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Power Electronics Questions

MAKAUT UNIVERSITY ELECTRICAL ENGINEERING NOTES & SUGGESTIONS

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25 views

Power Electronics Questions

MAKAUT UNIVERSITY ELECTRICAL ENGINEERING NOTES & SUGGESTIONS

Uploaded by

koushikmondal4507
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Power Cleckponies Ae Exh Loin With meee Donel err dae fainciple f oporatiia yf an Re taigg ry inet - Reserihe phe obiffenamk modes pp ocin & : Miyrister uring stehic vt eS Ee «hat 's jis ebfect of ge varent on hats chanackerintion 5+ Ruma & explain eigtuil diegram for He dyrdronted vad Aa gyerig Myo dan qa Arve ctabed Howe 4 - With the Sra\l ¥ Kye. “wo Yramsd (Acar moaah enti eee a Amal ae udhdemnt can jnihiede Aan ove reehandam in SCR. o Woike ghosts notes on Ane Fematng— | 0) GTDd %) Power MoseeT 2 taser 4) Power Arodes. Qe) +TRIAG 6 Hoo gi aE & Oe beteston marr rchieved_ gn eK. 41. What He neces ity oe Com Hg SRS in Ole, 7 Mat ane Ahn problema wsoioted wide dertes comedy EAE 7 Hoa “an pity eliminated ? Or, Naik short netes on — soos portion Ff she Asihe shat mefer on —Poraltel cperotion of SRS. BP resiaton fit alaeutt of thy Raters. kat Bs He _shnsg angle range of fetiston @ Fe Si wacut cf Shy pintord? Explain She ote cathode Chonactsrtaties =A SA wits fhe Asundarted « defnn holeling earsent 2 Satching Carend . cables be working prmncifte and drao phe Vote — amd characte whfr'ed we a SR. Anas) jhe efusbalonk atheiila of 2 604 ae - p . , pee RB fue Jive ton ali'fton » und ea. tncif la. | explain wth -eipemit Li pam Ha oferabing Bi od Joes WOIe “ . a ste f- on - a fn Phew - eWAe os th . cnet of oP RC Firing Circuit 5 ; © Limitakion of vesistamee firing : & comnot be grater tham Jo” *R: variable, changes the time Constant oF ckt — Take chorging of cap varies = the pale or time ak which \y exceeds Vge wi, ona © DyPrevents flow of qwerse curyemb, oD charges cap diving -ve cycle ScR trig gered RC Firing Circuit eo whem ScR is OFF, C charges to a-ve voltage through Dy : Bs = saci -ve half cycle , ? Vpo : 2 during He cycle, cop i a Charges towards positive Yuba troiah R # as soon.as We exceeds & ‘ Vet Vo then SCR tora med tes ON RC Firing Circuit J Vg > iR + Ve Vs > Rt Vs > fare Vge #M, << at time triggerng RE Vs- a -Vp 4 7 — emumority carrendltee = @ Construction eat dur 0 p-m.qunction- Anode (A) 4 Anode p-emitter n-base Gate p-base Cathode n-emitter Cathode (K) Gate (G) 1 Construction ; r o Anode & cathode regions are highly doped cohereal” gate “ Pedorataly doped { dnft Jager ss Lightly doped 2 SCR cam be visualized as fo BIT Cpnp npr) connected tagethen © SCR is Oo “econ cartes dwice & it has 3 pn gumctions t= Ton, Tope = highest » 450 = Seast |» move switching Loss | more condluctwity modutation, Jeart Ron - > mninimum ON state dvop & vnin™ cond” Loy + Highest csrvemk rating Construction , [ o SCR contamg three ‘pe yonctens AI omede K dnp — dmode highly dope Sep width Low T, dupe & gate — Aigitly doped. dep-width highest “gate K cathode > cathode highly doped. dep woth: Low © Sunce there is Ligne doping on both side of so BD voltage 1s highest fox gorcin qh. Reverse Bocking \ ne ghee e Gmode is Connected to negative f\ Supply termmal of. supp while cathode ts Connected to positive terminal of Sepply Reverse Bocking o Ty, Tg ‘vevetse biooed while T, forword brared 0 Ober yumctionp ave reverse brased. «hile (rmer junction 16 forward beosed o the entive Twerse volt vs homdled Py A&A, while T dow nek handle. much voltage: oly bios’) ° Reverse Breakdown voltage depends on BD voltage of FR ° depletion Sayer ak T,& T3 dow net Jet Plow of maonty Carviers ve: holes from amode & © x froxn cathode: x Pe 8 Forward Blocking © Omode is connected to Positive. terménal ef. battery & cathode ‘bo negative termenad +} bakery beos a fonaard Yeyerse forward Forward Blocking | ° 322". {rert"" Across jwmebion J, “e ps — oh, ty forward &hovuerce | forward, block con pil or our yumction ove fora ' — copa & ener jumetion is weverse ape OD) Ma © Sees. BD voltage of Ta is higher 4 ee at : foroard breakover witage of SCR is generally more thon ened aD volta: CRsyrmmetvicah ScR) © Reverse qn J, abws Flow oh ein Cayrier’ hence senall leokege, ev Forward Conduction p o When. the forward. voltage ws grater thom Porward breakeue- Voltage . qumction L breaks down & a flood of chege. corners flow © When Such charge carmiers Plow through device, conductivi modulokion tales place in dpe Anges & Ron rapidly edu i ‘t % voltage drop across dice reduce & we see o on ‘Tesistance characteristic Significance of Gate Current. J a 0 When voltage is applied b/w gate Cokhode, ¢ ake Cathode. ad Pa forward brosed > forsard broved yumetion allows the flow jority Carneys » So e& enter into gate region from cathode & holes from fate 49 cathode ont Significance of Gate Current o © enterene ae ate Tecombine with hole js vs Modurake doped so most of € Ove swept my E-fidd. unto dof Joga o athe holes fram anode now acts as gate/eureent Ka. teguneraive™ process 1s Seb-up © once amode current rites above a * To compensate these & bakter4 Cevtan pany a ia races ¢F i bf PRK Sippler holes to, anode Wate cre curent © be oe curtenk tam be temovel * Gore holes secombine with & ~ but-Fest ave swept by elects Field into gate Significance of r 4 - Gate Current © GS Goke current increase, more, charges are Quaslable im device © So, due to more coy prevent im dwice, BD voteng ts downed Forward \ 4 Breakover 8 Aronge density Woltage: * Fe-forwoard breakover voltage Of deuce reece as gabe Current merearg: Gate current 4 @ UudsT Oscillator ° when UIT: OFF r Fexo | RC series ck is formed. with veltage Veg C chorges towards Vgg theough R @s soon as Ye exceeds Vp urT turns ON e discharges through UTT & wesistor c 2 R, cathode, due to current ‘throwgh R,, Vo is deweloped . which triggers SR J ; 08, help of OsT, Ee perfor 7 UJT Oscillator si gpg © Ve oscillates b/w peak & - volley volt ¥ » VeCo)= Vy Velo) = Ves ™ Vele)= Veg + (Wv- Vea )e , ab toT, ae Wqigiertie = Nee = Veg C!-e*) ; rt I z int i 3 I-n2e “oi na ,*\S *Xa) . Re dy xX Current Flows through RR a 2 Transistor Model A 2 Transistor Model ~ [ > when we apply gate Current it increases Pez Yi woh fey, - automat increases ap _ wh curremt, + faye fax fy oli mera" aches aba - Sie pie ey also imcreanes Certain value, we Cow remove gake current » ae Rf Pep alto ine & this Sa feedbaok, Gant qn ae 7 fot — tat 2 Transistor Model fort. £- fh = Be ee 2 Rina fs feo ot fe componemt of Collector cuerunk due to Chorges coming ‘vom. emitter & Common, base currenk gain (< ) Reo severse gat curremk of collector bore _ qe Berra cry Sele dat je Cipeyien ere y bacon, Crean are ieee anna aay f Dea AC ak which, rs Dae fren teee Meret cisC.)) fea anon (eee eae Re CrnsC See Pa Gee eet) are ere) a eCea ers Ecce) Lae ° rr ats Ec a Oe ee matte} a Tole or Ca ne B H Sie Ei guns. cffective ae CMe a0 Rete Rae et ca s ee emitter charges im base ames: ee oe ns When CB junction is rwerse biened, i het Sager es a ca) ae re anor! poor AR ea SA ad a Se a Foal Ls cottector boce jumetion ef both Tx it RB SDL rn MCC sis Cer Ca Ya US LTC Cao Snood RY] cero Darn Lar Ci Sa ve Crea SUAS Rc ect cc Rca SL breakover happens: (a ~/ SOUR Sa Gate turnoff = ~ Thyristor © o Pe iw cated ox GTO became GTO ant Pengers xt com tusned off b Speed opp -ve gote pulse Cfily controlled. sitet) 4 ap 7 ri f J snutti corrode K structure Bi po cose qate Cathode(k) Gate (6) ee Switching of GTO Turn ON 2 GTO most be forward biased (Vax >0) ° Ef we ser BN ate current thyn oe erakive P wh is sek Up % which SCR Rete turned fy Pot — fat — fat - fut <—*£,4 Switching of GTO Turn ON » GTO must be forward, biased ( Vax >0) i £f we apply positive a cursent then a Tegenerokive