Module- 2

Part- B
Field Effect Transistor
Junction Field Effect Transistor, JFET
Characteristics, MOSFETs: Enhancement
MOSFETs, Depletion Enhancement
MOSFETs (Text 1: 9.1,9.2,9.5)

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 Basics of FET
A Field Effect Transistor is a voltage operated device that can be used in amplifiers and
switching circuits.

• The field-effect transistor (FET) is a type of transistor that uses an electric field to control
the flow of current in a semiconductor.

• FETs are devices with three terminals: source, gate, and drain.

• FETs control the flow of current by the application of a voltage to the gate, which in turn
alters the conductivity between the drain and source.

• FETs are also known as unipolar transistors since they involve single-carrier-type
operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge
carriers in their operation, but not both.

 Two major categories of FET

JFET and MOSFET
 They are subdivided into
p-channel and n-channel

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 FETs vs. BJTs
Similarities:
• Amplifiers
• Switching devices
• Impedance matching circuits

Differences:
• FETs are voltage controlled devices. BJTs are current controlled
devices.
• FETs have a higher input impedance. BJTs have higher gains.
• FETs are less sensitive to temperature variations and are more easily
integrated on ICs.
• FETs are generally more static sensitive than BJTs.

4
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
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 Classification of FET

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Electronic Devices and Circuit Theory, 10/e Dr.Komala.M
Copyright ©2009 by Pearson Education, Inc.
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 FET Types
•JFET: Junction FET
•Two types 1. N- channel JFET
2. P –channel JFET

6
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
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 JFET Construction
There are two types of JFETs

•n-channel
•p-channel

The n-channel is more widely used.

There are three terminals:

•Drain (D) and Source (S) are connected to the n-channel

•Gate (G) is connected to the p-type material

7
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
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 JFET Operation: The Basic Idea
JFET operation can be compared to a water spigot.

The source of water pressure is the

accumulation of electrons at the
negative pole of the drain-source
voltage.

The drain of water is the electron

deficiency (or holes) at the positive pole
of the applied voltage.

The control of flow of water is the gate

voltage that controls the width of the n-
channel and, therefore, the flow of
charges from source to drain.

8
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
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 JFET Operating Characteristics

There are three basic operating conditions for a JFET:

• VGS = 0, VDS increasing to some positive value

• VGS < 0, VDS at some positive value
• Voltage-controlled resistor

9
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
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 JFET Operating Characteristics: VGS = 0 V
Three things happen when VGS = 0 and VDS is increased from 0 to a more positive
voltage

• The depletion region between p-gate

and n-channel increases as electrons
from n-channel combine with holes
from p-gate.

• Increasing the depletion region,

decreases the size of the n-channel
which increases the resistance of the
n-channel.

• Even though the n-channel resistance

is increasing, the current (ID) from
source to drain through the n-
channel is increasing. This is because
VDS is increasing.

10
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
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 JFET Operating Characteristics: Pinch Off

If VGS = 0 and VDS is further increased to

a more positive voltage, then the
depletion zone gets so large that it
pinches off the n-channel.

This suggests that the current in the n-

channel (ID) would drop to 0A, but it
does just the opposite–as VDS increases,
so does ID.

11
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
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 JFET Operating Characteristics: Saturation

At the pinch-off point:

• Any further increase in VGS does not

produce any increase in ID. VGS at
pinch-off is denoted as Vp.

• ID is at saturation or maximum. It is
referred to as IDSS.

• The ohmic value of the channel is

maximum.

12
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
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 JFET Operating Characteristics

As VGS becomes more negative, the

depletion region increases.

13
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
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 JFET Operating Characteristics

As VGS becomes more negative:

• The JFET experiences pinch-off

at a lower voltage (VP).

• ID decreases (ID < IDSS) even

though VDS is increased.

• Eventually ID reaches 0 A. VGS at

this point is called Vp or VGS(off)..

Also note that at high levels of VDS the JFET reaches a breakdown situation. ID
increases uncontrollably if VDS > VDSmax.

14
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
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 JFET Operating Characteristics:
Voltage-Controlled Resistor

The region to the left of the

pinch-off point is called the
ohmic region.

The JFET can be used as a

variable resistor, where VGS
controls the drain-source
resistance (rd). As VGS becomes
more negative, the resistance
(rd) increases.
ro
rd 
2
 V 
 1  GS 
 VP 

15
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
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 p-Channel JFETS

The p-channel JFET behaves the

same as the n-channel JFET,
except the voltage polarities and
current directions are reversed.

16
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
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 p-Channel JFET Characteristics

As VGS increases more positively

• The depletion zone

increases
• ID decreases (ID < IDSS)
• Eventually ID = 0 A

Also note that at high levels of VDS the JFET reaches a breakdown situation: ID
increases uncontrollably if VDS > VDSmax.

17
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
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 N-Channel JFET Symbol

18
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Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
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 JFET Transfer Characteristics

The transfer characteristic of input-to-output is not as straightforward in

a JFET as it is in a BJT.

In a BJT,  indicates the relationship between IB (input) and IC (output).

