
R36 47 kΩ BT_CFG[3] R352 22 kΩ
GPIO_DISP_B1_09 {7, 19}
R31 47 kΩ BT_CFG[4] R346 22 kΩ
GPIO_DISP_B1_10 {7, 19}
R29 47 kΩ BT_CFG[5] R344 22 kΩ
GPIO_DISP_B1_11 {7, 19}
R28 47 kΩ BT_CFG[6] R340 22 kΩ
GPIO_DISP_B2_00 {7}
R24 47 kΩ BT_CFG[7] R336 22 kΩ
GPIO_DISP_B2_01 {7, 16}
R23 47 kΩ BT_CFG[8] R334 22 kΩ
GPIO_DISP_B2_02 {7, 18}
R21 47 kΩ BT_CFG[9] R331 22 kΩ
GPIO_DISP_B2_03 {7, 18}
R32 47 kΩ BT_CFG[10] R350 22 kΩ
GPIO_DISP_B2_04 {7, 18}
R33 47 kΩ BT_CFG[11] R349 22 kΩ
GPIO_DISP_B2_05 {7, 18}
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MIMXRT1170HDUG All information provided in this document is subject to legal disclaimers. © 2023 NXP B.V. All rights reserved.
MIMXRT1170HDUG All information provided in this document is subject to legal disclaimers. © 2023 NXP B.V. All rights reserved.
MIMXRT1170HDUG All information provided in this document is subject to legal disclaimers. © 2023 NXP B.V. All rights reserved.
MIMXRT1170HDUG All information provided in this document is subject to legal disclaimers. © 2023 NXP B.V. All rights reserved.
7 Layout recommendations
7.1 Stackup
A high-speed design requires a good stackup to have the right impedance for the critical traces.
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The constraints for the trace width depend on many factors. These factors are board stackup and the
associated dielectric and copper thickness, required impedance, and required current (for power traces). The
stackup also determines the constraints for routing and spacing. Consider the following when designing the
stackup and selecting the material for your board:
• The board stackup is critical for the high-speed signal quality.
• Preplan the impedance of the critical traces.
• The high-speed signals must have reference planes on adjacent layers to minimize crosstalk.
• The NXP reference design equals Isola FR4.
• The NXP validation boards equal Isola FR4.
• The recommended stackup is six layers, with the layer stack shown in Figure 4.The left-hand image shows
the detail provided by NXP inside the fabrication detail as a part of the Gerber files. The right-hand side
shows the solution suggested by the PCB fabrication company for the requirements. Figure 5 shows the
IMXRT1170EVK PCB stackup implementation.
Placing the decoupling capacitors close to the power balls is critical to minimize inductance and ensure the
high-speed transient current demand of the processor. The correct via size, trace width, and trace space are
critical to preserve the adequate routing space. The recommended geometry is as follows:
• For the BGA constraint area:
– The via type is 18/8 mils, the trace width is 4 mils, and the trace space is 3.79 mils.
• For the default area (except for the BGA):
– The via type is 18/8 mils, the trace width is 7 mils, and the trace space is 7 mils.
– The preferred BGA power-decoupling design layout is available at www.nxp.com.
– Use the NXP design strategy for power and decoupling.
7.3 FlexSPI
FlexSPI is a flexible SPI host controller which supports two SPI channels and up to 4 external devices. Each
channel supports Single/Dual/Quad/Octal mode data transfer (1/2/4/8 bidirectional data lines). FlexSPI is the
most commonly used external memory.
For more information, refer to section FlexSPI parameters from the data sheet (see Section 9). There are
several sources for the internal sample clock for FlexSPI read data:
• Dummy read strobe generated by FlexSPI controller and looped back internally
– (FlexSPIn_MCR0[RXCLKSRC] = 0x0)
• Dummy read strobe generated by FlexSPI controller and looped back through
– DQS pad (FlexSPIn_MCR0[RXCLKSRC] = 0x1)
• Read strobe provided by memory device and input from
– DQS pad (FlexSPIn_MCR0[RXCLKSRC] = 0x3)
For QSPI Flash without a DQS provided by the memory, only the option of FlexSPIn_MCR0[RXCLKSRC] = 0x1
can achieve 133 MHz SDR R/W speed, and FlexSPI_DQS pin should be left floating.
