EE 302

ANALOG ELECTRONICS
LABORATORY REPORT – 4

Name: KAAN VAROL

ID: 190202019
Laboratory Section: Tuesday, 11.00-13.00

Experiment Performed: 14.05.2024

Report Submitted: 21.05.2024

Introduction:
 o In this lab session, we focus on understanding the fundamental characteristics of a
Bipolar Junction Transistor (BJT), a crucial component in electronics. The BJT is a
device that amplifies current and can operate in three different regions: cutoff, active,
and saturation.

o Our primary goal is to explore how changes in the base current ( 𝐼B ) affect the collector
current ( 𝐼𝐶 ) and the collector-emitter voltage ( 𝑉𝐶𝐸 ), which are pivotal for the transistor's
operation in amplification and switching circuits.

o To facilitate this understanding, we employ a practical setup that includes adjusting

voltage and current parameters through a controlled experiment. By methodically
varying 𝐼B and 𝑉𝐶𝐸 , and observing the resultant changes in 𝐼𝐶 , we aim to map out the
characteristic curves of the BJT.

o These curves are instrumental in validating the transistor’s theoretical models and in
honing our skills in circuit analysis and design.

o Additionally, this experiment serves as a bridge between theoretical study and practical
application, allowing us to witness firsthand the effects of electronic principles.

o Through direct interaction with the equipment and the circuit, we gain a deeper
appreciation of the BJT’s behavior under different electrical conditions, enhancing our
overall understanding of electronic devices and their functionalities in real-world
applications.

Equipment and Materials:

I. Bipolar Junction Transistor Belongs to Lab-Manual (Y-0016/007)

II. Two potentiometers
III. Variable DC power supply (0-12V)
IV. Ampermeter
V. Voltmeter
VI. Connecting wires

Experiment Setup:

1. Circuit Assembly:
  Assemble the circuit as shown in the figure, using a breadboard for ease of
connections.
 Connect the emitter of the BJT to the ground and the collector to the collector voltage
supply through a resistor.
 Attach the base to the base voltage supply through a potentiometer which will act as
a variable resistor to adjust 𝐼𝐵.
 Ensure that the multimeters are correctly placed to measure 𝐼𝐶 and 𝑉𝐶𝐸 .

2. Adjustment of Power Supplies:

 Set the DC power supplies to ensure that the BJT operates in the forward-active
region, typically ensuring the base-emitter voltage is around 0.7 V.

Procedure and Observations:

2.1 Measurement of 𝐼𝐶 vs. 𝑉𝐶𝐸 for 𝐼𝐵 = 10𝜇𝐴 :

 Began with both potentiometers set to zero voltage.

 Gradually increased the base voltage until the base current reaches 10 µA.
 Adjusted the collector voltage from zero, noted down 𝐼𝐶 and 𝑉𝐶𝐸 at each step.
 Continued adjustments to obtain a detailed characteristic curve.

2.2 Repetition for for 𝐼𝐵=20𝜇𝐴:

 Reset the collector voltage to zero and adjust the base current to 20 µA.
 Repeated the procedure of recording 𝐼𝐶 and 𝑉𝐶𝐸.

2.3 Characteristics at Fixed 𝑉𝐶𝐸 = 12V:

 Fixed the collector-emitter voltage at 12 V.

 Varied 𝐼𝐵 from 10 µA to 50 µA in steps of 10 µA.
 Recorded 𝐼𝐶 for each 𝐼B value, calculating the current gain (𝛽) each time.

Analysis:

 Ploted 𝐼𝐶 versus 𝑉𝐶𝐸 for both base currents on the same graph.
 Calculated the current gain (𝛽 = 𝐼C / 𝐼𝐵 ) for each step and plot 𝛽 as a function of 𝐼C.

Conclusions:

1. 𝐼C vs. 𝑉𝐶𝐸 Characteristics:

 The experiment demonstrates the expected increase in collector current with

increasing 𝑉𝐶𝐸 and constant 𝐼B.
 A saturation point is observable where increases in 𝑉𝐶𝐸 do not significantly change 𝐼C.

2. Effect of 𝐼B on 𝐼C :

 Higher base currents lead to higher collector currents, illustrating the control 𝐼B has
over 𝐼C.

3. Fixed VCE Observations:

 At a fixed 𝑉𝐶𝐸 , 𝐼C increases with 𝐼B, showing that the BJT is in the active region. The
gain (𝛽) values calculated illustrate the amplification capability of the BJT.

 By the figure-1 below, we set the circuit up, as measuring current by ampermeter from
the base (gate) hand.
 Figure-1

 On the below circuit figure-2, we measured the current from the drain (collector) hand.
 Figure-2

 In the above circuits, at the same time, we measure the voltage, by red and black
cables.

 At the below table, we got the values of IB, VCE and IC that we measured during the
laboratory.

 As Mr. Menduh said to us during the laboratory, and as you can see the circuit above,
we set the circuit right. But at the end, our values in the table are wrong. Together with
Mr. Menduh, we tried on the circuit for many minutes, changed components and tried
again, but at the end, it doesn’t change any values.
 But anyway, I put the values and table below, and also graph is there in third question,
related to below table (figure-3).

Figure-3

 Just in case, I set up the circuit by Proteus and put it below (figure-4).
 Figure-4

 Results are not really expected in graph, because the values are not surely true,
according to the teacher.

Conclusion
o Throughout this laboratory session, we successfully explored the dynamic
characteristics of a Bipolar Junction Transistor (BJT) by analyzing how variations in
base current ( IB ) affect the collector current ( IC ) and the collector-emitter voltage (
VCE ). By carefully adjusting IB and VCE, we observed the expected behaviors that
underscore the principles governing BJTs.

o Our experiments clearly demonstrated the direct relationship between IB and IC ,

confirming the BJT's role as a current amplifier. As we increased IB , IC also increased
proportionally, showcasing the transistor's ability to amplify signals within the active
region. This outcome aligns with theoretical expectations and validates the BJT model
used in electronic circuit design.

o Additionally, we plotted the IC versus curves for different values of IB and observed the
saturation and active regions of the BJT. These plots were crucial for visualizing how
VCE influences IC , particularly how it reaches a saturation point beyond which increases
in VCE have minimal impact on IC.

o By fixing VCE and varying IB , we further analyzed the BJT’s response, calculating the
current gain (𝛽) at each step. This not only reinforced our understanding of the
transistor's amplification capabilities but also provided practical insights into its
operational limits and efficiency.

o In conclusion, the experiment was instrumental in bridging the gap between theoretical
knowledge and practical application, offering a comprehensive understanding of BJT
operations. The observations and data gathered will serve as a solid foundation for
future projects involving BJTs and other semiconductor devices in more complex
electronic circuits. Through this hands-on approach, we have enhanced our ability to
design, analyze, and troubleshoot electronic circuits that incorporate BJTs.