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Phy 13

Theorems

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12 views

Phy 13

Theorems

Uploaded by

vidhya29594
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Transistors and Its Types

By
C.Ravi
Asst Professor
Department of Physics
Vivekanandha College of arts And Sciences for
Women ( Autonomous)
Lecture Overview
• What is a Transistor?
• History
• Types
• Characteristics
• Applications
What is a Transistor?
• Semiconductors: ability to change
from conductor to insulator
• Can either allow current or prohibit
current to flow
• Useful as a switch, but also as an
amplifier
• Essential part of many technological
advances
A Brief History

• Guglielmo Marconi invents radio in 1895


• Problem: For long distance travel, signal must
be amplified
• Lee De Forest improves on Fleming’s original
vacuum tube to amplify signals
• Made use of third electrode
• Too bulky for most applications
The Transistor is Born
• Bell Labs (1947): Bardeen,
Brattain, and Shockley
• Originally made of germanium
• Current transistors made of
doped silicon
How Transistors Work
• Doping: adding small amounts of other
elements to create additional protons or
electrons
• P-Type: dopants lack a fourth valence electron
(Boron, Aluminum)
• N-Type: dopants have an additional (5th)
valence electron (Phosphorus, Arsenic)
• Importance: Current only flows from P to N
Diodes and Bias
• Diode: simple P-N junction.
• Forward Bias: allows current to
flow from P to N.
• Reverse Bias: no current allowed
to flow from N to P.
• Breakdown Voltage: sufficient N
to P voltage of a Zener Diode will
allow for current to flow in this
direction.
Bipolar Junction Transistor (BJT)
• 3 adjacent regions of doped Si
(each connected to a lead):
– Base. (thin layer,less doped).
– Collector.
– Emitter.
• 2 types of BJT: npn bipolar junction transistor

– npn.
– pnp.
• Most common: npn (focus on
it).

Developed by
pnp bipolar junction transistor
Shockley (1949)
BJT NPN Transistor
• 1 thin layer of p-type, sandwiched between 2 layers of n-type.
• N-type of emitter: more heavily doped than collector.
• With VC>VB>VE:
– Base-Emitter junction forward biased, Base-Collector reverse biased.
– Electrons diffuse from Emitter to Base (from n to p).
– There’s a depletion layer on the Base-Collector junction no flow of e-
allowed.
– BUT the Base is thin and Emitter region is n+ (heavily doped)  electrons
have enough momentum to cross the Base into the Collector.
– The small base current IB controls a large current IC
BJT characteristics
• Current Gain:
– α is the fraction of electrons that
diffuse across the narrow Base
region
– 1- α is the fraction of electrons
that recombine with holes in the
I C  I E
Base region to create base
current I B  (1   ) I E
• The current Gain is expressed in
IC 

terms of the β (beta) of the
transistor (often called hfe by 
manufacturers). IB 1
• β (beta) is Temperature and
Voltage dependent.
• It can vary a lot among transistors
(common values for signal BJT: 20
- 200).
NPN Common Emitter circuit
• Emitter is grounded.
• Base-Emitter starts to conduct with VBE=0.6V,IC flows and it’s IC=IB.
• Increasing IB, VBE slowly increases to 0.7V but IC rises exponentially.
• As IC rises ,voltage drop across RC increases and VCE drops toward ground.
(transistor in saturation, no more linear relation between IC and IB)
Common Emitter characteristics

Collector current Collector current


The avalanche
controlled by the proportional to
multiplication of
collector circuit. Base current
current through
(Switch behavior)
collector junction
In full saturation occurs: to be
VCE=0.2V. avoided

No current flows
Operation region summary

Operation IB or VCE BC and BE Mode


Region Char. Junctions
Cutoff IB = Very Reverse & Open
small Reverse Switch
Saturation VCE = Small Forward & Closed
Forward Switch
Active VCE = Reverse & Linear
Linear Moderate Forward Amplifier
Break- VCE = Large Beyond Overload
down Limits
BJT as Switch
•Vin(Low ) < 0.7 V
•BE junction not forward
biased
•Cutoff region
•No current flows
•Vout = VCE = Vcc
•Vout = High
•Vin(High)
•BE junction forward biased (VBE=0.7V)
•Saturation region
•VCE small (~0.2 V for saturated BJT)
•Vout = small
•IB = (Vin-VB)/RB
BJT as Switch 2
• Basis of digital logic circuits
• Input to transistor gate can be analog or digital
• Building blocks for TTL – Transistor Transistor Logic
• Guidelines for designing a transistor switch:
– VC>VB>VE
– VBE= 0.7 V
– IC independent from IB (in saturation).
– Min. IB estimated from by (IBminIC/).
– Input resistance such that IB > 5-10 times IBmin because  varies
among components, with temperature and voltage and RB may
change when current flows.
– Calculate the max IC and IB not to overcome device specifications.
BJT as Amplifier

•Common emitter mode


•Linear Active Region
•Significant current Gain
Example:
•Let Gain,  = 100

•Assume to be in active
region -> VBE=0.7V

•Find if it’s in active


region
BJT as Amplifier

VBE  0.7V
I E  I B  I C  (   1) I B
VBB  VBE 5  0.7
IB    0.0107mA
RB  RE *101 402
I C   * I B  100 * 0.0107  1.07mA
VCB  VCC  I C * RC  I E * RE  VBE 
 10  (3)(1.07)  (2)(101* 0.0107)  0.7 
 3.93V

VCB>0 so the BJT is in


active region

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