A High Voltage Gain Sepic Converter Based On Three-State Switching Cell
A High Voltage Gain Sepic Converter Based On Three-State Switching Cell
- INDUSCON 2010 -
D1
L1 C1 D1 L1 +
Abstract - This paper presents a high voltage gain DC-DC
+ - + Vo
converter. The proposed converter is based on the Sepic topology C2 R0
Vi S1 L2 C2 R0 Vo Vi S1
using the three-state switching cell. This converter is suitable for - C1
-
applications with a high voltage gain between the input and the L2 - +
output, as well as, UPS and renewable energy system. Another (a)
b (b)
important feature of this converter is the lower blocking voltage b
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It can be also observed that the voltage stress across the in the inductors in the third stage, as well as the energy from the
switches is lower than a half of the output voltage. The lower voltage source are transferred to the filter capacitors C2 and C4.
voltage across the switches, allows the utilization of low The capacitor C1 stores energy provided by the inductor L1.
on-resistance MOSFETs, improving therefore the efficiency. This stage is represented by the circuit shown in Fig. 3.d.
As disadvantage, the converter does not operate appropriately
for duty cycle lower than 0.5, due to magnetic induction
problems of the transformer.
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B. Inductor Design
Using the expressions (1), (5) and the time interval during
the first stage, the current ripple on the inductor is equal to
( 2 D − 1) ⋅ (1 − D ) ⋅ Vo
ΔI L1 = (6)
2 ⋅ f s ⋅ (n + D)
In (6), ΔIL1 is the current ripple on the inductor L1, and fs is
the switching frequency of the converter.
Rearranging the terms in (6), the normalized current ripple
on the inductor is given by
2 ⋅ ΔI L1 ⋅ L1 ⋅ f s (2 D − 1) ⋅ (1 − D )
ΔI L1 = = (7)
Vo (n + D)
Fig. 6 is obtained using (7), and shows the normalized
current ripple on the inductor as a function of the duty cycle.
0.2
0.15
n=0
0.1
n=1
0.05 n=2
n=3
Fig.4. Theoretical waveforms of the converter. 0
0.5 0.6 0.7 0.8 0.9 1
D
III. THEORETICAL ANALYSIS Fig. 6. Normalized ripple current on the inductor L1.
30
The voltage across the capacitor C1 is equal to voltage of the
input source, then the inductors L1 and L2 are under the same
condition. The inductance of the inductor L2 is obtained using
25
(9).
Vo
20 L2 = (9)
16 ⋅ f s ⋅ (n + 0.7) ⋅ ΔI L1
n=4
Gv
15 C. Transformer Design
n=3
The high frequency transformer must be designed according
10 n=2
to the amount of processed power given by
n=1
( 2a + 1) Po
5 Pp = (10)
n=0 (1 + a ) 2
0 In (10), Pp is the power processed by the transformer, and, Po
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
D is the output power of the converter.
Fig. 5. Static gain of the converter.
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D. Output Capacitors Design The maximum reverse voltage across the diodes D1, D2, D3,
and D4 are given by (16) and (17), respectively.
Considering the output voltage ripple small, the normalized
average voltages across the capacitors C2, C3 e C4 are described V
VD1 = VD2 == i (16)
by (11) and (12). In Fig. 7 is shown the normalized voltage 1− D
curve using (11), corresponding to the capacitor C2, and in Fig.8
n ⋅ Vi
are shown the normalized voltage curves given by (12), VD4 = VD3 == (17)
corresponding to the capacitors C3 and C4. 1− D
VC 2 D
VC 2 = = (11) IV. EXPERIMENTAL RESULTS
Vi 1− D
A. Specifications
VC3 VC3 n 1
VC3 = VC 4 = = = ⋅ (12) In order to verify the operation and evaluate the
Vi Vi 2 1− D
performance of the proposed boost converter using three-state
10 commutation cell, a prototype with the following specifications
was assembled and tested.
8 Vi = 42 − 54VDC Input voltage range
6 Po = 1kW Output power
Vo = 400V Output voltage
4
f s = 25kHz Switching frequency
2
The assumed parameters are: the maximum boost inductor
0
current ripple is ΔI L = 0.15 I i max , the transformer turns ratio is
0.4 0.5 0.6 0.7 0.8 0.9 1
D n = N S / N P = 2.15 , the maximum fixed duty cycle of the
Fig. 7. Normalized voltage across capacitor C2. switches is Dmax = 0.70 to minimum input voltage, and the
10 output voltage ripple is ΔVo=0.15Vo.
B. Design Example
8
n=4
The inductances are obtained according to (8) and (9).
