Be Max77752betl T
Be Max77752betl T
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Information
TQFN
PACKAGE CODE T4055+1C
Outline Number 21-0140
Land Pattern Number 90-0016
Thermal Resistance, Single-Layer Board:
Junction to Ambient (θJA) 45°C/W
Junction to Case (θJC) 2°C/W
Thermal Resistance, Four-Layer Board:
Junction to Ambient (θJA) 28°C/W
Junction to Case (θJC) 2°C/W
For the latest package outline information and land patterns (footprints), go to www.maximintegrated.com/packages. Note that a “+”,
“#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board.
For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Pulled up to VIN_VIO,
LP_REQ Pullup Resistance RPU_LP_REQ 50 100 170 kΩ
OTP_INT_PU[0] = 0b1
EREG_ENx OUTPUT (OPEN DRAIN)
EREG_EN1 Output-Voltage
VOL ISINK = 2mA 0.4 V
Low
EREG_EN2 Output-Voltage
VOL ISINK = 10mA 0.4 V
Low
VSYS = VEREG_ENx = 5.5V, TA = +25°C,
0.001 1
EREG_ENx Open OTP_INT_PU[0] = 0b0
μA
Leakage Current VSYS = VEREG_ENx = 5.5V, TA = +85°C,
0.01
OTP_INT_PU[0] = 0b0
EREG_ENx Falling Edge CEREG_ENx = 25pF, VEREG_ENx = 1.8V
25 ns
Time ≥0
EREG_EN1 Pullup RPU_EREG_ Pulled up to VH_INT, OTP_INT_PU[0]
50 100 170 kΩ
Resistance ENx = 0b1
EREG_EN2 Pullup RPU_EREG_ Pulled up to VIN_VIO, OTP_INT_PU[0]
50 100 170 kΩ
Resistance ENx = 0b1
EREG_POK INPUT
I/O Pad Operating Voltage VSYS 2.6 5.5 V
Input Low Voltage VIL 0.4 V
Input High Voltage VIH 1.4 V
Input Hysteresis VHYS 50 mV
Note 4: The LP_MODE debounce period has a variation due to the variability associated with quantizing an asynchronous input sig-
nal. Additionally, while measuring the period from a valid LP_MODE edge to a subsequent event, such as LP_REQ asser-
tion, there is one more clock cycle (CLK32K) of delay observed in a real system.
VIN_DRV-VINR_OUT = VIN_SNS
(steady state), tSS_DONE expired, 26
Supply Current (Steady- fGDRV = 12.5kHz, VIN_SNS = 3.3V
IIN µA
State) VIN_DRV-VINR_OUT = VIN_SNS
(steady state), tSS_DONE expired, 37
fGDRV = 12.5kHz, VIN_SNS = 5V
OTP_INR_FREQ[2:0] = 0b101
1x Gate Drive Oscillator
fGDRV_1X (nominal gate drive strength), 120 180 240 kHz
Frequency
VIN = 3.3V, VIN = 5V
IOUT = IOUT_MAX_BUCKx,
VOUT = 1.0V, L = 1μH,
Maximum Load Efficiency EFFIOUT_MAX 70 %
DCRL = 50mΩ, COUT = 22μF
(Note 5)
Normal-power mode.
Output Brownout
VOUT_BUCKx = 1.0V -4.0 +4.0 %
Accuracy
(VOUT_BUCKx[7:0] = 0 x 40)
Normal-power mode,
13.4
BUCKx_BO_PR[1:0] = 0b00 (fast)
Normal-power mode,
10.4
IQNM_BO_ BUCKx_BO_PR[1:0] = 0b01 (med-fast)
Output Brownout Supply BUCKx Normal-power mode,
7.4 µA
Current BUCKx_BO_PR[1:0] = 0b10 (med-slow)
Normal-power mode,
4.4
BUCKx_BO_PR[1:0] = 0b11 (slow)
IQLPM_BO_
Low-power mode 1.3
BUCKx
Output Over-Voltage
IQ_OV_BUCKx Normal-power mode 4.4 µA
Supply current
Output Brownout
Threshold VBO_BUCKx Falling threshold, low-power mode 86.0 %
(Low-Power Mode)
Output Brownout
VBO_HYS_
Hysteresis 5 %
(Low-Power Mode) BUCKx_LPM
Output Over-Voltage
IQ_OV_BUCKx Buck in normal-power mode 4.4 µA
Supply current
Buck in low-power mode, 100mV over-drive
Output Over-Voltage
with rising slew rate of 150mV/μs. Time
Response Time tOV_BUCKx 3.18 μs
from VOUT_BUCKx rising to PGOOD pin
(Low-Power Mode)
falling (Note 10)
Output Over-Voltage
Supply current IQ_OV_BUCK3 Buck in low-power mode 1.3 µA
(Low-Power Mode)
POWER-OK COMPARATOR
Output Power-OK
3 %
Hysteresis
Output Power-OK
3 %
Hysteresis
VSYS = 3.3V, VINLSWx = 1.8V, LSWx is
Power-OK Response
