MDV1595S – Single N-Channel Trench MOSFET 30V

MDV1595S
Single N-channel Trench MOSFET 30V, 36.1A, 10.7mΩ

General Description Features

The MDV1595S uses advanced MagnaChip’s MOSFET  VDS = 30V
Technology, which provides high performance in on-state  ID = 36.1A @VGS = 10V
resistance, fast switching performance and excellent  RDS(ON)
quality. MDV1595S is suitable for DC/DC converter and < 10.7mΩ @VGS = 10V
general purpose applications. < 13.0mΩ @VGS = 4.5V
 100% UIL Tested
 100% Rg Tested
 SBD Built In

D D D D D D D D D

G
S S S G G S S S

PDFN33
S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±12 V
TC=25oC 36.1
TC=100oC 22.8 A
Continuous Drain Current (1) o
ID (3)
TA=25 C 13.4
TA=70oC 10.8(3)
Pulsed Drain Current IDM 80 A
o
TC=25 C 24.5
TC=100oC 9.8
Power Dissipation o
PD W
TA=25 C 3.4(3)
TA=70oC 2.2(3)
(2)
Single Pulse Avalanche Energy EAS 48 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient RθJA 36 o
C/W
Thermal Resistance, Junction-to-Case RθJC 5.1

Feb. 2012 Version 1.1 1 MagnaChip Semiconductor Ltd.

Downloaded from Arrow.com.

 MDV1595S – Single N-Channel Trench MOSFET 30V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDV1595SURH -55~150oC PDFN33 Tape & Reel Halogen Free

Electrical Characteristics (TJ = 25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.5 2.0
VDS = 30V, VGS = 0V - - 0.5
Drain Cut-Off Current IDSS o
mA
TJ=125 C - - 100
Gate Leakage Current IGSS VGS = ±12V, VDS = 0V - - ±100 nA
VGS = 10V, ID = 13A - 8.2 10.7
Drain-Source ON Resistance RDS(ON) TJ=125oC - 14.9 13.5 mΩ
VGS = 4.5V, ID = 11A - 10.0 13.0
Forward Transconductance gfs VDS = 5V, ID = 13A - 27.3 - S
Dynamic Characteristics
Total Gate Charge Qg(10V) 15.6 22.3 29.0
Total Gate Charge Qg(4.5V) VDS = 15.0V, ID = 13A, 6.9 9.9 12.9
nC
Gate-Source Charge Qgs VGS = 10V - 3.0 -
Gate-Drain Charge Qgd - 2.7 -
Input Capacitance Ciss - 1426 1853
VDS = 15.0V, VGS = 0V,
Reverse Transfer Capacitance Crss - 75.4 98 pF
f = 1.0MHz
Output Capacitance Coss - 198 257
Turn-On Delay Time td(on) - 7.8 -
Rise Time tr VGS = 10V, VDS = 15.0V, - 3.1 -
ns
Turn-Off Delay Time td(off) ID = 13A, RG = 3.0Ω - 33.5 -
Fall Time tf - 4.3 -
Gate Resistance Rg f=1 MHz 0.5 1.0 2.0 Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - 0.45 0.7 V
Body Diode Reverse Recovery Time trr - 24.2 36.3 ns
IF = 13A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 16.4 24.6 nC

Note :

1. Surface mounted FR4 board with 2oz. Copper. Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 16.8A, VDD = 27V, VGS = 10V.
3. T < 10sec

Feb. 2012 Version 1.1 2 MagnaChip Semiconductor Ltd.

Downloaded from Arrow.com.

 MDV1595S – Single N-Channel Trench MOSFET 30V
50 12

3.0V

Drain-Source On-Resistance [mΩ]

11
40
ID, Drain Current [A]

3.5V

4.0V 10
30 VGS = 4.5V
VGS = 10V

20
2.5V
8
VGS = 10V
10
7

0 6
0 1 2 3 4 5 5 10 15 20 25 30 35 40 45 50
VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8 30
※ Notes :
※ Notes :
ID = 13A
1. VGS = 10 V
1.6 25
2. ID = 13 A
Drain-Source On-Resistance

Drain-Source On-Resistance
RDS(ON), (Normalized)

1.4 20
RDS(ON) [mΩ ],

1.2 15

1.0 10

TJ = 25 ℃

0.8 5

0.6 0
-50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10
o
TJ, Junction Temperature [ C] VGS, Gate to Source Volatge [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

30 100
※ Notes :
※ Notes : VGS = 0V
27
VDS = 5V
IDR, Reverse Drain Current [A]

24 80
ID, Drain Current [A]

21

18 60

15 TJ=25℃

TJ=25 ℃

12 40

6 20

0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5
VGS, Gate-Source Voltage [V] VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Feb. 2012 Version 1.1 3 MagnaChip Semiconductor Ltd.

Downloaded from Arrow.com.

 MDV1595S – Single N-Channel Trench MOSFET 30V
10 2000
Ciss = Cgs + Cgd (Cds = shorted)
※ Note : ID = 13A
Coss = Cds + Cgd
VDS = 15V Crss = Cgd
8 1600 Ciss
VGS, Gate-Source Voltage [V]

Capacitance [F]
6 1200

4 800

※ Notes ;
1. VGS = 0 V
2 400 Coss
2. f = 1 MHz

Crss

0 0
0 5 10 15 20 25 0 10 20 30
QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

3
10 50

Operation in This Area

is Limited by R DS(on)
2
10 40
10 ms
ID, Drain Current [A]

ID, Drain Current [A]

100 ms
10
1
1s 30
10 s

100 s DC
0
10 20

-1
10 10
Single Pulse
TJ=Max Rated
TC=25℃

-2
10
-1 0 1 2 0
10 10 10 10 25 50 75 100 125 150
VDS, Drain-Source Voltage [V] TC, Case Temperature [ ℃ ]

Fig.10 Maximum Drain Current vs. Case

Fig.9 Maximum Safe Operating Area Temperature

1
10

D=0.5

0.2
, Thermal Response

0
10
0.1
0.05
0.02 ※ Notes :
-1 Duty Factor, D=t1/t2
10
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC

0.01
JC
Zθ

-2
single pulse
10

-3
10
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response Curve

Feb. 2012 Version 1.1 4 MagnaChip Semiconductor Ltd.

Downloaded from Arrow.com.

 MDV1595S – Single N-Channel Trench MOSFET 30V
Package Dimension

PDFN33 (3.3x3.3mm)
Dimensions are in millimeters, unless otherwise specified

(Unit:
mm)

Feb. 2012 Version 1.1 5 MagnaChip Semiconductor Ltd.

Downloaded from Arrow.com.

 MDV1595S – Single N-Channel Trench MOSFET 30V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Feb. 2012 Version 1.1 6 MagnaChip Semiconductor Ltd.

Downloaded from Arrow.com.