NPN 2N2218 – 2N2218A

2N2219 – 2N2219A

SWITCHING SILICON TRANSISTORS

The 2N2218-A and 2N2219-A are NPN transistors mounted in TO-39 metal case .
They are designed for high-speed switching applications and feature useful current gain over a
wide range of collector current, low leakage currents and low saturation voltages.
Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Value

Symbol Ratings 2N2218 Unit

2N2218 A
2N2219 2N2219
A
VCEO Collector-Emitter Voltage 30 40 V

VCBO Collector-Base Voltage 60 75 V

VEBO Emitter-Base Voltage 5 6 V

IC Collector Current 800 mA

Tamb = 25° 0.8

PD Total Power Dissipation W
Tcase= 25° 3

TJ Junction Temperature 175 °C

TStg Storage Temperature range -65 to +200 °C

THERMAL CHARACTERISTICS

Symbol Ratings Value Unit

RthJ-a Thermal Resistance, Junction to ambient in free air 50 °C/W

RthJ-c Thermal Resistance, Junction to case 187.5 °C/W

1|4
 NPN 2N2218 – 2N2218A
2N2219 – 2N2219A

ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted

Symbol Ratings Test Condition(s) Min Typ Max Unit

VCB= 50 V Tj= 25°C 2N2218-2N2219 - - 10 nA
Collector Cutoff IE= 0 Tj= 150°C 2N2218-2N2219 - - 10 µA
ICBO
Current VCB= 60 V Tj= 25°C 2N2218A-2N2219A - - 10 nA
IE= 0 Tj= 150°C 2N2218A-2N2219A - - 10 µA
Emitter Cutoff 2N2218-2N2219
IEBO VBE= 3.0 V, IC=0 - - 10 nA
Current 2N2218A-2N2219A
Collector Cutoff
ICEX VCE= 60 V, -VBE= 3V 2N2218A-2N2219A - - 10 nA
Current
Collector Emitter 2N2218-2N2219 30 - -
VCEO Breakdown IC= 10 mA, IB= 0 V
Voltage (*) 2N2218A-2N2219A 40 - -
Collector Base 2N2218-2N2219 60 - -
VCBO Breakdown IC= 10 µA, IE= 0 V
Voltage 2N2218A-2N2219A 75 - -
Emitter Base 2N2218-2N2219 5 - -
VEBO Breakdown IE= 10 µA, IC= 0 V
Voltage 2N2218A-2N2219A 6 - -
2N2218-2N2218A 20 - -
IC=0.1 mA, VCE=10 V 2N2219-2N2219A 35 - -
2N2218-2N2218A 25 - -
IC=1 mA, VCE=10 V 2N2219-2N2219A 50 - -
2N2218-2N2218A 35 - -
IC=10 mA, VCE=10 V 2N2219-2N2219A 75 - -
IC=10 mA, VCE=10 V 2N2218A 15 - -
DC Current Gain Tamb = -55°C 2N2219A 35 - -
hFE -
(*) 2N2218-2N2218A 20 - -
IC=150 mA, VCE=1 V 2N2219-2N2219A 50 - -
2N2218-2N2218A 40 - 120
IC=150 mA, VCE=10 V 2N2219-2N2219A 100 - 300
2N2218 20 - -
2N2218A 25
IC=500 mA, VCE=10 V 2N2219 30 - -
2N2219A 40

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 NPN 2N2218 – 2N2218A
2N2219 – 2N2219A

ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted

Symbol Ratings Test Condition(s) Min Typ Mx Unit

2N2218-2N2219 - - 0.4
Collector-Emitter IC=150 mA, IB=15 mA
2N2218A-2N2219A - - 0.3
VCE(SAT) saturation Voltage V
2N2218-2N2219 - - 1.6
(*) IC=500 mA, IB=50 mA
2N2218A-2N2219A - - 1
2N2218-2N2219 - - 1.3
Collector-Emitter IC=150 mA, IB=15 mA
2N2218A-2N2219A 0.6 - 1.2
VCE(SAT) saturation Voltage V
2N2218-2N2219 - - 2.6
(*) IC=500 mA, IB=50 mA
2N2218A-2N2219A - - 2
2N2218-2N2218A
Transition IC=20 mA, VCE=20 V 250 - -
fT 2N2219 MHz
frequency f= 100MHz
2N2219A 300 - -
IC=1 mA, VCE=10 V 2N2218A 30 - 150
Small signal f= 1kHz 2N2219A 50 - 300
hfe -
current gain IC=10 mA, VCE=10 V 2N2218A 50 - 300
f= 1kHz 2N2219A 75 - 375
IC=150 mA, IB =15 mA 2N2218A
td Delay time - - 10 ns
-VBB=0.5 V, VCC=30 V 2N2219A
IC=150 mA, IB =15 mA 2N2218A
tr Rise time - - 25 ns
-VBB=0.5 V, VCC=30 V 2N2219A
IC=150 mA, VCC=30 V 2N2218A
ts Storage time - - 225 ns
IB1 = -IB2 =15 mA 2N2219A
IC=150 mA, VCC=30 V 2N2218A
tf Fall time - - 60 ns
IB1 = -IB2 =15 mA 2N2219A
Feedback time IC=20 mA, VCE=20 V 2N2218A
rb,CC - - 150 ps
constant f= 31.8MHz 2N2219A

(*) Pulse conditions : tp < 300 µs, δ =2%

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NPN 2N2218 – 2N2218A
2N2219 – 2N2219A

MECHANICAL DATA CASE TO-39

DIMENSIONS (mm)

min max
A 8.50 9.39
B 7.74 8.50

C 6.09 6.60
D 0.40 0.53
E - 0.88
F 2.41 2.66
G 4.82 5.33
H 0.71 0.86

J 0.73 1.02
K 12.70 -
L 42° 48°

Pin 1 : Emitter

Pin 2 : Base

Pin 3 : Collector

Case : Collector

Revised August 2012

Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.

www.comsetsemi.com [email protected]
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