Unit-1

Introduction of Transmission Line

Radio waves and microwaves are a form of
electromagnetic radiation with operating frequencies
ranging from 30 to 300 MHz and 300 MHz to
300 GHz, respectively.
Different microwave applications and technologies
will use certain frequency band to avoid frequency
interference. These frequencies are grouped into
several smaller bands. The most commonly used
frequency spectrum classification today is created by
the Institute of Electrical and Electronics Engineers
(IEEE).
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 Circuit Model of Transmission Lines
• Circuit models of transmission lines are required if they are to
be used in a circuit simulator. RF and microwave engineering
uses two types of simulators. Spice-like simulators use lumped-
element transmission line models in which an RLGC model of a
short segment of line is replicated for the length of the line. If
the ground plane is treated as a universal ground, then the
model of a segment of length Δz ,r=RΔz,l=LΔz,g=GΔz, and
c=CΔΔz, where R,L,G, and C are the per unit length parameters
of the line. Cascading the segments to get the length of the line
yields the complete lumped-element model of the line.

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 Loss Less and Lossy Lines
• Circuit elements such as resistance, inductance,
conductance, and capacitance (R, L, G, C) are referred to as
primary line constants and are dependent on the geometry
of the transmission line.
• When circuit elements R = G = 0, the transmission line
becomes lossless. With series resistance and series
inductance, the transmission line is lossy. Lossless and lossy
transmission lines have different characteristics that are
dependent upon the impedance in the transmission line.
• If the transmission line is lossy, the characteristic
impedance is a complex number. If the transmission line is
lossless, the characteristic impedance is a real number.

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 Smith Chart
• The Smith chart is a mathematical transformation
of the two-dimensional Cartesian complex plane.
Complex numbers with positive real parts map
inside the circle. Those with negative real parts
map outside the circle. If we are dealing only with
impedances with non-negative resistive
components, our interest is focused on the area
inside the circle. The transformation, for an
impedance Smith chart, is:
• Γ=Z−Z0Z+Z0=z−1z+1,
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 Impedance Matching
• Impedance matching in transmission lines is enforced
to prevent reflections along an interconnect.
• Most impedance matching guidelines do not
explicitly mention the input impedance of an
interconnect, which will determine the S-parameters
(specifically return loss).
• The correct method for analyzing impedance
matching in a transmission line requires examining
the input impedance at each interface along an
interconnect.

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 Unit-2
Waveguide Structure
Concept of Modes & Characteristics of TEM, TE ,TM and Hybrid Modes
• For the propagation of high-frequency waves such as radiofrequency
waves, microwaves, or infrared waves, waveguides are commonly used.
Waveguides are structures that are used to guide electromagnetic waves to
a targeted destination. They transmit energy in one direction (towards the
destination) with minimum loss.
• The propagation of through a waveguide depends on the type of
electromagnetic wave and the medium inside it. Wave propagation takes
different modes depending on the distribution of the electric and magnetic
field with respect to the direction of propagation. Each mode transverse
electric mode (TE mode) is one such mode in waveguide propagation that
is seen in rectangular waveguides and circular waveguides.

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 Electromagnetic Wave Propagation in
Waveguides
• Waveguide structures transmit electromagnetic energy
within a certain frequency range from source to
destination. The propagation of waves can be either
transverse electric (TE) mode or transverse magnetic
(TM) mode. As a waveguide structure is made of a
single conductor, transverse electromagnetic mode
(TEM) is not supported by them.
• In both the TE and TM modes of propagation, the
electric fields and magnetic fields oscillate. Depending
on the mode, the axis of oscillation changes its
orientation with respect to the direction of propagation.
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 TE Mode in Waveguides

• In the TE mode of electromagnetic propagation, the

electric field is transverse to the direction of
propagation (z-axis), but the magnetic field is not only
transverse. The magnetic field has both transverse and
longitudinal components. Only magnetic fields exist in
the direction of propagation.
• In TE, Hz≠0, Ez=0
• For each waveguide, the wave equation can be written
on the condition prevailing for TE mode and the
solution corresponds to magnetic fields. The solutions
are distinguished from each other using mode indexes
and are represented as TEmn or Hmn.