enabled, 100mV under-drive with falling 1.20 μs
Time
slew rate of 150mV/μs
Power-OK Comparator VSYS = 3.3V, VINLSWx = 1.8V, LSWx is
IQ_POK_LSWx 1.1 μA
Active Current enabled
DYNAMIC CHARACTERISTICS
Output Over-Shoot
50 mV
During Startup
TIMING CHARACTERISTICS
Maximum Turn-On From the LDO receiving an enable signal to
20 μs
Delay when the output voltage starts to rise
Maximum Soft-Start VOUT_LDO from 10% to 90% of 2.5V final
40 μs
Time value
POWER-OK COMPARATOR
Output Power-OK
Rising edge, VOUT_LDO = 2.0V 82.5 87.5 92.5 %
Trim Level
Output Power-OK
VOUT_LDO = 2.0V 3 %
Hysteresis
Note 11: When the input voltage is within the specified range, the LDO tries to regulate the output voltage. However, the regulator
may be in dropout. For example, if the output voltage is fixed at 1.85V and a 1.7V input is provided, the output is 1.7V
minus the dropout voltage (VLDO = VIN_LDO-VLDO_DO). To achieve the specified output voltage, the input voltage must
be the output voltage plus the dropout voltage (VIN_LDO ≥ VLDO + VLDO_DO_MAX).
Note 12: VIN_LDO must be lower than or equal to VSYS. The VSYS maximum operating voltage range is 5.5V. For example, if
VSYS is 4.2V, then the maximum voltage for VIN_LDO is 4.2V. Similarly, if VSYS is 5.5V, then the maximum voltage for
VIN_LDO is 5.5V.
Note 13: The dropout voltage is the difference between the input voltage and the output voltage, when the input voltage is inside
the specified "input voltage" range but below the "output voltage" set point. For example, if the output voltage set point
is 1.85V, the input voltage is 1.7V, and the actual output voltage is 1.65V, then the dropout voltage is 50mV (VLDO_DO =
VIN_LDO-VOUT_LDO).
Note 14: The "Maximum Output Current" is guaranteed by the "Output Voltage Accuracy" tests.
Note 15: Current limit is provided for thermal concerns as a system fail safe feature, minor (50mA) oscillations of current when the
LDO is at current limit are normal. Over process corner current limit is not expected to exceed 560mA.
Note 16: There is an n-channel MOSFET in series with the output active discharge resistance. This NMOS requires VSYS > 1.2V
to be enhanced.
Note 17: Guaranteed by design and characterization but not directly production tested. The ability to disconnect the active dis-
charge resistance is functionally checked in a production test.
0.3 x
SCL, SDA Input LOW Voltage VIL VIN_VIO_I2C = 1.7V to 3.6V VIN_
VIO_I2C
0.1 x
SCL, SDA Input Hysteresis VHYS VIN_ V
VIO_I2C
Note 18: Minimum typical and maximum values are guaranteed by design. Not production tested.
Pin Configuration
LSW_DRV1
LSW_DRV2
FBLSW2
TOP VIEW
PGND3
PGND3
FBB3
INB3
INB3
LX3
LX3
30 29 28 27 26 25 24 23 22 21
FBLSW1 31 20 DGND
FBB2 32 19 BLD_IO
INB2 33 18 GND
LX2 34 17 EREG_EN2
PGND1 36 15 LP_ACK
LX1 37 14 EREG_POK
INB1 38 13 RESET_L
+
FBB1 39 12 LP_REQ
SDA 40 11 INR_OUT
1 2 3 4 5 6 7 8 9 10
SCL
IN_LDO
OUT_LDO
SYS
IN_PHUP
PGOOD
EREG_EN1
WP_L
INR_DRV
TQFN IN_SNS
5mm x 5mm
Pin Description
PIN NAME FUNCTION TYPE
TOP
External Inrush FET Gate Drive. Inrush MOSFET Gate Driver. When using the
inrush control feature, connect INR_DRV to the gate of an external NMOS.
If the inrush feature is not required, this pin can also be configured as LSW3_DRV Analog
9 INR_DRV
using LSW_OTP_SEL = 1. If either use cases do not apply, leave INR_DRV Output
unconnected or connect to ground ONLY after ensuring that the inrush controller is
disabled by the appropriate OTP option.
