ELECTRONICS 2

LAB 1

The Input
Characteristics of
The Transistors
By:
Abdulrahman Al-Aarag
Yousif Izz-Al-Din
Mustafa Al-Junaid
Ali Al-Sharafi

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 Experiment of:

The Input Characteristics of The

Transistors
Lab: 1

By:
Abdulrahman Al-Aarag | 202270269
Yousif Abdulmalik Izz Al-Din | 202370017
Mustafa Anwar Al-Junaid| 202370136
Ali Ameen Al-Sharafi | 202370194

Supervisor:
Sara Al-Kohlani

Department of Communication Engineering

University of Sana’a
29 Jul, 2024

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 ❖ Abstract

This experiment explores the input characteristics of NPN bipolar junction transistors (BJTs). By
examining the relationship between the base current (𝑰𝑩 ) and the base-emitter voltage (𝑽𝑩𝑬 ) at various
collector-emitter voltages (𝑽𝑪𝑬 ), we aim to understand the behavior of NPN transistors under different
operating conditions. The methodology involves systematic measurement and plotting of the 𝑰𝑩 -
𝑽𝑩𝑬 curves. The experimental data obtained in the lab are then compared with data and values derived
from the Multisim software to evaluate accuracy and identify any discrepancies caused by practical
factors. The results of this study enhance our understanding of NPN BJT performance, which is crucial
for the design and optimization of electronic circuits.

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 ❖ Table of Contents

❖ Abstract ........................................................................................................... 3
❖ Table of Contents............................................................................................. 4
❖ Table of figures ................................................................................................ 5
❖ Table of Tables................................................................................................. 5
❖ Table of abbreviations ..................................................................................... 5
1 Introduction ....................................................................................................... 6
1.1 Background .................................................................................................................................................6
1.2 Objective ....................................................................................................................................................6
2 Input Characteristics ........................................................................................... 6
3 Equipment ......................................................................................................... 7
4 Procedures ......................................................................................................... 7
5 Circuit Diagram ................................................................................................... 8
6 The Relationship Between VBE and IB.................................................................... 8
7 Diagram the Relationship Between VBE and IB.................................................... 9
8 The Relation Between IB and IC Current .............................................................. 9
9 The Relation Between IB and IC Current .............................................................10
10 Conclusion ........................................................................................................10

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 ❖ Table of figures

Figure 1: (PNP & NPN BJT Transistors) ....................................................................................................... 6

Figure 2: (Input Characteristics) ................................................................................................................. 6
Figure 3: (The Experiment’s Circuit in Lab) ................................................................................................. 7
Figure 4: (Circuit 1 Measuring VBE & IB) .................................................................................................... 8
Figure 5: (Circuit 2 Measuring IB & IC) ....................................................................................................... 8
Figure 6: (The Relationship Between VBE & IB) ......................................................................................... 9
Figure 7: (The Relationship Between IB & IC) ........................................................................................... 10

❖ Table of Tables

Table 1: (The relationship between VBE & IB) ........................................................................................... 8

Table 2: (The Relationship between IB & IC) .............................................................................................. 9

❖ Table of abbreviations

1. NPN: Negative-Positive-Negative.
2. PNP: Positive-Negative-Positive.
3. BJT: Bipolar Junction Transistor.
4. 𝑰𝑩 : The current base of a transistor.
5. 𝑹𝑪𝑬 : The resistance between collector and emitter of a transistor.
6. 𝑰𝑪 : current collector of a transistor.
7. BD137: It is a specific model number for an NPN Bipolar Junction Transistor (BJT). It does not
stand for an abbreviation but rather is a part number designation used by manufacturers.
8. 𝑽𝑩𝑬 : The Voltage between base and emitter.

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1 Introduction
1.1 Background
A transistor is a semiconductor device with two junctions and three terminals, encompassing three
distinct regions: the emitter, the base, and the collector. Transistors come in two varieties: the NPN
transistor, featuring an n-type emitter, a p-type base, and an n-type collector, and the PNP transistor,
which has a p-type emitter, an n-type base, and a p-type collector. The emitter region is heavily doped,
the base region is thin and lightly doped, and the collector region is moderately doped and is the largest
of the three. Current conduction in transistors involves both electrons and holes, leading to their
classification as Bipolar Junction Transistors (BJT).

Figure 1: (PNP & NPN BJT Transistors)

1.2 Objective
The objective of this experiment is to study the characteristics and functioning of an NPN Bipolar
Junction Transistor (BJT). We will analyze the performance of the NPN transistor by measuring base
current in relation to the base voltage, at constant collector voltage.

