SMT-01 Introduction
SMT-01 Introduction
Manufacturing Technology
Chapter 1
Introduction to the
Semiconductor Industry
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Objectives
After studying the material in this chapter, you will be able to:
R7
Photo courtesy of
Advanced Micro Devices
US$ 499
Wafer: round thin crystalline disk
Wafer fab: fabrication factories Photo courtesy of
Intel Corporation
Chip account for 30%-40% of cost PC
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Vacuum Tubes
INFRASTRUCTURE PRODUCT
APPLICATIONS
Industry Standards
(SIA, SEMI, NIST, etc.)
Consumers:
Production Tools • Computers
• Automotive
Utilities • Aerospace
Materials & Chemicals Chip • Medical
Manufacturer • other industries
Metrology Tools Customer Service
Analytical Laboratories Original Equipment Manufacturers
Technical Workforce Printed Circuit Board Industry
Colleges & Universities
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Jack Kilby’s First Integrated Circuit
The devices were connected with individual wires.
• A discrete device is
an electronic device,
such as a resistor,
capacitor, diode, or
transistor, that
contains only one
device per piece
• Kilby: it would be
possible make
discrete devices on
the same piece of
semiconductor (Ge).
• In this photo, it
contains Transistor: 1,
Resistor: 3, C:1
Photo courtesy of Texas Instruments, Inc.
Photo 1.4 11/45
The First Planar Transistor
(1957, Fairchild)
Planar Technology
Al Thermal SiO2
Dopant gas
The most
important
discovery
Diffused
Oxide region Oxide
p+ Silicon substrate
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Top View of Wafer with Chips
A single integrated
circuit, also known as a
die, chip, and microchip
Number of
Semiconductor
Circuit Integration Components per
Industry Time Period
Chip
No integration (discrete components) Prior to 1960 1
Small scale integration (SSI) Early 1960s 2 to 50
Medium scale integration (MSI) 1960s to Early 1970s 50 to 5,000
Early 1970s to Late
Large scale integration (LSI) 5,000 to 100,000
1970s
Late 1970s to Late
Very large scale integration (VLSI) 100,000 to 1,000,000
1980s
Ultra large scale integration (ULSI) 1990s to present > 1,000,000
The key to market success is the ability to deliver the right product at the right time.
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Advanced CPU
2020
5.1 GHz
16 MB
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$450.
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IC Fabrication
• Silicon
– Wafer
– Wafer Sizes (increase to reduce cost)
– Devices and Layers
• Wafer Fab (clean room to reduce
contaminations)
• Stages of IC Fabrication
– Wafer preparation
– Wafer fabrication
– Wafer test/sort
– Assembly and packaging
– Final test
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Evolution of Wafer Size
2000
1992
1987
1981
1975
1965
Metal layer
Recessed conductive
layer
Silicon substrate
Silicon substrate
Heater
7. Lapping
8. Wafer Etching
Polishing
Slurry head
9. Polishong
4. Flat Grinding
Polishing table
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Critical Dimension
Common IC Features
Contact Hole
CD
1.0 0.5 0.35 0.25 0.18 0.15 0.13 0.10
(m)
Manufacturable solutions exist, and are being optimized ITRS Reports .2013 edition
Manufacturable solutions are known Manufacturable solutions are NOT known
1200
1000
800
600
400
200
10M 500
Pentium Pro
Pentium
1M 80486 25
80386
100K 80286 1.0
8086
10K .1
8080
4004 .01
1975 1980 1985 1990 1995 2000
Year
Used with permission from Proceedings of the IEEE, January, 1998, © 1998 IEEE
1990s Microchip
(5~25 million transistors)
1960s Transistor
0
1997 1999 2001 2003 2006 2009 2012
Year
Redrawn from Semiconductor Industry Association,
National Technology Roadmap, 1997
Figure 1.13 35/45
Reliability Improvement of Chips
700
600
Long-Term Failure Rate Goals
in parts per million (PPM)
500
400
300
200
100
0
1972 1976 1980 1984 1988 1992 1996 2000
Year
chip over 20
10-2
LSI million
VLSI
• CD: from 0.35->
10-4
0.25 m, dies
ULSI
increase from
10-6
150-> 275.
10-8
10-10
1930 1940 1950 1960 1970 1980 1990 2000
Year
Redrawn from C. Chang & S. Sze, McGraw-Hill, ULSI Technology, (New York: McGraw-Hill, 1996), xxiii.
Figure 1.15 37/45
The Electronic Era
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Start-Up Cost of Wafer Fabs
$100,000,000,000
Actual Costs
Projected Costs
$10,000,000,000
Cost
$1,000,000,000
$100,000,000
$10,000,000
1970 1980 1990 2000 2010 2020
Year
Used with permission from Proceedings of IEEE, January, 1998 © 1998 IEEE
Fab Manager
HS +
Wafer Fab Technician
* Bachelor of Science in
Electronics Technology
Production Operator HS
Education
Figure 1.17 40/45
Productivity Measurements in a Wafer Fab
Misprocessing
Wafer Starts
Wafer Moves
Wafer Outs
1 2 3 4
5 6 7 8 9 10 11 1
12 13 14 15 16 17 18 2 3 4 5 6 7 8
19 20 21 22 23 24 25 9 10 11 12 13 14 15
26 27 28 29 30 31 16 17 18 19 20 21 22
23 24 25 26 27 28 29
Production Inspection Inspection
Production Inspection Production 30 31
Equipment Equipment
Equipment
Production Cycle Time = (Date and Time of Wafer Start) - (Date and Time of Wafer Out)
Wafer Outs = Wafer Starts - Wafers Scrapped
Operator Efficiency = Theoretical Cycle Time / Actual Cycle Time
「台灣沒有豐富的地下資源,只有靠著腦
力資源才有未來。」
• 1976年身為經濟部長的孫運璿必須決定台灣是否積極發展積體
電路? 該引進哪一家公司的技術? 該選擇哪一種技術? 忍受多
大的投資風險?
• 七人小組: 建議台灣應該發展IC產業
• 施敏教授建議: 選擇RCA之CMOS
• 當時名單有: Hughes Electronics, GE, RCA, Fairchild.
• 投資: 400萬美元
• RCA: NMOS, Bipolar, CMOS
• CMOS: 省電
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Apollo 11 vs. iPhone 11
•Face ID
RAM : 1: 106 •氣壓感測器
•三軸陀螺儀
ROM: 1: 7x106 •加速度計
•接近感測器
CPU : 1: 105 •環境光度感測器
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