GITAM SCHOOL OF TECHNOLOGY: HYDERABAD

Department of Electrical, Electronics & Communication Engineering

Academic Plan

For

B.Tech (ECE )

III Semester

19EEC233P - Electronic Devices and Amplifier Circuits

Laboratory
2021- 2022
 19EEC233P: Electronic Devices and Amplifier Circuits Laboratory

List of Experiments:
1. Current-Voltage Characteristics of BJT / Measurement of scale current & common emitter
current gain.
2. Measurement of small signal parameters (gm, ro, rπ, re) of BJT at a given operating point Ic.
3. Design, Simulate and Implement BJT amplifier and Inverter logic gate, Current-Voltage
Characteristics of MOSFET / Measurement of threshold voltage.
4. Design, Simulate and Implement Current-Voltage Characteristics of MOSFET /
Measurement of threshold voltage.
5. Measurement of small signal parameters (gm, ro, gmb) of MOSFET at a given operating
point (Id,Vds).
6. Design and simulation of basic NMOS current mirror, cascode NMOS current mirror and
current steering circuit.
7. Design, Simulation and Implementation of Common Source Amplifier for Gain, Power
dissipation requirements.
8. Design, Simulation and Implementation of Common Drain Amplifier (Voltage Buffer) for
Gain, Output Impedance, Level Shift requirements.
9. Analysis and Verification of Basic NMOS Differential Pair for Gain, Input Common Mode
Range, Maximum Input differential voltage requirements.
10. Design, Simulation and Implementation of Differential Amplifier with active current
mirror load for gain, power dissipation CMRR requirements.
 EXPERIMENT 1
Aim: To obtain the input and output characteristics of a transistor in Common Emitter
Configuration and calculate scale current & common emitter current gain.

EQUIPMENT REQUIRED:

S.No Description of Item Range Qty

1 Regulated power supply 0-30 V 1

2 Voltmeter 0-1V 1

0-30V 1

3 Ammeter 0-50mA 1

0-100A 1

4 Bread Board 1

COMPONENTS REQUIRED:

S.No Description of Item Range Qty

1 Transistor BC107 1

2 Resistor 1K 1

100K 1

CIRCUIT DIAGRAM:
0-50mA
-
1K
+
A
0-500A
100K C
+ -
A B
BC107
+ +
0-30V V 0-1 V V 0-30 V 0-30V

- -
E
PROCEDURE:

1. The circuit is connected as per the circuit diagram.

2. For input characteristics VCE is maintained constant at a convenient value
and then VBE is increased insteps.
3. Corresponding values of IB are noted at each step.
4. The above procedure is then repeated for different constant values of VCE.
5. For output characteristics IB is maintained constant at a convenient value
and then VCE is increased from zero insteps.
6. Corresponding values of IC are noted at each step.
7. The above procedure is then repeated for a different constant values of IB .

Tabular Forms

Input Characteristics

VCE=0V VCE=6V
S.NO
VBE(V) IB(μA) VBE(V) IB(μA)

Output Characteristics

MODEL WAVEFORM: Input Characteristics

IB = 20 µA IB = 40 µA IB = 60 µA
S.NO
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Output Characteristics

RESULT: The H-Parameters for a transistor in CE configuration are calculated from the input
and output characteristics.

1. Input Impedance hie =

2. Reverse Transfer Voltage ratio hre =
3. Forward Transfer Current ratio hfe =
4. Output conductance hoe =
 USING SIMULATION TOOL

Aim:

To observe the Current-Voltage Characteristics of BJT using Multisim software and

calculate scale current & common emitter current gain.

Apparatus Required:
1. PC
2. OrCAD 9.2

Circuit Diagram:

Procedure:
1. Start capture CIS in OrCAD. A blank circuit window will appear on the screen along
with a component tool bar.
2. Using component tool bar, place all the components on the circuit window and wire the
circuit.
3. Connect the circuit as shown in circuit diagram.
4. Go to simulation profile ->Analysis->DC sweep -> set the voltage sweeps (Primary and
secondar) and simulate for the output.
Model Graphs:

Input Characteristics output Characteristics

Calculations:

From output Characteristic curve, at any perticular value of VCE, measure the scale currents IC
and IB. From that, current gain is calculated as,
β=IC/IB.

