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A High-Speed Fully Differential Telescopic Op-Amp for Active Filter Designs

in V2X Applications

Article in Journal of Circuits Systems and Computers · November 2021

DOI: 10.1142/S0218126622500955

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Journal of Circuits, Systems, and Computers
Vol. 31, No. 5 (2022) 2250095 (18 pages)
.c World Scienti¯c Publishing Company
#
DOI: 10.1142/S0218126622500955

A High-Speed Fully Di®erential Telescopic Op-Amp

for Active Filter Designs in V2X Applications¤

Furkan Barin†
€ ITAK-Informatics
T UB _ and
Information Security Research Center,
41470, Gebze, Kocaeli, Turkey
[email protected]

Ertan Zencir
Department of Electrical & Electronics Engineering,
University of Turkish Aeronautical Association,
06790, Etimesgut, Ankara, Turkey
[email protected]

Received 31 October 2020

Accepted 27 September 2021
Published 24 November 2021

In this paper, an ultra-wideband fully di®erential two-stage telescopic 65-nm CMOS op-amp is
presented, which uses low-voltage design techniques such as level shifter circuits and low-
voltage cascode current mirrors. The designed op-amp consists of two stages. While the tele-
scopic ¯rst stage provides high speed and low swing, the second stage provides high gain and
large swing. Common-mode feedback circuits (CMFB), which contain ¯ve transistors OTA and
sensing resistors, are used to set the ¯rst-stage output to a known value. The designed two-stage
telescopic operational ampli¯er has 41.04 dB lower frequency gain, 1.81 GHz gain-bandwidth
product (GBW) and 51.9
phase margin under 5 pF load capacitance. The design consumes a
total current of 11.9 mA from a 1.2-V supply voltage. Presented fully di®erential two-stage
telescopic op-amp by using low-voltage design techniques is suitable for active ¯lter in vehicle-
to-everything (V2X) applications with 120
m55
m layout area.

Keywords: Common-mode feedback; fully di®erential op-amp; telescopic ¯rst stage; ultra-
wideband; V2X.

1. Introduction
WITH the advancements in the CMOS deep sub-
m technology, transistor sizes
continuously scaled down, which led designers to construct faster analog–digital
mixed circuits. This rapid development opened a new era that devices communicate
*This paper was recommended by Regional Editor Piero Malcovati.
† Corresponding author.

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F. Barin & E. Zencir

with each other and share information. Vehicle-to-everything (V2X) systems aim to
achieve an intelligent transportation system by using this excessive information
transmit rate in the near future.
V2X applications use a 5.9 GHz frequency band to communicate. This standard
contains 10 and 20 MHz channel sizes with several wideband options such as 60, 80
and 100 MHz.1 In the active ¯lter designing, fully di®erential op-amps are usually
used in negative feedback, so high speed and high gain become essential parameters
in these circuits to satisfy the V2X applications' requirements. There are several
active ¯lter topologies such as Rauch ¯lter (Multiple-Feedback Filter), Tow–Thomas
¯lter, Akerbeng–Mossberg ¯lter and Sallen–Key ¯lter. The Sallen–Key topology
requires a Di®erential Di®erence Ampli¯er (DFF) for implementation in fully dif-
ferential form, so this topology cannot be used for this paper. So, we implemented a
bandwidth programmable fourth-order Multiple-Feedback ¯lter, as can be seen in
Fig. 1. Equal-R method is used to create the ¯lter transfer functions. Also, band-
width programmability is achieved by using programmable capacitor arrays, as can
be seen in Fig. 1.
Nowadays, CMOS devices work with very low supply voltages. However, unlike
digital circuits, analog circuits cannot take advantage of it because transistors'
threshold values inevitably become high in short channel designs. This poses a sig-
ni¯cant challenge to design cascode devices to work correctly. In this paper, to reduce
this e®ect in the input stage, low threshold PMOS transistors are used.
CMFB circuits are the most critical parts of the fully di®erential op-amp de-
signing. If CMFB circuits are not properly designed, the circuit can oscillate or
shutdown itself because of the insu±cient common-mode voltage at output nodes.
Furthermore, common-mode sensing is done with complex circuits such as source
follower stages or MOSFETs working in the triode region in the long channel process.

Fig. 1. Fourth-order programmable MFB ¯lter.