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• TE mode: This waveguide mode is dependent upon the
transverse electric waves, also sometimes called H waves,
characterized by the fact that the electric vector (E) being
always perpendicular to the direction of propagation.
• TM mode: Transverse magnetic waves, also called E
waves are characterized by the fact that the magnetic vector
(H vector) is always perpendicular to the direction of
propagation.
• TEM mode: The Transverse electromagnetic wave cannot
be propagated within a waveguide, but is included for
completeness. It is the mode that is commonly used within
coaxial and open wire feeders. The TEM wave is
characterized by the fact that both the electric vector (E
vector) and the magnetic vector (H vector) are
perpendicular to the direction of propagation.

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 Cut-off frequency, Propagation characteristics
• Consider a rectangular waveguide with width ‘a’ and
thickness ‘b’. Let TEmn be the mode active in the
waveguide. To calculate the cut-off frequency fc of
the rectangular waveguide, use the following
equation, where c is the speed of the light inside the
waveguide and m and n are the numbers that define
the mode of propagation

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• Dominant Mode
The dominant mode in a waveguide is the propagation mode
with the lowest cut-off frequency. The criterion for wave
propagation through the waveguide is that the operating
frequency should be greater than the dominant mode cut-off
frequency. There will be minimum degradation of the signal in
the dominant mode.
• Degenerate Mode
Rectangular waveguide does not support TEM mode. It allows
either TE mode or TM mode. If any two modes of propagation
share the same cut-off frequency, such modes are called
degenerate modes. The modes TEmn and TMmn are degenerate
modes in a rectangular waveguide.

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 PLANAR STRUCTURE
• What is planar transmission line structures.
• Types of planar structure.
• Strip Lines:
• MicroSrip lines,
• coplanar structures,
• Slot lines,
• Substrate Integrated Waveguide
• Suspended strip lines,
• Fin lines – configurations
• Field patterns,
• propagation characteristics
• Design considerations.
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• Comparison of characteristics
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of lines.
• Microwave integrated circuit (MIC) techniques represent an extension of
integrated circuit technology to microwave frequencies.

• Since four decades, MIC has increasingly replaced conventional microwave

circuits based on coaxial line and waveguide, especially for low power
requirements.
• In MIC technology, all the components are fabricated by the
photolithography technology in the planar form.

• The planar lines are used not only as interconnects to the components; these
are also used to develop passive microwave components and the matching
networks.

• There are several reasons for the wide use of planar transmission lines .

• First of all, they are broadband, while providing compact dimensions, high
reliability, reproducibility and light weight.

• Foremost, they are generally economical to produce as they are readily

adaptable to hybrid and monolithic integrated
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planar transmission lines consist of strip metallic conductors,
usually produced by some photographic process, on a non-
conducting substrate.

Typical substrate materials are slabs of dielectric, ferrite, or high

resistivity semiconductors. In most cases, there are metal ground
planes that can either be printed on the same substrate or be a part
of the metal housing of MIC.

This allows the characteristic impedance (Z0) of the line to be

controlled by defining the dimensions in a single plane the substrate
materials with permittivity εare denoted by gray areas, and
conductors and ground planes by bold lines. The region with free
permittivity ε0 is free space or air.

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 Planar Transmission Lines
w
w
er h er b

Microstrip Stripline

w w

er g g h er g g h

Coplanar Waveguide (CPW) Conductor-backed CPW

s s

er h er h

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Commonly used types of such structures for MICs(planar structures)

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 Strip Lines

The earliest form of planar transmission lines was stripline.

Striplines are essentially modifications of the two wire lines and coaxial lines. It
consists of a strip conductor centered between two parallel ground planes with
two equal slabs of a dielectric, ferrite, or semiconductor medium separating the
center conductor from the ground planes.