Result:

Thus the input and output characteristics of BJT in CE configuration was verified and
the graph was plotted.
 EXPERIMENT 2
Aim: To Measure small signal parameters (gm, ro, rπ, re) of BJT at a given operating point Ic.

EQUIPMENT REQUIRED:

S.No Description of Item Range Qty

1 Regulated power supply 0-30 V 1

2 Voltmeter 0-1V 1

0-30V 1

3 Ammeter 0-50mA 1

0-100A 1

4 Bread Board 1

COMPONENTS REQUIRED:

S.No Description of Item Range Qty

1 Transistor BC107 1

2 Resistor 1K 1

100K 1

CIRCUIT DIAGRAM:
0-50mA
- 1K
+
A
0-500A
100K C
+ -
A B
BC107
+ +
0-30V V 0-1 V V 0-30 V 0-30V

- -
E
Procedure:
1. The circuit is connected as per the circuit diagram.
2. From the input and output characteristics find the following parameters
I. Determination of transconductance (gm)
∆(𝐼𝐶1 − 𝐼𝐶0 )
𝑔𝑚 =
∆(𝑉𝐵𝐸1 − 𝑉𝐵𝐸0)

II. Determination of Output Resistance (r0)

1
𝑟0 = ∆(𝐼𝐶1 −𝐼𝐶0 ) at a fixed 𝐼𝐵
⁄
∆(𝑉𝐶𝐸1 −𝑉𝐶𝐸0 )

III. Determination of rπ

∆(𝑉𝐵𝐸1 − 𝑉𝐵𝐸0 )
𝑟𝜋 =
∆(𝐼𝐵1 − 𝐼𝐵0 )

IV. Determination of re.

∆(𝑉𝐵𝐸1 − 𝑉𝐵𝐸0 )
𝑟𝑒 =
∆(𝐼𝐸1 − 𝐼𝐸0 )
 USING SIMULATION TOOL

Aim:

To Measure small signal parameters (gm, ro, rπ, re) of BJT at a given operating point Ic.

Apparatus Required:
1. PC
2. OrCAD 9.2

Circuit Diagram:

Procedure:
I. Determination of transconductance (gm)
1. Connect the circuit in OrCAD editor as per the given circuit diagram.
2. At a fixed value of VBE named as VBE0, note down the value of IC named as IC0.
Vary VBB to change VBE slightly named as VBE1. Note down the corresponding IC
named as IC1. Then
Calculate Transconductance (gm) as rate of change of Collector current ∆(𝐼𝐶 )
with the rate of change in base to emitter voltage ∆VBE.
∆(𝐼𝐶1 − 𝐼𝐶0 )
𝑔𝑚 =
∆(𝑉𝐵𝐸1 − 𝑉𝐵𝐸0)
3. Compare the above practical value of g m with theoretical value calculated as
𝐼𝐶
𝑔𝑚 =
𝑉𝑇

II. Determination of Output Resistance (r0)

1. Connect the circuit in OrCAD editor as per the given circuit diagram.
 2. Vary VBB to make IB to a fixed value and vary VCC to fix IC to a constant value IC0.
Note down the VCE at that particular IC as VCE0
3. Vary VCC slightly and to make IC0 to IC1 and note down corresponding VCE named
as VCE1.
Calculate output resistance as reciprocal of rate of change of collector current
(∆(𝐼𝐶 )to rate of change of Collector to Emitter voltage (∆(𝑉𝐶𝐸 )
1
𝑟0 = ∆(𝐼𝐶1 −𝐼𝐶0 ) at a fixed 𝐼𝐵
⁄
∆(𝑉𝐶𝐸1 −𝑉𝐶𝐸0 )
4. Compare the above value with theoretical value calculated as
𝑟0 = 𝑉𝐴 /𝐼𝐶
Where VA is BJT parameter and take the value as indicated in datasheet

III. Determination of rπ

1. Connect the circuit in OrCAD editor as per the given circuit diagram.
2. Vary VBB to make IB to a fixed value named as IB0 and note down the VBE named as
VBE0.
3. Vary VBB to change IB slightly named as IB1 and Note down the Corresponding VBE
named as VBE1.
4. Calculate rπ as the ratio of rate of change of base emitter voltage ∆ VBE to rate of
change of base current ∆ IB.
∆(𝑉𝐵𝐸1 − 𝑉𝐵𝐸0 )
𝑟𝜋 =
∆(𝐼𝐵1 − 𝐼𝐵0 )
5. Compare the above value with
𝛽
𝑟𝜋 =
𝑔𝑚