Input Voltage Sense (Preswitch). Input Voltage Sense. When using the inrush control
Power
10 IN_SNS feature, connect IN_SNS to the drain of an external n-channel MOSFET. When the
Input
inrush control feature is not needed, connect IN_SNS to VSYS.
Inrush Control Output Sense. This pin must be connected to the source of the inrush control
MOSFET. If the inrush controller is not required, this pin can also be configured as FBLSW3 Power
11 INR_OUT
by setting LSW_OTP_SEL = 1. If either use cases do not apply, then this pin must be con- Input
nected to the SYS node.
System Power Input. SYS is the voltage sense input for the inrush controller, system
voltage monitors, and other analog circuits. Connect SYS to the same power source as that
meant for the voltage regulators in the PMIC.
When using the inrush control feature, connect SYS to the source of an external Power
4 SYS
n-channel MOSFET whose drain is connected to the main power input. When the Input
inrush control feature is not needed, connect SYS to IN_SNS.
Regardless of the inrush controller configuration, SYS must connect to the buck regulator
power inputs (INB1, INB2, INB3).
Write Protect (Open Drain, Active Low) to memory. Connect this pin to the appropriate pin on
Digital
8 WP_L the memory. An optional 100kΩ internal pullup resistor is available which is pulled up to an
Output
internal VIN_VIO node.
Power Good Output (Open Drain, Active High). PGOOD indicates the status of all
regulators controlled by the PMIC (internal and external) and asserts LOW if any
regulator's individual Power-OK (POK) signal is deasserted. Additionally, it also asserts Digital
6 PGOOD
low if the system voltage (VSYS) falls below the brownout threshold. Output
Connect PGOOD to the appropriate pin on the controller. An optional 100kΩ internal
pullup resistor is available which is pulled up to an internal node.
Low-Power Mode Input to PMIC from Connector in Master Mode (OTP_SLP_MSTRSLV = 0).
When in slave mode (OTP_SLP_MSTRSLV = 1), it is recommended to connect LP_MODE
Digital
16 LP_MODE to ground or to a power supply such that it is logic high.
Input
Open-Drain Output. An optional 100kΩ internal pullup resistor is available which is pulled up
to an internal node.
IN_PHUP is a Dedicated Analog Input Pin. This pin is connected to the output of the power
Power
5 IN_PHUP holdup IC. In case of a power-fail event, the voltage on this pin drives the internal logic block
Input
to sustain the holdup function by maintaining the logic levels of the appropriate pins.
LDO
Input Power for LDO (150mA). Bypass with a 2.2µF ceramic capacitor to GND with the
following parasitic constraints (including capacitor and PCB parasitics) of ESR<100mΩ and
Power
2 IN_LDO ESL<30nH.
Input
If the LDO is not used, it is recommended to connect IN_LDO to OUT_LDO and connect
them to ground.
150mA PMOS LDO Output. Bypass with a 2.2µF capacitor to GND. Power
3 OUT_LDO
If the LDO is not used, it is recommended to either ground OUT_LDO or leave it unconnected. output
BUCK
BUCK1 Power Input. INB1 is the shared drain connection of BUCK1's main power FET.
Power
38 INB1 Connect both INB1 pins together and to the power input to the system. INB1 is a critical
Input
discontinuous current node that requires careful PCB layout.
BUCK1 Power Ground are Internally Combined. PGND1 is the source connection of
36 PGND1 BUCK1's synchronous rectifier. PGND1 is a critical discontinuous current node that requires Ground
careful PCB layout.
BUCK2 Power Input. INB2 is the shared drain connection of BUCK2's main power FET.
Power
33 INB2 Connect both INB2 pins together and to the power input to the system. INB2 is a critical
Input
discontinuous current node that requires careful PCB layout.
BUCK2 Power Ground are Internally Combined. PGND2 is the source connection of
35 PGND2 BUCK2's synchronous rectifier. PGND2 is a critical discontinuous current node that Ground
requires careful PCB layout.
BUCK3 Power Input. INB3 is the drain connection of BUCK3's main power FET. Connect to
Power
26,27 INB3 the power input to the system. INB3 is a critical discontinuous current node that requires
Input
careful PCB layout.
BUCK3 Power Ground. PGND2 is the shared source connection of BUCK3's synchronous
22, 23 PGND3 rectifier. Connect both PGND3 pins together. PGND3 is a critical discontinuous current Ground
node that requires careful PCB layout.
I2C
Gate Drive for Load Switch 1. Connect to the gate of an external n-channel MOSFET
Analog
30 LSW_DRV1 used as the load switch.
Output
If the load switch is not used, LSW_DRV1 must be left unconnected.
Gate Drive for LSW2. Connect to the gate of an external n-channel MOSFET used
Analog
28 LSW_DRV2 as the load switch.
Output
If the load switch is not used, LSW_DRV2 must be left unconnected.