P ocess iS Sek Up of om SCR ge turned ON: fy . ‘Ter l <=> Et —a fait | I Ft <— fn Switching of GTO Turn OFF o A dorge nagobive ote current of the Some order as Gnode axerent is applied a gets diverted towards gate derminal Pt © Thos, we have Femoved base drive of , J & gradually G, turn OFF oe as Q, turns OFF, ford 7 falofd” “W gradually Ly bewmes © Turn OFF Gain o rakio ef omede current being turned OFF to the gate carrot Acquired to turn oFF during turn OFF, qu mh x4 o Turn OFF a ct GTo ¢s yee poor ( Power MOSFET Construction aA” ir MOSFET: metal oxide Semiconductor fied effect transistor © Body or substrate ‘s ©. p-type semi cond” inside Which we ont Construct 7P rt Colle OS, Soy ms © Source ts vesponsible os F providing charge Carviers to device Working eDrain is resporible For charges Leaumng the device” * Gate contrat stake of duice Con/orF) so that charges cam be allowed, to foo bio Source & drain s Ol + Brswahon unde gate terminal dow nat alfow mt a current from fe derminal to enter dwice bak y WW due to positive ‘exminol of battery am E- fied prbaly bs Produced, downord Ce away ftom qt ® E-fidd pushes holes in body cong from ‘be a b Akbracts electroog Under the gate Bo op ; we aa inside body Working © QS Soon as e Conc > hole conc wmder ae thun ED under eC besomes n-type & process ie coiled fiversion Charge flow: source — a-chamnel— drift > drain t entive pakh is n-type makaial, & hence catted as TA40T! t Carrier device eNO oO iad Ca cou aan) Mas Co *? entive path is n-type Semiconductor so , it witt be modeled as resistomce in ON state Circuit Representation MOSFET body Drajn(D)) amslly.comnecteg Drain (D) to source terminal 9° I a | Ssy o a Tela Lal fa Gate (G) - Gate (G) O— Source (S) Source (S) N-Channel P-Channel Characteristics MosFET: channel's formed. tohem Vas > Vr Vit: Threshold. — voltage | < parabole (lo) Gate-Source Voltage (Ves) Safe Operating Area ‘maximum clone 0 3 himits e-max™ current Limit © -mox™ volt 2 eg ee Ro © max’ poo Limit “S Sine ; In © mo concept oF second Lose breakdewn tn MOSFET: Co current caited Peas bv voltage MOSFET). Limit Body Diode : BAD] o the Aagion. Creabes a pn jumction, diode with dif & doin region be source & drain + The conventional direction, of current flowin n-Mos is from dvain to source but body diode carried current from source to drain nated device bidivectional D p Ret Tas Aimilar to npr i transistor 5A be «| - — r P s Hs ‘n-channel MOSFET 8 ' IGBT Cae oe Insulated Gate Bipolar Junction Transistor Constriction —r at ip o We have veploced mt drain HLT er of poor MoseeT with pt collector dog on SK Poor 4 3 © Source — emitter 4 droim —> collector = gate gote vec Working * r « Gate voltage i applied to ag 7 ‘create chamned under aes terminal e Metal © Once a chomnel ie creaked, = =m the duice behaves 9% toad pn jen diode b/o Collector & emitter Vee Working - i ‘ i selectrons flow from. emitter to collector A fBles Prom Gbllector Lo emitter, so dwice is classified 9S a) Bipolar device == * Current flows from collector tolemitter just dike npn — transistor © £G8T dow not contain hy eo but it contain a Poa duce Characteristics Ic Active Saturation VcE Latch up o When currents flow through Poor, due to Jakenol current . there ts a voltage drop bliw p-bady & mt emitta due to this voltage drop blw p& at “cur or b/w gate & cathode of thyristor, the thysiston may get triggered once thyristor is triggered . it Carvin Curvenk from Collector to emitter & gate lose, Control ees ae ae ee et em at cmon 7 ( & device cam only be Bama i were bravin Cree this cond” is undesirable & cate CaM Ge at which IGBT can f Power Diode _ Tr Construction BA o PEN structure LAB refers te intrinsic + ak-the border of pt 8m egion there i formakion of depletion Loy Construction © PE duvices have vertical. ovientation which is ‘Tesponsible for high Gurvent Aaking of davicr © Drift og xox dig eee region £ a od brome dwice inserted to, cneremas Voltage waking of te deuce © voltage waking: Breakdown voltage Of I. teoese mentee ete Sane Diode vs Power Diode ny ; he, deped azgion called drift wepon. ts eer fats pr « Device has verticah orientation (Move CS ares) so higher Curent." move CS are Aaking SS * Sugnab:diode: Fp» mR Powe dite: Fo: amp | ~CeeI q Nip: volt Vp: kv Pe mw % ven ial - We, LOTT Charge Neutralit i-G.4 © mo: of = no of holes veambining = _ to form depletion fe eo ea © -ve ton cheng = tye fon choy pe Se all (uae A xp = Cpe) Ata. 9 9 Nytp = Np%m}=»met charge yi Naeping een 2g Charac' Uns Ma ap tap Job © ayn Cone: Na /cm® If No< Na %m7%P i dep. width * Pam teristics Veo * Cn "he drift Jaye: No= Low YY =high Veo i, =hig -_ Chavacteristicg 3/29 Conductivity Modulation a 5 Si # Conductivity ofa semiconductor is given. by. woah resistance of oe [niimt pup] dice ie high m= electron cone Ups hole mobility then conduction = hole cone Josses Aig = & mobidit © Sence Avift Loyer is Sight doped, charge Cone is " Low in Veo oH low, ~ high 7/29 f ene) di — tae) — ‘oo K—linear due to drift Veo / i Ow jv Tee dritt Layer, doping Cane « Low n dif oy poi Charge conc: = ce a Ravigt high — drop i drift regiow PR dominates exponential ditt ‘region QR henet, cn a aed pr taaths charge carriers diffuse into 1 ofa ° this Mmeveases SE Cen oma tas Brena) Ss gy Gril id Og eee Conduct PC Cea bors eer Maes on MT, MT, i Physical Construction Two-Thyristor Analogy Circuit Symbol Triac j : » When MT, Ctve) & MT Gve), Ta iseim forward. blocking mode When -ve iis pubs is applied to Ny , To begins to conduct { —-— + When MT; Cue) & NTE Ctv8), T, is en fonoard blocking mode when positive pulse is applied to BT, begins +0 Conduct: Mr, © bidirection & bipolar=switch aménority carrier dwice . Fatty controlled Switch rn, a * Used in f ‘om. Tegudakor : ® raking < 2 antiparallel SCR di . J 5 a a Fe Protection » Ef current increases rapidly, then current ray becorme high im a. very Short durakion of tame cond. © fh such a time, if conduction oTe&. Ove doe not enc Top idly then gh arcrink flows tapas Small Oreo ° temperakure ca such Small avea tne to a Ving high value teoding 40 formation a Local Hotspot z Protection = - a3 - dt Connect an Inductor in series with SCR + Enductor opposes chomgs of curve & hunee educa ° dy toa safe value R desivable:_ dy < (aang Conduction. Increase Gurremt Area Higher Gate Current Structural Modification SU a ie Rea charges ca nema a ed ake Beane CL atTony Peet oe beara: Maro a pa Ss sums a ad Care So we coll Such aven as eee (oars — To increase cond” area Seo era) Se Perea eeu acts ear Che eC mae | has aeet SP mers DCN rcrmcnat orn veer ee a mal ea Cer wa bigher a ar Enter digitated structure eal Le] Ea smal ae yee Pp Cost lever = ‘at A ae B w| ce i ] Pil =< aoe Pe are Eo Cie Riccmuitaee > easy for a a to Spread throug houk dv . ae Protection o hu dig, Acvoss a SCR in forward. blocking mode falsely triggers the SR, © Capacitor opposes Chamge of voltage Discharge s Current So it is comected across SCR \ Load RL dv . a Protection tegen. Ady y RC series ckt is formed through Vs, RL &C eee “%) Rs [Cs ieee Ret g Tv 5 [>| Discharge dip Wy ee $ Current lt se f ly dy) 2 < (®) v Load), dt | wox Ric A Fraped oumder steady State, Cs i Seas ca BCR ae we Toa e tenet Ca) sears () Connection of SCR Series Connection : To increase blocking voltage Series connection © Characteristics of 2 seR Connected in series Are nok identical se when thy Carry Same Current rrward blockins mode, Voltage across them is umequal (< toof, ) i if volta across amy gk w= exceeds rated oe thev SCR may, ae dan: Series connection o fm order to -make distribukion uniform, we use Stakic equolizing ' } s Ckt where @ Fesis tamce 4 ‘ is connected across @ach? SCR Re nVim- Vs ' Cnet) Bf i} seingvorneecvo nz nove? series SCR \ls: string voltage Vpm= max™ blocking voltage af = Be