IV. Determination of re.

1. Connect the circuit in OrCAD editor as per the given circuit diagram.
2. Vary VBB to make IB to a fixed value and note down the emitter current named as
IE0 and note down the VBE named as VBE0.
3. Vary VBB to change IE slightly named as IE1 and Note down the Corresponding VBE
named as VBE1.
4. Calculate re as the ratio of rate of change of base emitter voltage ∆ VBE to rate of
change of base current ∆ IE.
∆(𝑉𝐵𝐸1 − 𝑉𝐵𝐸0 )
𝑟𝑒 =
∆(𝐼𝐸1 − 𝐼𝐸0 )
5. Compare the above value with
1
𝑟𝑒 =
𝑔𝑚
Result:

Hence, the small signal parameters of BJT was calculated practically and verified with
theoretical value.

S.No Partameter Theoritical Practical

1 𝑔𝑚
2 𝑟0
3 𝑟𝜋
4 𝑟𝑒
 EXPERIMENT 3

Aim: To draw the frequency response curve of the CE amplifier

APPARATUS:

S.No Description of Item Range Qty

1 Cathode ray oscilloscope 20MHz 1

2 Frequency generator 1MHz 1

3 Regulated power supply 0-30V 1

COMPONENTS:

S.No Description of Item Range Qty

1
1 Transistor BC107
1
2 Resistor 68K
1
18K
1
1K
1
470

2
3 Capacitor 10f
1
100f
 CIRCUIT DIAGRAM:

Vcc
12V

1K
68K

10uF
_
+
10uF
_
+

BC107
+
Vo
1K
Vi CRO
FG 20mV 18K
_
100uF
_
470 ohms

PROCEDURE:

1. Connect the circuit as shown in circuit diagram

2. Apply the input of 20mV peak-to-peak and 1 KHz frequency using Function Generator
3. Measure the Output Voltage Vo (p-p) for various load resistors
4. Tabulate the readings in the tabular form.
5. The voltage gain can be calculated by using the expression A v= (V0/Vi)
6. For plotting the frequency response the input voltage is kept Constant at 20mV peak-to-
peak and the frequency is varied from 100Hz to 1MHz Using function generator
7. Note down the value of output voltage for each frequency.
8. All the readings are tabulated and voltage gain in dB is calculated by Using The
expression Av=20 log10 (V0/Vi)
9. A graph is drawn by taking frequency on x-axis and gain in dB on y-axis On Semi-log
graph.
The band width of the amplifier is calculated from the graph

Using the expression, Bandwidth, BW=f 2-f1

Where f 1 lower cut-off frequency of CE amplifier, and

 Where f 2 upper cut-off frequency of CE amplifier

The bandwidth product of the amplifier is calculated using the expression

Gain Bandwidth product=3-dBmidband gain X Bandwidth

OBSERVATIONS:

FREQUENCY RESPONSE: Vi=20mv

FREQUENCY(Hz) OUTPUT GAIN IN dB

VOLTAGE (V0) Av=20 log10 (V0/Vi)

MODELWAVE FORMS:

INPUT WAVE FORM:

OUTPUT WAVE FORM

FREQUENCY RESPONSE
RESULT: The voltage gain and frequency response of the single stage RC coupled CE
amplifier are obtained. Also gain bandwidth product of the amplifier is calculated.
 USING SIMULATION TOOL

Aim: To Design, Simulate and Implement BJT amplifier and to observe BJT as a inverter

Apparatus Required:
1. PC
2. OrCAD
Circuit Diagram:

Design:
Procedure:

1. Connect the circuit as per the circuit diagram in OrCAD editor.

2. Connect the oscilloscope and observe the input and output waveforms.
3. Vary the frequency and note down the output voltage.
4. Draw the frequency response curve between frequency and gain (20*log (V0/Vi)).

Readings

Input Voltage (Vi): 50mV

S.No Frequency Output Gain

(Hz) Voltage (V0) =20*log(V0/Vi))
in Volts
Model Wave forms:

Input Wave:

Output Wave:

Frequency Response:

Transistor as switch:
Procedure:

1. Connect the circuit as shown in the figure in OrCAD editor.

2. Vary VBB from minimum to maximum note down the reading of VCE Voltmeters.
3. Draw the transfer characteristic curve between VBB Vs VCE for observing the
transistor as invertor.
4. In Multisim, go to DC Sweep and vary VBB from 0 to 10V, make output as Voltage
across Collector to Emitter and simulate.