6
n=3 Substituting values in it is equal to
n=2 400
4
L1 = L2 = = 90.0 μH
n=1 16 ⋅ 25000 ⋅ ( 2.15 + 0.7) ⋅ 3.88
2
The transformer of the converter was built using the
0 push-pull DC-DC converter guidelines, for power given by
0.5 0.6 0.7 0.8 0.9 1
D (10). Thus,
Fig. 8. Normalized average voltage across capacitors C3 and C4.
(2 ⋅ 2.15 + 1) 1000
PP = ⋅ = 841.6W
The capacitance of each capacitor can be calculated using ( 2.15 + 1) 2
the expressions (13) and (14),
The capacitances of the output filter capacitors were
(1 − D ) ⋅ Po calculated using (13) and (14). Substituting values, they are
C2 ≥ (13)
2 ⋅ f s ⋅ ΔVo ⋅ Vi ⋅ ( n + D ) obtained as
(1 − 0.7) ⋅ 1000
(1 − D ) ⋅ Po C2 ≥ = 833nF
C3 = C4 ≥ (14) 2 ⋅ 25000 ⋅ 60 ⋅ 42 ⋅ (2.15 + 0.7)
f s ⋅ ΔV o ⋅ Vi ⋅ ( n + D )
(1 − 0.7) ⋅ 1000
In (13) and (14), ΔVo is the total output voltage ripple. C3 = C4 ≥ = 1.67 μF
25000 ⋅ 60 ⋅ 42 ⋅ (2.15 + 0.7)
E. Maximum Voltage across the Switches S1 and S2
The voltage across such capacitors must be higher than the
The maximum normalized voltage across switches S1 and values calculated using (11) and (12). Thus,
S2, without considering overshoots due to layout inductances, is 42
given by (15). VC 2 = = 140V
(1 − 0.7)
VS1 VS2 1
VS1 = VS2 = = = (15) 2.15 42
Vi Vi (1 − D ) VC3 = VC 4 = = 150 .5V
2 (1 − 0.7)
F. Reverse Voltage across the Diodes D1, D2, D3, and D4 The breakdown voltage of the controlled switches must be
higher than the value obtained using (15). Thus,
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42
VS1 = VS2 = = 140V .
(1 − 0.7)
The maximum reverse voltage of the rectifier diodes must
be higher than the values calculated from (16) and (17). Thus,
42
VD1 = VD2 == = 140V
(1 − 0.7)
2.15 ⋅ 42
VD4 = VD3 == = 301V
(1 − 0.7)
The components used to assemble the prototype are listed in
Table I.
Fig. 9. Measured gate-to-source voltages VGS1 and VGs2, current through the
TABLE I. PROTOTYPE COMPONENTS inductor L1 and current through the inductor L2 (10A/div.; 20V/div.; 20V/div.;
2.5A/div.; 10us/div.)
Diodes D1, D2 30CTH03
Diodes D3, D4 30TH 06
L1=L2 =90μH
NEE-55/28/21 (Thornton Ipec)
Inductor L1, L2 NL1= 23 turns (33x26AWG)
NL1= 23 turns (3x26AWG)
δ=1.31mm (gap)
Output Filter Capacitors C1, C2, C3, C4 2.2μF / 400V
Switches S1, S2 IFRP90N20D
NEE-55/28/21 (Thornton Ipec)
High Frequency Transformer Np1=Np2=10 turns (17x25AWG)
Ns1=22 turns (8x25AWG)
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application where high voltage gain between the input and the
output voltages are required, the proposed circuit is incased.
The practical application, such as, photovoltaic systems and
UPS systems requires this type of converter.
One advantage of this topology is that there is no direct path
for dc current between the input and output of the converter,
then in a fault condition the input voltage does not appear at
converter output. Other features that can be seen in the
experimental results are the lower blocking voltages across the
controlled switches compared to similar circuits, which allow
the utilization of MOSFETs switches with lower conduction
losses.
Fig. 13. . Measured gate-to-source voltages VGS1 and VGs2, secondary voltage The qualitative analysis, theoretical analysis, and the
and current in the transformer (100V/div.; 20V/div.; 20V/div.; 25A/div.;
10us/div.)
experimental results were presented for a 1kW prototype. The
converter achieved reasonable efficiency for nominal load and
better efficiency for lower loads.
REFERENCES
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Fig. 14. Efficiency of the converter, as a function of the output power. ISCAS´03, Vol.3, 25-28 May 2003, pp. III-435 - III-438.
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Switched-Capacitor Circuit”, in IEEE Transactions on Circuits and
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VI. CONCLUSIONS
This paper has proposed a non-isolated Sepic converter with
a high voltage gain based on three-state switching cell. In
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