BUX81

MECHANICAL DATA
Dimensions in mm (inches) HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
TRANSISTOR
10.67 (0.42)
11.18 (0.44) 1.52 (0.06)
3.43 (0.135)
0.97 (0.060)
1.10 (0.043)
38.61 (1.52)
39.12 (1.54)

(0.875)
22.23

max.

Applications
29.9 (1.177)
30.4 (1.197)

16.64 (0.655)
17.15 (0.675)

1 2
The BUX81 is an epitaxial silicon NPN planar transistor that
3
has high current and high power handling capability and
(case)
high switching speed.
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
This device is especially suitable for switching–control
12.70 (0.50)
amplifiers, power gates, switching regulators, power-switch-
ing circuits converters, inverters and control circuits.Other
recommended applications include DC–RF amplifiers and
power oscillators.

TO–204AA (TO–3)
PIN 1 — Base PIN 2 — Emitter Case is Collector.

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise stated)

VCESM Collector – Emitter Voltage VBE = 0 1000V
VCER Collector – Emitter Voltage RBE = 100Ω 500V
VCEO Collector – Emitter Voltage(open base) 450V
IC Collector Current (d.c) 10A
ICM Peak Collector Current tp = 2ms 15A
IB Base Current (d.c) 4A
Ptot Total Power Dissipation Tmb = 50°C 150W
TSTG Storage Temperature Range -65 to +200°C
TJ Maximum Junction Temperature +200°C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 5865
E-mail: [email protected] Website: http://www.semelab.co.uk Issue 1
 BUX81

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)

Parameter Test Conditions Min. Typ. Max. Unit
Collector - Emitter Breakdown IC = 100mA
V(BR)CEO 450 V
Voltage IB = 0
Collector - Emitter Breakdown IC = 100mA RBE = 50Ω
V(BR)CER 500 V
Voltage IB = 0
Collector – Emitter IC = 5A IB = 1.0A 1.5
VCE(sat)*
Saturation Voltage IC = 8A IB = 2.5A 3.0
V
Base – Emitter IC = 5A IB = 1.0A 1.4
VBE(sat)*
Saturation Voltage IC = 8A IB = 2.5A 1.8
VCE = 1000V VBE = 0 1
ICES Collector Cut-off Current mA
TC = +125°C 3
IEBO Emitter Cut-off Current IC = 0 VEB = 10V 10 mA
fT Transition Frequency IC = 0.5A VCE = 10V 8 MHz
Cobo Output Capacitance f=100kHz IE = 0 VCB = 20V 105 pF
ton Turn–On Time IC = 5A VCC = 250V 0.5
ts Storage Time IB1 = 1A IB2 = -2A 3.5 µs
tf Fall Time 0.8

THERMAL CHARACTERISTICS
Rth j-mb Thermal Resistance Junction to Case 1.65 °C/W

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 5865
E-mail: [email protected] Website: http://www.semelab.co.uk Issue 1