Tabular Forms:

S.No VBB (V) VCE(V)

Model Graph:
 EXPERIMENT 4

AIM: To plot the Drain characteristics and Transfer characteristics of a MOSFET

EQUIPMENT REQUIRED:

S.No Description of Item Range Qty

1 Regulated power supply 0-30 V 1

2 Voltmeter 0-20V 2

3 Ammeter 0-50mA 1

COMPONENTS REQUIRED:

S.No Description of Item Range Qty

1 Resistor 1K 1

2 MOSFET 1

CIRCUIT DIAGRAM:

PROCEDURE:
1. Connect the circuit as shown in fig.
2. By keeping VGS constant note down different values of ID for different values of
VDS
3. Repeat the above step for different values of V GS.
4. Plot the graph by taking VDS on X-axis and ID on Y-axis for different values of
VGS.
OBSERVATIONS:

Transfer Characteristics:

S.No VDS=2V VDS=4V

VGS (V) ID (A) VGS (V) ID (A)

Drain Characteristics:

S.No VGS=2V VGS=4V VGS=6V

VDS (V) ID (A) VDS (V) ID (A) VDS (V) ID (A)

MODEL GRAPH:

PRECAUTIONS:

1. Check and avoid the circuit loose connections.

2. Readings should be taken without parallax error.

RESULT:

Drain characteristics and Transfer characteristics of MOSFET are obtained

 USING SIMULATION TOOL

Aim:

To observe the current voltage characteristics of MOSFET and to calculate the threshold
Voltage.

Apparatus:

1. PC
2. OrCAD Software

Circuit Diagram:

Procedure:

1. Connections are made as per circuit diagram in Orcad editor.

Transfer Characteristics:

1. Fix the VDS to some voltage and vary VGS to note down the ID values.
2. Plot between VGS Vs ID is known as transfer characteristics or input characteristics of
MOSFET.
3. Repeat the step 1 for other values of VDS.
Drain Characteristics:

1. Fix the VGS to some value and note down the values between VDS and ID.
2. Repeat the step 1 for different values of VGS.
3. Plot between VDS Vs ID is known as Drain Characteristics or Output Characteristics of
MOSFET.

Tabular Form:

Transfer Characteristics:

S.No VDS=2V VDS=4V

VGS (V) ID (A) VGS (V) ID (A)

Drain Characteristics:

S.No VGS=2V VGS=4V VGS=6V

VDS (V) ID (A) VDS (V) ID (A) VDS (V) ID (A)

Model Graphs:

Result:

Hence the V-I Characteristics of N-Channel Enhancement mode MOSFET has been observed
and from which threshold voltage was calculated as,

VT=______
 EXPERIMENT 5

Aim: To measure small signal parameters (gm, ro, gmb) of MOSFET at a given operating point
(Id,Vds).

Apparatus:

1. PC
2. OrCAD

Circuit Diagram:

Procedure:

To find transconductance (gm):

1. Connect the circuit as per the circuit diagram on OrCAD editor.

2. At a fixed value of VDD, the operating point (VDS, ID) are fixed.
3. Initially for a fixed value of VGG, note down the readings of VGS and ID and name
them as VGS0, ID0.
4. Vary VGG slightly and note down the readings of VGS and ID and name them as VGS1,
ID1.
5. Calculate transconductance (gm) experimentally form the equation,
(𝐼𝐷1 − 𝐼𝐷0 )
𝑔𝑚 =
(𝑉𝐺𝑆1 − 𝑉𝐺𝑆0 )
6. Calculate transconductance (gm) Theoritically form the equation,
2 ∗ 𝐼𝐷 2 ∗ 𝐼𝐷
𝑔𝑚 = 𝑜𝑟
𝑉𝑜𝑉 (𝑉𝐺𝑆 − 𝑉𝑡 )

To find Finite output resistance (r0):

