NCE7560K

http://www.ncepower.com Pb-Free Product

NCE N-Channel Enhancement Mode Power MOSFET

General Description Product Summary
The NCE7560K uses advanced trench technology and BVDSS typ. 84 V
design to provide excellent RDS(ON) with low gate RDS(ON) typ. 6.8 mΩ
charge. It can be used in a wide variety of applications. max. 8.5 mΩ

ID 60 A

Features
● VDS=75V；ID=60A@ VGS=10V； 100% UIS TESTED!
RDS(ON)<8.5mΩ @ VGS=10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard Switched and High Frequency Circuits TO-252-2L top view Schematic diagram
● Uninterruptible Power Supply

Package Marking and Ordering Information

Device Marking Device Device Package Reel Size Tape width Quantity
NCE7560K NCE7560K TO-252-2L - - -

Table 1. Absolute Maximum Ratings (TC=25℃)

Parameter Symbol Value Unit
Drain-Source Voltage (VGS=0V） VDS 75 V
Gate-Source Voltage (VDS=0V) VGS ±20 V
Drain Current (DC) at Tc=25℃ ID (DC) 60 A
Drain Current (DC) at Tc=100℃ ID (DC) 42 A
(Note 1)
Drain Current-Continuous@ Current-Pulsed IDM (pluse) 310 A
Peak diode recovery voltage dv/dt 30 V/ns
Maximum Power Dissipation(Tc=25℃) PD 140 W
Derating factor 0.95 W/℃
(Note 2)
Single pulse avalanche energy EAS 300 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition：Tj=25℃,VDD=37.5V,VG=10V,L=0.5mH

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Table 2. Thermal Characteristic

Parameter Symbol Value Unit
Thermal Resistance，Junction-to-Case（Maximum） RthJC 1.05 ℃/W
Thermal Resistance，Junction-to-Ambient （Maximum） RthJA 50 ℃/W

Table 3. Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 75 84 - V
Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=75V,VGS=0V - - 1 μA
Zero Gate Voltage Drain Current(Tc=125℃) IDSS VDS=75V,VGS=0V - - 10 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A - 6.8 8.5 mΩ
Dynamic Characteristics
Forward Transconductance gFS VDS=5V,ID=30A 66 - S
Input Capacitance Clss 4400 - PF
VDS=25V,VGS=0V,
Output Capacitance Coss 340 - PF
F=1.0MHz
Reverse Transfer Capacitance Crss 260 - PF
Total Gate Charge Qg 100 - nC
VDS=30V,ID=30A,
Gate-Source Charge Qgs 20 - nC
VGS=10V
Gate-Drain Charge Qgd 30 - nC
Switching times
Turn-on Delay Time td(on) - 17.8 - nS
Turn-on Rise Time tr VDD=30V,ID=2A,RL=15Ω - 11.8 - nS
Turn-Off Delay Time td(off) VGS=10V,RG=2.5Ω - 56 - nS
Turn-Off Fall Time tf - 14.6 - nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode) ISD - - 80 A
Pulsed Source-drain current(Body Diode) ISDM - - 320 A
(Note 1)
Forward on voltage VSD Tj=25℃,ISD=30A,VGS=0V - - 1.2 V
(Note 1)
Reverse Recovery Time trr - - 36 nS
(Note 1)
Tj=25℃,IF=75A,di/dt=100A/μs
Reverse Recovery Charge Qrr - - 56 nC
Forward Turn-on Time ton Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)

Notes
1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting Tj=25℃

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Test Circuit
1) EAS test circuit

2) Gate charge test circuit

3) Switch Time Test Circuit

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Typical Electrical and Thermal Characteristics (curves)

Figure1. Safe operating area Figure2. Source-Drain Diode Forward Voltage

Figure3. Output characteristics Figure4. Transfer characteristics

Figure5. Static drain-source on resistance Figure6. RDS(ON) vs Junction Temperature

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Figure7. BVDSS vs Junction Temperature Figure8. VGS(th) vs Junction Temperature

Figure9. Gate charge waveforms Figure10. Capacitance

Figure11. Normalized Maximum Transient Thermal Impedance

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TO-252 Package Information

Symbol Dimensions In Millimeters Dimensions In Inches

Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 TYP. 0.190 TYP.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 TYP. 0.114 TYP.
L2 1.400 1.700 0.055 0.067
L3 1.600 TYP. 0.063 TYP.
L4 0.600 1.000 0.024 0.039
Φ 1.100 1.300 0.043 0.051
θ 0° 8° 0° 8°
h 0.000 0.300 0.000 0.012
V 5.350 TYP. 0.211 TYP.

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Attention

■ Any and all NCE products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure
can be reasonably expected to result in serious physical and/or material damage. Consult with your
NCE representative nearest you before using any NCE products described or contained herein in such applications.
■ NCE assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all NCE products described or contained herein.
■ Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
■ NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
■ In the event that any or all NCE products(including technical data, services) described or contained herein are controlled
under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
export license from the authorities concerned in accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE Power Semiconductor CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its
use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product
that you intend to use.
■ This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.

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