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 A High-Speed Fully Di®erential Telescopic Op-Amp

However, in the short channel process, resistive structures can be used due to small
rO values. In this work, a resistive feedback method and ¯ve-transistor OTA-based
CMFB circuit adjust the output nodes to a known common-mode value.
Unlike the other works that have been done over the years, in this work, PMOS
transistors are used as the input stage, and a higher transition frequency value is
achieved.2,3 PMOS transistors are used in the input stage because the noise immu-
nity of the PMOS transistor is better than the NMOS transistor.4
This paper is organized as follows. Section 2 presents the fully di®erential tele-
scopic two-stage op-amp design. The simulation results of the op-amp are given in
Sec. 3. Finally, the paper is ¯nished with a conclusion in Sec. 4.

2. Fully Di®erential Telescopic Op-Amp Design

In this paper, a fully di®erential operational ampli¯er is used instead of its signed-
ended counterpart. Fully di®erential op-amps have di®erential inputs the same as
the single-ended counterparts, but the main di®erence is the fully di®erential op-
amps produce di®erential outputs.
These topologies have many advantages over single-ended op-amps. Since fully
di®erential op-amps have very high CMRR values and have a large swing, they can
be considered a perfect choice for ¯lter circuit applications. Moreover, the total
harmonic distortion (THD) value is signi¯cantly reduced, due to even-order non-
linearities that are not present in these topologies. Disadvantages of fully di®erential
op-amps can be considered as their need for matched feedback networks and
common-mode feedback circuits.5
As shown in Fig. 2, the designed fully di®erential op-amp consists of two main
ampli¯er stages. The compensation is done by connecting the second-stage output to
the ¯rst-stage output with a capacitor and zero-nulling resistor.6

2.1. First-stage design

The designed op-amp circuit has a telescopic cascode structure in the input stage, as
shown in Fig. 3. The main advantage of telescopic cascode structure against other

Fig. 2. Block diagram of the overall operational ampli¯er.

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F. Barin & E. Zencir

Fig. 3. Schematic of telescopic ¯rst stage.

op-amp structures is that it has the highest speed performance. Also, the telescopic
op-amp structure has low power dissipation and low noise.3 Low-voltage design
causes headroom limitations and makes the op-amp designs challenging. In order to
overcome these limitations, low threshold M1 , M2 PMOS transistors are used in the
input stage.
Furthermore, the fully di®erential op-amp cut-o® frequency strongly depends on
the circuit's dominant pole due to the miller e®ect. In this work, an 850 fF capacitor
is used as a pole-splitting capacitor. The dominant pole's approximate location can
be shown as the function of the ¯rst-stage output resistance, compensation capaci-
tance, and the second-stage gain, as depicted in (1)
1
P1 ¼ ; ð1Þ
ð1 þ gm2  R2 Þ  Cc  R1

where gm2 is the second-stage transconductance.

To achieve maximum cut-o® frequency and overcome headroom limitations, M5 ,
M6 , M7 and M8 transistors are designed as low-voltage high-swing cascode current

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 A High-Speed Fully Di®erential Telescopic Op-Amp

Fig. 4. The bias circuit.

mirror with minimum length values. In this work, the op-amp's cut-o® frequency is
calculated as 14.39 MHz under 5 pF load.
The bias circuit of the system is shown in Fig. 4. As we can see, M22 and M27
transistors are used to generate drain voltages of M23 , M25 , M28 and M31 transistors
by using M24 , M26 , M29 , M30 transistors. IREF refers to the current that is generated
from the bandgap circuitry.
The change in common-mode input level a®ects the M1 , M2 transistor's VDS, and
M3 , M4 transistor's VGS values. Hence, gain also drops with the common-mode
input voltage. To have the gain constant, M11 and M12 transistors are used as a level
shifter circuit.4 For minimal power dissipation, the level shifter circuit is designed to
draw minimum current from the bias circuit.

2.2. CMFB circuit for the ¯rst stage

Fully di®erential ampli¯ers need a common-mode feedback network to ensure that
the common-mode voltage level between two output nodes is at the wanted \VREF "
reference voltage value. There are several methods to sense the common-mode levels
in general. These methods can be realized as resistive sensing, sensing with the
source-follower stage and sensing with MOSFETs that are operating in the deep
triode region.4 In this paper, the resistive sensing method is adapted. The common-
mode sensing stage's resistor values are chosen relatively high not to a®ect the
telescopic ¯rst-stage gain. CS1 and CS2 capacitors are used to cancel the parasitic
e®ects of the sensing resistors in high-frequency operations.
The sensed common-mode voltage level through R1 , R2 resistors is compared
with a reference voltage. Five-transistor OTA with a gain of 7 is designed for this
operation. The ampli¯ed error value is used to control the telescopic ¯rst-stage tail

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F. Barin & E. Zencir

Fig. 5. The ¯rst-stage common-mode feedback circuit.

current. OTA's output controls 30% of the main tail current through the M9 tran-
sistor to avoid stability issues in the common-mode feedback loop. Figure 5 depicts
the designed ¯ve transistor OTA and common-mode sensing resistors.