1. Connect the circuit as per the circuit diagram on OrCAD editor.

 2. At a fixed value of VDD, the operating point (VDS, ID) are fixed.
3. Initially for a fixed value of VDD, note down the readings of VDS and ID and name
them as VDS0, ID0.
4. Vary VDD slightly and note down the readings of VDS and ID and name them as VDS1,
ID1.
5. Calculate Finite output Resistance (r0) Experimentally form the equation,
(𝑉𝐷𝑆1 − 𝑉𝐷𝑆0 )
𝑟0 =
(𝐼𝐷1 − 𝐼𝐷0 )
6. Calculate the Finite output Resistance (r0) Theoritically form the equation,
𝑉𝐴 1
𝑟0 = =
𝐼𝐷 𝜆 ∗ 𝐼𝐷

To find transconductance (gmb):

1. Connect the circuit as per the circuit diagram on OrCAD editor.

2. At a fixed value of VDD, the operating point (VDS, ID) are fixed.
3. Initially for a fixed value of VGG, note down the readings of VGB and ID and name
them as VGB, ID0.
4. Vary VGG slightly and note down the readings of VGB and ID and name them as VGB1,
ID1.
5. Calculate transconductance (gmb) experimentally form the equation,
(𝐼𝐷1 − 𝐼𝐷0 )
𝑔𝑚𝑏 =
(𝑉𝐺𝐵1 − 𝑉𝐺𝐵0 )
6. Calculate transconductance (gm) Theoritically form the equation,
𝑔𝑚𝑏 = 𝜒 ∗ 𝑔𝑚
In general, 𝜒 varies between 0.1 to 0.2.

Result:

S.No Partameter Theoritical Practical

1 𝑔𝑚
2 𝑟0
3 𝑔𝑚𝑏
 EXPERIMENT 6

Aim:

To design and simulation of basic NMOS current mirror, cascode NMOS current mirror
and current steering circuit.

Apparatus:

1. PC
2. OrCAD software

Circuit Diagram:

N-MOS Current Mirror:

N-MOS Cascode current mirror:

MOS Current Steering Circuit:

Design of Resistance for current mirror circuit:

Let VDD=5V, Iref=2mA, and from datasheet of 2N7000, Vt=2V, Kn’=20.78µA/V2,

W=9.7mm, L=2µm.

1 𝑊
𝐼𝑅𝑒𝑓 = 𝐾𝑛 ′ (𝑉𝑂𝑉 2 )
2 𝐿
𝑉𝐺𝑆 = 𝑉𝑂𝑉 + 𝑉𝑡

(𝑉𝐷𝐷 − 𝑉𝐺𝑆 )
𝑅=
𝐼𝑅𝑒𝑓

Procedure:

1. Connect the circuit as per the circuit diagram on to the OrCAD editor.
2. Calculate the value of resistance as per the design equations.

Procedure for Current mirror circuit and Cascode current mirror circuit:

1. Initially for λ=0, measure the output current at the drain terminal of transistor Q2 and
compare it with Iref by inserting measurement probe at the drain terminals of input and
output transistors.
2. For λ=0.1, draw the DC sweep curve between output voltage and output current.
3. For λ=0.1, from the DC sweep curve between output voltage and output current,
calculate the output resistance as,
∆(𝑉0 )
𝑅0 =
∆(𝐼0 )

Observations:
 λ= 0 λ =0.1
IRef Io IRef Io Ro
Curren Mirror
Cascode current Mirror
Model graph:

Current Mirror with λ =0.1 Cascode Current Mirror with λ =0.1

Procedure for current steering circuit:

1. Arrange the circuit as per the circuit diagram on to the OrCAD editor.
2. Insert measurement probe at the drain terminals of all the transistors.
3. Note down the drain currents of all the transistors.

Observations:

S.No Drain Current Parameter Current Value

I1=IRef
I2
I3
I4
I5
Result:

Hence, a constant current source (current mirror) circuit, Cascode current mirror
circuit and current steering circuit had designed simulated and analysed.

Through the analysis, we conclude that, on comparison with normal current mirror, a
cascade current mirror provides high output resistance.
 EXPERIMENT 7

Aim: To design and Simulate Common Source Amplifier for Gain, Output Impedance, Level
Shift requirements.

Apparatus:

1. PC
2. OrCAD software

Circuit Diagram:

Design:
To calculate CC1, CC2 and CS let FL=100Hz

CS=gm/(2*Pi*fL)

CC1=gm/((2*Pi*fP1)*(RG+Rsig))

CC2=gm/((2*Pi*fP3)*(RD+RL))

fP1=fP3=10Hz.

