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Bec301 Electronic Devices

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20 views

Bec301 Electronic Devices

Uploaded by

Santosh Thakur
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Subject Code: BEC301


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BTECH
(SEM III) THEORY EXAMINATION 2023-24
ELECTRONIC DEVICES
TIME: 3HRS M.MARKS: 70

Note: Attempt all Sections. If require any missing data, then choose suitably.
SECTION A

1. Attempt all questions in brief.


Q no. Question Marks
a. Discuss thermal Equilibrium Condition. 2
b. Illustrate the energy band diagram for PN junction in reverse mode. 2
c. A transistor has an α of 0.98. Determine the value of β. 2
d. Illustrate Electroluminescence. 2
e. State the de Broglie principle of duality. 2
f. Write properties of MOS capacitor. 2
g. Differentiate between drift and diffusion current. 2
SECTION B

2. Attempt any three of the following:


a. Explain photoelectric effect. justify how this effect verifies the particle nature of light. 7
90

2
b. Illustrate Intrinsic and Extrinsic Semiconductor in detail. 7

13
c. Explain the small signal model of PN-Junction Diode 7
_2

2.
d. Describe stability factor and explain how it affect the transistor biasing. 7
P2

24
e. Explain the C-V Characteristic of MOS Transistor. 7
4D

5.
SECTION C

.5
P2

3. Attempt any one part of the following:


17
a. Discuss Application of Schrödinger wave equation for infinite Potential well and 7
Q

|1

discuss the effect of various in relation to the energy of the particle.


b. Illustrate the concept of allowed and forbidden energy bands in a single crystal both 7
4

qualitatively and more rigorously from the results of using the Kronig–Penney model.
2

4. Attempt any one part of the following:


9:
:2

a. Define the term Doping. Explain the effect of Impurity on energy band gap Diagram 7
in detail.
13

b. Using the concept of drift and diffusion of carriers, derive the continuity equation. 7
4

5. Attempt any one part of the following:


02

a. Describe the importance of Einstein relation and prove the relation. 7


-2

b. Derive the relation of voltage and current for PN junction diode. 7


03

6. Attempt any one part of the following:


1-

a. Explain Ebers-Moll model for PNP transistor. 7


|2

b. Name the different biasing schemes used transistor biasing. Explain voltage divider 7
biasing in detail.
7. Attempt any one part of the following:
a. Explain various biasing schemes for JFET. 7
b. Explain Enhancement P channel MOSFET in detail. Draw and elaborate the drain 7
Characteristic

1|Page
QP24DP2_290 | 21-03-2024 13:29:24 | 117.55.242.132

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