2.3. Second-stage design

Although the telescopic ¯rst stage has advantages like its high-speed operation and
high gain, the output swing of telescopic cascode con¯guration is small. Thus, using
only the telescopic cascode stage is not suitable for low-voltage op-amp design. The
second stage is designed as a common source ampli¯er with an active load to over-
come small swing problems encountered in the ¯rst stage. As illustrated in Fig. 6, the
second stage consists of CC1 , CC2 , RZ1 and RZ2 as a compensation network and R3 ,
R4 as a common-mode feedback structure alongside the common-source stage. CS3
and CS4 capacitors are used to cancel the parasitic e®ects of R3 , R4 resistances in
high-frequency operations.
The second stage exhibits a nondominant pole and right half-plane zero due to
pole-splitting capacitor CC and the ¯rst- and second-stage output capacitances C1
and C2 . The second-stage transconductance has an important role in determining the
locations of the nondominant pole and the right half-plane zero.5 These locations are
approximately de¯ned as
gm2  Cc
P2 ¼ ; ð2Þ
C1  Cc þ C2  C1 þ Cc  C2
g
Z ¼ þ m2 : ð3Þ
Cc

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 A High-Speed Fully Di®erential Telescopic Op-Amp

Fig. 6. Schematic of the second stage.

If the ¯rst-stage parasitic capacitance is small compared to the compensation ca-

pacitor and the load capacitance CL is approximately ¯ve times bigger than the
compensation capacitor, the nondominant pole becomes highly dependent on the
load capacitance.4 This can be expressed as
gm2
P2 ¼ : ð4Þ
CL

Right half-plane zero appears on the circuits because the pole-splitting capacitor
shorts the ¯rst- and second-stage outputs at high frequencies. The right half-plane
zero has the same magnitude response as the left half-plane zero. However, the phase
response of the right half-plane zero behaves the same as the left half-plane pole.
Thus, the stability of the system is decreased.7
The simplest method to reduce the right half-plane zero e®ect is connecting a
zero-nulling resistor series with the compensation capacitor.6 With this approach,
the zero location of the system becomes as
1
Z¼
: ð5Þ
Cc  1
gm2  Rz

If the zero-nulling resistor is made equal to 1/gm2 , the right half-plane zero dis-
appears from the system. However, the zero-nulling resistor can be used to cancel the
e®ect of the nondominant pole.6 As shown in Fig. 7, increasing the RZ value carries
the zero from the right half-plane to the left half-plane. A 180  zero nulling resistor
is used to reduce the nondominant pole's e®ect in this work.

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F. Barin & E. Zencir

Fig. 7. Movement of the RHP zero with zero-nulling resistor.

The second-stage common-mode feedback loop only consists of resistors, unlike

the ¯rst stage. This is due to the fact that the second stage only contains minimum
length transistors. So, the resistive sensing method does not disturb the second-stage
gain. R3 and R4 resistors with 30 k value are used as the second-stage common-mode
feedback loop. The sensed common-mode voltage of the outputs is directly applied to
the gates of the M18 and M19 transistors. The main advantage of this common-mode
feedback loop is that this structure does not su®er from any stability problem.4

