4 TRANSISTOR CHARACTERISTICS

What is Inside ???

Transistor fundamentals ,Field effect transistors (FET) and its biasing JFET –structure,
operation, and V-I characteristic, MOSFET – structure, operation, and V-I characteristic –
types of MOSFET –Introduction to IGBT, comparison of all transistors

After successful completion of the unit the learners will be able to

Explain about a transistor their structure , classification,

Transistor fundamentals
What is a Transistor?
A transistor is an electronic component that is used in circuits to either amplify or switch electrical
signals or power, allowing it to be used in a wide array of electronic devices. A transistor consists
of two PN diodes connected back to back. It has three terminals namely emitter, base and
collector. The basic idea behind a transistor is that it lets you control the flow of current through
one channel by varying the intensity of a much smaller current that’s flowing through a second
channel.. When used as an amplifier, it takes a small input current and produces a larger output
current. Think of it as a current booster—useful in applications like hearing aids. As a switch, a
tiny current through one part of the transistor can control a much larger current elsewhere, which
is how computer chips work.
 How does a transistor work?

For an example, we will show how an NPN transistor works. A simple way to view its function as a
switch is to think of water flowing through a tube controlled by a Valve. Water pressure represents
‘Voltage’ and water flowing through a tube represents ‘Current’ (Figure 3). The large tubes
represent the Collector/Emitter junction with a Valve in-between, expressed in the figure as a Gray
Oval, like a moveable flap, which is actuated by current from a small tube representing the Base.
The valve keeps the water pressure from flowing from Collector to the Emitter. When water flows
through the smaller tube (the Base), it opens the valve between the Collector/Emitter junction,
allowing water to flow through to the Emitter, and on to Ground (Ground represents the return for
all water or Voltage/Current).

Classifications

Field effect transistors (FET)

 JFET –structure, operation

JFET – V-I characteristic

MOSFET – structure, operation, and V-I characteristic

Types of MOSFET

IGBT

What is an IGBT?
IGBT is the short form of Insulated Gate Bipolar Transistor. It is is a special type of transistor and
three-terminal semiconductor switching device that can be used for fast switching with high efficiency
in many types of electronic devices. These devices are mostly used in amplifiers for
switching/processing complex wave patters with pulse width modulation (PWM). The typical symbol
of IGBT along with its image is shown below. It can be useful in circuits where there is a lot of
current that needs to be switched on and off. It’s a mix between a MOSFET and a BJT transistor.
As mentioned earlier an IGBT is a fusion between a BJT and MOSFET. The symbol of the IGBT also
represents the same, as you can see the input side represents a MOSFET with a Gate terminal and the
output side represents a BJT with Collector and Emitter. The Collector and the Emitter are the
conduction terminals and the gate is the control terminal with which the switching operation is
controlled.

Internal Structure of IGBT

IGBT can be constructed with the equivalent circuit that consists of two transistors and MOSFET, as
the IGBT posses the output of the below combination of the PNP transistor, NPN transistor,
and MOSFET. IGBT combines the low saturation voltage of a transistor with the high input impedance
and switching speed of a MOSFET. The outcome obtained from this combination delivers the output
switching and conduction characteristics of a bipolar transistor, but the voltage is controlled like a
MOSFET.
Since IGBT is the combination of MOSFET and BJT they are also called by different names.
The different names of IGBT are Insulated Gate Transistor( IGT), Metal Oxide Insulated Gate
Transistor (MOSIGT), Gain Modulated Field Effect Transistor (GEMFET), Conductively Modulated Field
Effect Transistor (COMFET).

Working of IGBT
IGBT has three terminals attached to three different metal layers, the metal layer of the gate terminal
is insulated from the semiconductors by a layer of silicon dioxide (SIO2). IGBT is constructed with 4
layers of semiconductor sandwiched together. The layer closer to the collector is the p+ substrate
layer above that is the n- layer, another p layer is kept closer to the emitter and inside the p layer, we
have the n+ layers. The junction between the p+ layer and n- layer is called the junction J2 and the
junction between the n- layer and the p layer is called the junction J1. The structure of IGBT is shown
in the figure below.

To understand the working of the IGBT, consider a voltage source VG connected positively to the
Gate terminal with respect to the Emitter. Consider other voltage source V CC connected across The
Emitter and the Collector, where Collector is kept positive with respect to the Emitter. Due to the
voltage source VCC the junction J1 will be forward-biased whereas the junction J2 will be reverse
biased. Since J2 is in reverse bias there will not be any current flow inside the IGBT(from collector to
emitter).
Initially, consider that there is no voltage applied to the Gate terminal, at this stage the IGBT will be
in a non-conductive state. Now if we increase the applied gate voltage, due to the capacitance
effect on the SiO2 layer the negative ions will get accumulated on the upper side of the layer and the
positive ions will get accumulated on the lower side of the SiO2 layer. This will cause the insertion of
negative charge carriers in the p region, higher the applied voltage VG greater the insertion of
negatively charged carriers. This will lead to a formation of the channel between the J2 junction which
allows the flow of current from collector to emitter. The flow of current is represented as the
current path in the picture, when the applied Gate voltage VG increases the amount of current flow
from the collector to the emitter also increases.

Practical Examples of Using an IGBT in a Circuit

Because it can handle such high currents, IGBTs are typically used in power electronics. You’ll find it in switch mode power
supplies, in circuits that drive heavy loads such as electric motors, in air conditioners, refrigerators, and more.

Comparison of all transistors