In a JFET, the relationship of VGS (input) and ID (output) is a little more

complicated:

2
 V 
ID  I DSS  1  GS 
 V P 


19
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
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 JFET Transfer Curve

This graph shows the

value of ID for a
given value of VGS.

20
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
 MOSFETs
.

MOSFET is an acronym for Metal Oxide Semiconductor Field

Effect Transistor. It is a type of FET (Field Effect Transistor) that
has an insulated metal oxide layer between its gate and channel.
 There are two types of MOSFETs:

• Depletion-Type
• Enhancement-Type

Both of these MOSFET’s are widely used in electronics,

integrated and embedded circuits.
The MOSFET conducts current between the source and drain.
The path for current between the source and drain is called a
channel. The width of this channel is controlled by the voltage at
the gate terminal.

Dr. Komala.M , Dept of ECE

Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
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 D- MOSFET (Depletion MOSFET)
Depletion MOSFET or D-MOSFET is a type of MOSFET where
the channel is constructed during the process of
manufacturing.
Therefore, the D-MOSFET can conduct between its drain and
gate when the VGS = 0 volts.
Therefore, D-MOSFET is also known as normally ON
transistor.

Dr. Komala.M , Dept of ECE

Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
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 Types of Depletion MOSFETs

Dr. Komala.M , Dept of ECE

Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
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 Working of Depletion MOSFET( N-channel)
• In N-channel D-MOSFET, the source, drain and channel are made during
the manufacturing from N-type material upon a P-substrate. The channel
contains electrons as charge carriers. There is a metal oxide insulating layer
between the gate electrode and the channel or P-substrate.

When the gate is connected in reverse bias i.e. negative voltage is

applied, the holes from the P-substrate will attract towards the gate
depleting it of the electrons and reduce the channel size. At a
certain –Vth, the MOSFET will stop conduction. Therefore, N-
channel D-MOSFET has a negative threshold voltage

Dr. Komala.M , Dept of ECE

Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
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 Working of Depletion MOSFET( P-channel)
• In P-channel D-MOSFET, The source, drain, and channel is made up of P-
type material upon an N-type substrate. P-channel has holes as the charge
carrier.
• Therefore, to reduce the channel width or to attract electrons from the N-
substrate, P-channel MOSFET is applied with positive gate voltage VGS.

When positive gate voltage VGS isn applied to P channel D MOSFET

the positive voltage attracts the electrons from the substrate to deplete
the channel of holes, thus eliminating the channel as well as the
current flow. Therefore, the P-channel D-MOSFET has a positive
threshold voltage.
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
 Basic MOSFET Operation
A depletion-type MOSFET can operate in two
modes:

• Depletion mode
• Enhancement mode
• When VGS = 0 V, ID = IDSS
• When VGS < 0 V, ID < IDSS

Dr. Komala.M , Dept of ECE

Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
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 D-Type MOSFET in Depletion Mode

Depletion Mode

The characteristics are

similar to a JFET.
• When VGS = 0 V, ID = IDSS
• When VGS < 0 V, ID < IDSS

Dr. Komala.M , Dept of ECE

Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
27 Copyright ©2009 by Pearson Education, Inc.
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 E-MOSFET “Enhancement MOSFET”
Enhancement MOSFET or E-MOSFET is a type of MOSFET
where there is no channel constructed during its fabrication but
it is induced in the substrate using the gate voltage.
The E-MOSFET does not conduct when there is no gate
voltage i.e. VGS= 0v.
Therefore, E-MOSFET is also known as normally OFF
transistor.

Dr. Komala.M , Dept of ECE

Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
 Types of Enhancement MOSFET

Dr. Komala.M , Dept of ECE

Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
 Working of E- MOSFET
By applying a voltage to the gate, charge carriers are induced in the
substrate that produces a channel for the conduction of current
between the source and drain.

N-channel and P-channel MOSFET has the same operation as the Depletion type
MOSFET except there is no channel, to begin with; instead, the gate voltage is
used to inject the charge carriers in the substrate to induce a channel between
the source and drain.
The gate is connected in forward bias to induce the charge carriers in the
channel. Once the channel is induced, the current starts to flow between the
source and drain.
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
 Differences between Depletion MOSFET and Enhancement MOSFET

Dr. Komala.M , Dept of ECE

Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
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 Basic Operation of the E-Type MOSFET

The enhancement-type MOSFET operates only in the enhancement mode.

• VGS is always positive

• As VGS increases, ID
increases

• As VGS is kept constant

and VDS is increased,
then ID saturates (IDSS)
and the saturation level,
VDSsat is reached

Dr. Komala.M , Dept of ECE

Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
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 p-Channel E-Type MOSFETs

The p-channel enhancement-type MOSFET is similar to the n-

channel, except that the voltage polarities and current directions
are reversed.

Dr. Komala.M , Dept of ECE

Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
33 Copyright ©2009 by Pearson Education, Inc.
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 MOSFET Symbols

34
Dr. Komala.M , Dept of ECE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Copyright ©2009 by Pearson Education, Inc.
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