3. Post-Layout Simulation Results

The op-amp is designed in TSMC 65 nm process using core and low threshold
devices. As shown in Fig. 8, the layout was drawn with the Cadence Virtuoso
computer-aided design (CAD) tool and includes common-mode feedback circuits,
compensation capacitors, ¯rst and second stages. The common-centroid method is
used for every stage in design to reduce the gradient-induced mismatches. The active
layout area has been measured as 120
m55
m. Table 1 summarizes the compo-
nent sizes of the op-amp.
As shown in Figs. 9 and 10, the op-amp's open-loop magnitude and phase
responses for TT, FF and SS corners are plotted. The circuit has a low-frequency gain
of 41.04 dB, transition frequency of 1.81 GHz and a phase margin of about 51.9
for
5 pF capacitive loads per output stage in TT corner. Also, gain and phase variations
for di®erent temperatures and supply voltages in the TT corner are shown in Figs. 11
and 12, respectively. The op-amp's gain, phase margin, GBW and power con-
sumption for these variations are summarized in Table 2.
The DC characteristic of the operational ampli¯er is shown in Fig. 13. A good
linearity is achieved within an input voltage range of 5 mV. The DC di®erential
gain of 41.04 dB is observed from the post-layout simulation.
The post-layout input-referred spectral noise density simulation is shown in
Fig. 14. Flicker noise (1/f) frequency corner is approximately estimated as 300 Hz.
pffiffiffiffiffiffi
The input-referred spectral noise density at 100 MHz calculated as 1.961 nV/ Hz
In Fig. 15, the results of the PSRR and CMRR simulations are shown. The PSRR
and CMRR are extremely important analog design parameters because they describe
how well an ampli¯er rejects noises in common-mode input or power supply and

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 A High-Speed Fully Di®erential Telescopic Op-Amp

Fig. 8. Layout of the operational ampli¯er.

ground. Ideally, a fully di®erential ampli¯er has in¯nite CMRR and PSRR, but due
to mismatches that is caused by parasitic extraction, the designed op-amp exhibits
72.26 dB CMRR, 87.91 dB PSRR+ and 60.41 dB PSRR. PSRR+ and PSRR
denote the noises that are originated from power supply and ground, respectively.

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F. Barin & E. Zencir

Table 1. Device sizes.

Device (s) Sizes (W/L) Device(s) Sizes (W/L)

M1 =M2 (122.88
m/60 nm) M17 (5.76
m/180 nm)
M3 =M4 (122.88
m/60 nm) M18 (1.44
m/720 nm)
M5 =M6 =M7 =M8 (28.8
m/60 nm) M19 =M21 /M24 (1.44
m/60 nm)
M9 (31.68
m/60 nm) M20 /M22 /M25 (1.44
m/60 nm)
M10 (86.4
m/60 nm) M23 (2.88
m/720 nm)
M11 (1.64
m/180 nm) M26 /M27 (2.88
m/60 nm)
M12 (1.44
m/60 nm) M28 /M29 (240
m/60 nm)
M13 =M14 (3.84
m/60 nm) M30 =M31 (240
m/60 nm)
M15 =M16 (15.36
m/180 nm)

Fig. 9. Magnitude responses of the operational ampli¯er for TT, FF, and SS corners.

Fig. 10. Phase responses of the operational ampli¯er for TT, FF and SS corners.

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 A High-Speed Fully Di®erential Telescopic Op-Amp

Fig. 11. E®ect of temperature and supply voltage variations on the operational ampli¯er's gain.

Fig. 12. E®ect of temperature and supply voltage variations on the operational ampli¯er's phase.

Table 2. The op-amp's speci¯cations for various supply voltage and temperature variations.

Supply voltage/temperature Gain GBW Phase margin Power consumption

1.08 V/27
C 41.19 dB 1.5 GHz 49.91
9.34 mW
1.2 V/10
C 42 dB 1.863 GHz 48.51
11.97 mW
1.2 V/27
C 41.04 dB 1.81 GHz 51.9
14.3 mW
1.2 V/80
C 38.42 dB 1.715 GHz 54.32
16.95 mW
1.2 V/110
C 36.23 dB 1.625 GHz 56.84
18.44 mW
1.32 V/27
C 41.24 dB 1.98 GHz 50.15
17.64 mW

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F. Barin & E. Zencir

Fig. 13. DC transfer characteristic of the operational ampli¯er.

Fig. 14. Simulated input-referred noise density.

Figure 16 depicts the THD of the designed operational ampli¯er from 100 kHz to the
500 MHz frequency. To achieve a trustworthy result, the ¯rst ¯ve harmonics are included
in the THD calculation. 2 k feedback resistors and 5 pF and 10 k loads are used in
post-layout THD simulation. 55 dB THD value is achieved at 100 MHz frequency.

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 A High-Speed Fully Di®erential Telescopic Op-Amp

Fig. 15. PSRR and CMRR of the operational ampli¯er.

Fig. 16. Total harmonic distortion versus frequency.

