BUZ11

Data Sheet September 2013 File Number 2253.2

N-Channel Power MOSFET Features

50V, 30A, 40 mΩ • 30A, 50V
This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.040Ω
field effect transistor designed for applications such as
• SOA is Power Dissipation Limited
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching • Nanosecond Switching Speeds
transistors requiring high speed and low gate drive power. • Linear Transfer Characteristics
This type can be operated directly from integrated circuits.
• High Input Impedance
Formerly developmental type TA9771.
• Majority Carrier Device
Ordering Information • Related Literature
PART NUMBER PACKAGE BRAND - TB334 “Guidelines for Soldering Surface Mount
BUZ11_NR4941 TO-220AB BUZ11
Components to PC Boards”

NOTE: When ordering, use the entire part number. Symbol

D

Packaging
JEDEC TO-220AB

SOURCE
DRAIN
GATE

DRAIN (FLANGE)

©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0

 BUZ11

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

BUZ11 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 50 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 V
Continuous Drain Current TC = 30oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 30 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 120 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 75 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC

DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 50 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V
Zero Gate Voltage Drain Current IDSS TJ = 25oC, VDS = 50V, VGS = 0V - 20 250 µA
TJ = 125oC, VDS = 50V, VGS = 0V - 100 1000 µA
Gate to Source Leakage Current IGSS VGS = 20V, VDS = 0V - 10 100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 15A, VGS = 10V (Figure 8) - 0.03 0.04 Ω
Forward Transconductance (Note 2) gfs VDS = 25V, ID = 15A (Figure 11) 4 8 - S
Turn-On Delay Time td(ON) VCC = 30V, ID ≈ 3A, VGS = 10V, RGS = 50Ω, - 30 45 ns
RL = 10Ω
Rise Time tr - 70 110 ns
Turn-Off Delay Time td(OFF) - 180 230 ns
Fall Time tf - 130 170 ns
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 1500 2000 pF
Output Capacitance COSS - 750 1100 pF
Reverse Transfer Capacitance CRSS - 250 400 pF
Thermal Resistance Junction to Case RθJC ≤ 1.67 oC/W

Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD TC = 25oC - - 30 A
Pulsed Source to Drain Current ISDM TC = 25oC - - 120 A
Source to Drain Diode Voltage VSD TJ = 25oC, ISD = 60A, VGS = 0V - 1.7 2.6 V
Reverse Recovery Time trr TJ = 25oC, ISD = 30A, dISD/dt = 100A/µs, - 200 - ns
VR = 30V
Reverse Recovery Charge QRR - 0.25 - µC
NOTES:
2. Pulse Test: Pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0

 BUZ11

Typical Performance Curves Unless Otherwise Specified

1.2 40
VGS > 10V
POWER DISSIPATION MULTIPLIER

1.0

ID, DRAIN CURRENT (A)

30
0.8

0.6 20

0.4
10
0.2

0 0
0 25 50 75 100 125 150 0 50 100 150
TA , CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE
ZθJC, TRANSIENT THERMAL IMPEDANCE

1 0.5

0.2
0.1
0.05 PDM
0.1 0.02
0.01
t1
SINGLE PULSE t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

103 60
PULSE DURATION = 80µs
PD = 75W VGS = 20V
OPERATION IN THIS DUTY CYCLE = 0.5% MAX
AREA MAY BE LIMITED 50
BY rDS(ON) 10V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)

2.5µs
102 40
10µs
VGS = 8.0V
30 VGS = 7.5V
100µs
VGS = 7.0V
VGS = 6.5V
101 20
1ms VGS = 6.0V
VGS = 5.5V
TC = 25oC 10ms 10 VGS = 5.0V
TJ = MAX RATED 100ms VGS = 4.5V
SINGLE PULSE DC VGS = 4.0V
100 0
100 101 102 0 1 2 3 4 5 6
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0

 BUZ11

Typical Performance Curves Unless Otherwise Specified (Continued)

20 0.15
IDS(ON), DRAIN TO SOURCE CURRENT (A)

PULSE DURATION = 80µs PULSE DURATION = 80µs

rDS(ON), ON-STATE RESISTANCE (Ω)

DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
VDS = 25V VGS = 5V
15 5.5V
6V
0.10
6.5V
7V
10 7.5V
8V
9V
0.05
10V
5
20V

0 0
0 1 2 3 4 5 6 7 8 0 20 40 60
VGS, GATE TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

FIGURE 6. TRANSFER CHARACTERISTICS FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

0.08 4
VGS(TH), GATE THRESHOLD VOLTAGE (V)
PULSE DURATION = 80µs VDS = VGS
DUTY CYCLE = 0.5% MAX ID = 1mA
ID = 15A, VGS = 10V
rDS(ON), DRAIN TO SOURCE

0.06 3
ON RESISTANCE (Ω)

0.04 2

0.02 1

0 0
-50 0 50 100 150 -50 0 50 100 150
TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION

JUNCTION TEMPERATURE TEMPERATURE

101 10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS = 25V
gfs, TRANSCONDUCTANCE (S)

8
C, CAPACITANCE (nF)

100 CISS TJ = 25oC

COSS 6
CRSS

4
10-1
VGS = 0V, f = 1MHz
CISS = CGS + CGD 2
CRSS = CGD
COSS ≈ CDS + CGD
10-2 0
0 10 20 30 40 0 5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT

©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0

 BUZ11

Typical Performance Curves Unless Otherwise Specified (Continued)

103 15
PULSE DURATION = 80µs ID = 45A
ISD, SOURCE TO DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

DUTY CYCLE = 0.5% MAX
TJ = 25oC
102 VDS = 10V

TJ = 150oC 10

101 VDS = 40V

5
100

10-1 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50
VSD, SOURCE TO DRAIN VOLTAGE (V) Qg, GATE CHARGE (nC)

FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Test Circuits and Waveforms

tON tOFF

td(ON) td(OFF)

tr tf
RL VDS
90% 90%

+
VDD 10% 10%
RG 0
-
DUT 90%

VGS 50% 50%

PULSE WIDTH
VGS 10%
0

FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
VDS
CURRENT (ISOLATED
REGULATOR SUPPLY)
VDD

SAME TYPE Qg(TOT)

AS DUT VGS
12V
0.2µF 50kΩ Qgd
BATTERY
0.3µF
Qgs

D
VDS

G DUT
0

Ig(REF) S
0
VDS Ig(REF)
IG CURRENT ID CURRENT
SAMPLING SAMPLING
RESISTOR RESISTOR 0

FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS

©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0

 BUZ11

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Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production Semiconductor. The datasheet is for reference information only.
Rev. I66

©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0

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