2 Input Characteristics

Here are some input characteristics of the NPN (𝑚𝐴)

𝑰𝑪 (Switch on)
Bipolar Junction Transistor (BJT): 𝐼𝐵 = 𝐼𝐵(𝑠𝑎𝑡) ,
Saturation 𝐼𝐶 = 𝐼𝐶(𝑠𝑎𝑡)

• The base acts as a closed gate that

prevents current from flowing from the Linear
Active
emitter to the collector or vice versa. 𝐵 𝐼 = 𝐼 (𝑎𝑐𝑡𝑖𝑣𝑒),
𝐵

• The transistor can be considered a variable 𝐶 𝐼 = 𝛽𝐼

𝐵

resistor between the emitter and

(Switch off) Cut off 𝑰𝑩
collector, with this resistance changing
𝐼 = 0,
based on the base current (𝑰𝑩 ). 𝐼 =0
𝐵
𝐶
Figure 2: (Input Characteristics)
• If the base current is zero, the resistance
between the emitter and collector (𝑹𝑪𝑬 ) is very high, preventing current flow. As the base current (𝐼𝐵 )
increases, the resistance decreases, leading to an increase in the collector current (𝑰𝑪 ).

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 • The voltage required between the base and emitter to forward-bias the base-emitter junction, typically
around 0.7V for silicon BJTs.
• The ratio of the collector current (𝐼𝐶 ) to the base current (𝐼𝑩 ) indicates how much the transistor amplifies
the input current.
• When the transistor is in saturation, the base-emitter junction and base-collector junction are both
forward-biased, resulting in minimal voltage drop between the collector and emitter.
• In active region, the base-emitter junction is forward-biased while the base-collector junction is reverse-
biased, allowing for amplification of the input signal.

3 Equipment

• A DC Power Supply or 15V battery.

• Two multimeters (one for measuring the Voltage and the other for Current).
• Transistor of BD137, Resistor of 1KΩ & 47KΩ, and a VARIBLE Resistor OF 47KΩ.

Figure 3: (The Experiment’s Circuit in Lab)

4 Procedures

o Connect the circuit as illustrated in Figure 4 of the circuit diagram.

o Adjust the voltage 𝑉𝑪𝑬 to 15V, then vary 𝑉𝑩𝑬 using the variable resistor and measure the
base current (𝐼𝑩).
o Record the displayed values from both multimeters.
o Create a graph to illustrate the relationship between 𝐼𝑩 and 𝑉𝑩𝑬 .
o To understand the relationship between 𝐼𝑩 and 𝐼𝑪, set up the circuit as depicted in Figure
5.

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5 Circuit Diagram

Figure 4: (Circuit 1 Measuring VBE & IB)

Figure 5: (Circuit 2 Measuring IB & IC)

6 The Relationship Between 𝑉𝑩𝑬 and 𝐼𝐵

Key Ω 𝑽𝑩𝑬 𝑰𝑩
100% 0.1 0
98% 0.2 0
96% 0.3 0
94% 0.4 0
93% 0.5 0
90% 0.6 0
75% 0.67 0.1
0% 0.68 0.3

Table 1: (The relationship between VBE & IB)

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7 Diagram the Relationship Between 𝑉𝑩𝑬 and 𝐼𝐵

The Relationship Between VBE & IB

0.35
0.3
0.3
0.25
0.2
0.15
𝐼B (mA)

0.1
0.1 0.07

0.05
0 0 0 0 0 0
0
0 0.2 0.4 0.6 0.8
-0.05
-0.1
V𝐵E (V)

Figure 6: (The Relationship Between VBE & IB)

8 The Relationship Between 𝐼𝐵 and 𝐼𝐶 Current

𝑰𝑩 (𝑚𝐴) 𝑰𝑪 (𝑚𝐴)
0.0 12
0.1 12.9
0.12 14
0.13 14.85
0.2 14.9
0.25 14.92
0.29 14.92

Table 2: (The Relationship between IB & IC)

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9 The Relationship Between 𝐼𝐵 and 𝐼𝐶 Current

The Relationship Between 𝐼𝐵 & 𝐼C in (𝒎𝑨)

0.35
0.3
0.3
0.25
0.2
𝐼C (𝒎𝑨)

0.15
0.1
0.1 0.07

0.05
0 0 0 0 0 0
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
-0.05
-0.1
𝐼𝐵 (𝒎𝑨)

Figure 7: (The Relationship Between IB & IC)

10 Conclusion

In summary, we have determined that the base current (𝐼𝑩) acts as the controlling current, regulating
the amount of current flowing from the collector to the emitter. Additionally, we examined the
relationship between the base-emitter voltage (𝑉𝑩𝑬 ) and the base current (𝐼𝑩 ), noting that the base
current begins to flow when the 𝑉𝑩𝑬 exceeds 0.6V. Lastly, we observed that the collector current (𝐼𝑪)
increases with an increase in the base current (𝐼𝑩) and eventually reaches a linear relationship at a certain
point.

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