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4 - Current in Semiconductor

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11 views

4 - Current in Semiconductor

Uploaded by

bhuyanamartya2001
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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CURRENT FLOW IN SEMICONDUCTOR

There are two different mechanism for moment of charge carrier


and hence the two types of current flow in a semiconductor are,
• Drift current
• Diffusion Current
Drift Current
• The flow of charge carriers, which is due to the
applied voltage or electric field is called drift current.
• When the voltage is applied to a semiconductor, the free
electrons move towards the positive terminal of a battery and
holes move towards the negative terminal of a battery.
• The average velocity that an electron or hole achieved due to the applied
voltage or electric field is called drift velocity.
• The drift velocity of electrons is given by Vn = -µnE
• The drift velocity of holes is given by Vp = µpE
Where vn = drift velocity of electrons
vp = drift velocity of holes
µn = mobility of electrons
µp = mobility of holes
E = applied electric field
• The drift current density due to free electrons is given by
Jn= -enVn = enµnE
• The drift current density due to holes is given by
Jp =epVp = epµpE
Then the total drift current density is
J = Jn + Jp= enµnE + epµpE
J = e (nµn + pµp) E

So conductivity, σ = e (nµn + pµp)


Here Jn = drift current density due to electrons
Jp = drift current density due to holes
e = charge of an electron = 1.602 × 10-19 Coulombs (C).
n = number of electrons
p = number of holes
Diffusion Current

The process by which, charge carriers (electrons or holes) in a


semiconductor moves from a region of higher concentration to a
region of lower concentration is called diffusion.
• Consider an n-type semiconductor that is non-uniformly doped
as shown in figure.
• Due to the non-uniform doping, more number of electrons is
present at left side whereas lesser number of electrons is present
at right side of the semiconductor material.
• The electrons present at left side of the semiconductor material
will moves to right side, to reach the uniform concentration of
electrons. Thus, the semiconductor material achieves equal
concentration of electrons.
• Electrons that moves from left side to right side will constitute
current. This current is called diffusion current.
• Diffusion current occurs without an external Voltage or electric
field applied.
• Diffusion current does not occur in a conductor.
Cont..
• The diffusion current density is directly proportional to the
concentration gradient.
• Concentration gradient is the difference in concentration of
electrons or holes in a given area.
• If the concentration gradient is high, then the diffusion current
density is also high. Similarly, if the concentration gradient is
low, then the diffusion current density is also low.

• The concentration gradient for n-type and p-type


semiconductor are given by and resp.

Where Jn = diffusion current density due to electrons


Jp = diffusion current density due to holes
• The diffusion current density due to electrons is given by

• The diffusion current density due to holes is given by

• Where Dp , Dn is the diffusion co-efficient of holes and electrons respectively.

• The total current density due to electrons is the sum of drift and diffusion
currents. Jn = Drift current + Diffusion current

•
Questions
• Q: What is the unit of conductivity.
• Q: Difference between Drift and Diffusion current.
Examples:

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