TEM mode
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 stripline has two conductors and a homogeneous dielectric, it supports a TEM wave, and
this is the usual mode of operation. Like parallel plate guide and coaxial line.

however, stripline can also support higher order waveguide modes. These can usually be
avoided in practice by restricting both the ground plane spacing and the sidewall width to
less than λd/2.

Shorting vias between the ground planes are often used to enforce this condition relative to
the sidewall width. Shorting vias should also be used to eliminate higher order modes that
can be generated.

e , 0 ,  Electric Field
b
w Magnetic Field

Field structure for TEM mode:

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  Analysis of stripline is not simple.
 TEM mode fields can be obtained from an electrostatic analysis (e.g.,
conformal mapping).
 A closed stripline structure is analyzed in the Pozar book by using a
numerical method.
a  b
b
For lossless TEM mode:
e , 0 ,  w b/2
1 1 c
vp   
e 0e 0e r er a
where c is light velocity  3 108 m / s

vp 
 L is Inductance / unit
 length
    0e 0e r  k0 e r
vp
C is Capacitance / unit
where k0   0e 0 propogation constant in free space length
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for practical computations simple formulas have been developed by curve fitting to the
exact solution .The resulting formula for characteristic impedance is

 0  b
Z0    ln  4 
4 e ln(4) Note :  0.441
 r  we  b 


Effective width Fringing term

 w
 0 ; for  0.35
Z0 as w we w  b
  2
b b  w w
0.35   ; for 0.1   0.35
 b b

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Inverting this solution to find w for given Z0:
 X ; for e r Z 0  120   
w 

b 
0.85  0.6  X ; for e r Z 0  120   

0 ln(4)
X  
4 e r Z0 

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 Attenuation
Dielectric Loss:

k k0 e r
 d  k   tan   tan  (TEM formula)
2 2

 e c
k  k   jk    0e c ec  e  j tan  
 e c

Rs t b

w e , 0 , 

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 Conductor Loss:

 4 Rse r Z 0
 (2.7  10 3
) A; for e r Z 0  120   
  ( b  t )
c
0
 
  Rs 
0.16  B; for e r Z 0  120   

  0 
Z b

where

w 1 bt  2b  t 
A  1 2 
    
ln
(b  t ) bt   t 
b 1 t 1  w 
B  1   0.414  ln  4 
w   2 w 2  t 
  0.7t 
 2 

Note: We cannot let t  0 when we calculate the conductor loss.

Find the width for a 50 ohms copper stripline conductor with b = 0.32 cm and εr = 2.20. If the
dielectric loss tangent is 0.001 and the operating frequency is 10 GHz, calculate the attenuation
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in dB/λ. Assume a conductor thickness of t =Department
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 Microstrip lines

The microstrip line is transmission line geometry with a single conductor trace on one
side of a dielectric substrate and a single ground plane on the other side is shown in Fig.

conductor

Dielectric e , 0 ,  w h

Since it is an open structure, microstrip line has a major fabrication advantage over the strip
line. It also features ease of interconnection and adjustments

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  In the microstrip line, the electromagnetic
fields exist partly in the air above the dielectric
substrate and partly within the substrate itself.

For most practical purposes, microstrip can

be treated as a TEM transmission line with an
effective relative permittivity (ε eff ) that is For h / << 1  dominant mode is quasi-
0
a weighted average between air and the TEM
substrate material.
But, the actual propagation of electromagnetic waves in microstrip is not purely TEM due
to the combination of an open air space and a dielectric medium. Thus, it is usually
assumed that the electromagnetic field in the microstrip line is quasi-TEM.