Procedure:

1. Connect the circuit as per the circuit diagram in OrCAD editor.

2. Connect the oscilloscope and observe the input and output waveforms.
3. Vary the frequency and note down the output voltage.
4. Draw the frequency response curve between frequency and gain (20*log (V0/Vi)).
Readings

Input Voltage (Vi): 50mV

S.No Frequency Output Gain

(Hz) Voltage (V0) =20*log(V0/Vi))
in Volts

Model Wave forms:

Input Wave:

Output Wave:

Ferquency Response:
Theoritical Calculations:

Rin=(RG1 II RG2)

𝑅𝑖𝑛
𝐺𝑉 = (𝑔 (𝑅 𝑙𝑙 𝑅𝐿 ))
𝑅𝑖𝑛 + 𝑅𝑆𝑖𝑔 𝑚 𝐷

Power Dissipation (PD)= VDS*ID

Where VDS=VDD-ID*RD

Result:

Hence, we designed and simulated the common source amplifier and caliculated and
compatred theoritical and practical gain.Also calculated the power dissipation.

Power Dissipation( PD) =

S.No Gain (Theritical) Gain (practical)

 EXPERIMENT 8

Aim: To design and Simulate Common Drain Amplifier for Gain, Power dissipation
measurements.

Apparatus:

1. PC
2. OrCAD software

Circuit Diagram:
Design:

Procedure:

1. Connect the circuit as per the circuit diagram in OrCAD editor.

2. Connect the oscilloscope and observe the input and output waveforms.
3. Calculate the voltage gain theoretically and compare it with practical Voltage gain.
4. Calculate the output Resistance and compare it with practical Output Resistance.
Model Wave forms:

Input Wave:

Output Wave:

Result:

Hence, Source follower circuit was analyzed and calculaed the amplifier parameters.

Voltage Gain (Av)= = (Theoritical)

Voltage Gain (Av) = (Practical)

Output Resistance (Rout)= = ( Theoritical)

Output Resistance (Rout)= (Practical)

 EXPERIMENT 9

Aim:

To Analyse and Verification of Basic NMOS Differential Pair for Gain, Input Common
Mode Range, Maximum Input differential voltage requirements.

Apparatus:

1. PC
2. OrCAD software

Circuit Diagram:

Differential Amplifier with Common Input:

Differential Amplifier with difference input:

Procedure:

1. Connect the fig (a) circuit on multisim front panel.

2. Observe the output of fig (a) on CRO and note down the output voltage (v 0)and input voltage
(vi).
3. Calculate common mode gain (Acm) as

Acm=vo/vi

4. Connect the fig (b) circuit on multisim front panel.

5. Observe the output of fig (b) on CRO and note down the output voltage (v 0)and input
voltage (vi).
6. Calculate differential gain (Ad) as

Ad=vo/vi

7. Calculate CMRR as

CMRR= Ad/Acm

8. Repeat the same experiment for different values of drain resistance.

Observations:

S.No RD Ad Acm CMRR

1 1KΩ
2 10KΩ
3 100KΩ
Result:

Hence, Analysed and Verified Basic NMOS Differential Pair for measurement of differential
gain, common mode gain and CMRR for different values of drain resistance.
 EXPERIMENT 10

Aim:

To Design, Simulation and Implementation of Differential Amplifier with active current

mirror load for gain, power dissipation CMRR requirements.

Apparatus:

1. PC
2. OrCAD software

Circuit Diagram:

To find the differential Gain (Ad):

V3
1.8v
M3

M2N6806 M4
M2N6806

C2

10u
R1V
1k
M2 0
M2N6759
M1

M2N6759 V2
V1 VOFF = 0
VOFF = 0 VAMPL = 10mv
VAMPL = 10mv FREQ = 1k
FREQ = 1k

I1
1Adc

Procedure:

1. Connect the circuit on OrCAD editor

2. Perform transient analysis to find the differential gain.
To find the common mode Gain (Acm):

V3
1.8v
M3

M2N6806 M4
M2N6806

C2

10u
R1V
1k
M2 0
M2N6759
M1

M2N6759
V1
VOFF = 0
VAMPL = 10mv
FREQ = 1k

I1
1Adc

Procedure:

1. Connect the circuit on OrCAD editor

2. Perform transient analysis to find the common mode gain.
3. Find the CMRR

CMRR= Ad/Acm

Result: The differential gain, common mode gain and CMRR are determined.