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Tutorial 4

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37 views

Tutorial 4

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f20231169
Copyright
© © All Rights Reserved
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Electronic Devices

Tutorial -4

BITS Pilani, K K Birla Goa Campus


Question – 1
In n-type silicon, the Fermi energy level varies linearly with distance over a short range. At x=0,
EF-EFi = 0.4 eV and, at x=10-3 cm, EF-EFi =0.15 eV. (a) Write the expression for the electron
concentration over the distance. (b) If the electron diffusion coefficient is Dn=25 cm2/s, calculate
the electron diffusion current density at (i) x=0 and (ii) x=5x10-4 cm.

BITS Pilani, K K Birla Goa Campus


Question – 2
In GaAs, the donor impurity concentration varies as Nd0 exp (-x/L) for 0≤ x ≤ L, where L=0. 1 m
and Nd0= 5x1016 cm-3. Assume n = 6000 cm2/V.s and T =300 K. (a) Derive the expression for the
electron diffusion current density versus distance over the given range of x. (b) Determine the
induced electric field that generates a drift current density that compensates the diffusion
current density.

BITS Pilani, K K Birla Goa Campus


Question – 3

(a) The electron concentration in a semiconductor is given by n=1016(1-x/L) cm-3 for 0≤ x ≤ L,


where L=10 m. The electron mobility and diffusion coefficient are n=1000 cm2/V.s and Dn =25.9
cm2/s. An electric field is applied such that the total electron current density is a constant over
the given range of x and is Jn=80 A/cm2. Determine the required electric field versus distance
function. (b) Repeat part (a) if Jn=20 A/cm2.

BITS Pilani, K K Birla Goa Campus


Question – 4
Consider the following energy band diagram. Take the semiconductor represented to be Si maintained at
300K with Ei-EF= Eg/4 at x= ±L and EF-Ei= Eg/4 at x= 0. Note the choice of EF as the reference level and
the identification of carriers at various points on the diagram.
a) Sketch the electrostatic potential (V) inside the semiconductor as a unction of x.
b) Sketch the electric field (ε) inside the semiconductor as a unction of x.
c) Ascertain the KE and PE of the electrons and holes pictures on the diagram.
d) Determine the resistivity of the x>L portion of the semiconductors. p=460 cm2/V.s

BITS Pilani, K K Birla Goa Campus


Practice

BITS Pilani, K K Birla Goa Campus


BITS Pilani, K K Birla Goa Campus

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