Feedback Input for Load-Switch Controller 1. FBLSW1 is an analog input to the load-switch
controller which is used to control soft-start of the load switch and is the input to the output
Analog
31 FBLSW1 voltage monitor.
Input
Connect FBLSW1 to the output (source-side of n-channel MOSFET) of the load switch.
If the load switch is not used, FBLSW1 can be left unconnected or tied to ground.
Feedback Input for Load-Switch Controller 2. FBLSW2 is an analog input to the load-switch
controller which is used to control soft-start of the load switch and is the input to the output
Analog
29 FBLSW2 voltage monitor.
Input
Connect FBLSW2 to the output (source-side of n-channel MOSFET) of the load switch.
If the load switch is not used, FBLSW2 can be left unconnected or tied to ground.
Detailed Description— 2) Check the values of CID0, CID1, CID2, CID3, and
CID4. Consider reporting these values if the product
Software Recommendations has some form of serial number checking utility. If the
Advice for optimizing software is provided throughout this SBT bits do not read an appropriate value, then flag
data sheet within the context of the hardware descrip- the product as bad and do not ship it. Only values
tions. This section is dedicated to software recommen- of 0b011 and 0b101 should be shipped as production
dations and provides system level software guidance in units. If the DRV bits do not match with what was in-
order to optimally utilize the features of this device. tended for the given product, then flag that product as
OFF to ON Software Initialization bad and do not ship it. This device has many OTP op-
tions and the DRV bits are set differently for each set
The system processor typically runs a set of initialization
of options. If parts got mixed up in the warehouse (i.e.,
code each time a transition from the OFF to the ON state
A version confused for C version), then this step helps
occurs, the reset output is deasserted (RESET_L = 1), catch that mistake.
and the PGOOD is asserted (PGOOD = 1).
3) Set/Clear the mask bits as deemed appropriate for the
The following are recommended software steps within this target platform.
initialization code:
1) Read the interrupt bits:
1) Interrupt bits set at this point in time can indicate an
issue that previously caused a shutdown.
20mΩ
3.3V
VIN VSYS
10µF
6.3V MAX77752
(0603)
SYS IN_B1 VSYS
INR_OUT
INRUSH 1.0µH
INR_DRV CONTROLLER BUCK1 LX1 VBUCK1
4.7µF 22µF
IN_SNS (2A) 6.3V 6.3V 22µF
PGND1 (0603) (0603) 6.3V
VIN IN_PHUP 0603
10µF FBB1
6.3V
IN_B2 VSYS
(0603) BLD_IO
1.0µH
AGND BUCK2 LX2 VBUCK2
4.7µF 22µF
(2A) 6.3V 6.3V 22µF
DGND
PGND2 (0603) (0603) 6.3V
0603
FBB2
SCL SCL
INB3 VSYS
SDA SDA
1.0µH
PG PGOOD BUCK3 LX3 VBUCK3
4.7µF 22µF
(3A) 6.3V 6.3V 22µF
NC WP_L PGND3 (0603) (0603) 6.3V
GLOBAL 0603
RESOURCES FBB3
RESET_L RESET_L AND
I2C IN_LDO VSYS
GPO GPO
LDO
OUT_LDO VOUT_LDO
(150mA) 2.2µF 2.2µF
EREG_EN1 EREG_EN1 6.3V 6.3V
(GPO) (0402) (0402)
VBUCKx
EREG_EN2 EREG_EN2
(GPO) LSW_DRV1
GND PGND
Ordering Information
PART NUMBER TEMP RANGE PIN-PACKAGE TOP MARKING CID4
MAX77752AETL+ -40°C to +85°C 40 TQFN MAX77752AETL+ 0x07
MAX77752BETL+ -40°C to +85°C 40 TQFN MAX77752BETL+ 0x0D
MAX77752CETL+ -40°C to +85°C 40 TQFN MAX77752CETL+ 0x14
MAX77752DETL+ -40°C to +85°C 40 TQFN MAX77752DETL+ 0x15
+Denotes a lead(Pb)-free/RoHS-compliant package.
For a copy of the register map and for further questions, contact [email protected].
Revision History
REVISION REVISION PAGES
DESCRIPTION
NUMBER DATE CHANGED
0 12/17 Initial release —
Added conditions statement to the Electrical Characteristics—Current Sense Amplifier
1 1/18 14
table
Removed SSD and NAND from Pin Description table, added new part variant to
2 1/18 38, 42
Ordering Information table
3 7/18 Updated Ordering Information table 42
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim Integrated’s website at www.maximintegrated.com.
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses
are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits)
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc. © 2018 Maxim Integrated Products, Inc. │ 43