Bw Loeurvent dui blockrng St Series connection . dosing naersecreemny I o different ScR hawe diff value of reverse f crecovery charge & hence take ie time to recoun. ve © abt, , SCRL has verse voltage ab SCR 2 has Twerse wane ac © scr Lowecovers foster So it with habe to block entire Teerse photo ge : i Series connection o Connect one C across each SER elie Dynamic. { © Re Limits dischavging equalizing “A; Curvent of c apc IR ° diode vs active dierith charging of i c Cc} ° C= Dds by Tom - Vs i i xy) i: Qa (max) - QuiGmin) Teuerse may Series connection C= (mya 8 ; | Vom -Vp os R= 1Vom-Vs (n-) b& - (b) 8) Connection of SCR Parallel connection : To increase conduction current Parallel connection © due to non-idemkicol chanacteristies durin Conduction, both A hove umequa currents even a Same iV Voltage > ome SCR might get oleleaad j ° forward conduction. 1 Difficulties in Parallel Operation Same turn ON time Ls ScR may hove unequal turn ON time Loone SCR turns ON) fate than other SCR Ly asssoon at some SERs turn ON, the voltage drop across parallel comb™ reduces te, ipv< finger voltage, other SCR wilh fail to-turn ON: Difficulties in Parallel Operation Same temperature rise Le if ait SCR operake at duff temp ° To avoid this SCRs most be hen due to effect of then da fer eo tad. Some Characteristics, the chav heabieinks Chamge leading to non-umiform Current dust Difficulties in Parallel Operation Uniform current sharing Lidue to non-tdenbigal char, current dist is nom-wniform Difficulties in Parallel Operation vheab sink Symmetrical arrangement SX Uf SR axe not arranged pmmek ve oi, | ony ‘then each one has differumk flix & OO hence digf- current is induced = aan s ne Midpoint reactor 5 I Pet, ub Vue lid >0 Vin = lodingo™ F dk dk Vive V-Vu Via V- Ma Vn by iro Mat Va Vom sinwt ScR — Nye Mn Re R+RaR Resistance Firing Circuit » SCR gets triggered. when 4 exceeds a threshold value pe o> Nye SCR ON Ym sinwot > Vye we > Sint! Ve Syme R_ Rk, ret asR,t, at a5 o \ mst He pinoy angle range of fastsdar bring ase 4 9° +02 Fo" Tha fining angle mange of findg Ane oo de [80° W Gate Cathode geod oct | | Characteristics @ Gate cathode chav esemble that o+ a preganction dio = Gate Cathode - Characteristics « here ove 2 Limits in char LL amin™ curvent Le rnox™ current o Limitg VAS Vocmnen) < \y < V4 oa operaking Aegon, conny < £) < Fyenon t y= Vy fy < Paemax) Vignin a Sib ere (xy> comet) Gate Cathode - Characteristics © Gctwal char must Lie bfw min™ & max” char By ke Vans the intercept, fy-0, Was & intercept, Vg=0 5 Fy: fy Slope of Load Line == Ry . a ¥% ~y % < Frew Gate Cathode - _ _ Characteristics © wad Line hs €,-fyRs “Patron. a or Remim < fy < Facmaxy s 7 q 4 Mi ste ie 44 4 Ly usd he Pemex if gate Pw < loousy ose: iy Fy cam f gate Pw> loos . aye fC%) equation of gate cathode chav: @ Latching and Holding Current © atching Current * Mimimum omode curremt above which omode qurrent of a dwice must (ncreone to tusn it ON LScrR gettin Jatched tmphies thok ScR fees trapped into conduction state © Once anode current becomes gator tham Aotching oxermt we Cam remove ee pulse: L we derive minimum widleh of qe pulse vequired ee ocd cen SICA cea eee Bere srl (sais rs Scena Pere Be ieee nt also ee Lean Sopra eee slg De oe unas Oa A Ai Este below Bl (ren cals — : Fras 2 Re fan ty am&wer f Guectton Now — 2 ae : pest Refer fo amu of Gusstion Now & , cS - . ae | pense - Refer te am ivy f Question Now 5 (@) — @ = = i Reverse Recovery & Softness Factor [S] - - a o The process of tumoval of stored 4 Charges tn device to form depletion e¥ so thak dewice Com block veyerse vo lenge is called Twerse Tule . Reverse pee time is the time from, which Twerse Curcunt Stats to flow to the me current reaches 25 fo of max™ Fevesse Current Van + softmess fitter, &- ty - — fiw ta _ Supt ve « Sst Bion = (%) bo ed - - Anappy _ S<

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