Chapter 16.

MOS Fundamental

Chapter 16.

MOS FUNDAMENTALS

Sungg June Kim

[email protected]
http://helios.snu.ac.kr
p
 Chapter 16. MOS Fundamental

Contents
‰ MOS Structure
‰ Ideal Structure Assumption
‰ Effect
Eff t off an Applied
A li d Bias
Bi
‰ Capacitance - Voltage Characteristics

2
 Chapter 16. MOS Fundamental

MOS Structure
Metal - Oxide (SiO2) - Semiconductor (Si)
 Chapter 16. MOS Fundamental

– The most common field plate (gate) materials are heavily doped
polycrystalline silicon.
– The silicon-side terminal is called the back or substrate contact.
contact
– The more general designation: metal-insulator-semiconductor
(MIS)
 Chapter 16. MOS Fundamental

Individual energy band diagrams for the metal

metal, insulator,
insulator and
semiconductor components.

χi
Ec
χ
ΦM χ
( Ec - EF )∞
Ec
Ei
EF
EF
Ev

Ev

Metal Insulator Semiconductor Semiconductor with

b d bbending
band di
 Chapter 16. MOS Fundamental

Ideal Structure Assumption

(1) The metallic gate is sufficiently thick so that it can be considered

an equipotential region.
( ) The
(2) h oxide
id is
i a perfect
f insulator.
i l
(3) No charge centers located in the oxide or at the interface.
(4) Uniformly doped.
 Chapter 16. MOS Fundamental

(5) The semiconductor is sufficiently thick so that a field-free

region(“bulk”)
region( bulk ) is encountered before reaching the back contact.
(6) An ohmic contact between the semiconductor and the metal on
th back
the b k side.
id
(7) One-dimensional structure.
(8) No work function difference between metal and semiconductor.
 Chapter 16. MOS Fundamental

χi

Φ χ χ
Μ
Φ′
Φ ′
Μ
Εc

ΕF ΕF
Εv

Energy band diagram of an ideal MOS structure with no bias.

 Chapter 16. MOS Fundamental

Effect Of An Applied Bias

- Qualitative description

• General observations
– EF ( metal) − EF ( semiconductor ) = −qVG
– With VG ≠ 0, semiconductor Fermi energy is unaffected by the bias and
remains invariant as a function of position because of the assumed zero
current flow.
 Chapter 16. MOS Fundamental

– Since the barrier heights are fixed quantities, the movement of the metal
Fermi level leads to a band bending.
• In the metal, no bend-bending.
• In the oxide and semiconductor
semiconductor,
an upward slope when VG>0
a downward
d d slope
l when
h VG < 0. 0
• With no oxide charges, the Poisson's equation
yields a constant slope in the oxide.
• Band bendingg in the semiconductor is somewhat
more complex.
 Chapter 16. MOS Fundamental

• Specific biasing
g regions
g
– Accumulation ( VG < 0 )

•VG < 0 raises EF(metal) and the hole

concentration inside the semiconductor,
p = n exp[− ( E − E ) / kT ]
i F i

i
increases as one approaches
h the
th
oxide-semiconductor interface.
•VG < 0 places
l negative
i charges
h on the
h gate.
To maintain a balance of charge, positively
charged holes must be drawn toward the Si-
Si
SiO2 interface.
 Chapter 16. MOS Fundamental

– Depletion
p ( 0 < VG < V T )

• VG > 0 slightly lowers EF(metal) and the

hole concentration is decreased (depleted)
in the vicinity of the Si-SiO2 interface.
• VG > 0 places positive charges on the
gate, which in turn repels holes from the
interface and exposes the negatively
charged acceptor sites.
 Chapter 16. MOS Fundamental

– Onset of Inversion (VG = VT )

• As VG is increased positively, the bands at
the Si surface will bend down more and the
electron concentration at the surface (ns)
will increase from less than ni when E i
(surface) > EF, to ni when Ei (surface) = EF,
to greater than ni when Ei (surface) < EF.
VG = VT • At VG=VT,
Exposed
A
Acceptors
t
Ei (bulk) − Ei (surface) = 2[Ei (bulk) − EF ]
+Q
⎡ EF − Ei (surface) ⎤
ns = ni exp⎢ ⎥
-Q ⎣ kT ⎦
Electrons ⎡ Ei (bulk) − EF ⎤
= ni exp⎢ ⎥ = pbulk = N A
⎣ kT ⎦
 Chapter 16. MOS Fundamental

− Inversion ( VG > VT )

•For VG > VT , ns > NA.

