5/ I27124 rev.

D 02/03

20MT120UF
"FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT

Features
• UltraFast Non Punch Through (NPT)
Technology
• Positive VCE(ON)Temperature Coefficient VCES = 1200V
• 10µs Short Circuit Capability
• HEXFRED TM Antiparallel Diodes with IC = 40A
UltraSoft Reverse Recovery
• Low Diode VF T C = 25°C
• Square RBSOA
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved (File E78996)

Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
Operation
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
Operation
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
MMTP
Resistance

Absolute Maximum Ratings

Parameters Max Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
I C Continuos Collector Current @ TC = 25°C 40 A
@ TC = 106°C 20
I CM Pulsed Collector Current 100
I LM Clamped Inductive Load Current 100
I F Diode Continuous Forward Current @ TC = 106°C 25
I FM Diode Maximum Forward Current 100
VGE Gate-to-Emitter Voltage ± 20 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
PD Maximum Power Dissipation (only IGBT) @ TC = 25°C 240 W
@ TC = 100°C 96

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20MT120UF
I27124 rev. D 02/03

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameters Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 V VGE = 0V, I C = 250µA
∆V(BR)CES/ Temperature Coeff. of +1.3 V/°C VGE = 0V, I C = 3mA (25-125°C)
∆T J Breakdown Voltage
VCE(ON) Collector-to-Emitter Saturation Voltage 3.29 3.59 V VGE = 15V, I C = 20A
4.42 4.66 VGE = 15V, I C = 40A
3.87 4.11 VGE = 15V, I C = 20A T J = 125°C
5.32 5.70 VGE = 15V, I C = 40A T J = 125°C
3.99 4.27 VGE = 15V, I C = 20A T J = 150°C
VGE(th) Gate Threshold Voltage 4 6 V VCE = VGE, I C = 250µA
∆VGE(th) / Temperature Coeff. of -14 mV/°C VCE = VGE, I C = 3mA (25-125°C)
∆T J Threshold Voltage
g fe Transconductance 17.5 S VCE = 50V, IC = 20A, PW = 80µs
I CES Zero Gate Voltage Collector Current (1) 250 µA VGE = 0V, V CE = 1200V, TJ = 25°C
0.7 3.0 mA VGE = 0V, V CE = 1200V, TJ = 125°C
2.9 9.0 VGE = 0V, V CE = 1200V, TJ = 150°C
I GES Gate-to-Emitter Leakage Current ±250 nA VGE = ± 20V
(1) I CES includes also opposite leg overall leakage

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameters Min Typ Max Units Test Conditions
Qg Total Gate Charge (turn-on) 176 264 nC IC = 20A
Qge Gate-Emitter Charge (turn-on) 19 30 VCC = 600V
Qgc Gate-Collector Charge (turn-on) 89 134 VGE = 15V
Eon Turn-On Switching Loss 513 770 µJ VCC = 600V, IC = 20A
Eoff Turn-Off Switching Loss 402 603 VGE = 15V, Rg = 5Ω, L = 200µH
Etot Total Switching Loss 915 1373 TJ = 25°C, Energy losses include tail
and diode reverse recovery
Eon Turn-On Switching Loss 930 1395 µJ VCC = 600V, IC = 20A
Eoff Turn-Off Switching Loss 610 915 VGE = 15V, Rg = 5Ω, L = 200µH
Etot Total Switching Loss 1540 2310 TJ = 125°C, Energy losses include tail
and diode reverse recovery
Cies Input Capacitance 2530 3790 pF VGE = 0V
Coes Output Capacitance 344 516 VCC = 30V
Cres Reverse Transfer Capacitance 78 117 f = 1.0 MHz
RBSOA Reverse Bias Safe Operating Area full square TJ = 150°C, IC = 120A
VCC = 1000V, Vp = 1200V
Rg = 5Ω, VGE = +15V to 0V
SCSOA Short Circuit Safe Operating Area 10 µs TJ = 150°C
VCC = 900V, Vp = 1200V
Rg = 5Ω, VGE = +15V to 0V

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 20MT120UF
I27124 rev. D 02/03

Diode Characteristics @ TJ = 25°C (unless otherwise specified)

Parameters Min Typ Max Units Test Conditions

V FM Diode Forward Voltage Drop 2.48 2.94 V I C = 20A

3.28 3.90 I C = 40A
2.44 2.84 I C = 20A, T J = 125°C
3.45 4.14 I C = 40A, T J = 125°C
2.21 2.93 I C = 20A, T J = 150°C
Erec Reverse Recovery Energy of the Diode 420 630 µJ VGE = 15V, Rg = 5Ω, L = 200µH
trr Diode Reverse Recovery Time 98 150 ns VCC = 600V, IC = 20A
Irr Peak Reverse Recovery Current 33 50 A T J = 125°C

Thermal- Mechanical Specifications

Parameters Min Typ Max Units
TJ Operating Junction Temperature Range - 40 150 °C
TSTG Storage Temperature Range - 40 125
RthJC Junction-to-Case IGBT 0.35 0.52 °C/ W
Diode 0.40 0.61
RthCS Case-to-Sink Module 0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance ( external shortest distance in air 5.5 mm
between two terminals)
Creepage (shortest distance along external 8
surface of the insulating material between 2 terminals)

T Mounting Torque (2) 3 ± 10% Nm

Wt Weight 66 g (oz)

(2) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads

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 20MT120UF
I27124 rev. D 02/03

50 250

40 200

30 150

Ptot (W)
IC (A)

20 100

10 50

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
T C (°C)
TC (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature

1000 1000

100

100
10 µs
10
IC (A)
IC (A)

100 µs

1 1ms
10

DC
0.1

0.01 1
1 10 100 1000 10000 10 100 1000 10000

VCE (V) VCE (V)

Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA

TC = 25°C; TJ ≤ 150°C TJ = 150°C; VGE =15V

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 20MT120UF
I27124 rev. D 02/03

100 100
VGE = 18V VGE = 18V
VGE = 15V VGE = 15V
80 VGE = 12V 80 VGE = 12V
VGE = 10V VGE = 10V
VGE = 8.0V VGE = 8.0V
60 60
ICE (A)

ICE (A)
40 40

20 20

0 0
0 2 4 6 8 10 0 2 4 6 8 10
VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs TJ = 25°C; tp = 80µs

100 120
VGE = 18V
VGE = 15V -40°C
VGE = 12V 100 25°C
80
VGE = 10V 125°C
VGE = 8.0V 80
60
I CE (A)

IF (A)

60
40
40

20
20

0 0
0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0 5.0
VCE (V) VF (V)

Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 125°C; tp = 80µs tp = 80µs

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 20MT120UF
I27124 rev. D 02/03

20 20

18 ICE = 40A 18 ICE = 10A

ICE = 20A 16 ICE = 20A
16
ICE = 10A ICE = 40A
14 14

12 12

VCE (V)
VCE (V)

10 10

8 8

6 6

4 4

2 2

0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C

20 300
18 ICE = 10A
T J = 25°C
16 ICE = 20A 250
T J = 150°C
ICE = 40A
14
200
12
VCE (V)

ICE (A)

10 150
8
6 100

4
50
2
0 0
5 10 15 20 0 5 10 15 20
VGE (V)
VGE (V)

Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics

TJ = 125°C VCE = 50V; tp = 10µs

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 20MT120UF
I27124 rev. D 02/03

2400 1000

2000

EON

Swiching Time (ns)

1600
tdOFF
Energy (µJ)

tF
1200 100

EOFF
800
tdON

400 tR

0 10
0 10 20 30 40 50 0 10 20 30 40 50

IC (A) IC (A)

Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V TJ = 150°C; L=1.4mH; VCE= 400V
RG= 5Ω; VGE= 15V RG= 100Ω; VGE= 15V

2000 1000

1600
EON
tdOFF
Swiching Time (ns)

1200
Energy (µJ)

tF
100
EOFF
800
tdON

400
tR

0 10
0 10 20 30 40 50 60 0 10 20 30 40 50 60
RG ( ) RG ( )

Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V ICE= 5.0A; VGE= 15V

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 20MT120UF
I27124 rev. D 02/03

40 40

RG = 5.0Ω

30 30
RG = 10 Ω
IRR (A)

IRR (A)
20
R G = 30 Ω
20

R G = 50 Ω

10 10

0 0
0 5 10 15 20 25 30 35 0 10 20 30 40 50 60
IF (A) RG ( Ω)

Fig. 17 - Typical Diode IRR vs. IF Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C TJ = 150°C; IF = 5.0A

40 3.0

35 2.5 5.0Ω
10 Ω 30A
30 2.0
Q RR (µC)

20A
IRR (A)

30Ω
25 1.5
50Ω
10A
20 1.0

15 0.5

10 0.0
0 200 400 600 800 1000 0 200 400 600 800 1000 1200
diF /dt (A/µs) diF /dt (A/µs)

Fig. 19- Typical Diode I RR vs. diF/dt Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; VCC= 400V; VGE= 15V;TJ = 150°C
ICE= 5.0A; TJ = 150°C

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 20MT120UF
I27124 rev. D 02/03

10000

Cies

1000
Capacitance (pF)

Coes

100
Cres

10
0 20 40 60 80 100
VCE (V)

Fig. 21- Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz

16

14
600V
12

10
VGE (V)

0
0 40 80 120 160 200
Q G , Total Gate Charge (nC)

Fig. 22 - Typical Gate Charge vs. VGE

ICE = 5.0A; L = 600µH

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20MT120UF
I27124 rev. D 02/03

D = 0.50
Thermal Response ( Z thJC )

0.20
0.1
0.10
0.05
R1 R2 R3
0.02 R1 R2 R3 Ri (°C/W) τi (sec)
0.01 τJ
0.01 τJ
τC
τ 0.161 0.000759
τ1 τ2 τ3
τ1 τ2 τ3 0.210 0.017991
Ci= τi/Ri 0.147 0.06094
Ci= i/Ri

0.001
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10

t1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

D = 0.50
Thermal Response ( Z thJC )

0.20
0.1
0.10
0.05
R1 R2 R3
0.02 R1 R2 R3 Ri (°C/W) τi (sec)
0.01 τJ τC 0.238 0.001017
0.01 τJ
τ1
τ
τ2 τ3
τ1 τ2 τ3 0.312 0.033081
Ci= τi/Ri 0.061 0.77744
Ci= i/Ri

0.001
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10

t1 , Rectangular Pulse Duration (sec)

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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 20MT120UF
I27124 rev. D 02/03

L
VCC 80 V DUT
DUT 1000V
0
Rg
1K

Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit

diode clamp /
DUT
L
Driver

D
900V - 5V
C

DUT /
DUT DRIVER VCC
Rg

Fig. CT.3 - S.C. SOA Circuit Fig. CT.4 - Switching Loss Circuit

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20MT120UF
I27124 rev. D 02/03

Outline Table

Electrical Diagram

Resistance in ohms

Dimensions in millimetres

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 20MT120UF
I27124 rev. D 02/03

Ordering Information Table

Device Code
20 MT 120 U F

1 2 3 4 5

1 - Current rating (20 = 20A)

2 - Essential Part Number
3 - Voltage code (120 = 1200V)
4 - Speed/ Type (U = Ultra Fast IGBT)
5 - Circuit Configuration (F = Full Bridge)
6 - Special Option

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/03

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