The Octal Flash, where a DQS signal is provided by the memory, must use the option of
FlexSPIn_MCR0[RXCLKSRC] = 0x3 which can achieve 166 MHz DDR R/W. In such case, FlexSPI_DQS pin
should be connected to the flash directly.
7.4 SDRAM
The SDRAM interface (running at up to 200 MHz) is one of the critical interfaces for the chip routing. The
controlled impedance for the single-ended traces must be 50 Ω. Ideally, route all signals at the same length as
the EVK board. To route all signals at the same length (±50 mils), see the IMXRT1170-EVK layout.
The SDRAM routing must be separated into two groups: data and address/control. To separate all SDRAM
signals into two groups, see the EVK layout:
• SEMC_DQS signal line should be left floating.
• All data lines and DM[x]
• All address lines and control lines
RT1170EVK is a 6-layer board design, both routing groups refer to the GND plane for the impedance control.
One group is routed at the top layer (the reference plane is the second layer), while the other group is routed at
the bottom layer (the reference plane is the fifth layer).
7.5 USB
Use these recommendations for the USB:
• Route the DP and DM differential pair first.
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• Route the DP and DM signals on the top (or bottom) layer of the board.
• The trace width and spacing of the DP and DM signals must meet the differential impedance requirement of
90 Ω.
• Route the traces over the continuous planes (power and ground):
– They must not pass over any power/GND plane slots or anti-etch.
– When placing the connectors, make sure that the ground plane clearouts around each pin have ground
continuity between all pins.
• Maintain the parallelism (skew-matched) between DP and DM, and match the overall differential length
difference to fewer than 5 mils.
• Maintain the symmetric routing for each differential pair.
• Do not route the DP and DM traces under the oscillators or parallel to the clock traces (and/or data buses).
• Minimize the lengths of the high-speed signals that run parallel to the DP and DM pair.
• Keep the DP and DM traces as short as possible.
• Route the DP and DM signals with a minimum number of corners. Use 45-degree turns instead of 90-degree
turns.
• Avoid layer changes (vias) on the DP and DM signals. Do not create stubs or branches.
• Provide the ground return vias within a 50 mil distance from the signal layer-transition vias when transitioning
between different reference ground planes.
• When the USB signals are not used, it is recommended to follow Section 8.
7.6 Ethernet
RT1170 has two Ethernet controllers, one is 10M/100M Ethernet controller with support for IEEE1588 and the
other one is Gigabit Ethernet controller with support for AVB/TSN. For the RGMII port, the layout is critical and
below are the guidelines.
• To ensure correct RGMII function, the length of PCB trace should be less than 15 cm with a 5 pF loading to
comply with maximum 1 ns delay regulation, and the total trace loading (5 pF input loading included) should
be within 15 pF.
• Clock and other high-speed traces must be as short as possible. It is necessary to have a GND plane under
these traces.
• RXC and TXC are high-speed (125 MHz) signals; Keep a 20 mil space between clock and data signals.
• Match each RGMII TX and RX (RXC/RXD/RXCTL/RXDV) group trace length to within +/-50mil.
• Route the RGMII traces at 50 ohm impedance, and make sure to route those traces over an unbroken GND
reference ground plane.
• For the RXC signal from the PHY, place R/C close to the PHY (fewer than 500 mils) and adjust the R/C value
to tune the timing.
• The clocks or strobes that are on the same layer need at least 2.5× spacing from the adjacent traces (2.5×
height from the reference plane) to reduce crosstalk.
• All synchronous modules must have the bus length matching and relative clock length control.
• For the SD module interfaces:
– Match the data, clock, and CMD trace lengths (length delta depends on the bus rates).
– Follow similar SDRAM rules for data, address, and control as for the SD module interfaces.
• For the RT1170 FlexSPI module to support QSPI flash, FlexSPI_DQS pin should be kept floating to achieve
high-speed access.
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Note: For unused digital IO, suggest tying low or configure it to pull down.