•The surface region :p
:p-type
type nn-type
type
•In inversion, the depletion width changes
little since

⎡ E F − E i ( surface ) ⎤
ns ∝ exp ⎢ ⎥⎦
⎣ kT
 Chapter 16. MOS Fundamental

No Bias ((VG = 0))

EC

EF
EV
 Chapter 16. MOS Fundamental

Accumulation (VG < 0)

EC

EF
EV
 Chapter 16. MOS Fundamental

Depletion
p ( 0 < V G < VT )

EC

EF
EV
 Chapter 16. MOS Fundamental

Inversion ( VG > VT )

EC

EF
EV
 Chapter 16. MOS Fundamental

Effect Of An Applied
pp Bias
- Quantitative formulation
• Preparatory considerations
φ x = [E (bulk ) − E ( x )]
1
( ) i i
q
φ : the surfacepotential.
s

φ = [Ei (bulk) − Ei ( surface)]

1
s q

φ F = [E i (bulk ) − E F ]
1
q

ln(NA / ni )
kT
=
q
 Chapter 16. MOS Fundamental

F an p-type semiconductor,
For i d

– Accumulation : φs < 0
– Flat band : φs = 0
– Depletion : 0 < φ s < 2φF
– Onset i : φ s = 2φF
O t off iinversion
– Inversion : φ s > 2φF
 Chapter 16. MOS Fundamental

• Delta-depletion solution
Delta-depletion assumption :
– The functional form of the accumulation charge & the
inversion charge : δ - function.
– Because the depletion
p width increases onlyy slightly
g y once the
semiconductor inverts, it is assumed the δ - function of charge
added in inversion precisely balances the charge added to the
gate.
– The actual depletion charge is replaced with a squared-off
distribution
 Chapter 16. MOS Fundamental

– Accumulation :
• Because of the assumed δ - function, the electric
field and ppotential are zero for all x > 0.
– Depletion :

For 0 ≤ x ≤ W , with φ = φ S at x = 0 ,
ρ ⎡ 2 K Sε 0 ⎤
1/2
dE NA
qN
= ≅− W = ⎢ φS ⎥
dx K S ε 0 KSε 0 ⎣ qN A ⎦
NA
qN The maximum depletion width,
E ( x) = (W − x)
KSε 0
⎡ 2K Sε 0
1/ 2
⎤
φ ( x) =
NA
qN
(W − x) 2 WT = ⎢ (2φ F )⎥
2K S ε 0 ⎣ qN A ⎦
 Chapter 16. MOS Fundamental

W T [ μ m] T = 300K

0 .1

0 .0 1
15 16 17 18
10 10 10 10
-3
N A o r N D [c m ]
 Chapter 16. MOS Fundamental

– Inversion :

• The solution is established by merely adding

a δ - function of surface charge to the
solution existing at the end of depletion.
• The depletion charge,
charge the x > 0 electric field,
field
and the x > 0 potential remain
fixed at their values.

φ s = 2φ F
 Chapter 16. MOS Fundamental

Exact solution for the charge density and potential

assuming
φF = 12kT / q andT = 300K
(a) Accumulation (fs = -6kT/q)
6kT/q)
 Chapter 16. MOS Fundamental

(b) Middle of depletion (fs = fF = 12kT/q)

(c) Onset of inversion (fs = 2fF = 24kT/q)

 Chapter 16. MOS Fundamental

(d) Deep into inversion

 Chapter 16. MOS Fundamental

• Gate voltage relationship (delta-depletion solution)

VG = Δ φ Semi + Δ φ OX
Because ε is constant in an ideal oxide with no charges,
g
OX
Δ φ ox = x o ε ox
Since there is no charges
g at the interface,, ((in the depletion
p region)
g )

Dox = DSemi x = 0
K
E ox = s E s
Ko

VG = φS +
Ks K
xo Es = φS + s xo
2qNA
φS (0 ≤ φS ≤ 2φF )
Ko Ko Ksε 0
 Chapter 16. MOS Fundamental

At threshold, φs = 2φF

Ks x o 4qNA
VT = 2φF + φF
Ko K sε 0
 Chapter 16. MOS Fundamental

φs is a rather rapidly varying

function of VG when the device
p
is in depletion. However,,
when it is accumulated or
inverted it takes a large change
inverted,
in VG to
produce a small change in φs.

; delta-depletion solution, exact solution.