The post-layout transient simulation of the op-amp is shown in Fig. 17. 100 mV
peak-to-peak (Vpp ) sinusoidal signal with 100 MHz frequency is applied to the op-amp
di®erential inputs for 10 periods. 2 k feedback resistor is used as a unity gain
feedback network. THD value is calculated as 55 dB for 10 periods as previously
simulated in the THD simulation.

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F. Barin & E. Zencir

Fig. 17. Closed-loop transient simulation with unity feedback.

In Table 3, recent works and their performance characteristics can be seen. The
Figure of Merit (FoM) method is used to compare the designed op-amps with their
certain characteristics. There are several ways to calculate the FoM, but in this work,
it is calculated as presented in Ref. 8.

GBW½MHz  CL ½pF
FoM ¼ : ð6Þ
W ½mW

In Eq. (6), the power consumption can be changed as total current consumption.
This FoM calculation method is usable for the compared op-amp designs apart from
the process.
In this work, the FoM value is calculated as 632.86 MHzpF/mW, and the best
FoM value is achieved among the other papers that have been published.
In layout design, it is observed that big IR drops from the power supply disturb
the circuit working. To reduce the resistance values from power supply and ground
through to the op-amp circuit, metal lines with a width of 5
m from metal1 to
metal6 have been used.
Figures 18 and 19 show the post-layout Monte Carlo simulations of the gain and
phase margin of the op-amp. Totally, we ran 200 Monte Carlo simulations. We
achieved 40.49 dB mean and 1.67 dB standard deviation in gain and 50.31
mean and
2.54
standard deviation in phase margin.

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 Table 3. Comparison to op-amps in the literature.

Phase Power Supply

½MHz½pF
Ref. Technology Gain GBW margin consumption voltage Load FOM ½mW Year
2 0.12
m 40.2 dB 1.5 GHz 45
11 mW 1.2 V 3.2 pF 436.36 2004
3 65 nm 58 dB 1 GHz 62
11.4 mW 1.2 V 2  (5 pF 438.59 2009
and 10 k)
9 0.18
m 86 dB 392 MHz 73
12 mW 1.8 V 2  (2 pF 65.33 2004
and 1 k)
10 65 nm 56 dB 450 MHz 77
1.6 mW 1V 2 pF 562.5 2011
11 0.18
m 50 dB 2.6 GHz 35
7.2 mW 1.8 V 2 (300 fF 108.33 2002

2250095-15
and 1 k)
12 0.18
m 80 dB 660 MHz 73
3.8 mW 1.8 V 1 pF 173.68 2006
13 90 nm 72.1 dB 202 MHz 63
5.2 mW 1.2 V 2 pF 77.6 2015
14 90 nm 72.8 dB 221 MHz 61
2.9 mW 1.2 V 2 pF 152.8 2014
15 65 nm 60 dB 45 MHz 45
158.4
W 1.2 V 1 pF 284.1 2019
This work 65 nm 41.04 dB 1.81 GHz 51.9
14.3 mW 1.2 V 2  (5 pF and 10 k) 632.86

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A High-Speed Fully Di®erential Telescopic Op-Amp
F. Barin & E. Zencir

Fig. 18. Op-amp gain histogram.

Fig. 19. Op-amp phase margin histogram.

4. Conclusion
In this paper, a fully di®erential telescopic operational ampli¯er is presented in 65 nm
technology with core and low threshold voltage devices. Despite the low-voltage
headroom caused by 1.2-V supply voltage, the telescopic cascode structure is prop-
erly designed with level shifter and low-voltage cascode current mirror circuits.
Magnitude and phase simulations are done under TT, FF and SS corners. The

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 A High-Speed Fully Di®erential Telescopic Op-Amp

designed op-amp has a GBW of 1.81 GHz, a low-frequency gain of 41.04 dB and a
phase margin of about 51.9
with 1.2-V supply voltage. Very high GBW value and
comparable power dissipation of the designed op-amp to other works make this
design a suitable choice for active ¯lter designs in V2X applications. The designed
op-amp can be used, where high-speed operations are the main design speci¯cations
besides the ¯lter applications.

Acknowledgments
This paper is a result of the BEYOND5 (www.beyond5.eu) project which has re-
ceived funding from the ECSEL Joint Undertaking (JU) under grant agreement No
876124. The JU receives support from the European Union's Horizon 2020 research
and innovation programme and France, Germany, Turkey, Sweden, Belgium,
Poland, Netherland, Israel, Switzerland, Romania. The document re°ects only the
authors’; view and the Commission is not responsible for any use that may be made
of the information it contains.

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