9 Related resources
• i.MX RT1170 Crossover Processors Data Sheet for Consumer Products (document IMXRT1170CEC)
• i.MX RT1170 Crossover Processors Data Sheet for Industrial Products (document IMXRT1170IEC)
• i.MX RT1170 Crossover Processors Data Sheet for Automotive Products (document IMXRT1170AEC)
• i.MX RT1170 Processor Reference Manual (document IMXRT1170RM)
10 Revision history
Table 13 summarizes the revisions to this document.
Revision history
Revision number Date Substantive changes
5 03 July 2023 • Updated capacitance value of VDDA_1P8_IN in Table 1 and Table 2
4 16 May 2023 • Updated Figure 2
• Updated few reference links
• Made few editorial changes
3 13 February • Added notes to Section 3.
2023 • Added a recommended setting for a 24 MHz crystal.
2 09/2021 • Updated the document title from "Hardware Development Guide for the
MIMXRT1170 Processors" to "Hardware Development Guide for the
MIMXRT1160/1170 Processors"
• Added a note to provide support on RT1160 in Section 1
• In Section 3,
– Removed the table "Power domains"
– Updated the power rail values and notes in Table 1
– Added Table 2
– Renamed the table from "Power sequence and recommendations" to "Power
supply and SNVS domain signals" and updated the description of SNVS domain
signals in Table 3
– Removed the figure "Power up and power down sequences"
– Updated power sequence requirements
• Updated the on-chip termination values and added a footnote in Table 5
• Updated the description of JTAG_TDO in Table 6
• Removed an item "For the RT1170 SEMC module to support SDRAM, SEMC_DQS
pin (GPIO_EMC_B1_39) should be kept floating to achieve high-speed access"
from Section 7.7
• In Section 8,
– Renamed the column "Pad Name" to "Ball Name"
– Updated the recommendation values of MIPI and USB modules
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Revision history...continued
Revision number Date Substantive changes
– Added a note
• Added Section 9
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provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
11.3 Trademarks
NXP Semiconductors does not accept any liability related to any default, Notice: All referenced brands, product names, service names, and
damage, costs or problem which is based on any weakness or default trademarks are the property of their respective owners.
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all NXP — wordmark and logo are trademarks of NXP B.V.
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
MIMXRT1170HDUG All information provided in this document is subject to legal disclaimers. © 2023 NXP B.V. All rights reserved.
AMBA, Arm, Arm7, Arm7TDMI, Arm9, Arm11, Artisan, big.LITTLE, i.MX — is a trademark of NXP B.V.
Cordio, CoreLink, CoreSight, Cortex, DesignStart, DynamIQ, Jazelle,
Keil, Mali, Mbed, Mbed Enabled, NEON, POP, RealView, SecurCore,
Socrates, Thumb, TrustZone, ULINK, ULINK2, ULINK-ME, ULINK-
PLUS, ULINKpro, μVision, Versatile — are trademarks and/or registered
trademarks of Arm Limited (or its subsidiaries or affiliates) in the US and/or
elsewhere. The related technology may be protected by any or all of patents,
copyrights, designs and trade secrets. All rights reserved.
MIMXRT1170HDUG All information provided in this document is subject to legal disclaimers. © 2023 NXP B.V. All rights reserved.
Contents
1 Introduction ......................................................... 2
2 Background ......................................................... 2
3 Power supply .......................................................2
3.1 On-chip DC-DC module .....................................6
4 Clocks ...................................................................7
5 Debugging and programming ............................8
6 Boot, reset, and miscellaneous ....................... 10
7 Layout recommendations .................................17
7.1 Stackup ............................................................ 17
7.2 Placement of bulk and decoupling
capacitors .........................................................18
7.3 FlexSPI ............................................................ 19
7.4 SDRAM ............................................................ 19
7.5 USB ..................................................................19
7.6 Ethernet ........................................................... 20
7.7 High-speed signal routing
recommendations ............................................ 20
8 Unused pins recommendation .........................21
9 Related resources ............................................. 22
10 Revision history ................................................ 22
11 Legal information .............................................. 24
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section 'Legal information'.