It is largely TEM, but in reality microstrip lines, unlike strip lines are dispersive, which
means that the wave velocity varies with frequency rather than remaining a constant. This
results in the varying of ε eff and Z0 with the frequency of the transmitted signal.
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good approximations for the phase velocity, propagation constant, and characteristic
impedance can be obtained from static, or quasi-static (TEM), solutions. Then the phase
velocity and propagation constant can be expressed as

Actual problem
w e0
er h

w eff e reff
Z air
0 :e eff
r 1 Z0

h
c
vp  Equivalent TEM problem
e eff
r  The effective permittivity gives the correct phase constant.

  k0 e reff  The effective

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 Approximate design formulas
The effective dielectric constant of a microstrip line is given approximately by

 
er 1 er 1 1 
e reff    
2 2  h 
 1  12 
 w 

Limiting cases:
er 1
w / h  0: e reff  (narrow strip)
2
w/h  : e reff  e r (wide strip)

The effective dielectric constant can be interpreted as the dielectric constant of a

homogeneous medium that equivalently replaces the air and dielectric regions of the
microstrip line, as shown in Figure .
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 Characteristic Impedance:

 60  8h w  w
 ln    ; for 1
 e r
eff
 w 4h  h
Z0   0 w
 ; for 1
w 
e reff   1.393  0.667ln   1.444  
 w h
 h h 

This formula can also be used for an air line: e reff  1

Inverting this solution to find w gives Z0:

 8e A w
 e2 A  2 ; for 2
w  h
 
h 2 er 1  0.61   w
 B  1  ln(2 B  1)   ln  
B  1  0.39   ; for 2
   2e r  e r  h
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 where
Z0 e r  1 e r  1  0.11 
A  0.33 
60 2 e r  1  e r 
0
B
2Z0 e r

This formula can also be used for an air line:

Z 0  Z 0air : e r  1

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 Types of losses in Microstrip lines
(Attenuation)
Considering a microstrip line as a quasi-TEM line, we can determine the attenuation due to
dielectric loss as

Dielectric loss: “filling” factor

e r  r  1 
Note:
k0 e r  e eff

d tan   eff  e reff  e reff  f 

2  e r  e r  1 

e reff  1: d  0
k0 e r
e eff
r  er : d  tan 
2
Conductor loss:
Rs
c  very crude (“parallel-plate”) approximation
Z0w
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 Numerical example
Design a microstrip line on a 0.5 mm alumina substrate (εr = 9.9,tanδ = 0.001) for a 50
ohms characteristic impedance. Find the length of this line required to produce a phase
delay of 270◦ at 10 GHz, and compute the total loss on this line, assuming copper
conductors. Compare the results obtained from the approximate formulas of (3.195)–
(3.199) with those from a microwave CAD package.

Solution
Given – substrate height (h)= 0.5 mm
relative dielectric constant (εr )= 9.9
characteristic impedance of line (Z0 )= 50
frequency(f)= 10GHz
conductor (copper)

First find
W/h for Z0 = 50 , and initially guess that W/h < 2.

w 8e A w
 2A ; for 2
h e 2 h
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 Z0 e r  1 e r  1  0.11  w 8e 2.223 8*9.23499
A   0.33    2*2.223 
60 2 er 1 er  h e  2 85.28512  2
50 9.9  1 9.9  1  0.11  73.87992
  0.8870
   0.33   83.28512
60 2 9.9  1  9.9 
 1.945  0.2785
 2.223

W/h = 0.8870. So the condition that W/h < 2 is satisfied; otherwise we would use the
expression for W/h > 2.

Then the required line width is W = 0.8870*h= 0.8870*0.5 mm = 0.4435mm

   
er 1 e r 1   1  9.9  1 9.9  1  1 
er 
eff
    
. 2 2  h  2 2  12 
 1  12   1 
 w  0.8870 
 5.45  4.45  0.2624  6.617
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The line length, for a 270◦ phase shift is found as

 = 270 0 =  l= e eff k0l

2 2  f 2  3.14  10  109 1
k0     209.33 m
 c 3  108

270 0 
l 180  8.72 mm
6.617  209.33

Attenuation due to dielectric loss is found Conductor loss:

er  r  The surface resistivity for copper

k0 e r  e eff
 1 
d tan   eff  at 10 GHz is 0.026 ohms,
2  e r  e r  1 
R 0.026
c  s 
209.33 9.9  9.9  6.617  1  Z 0 w 50  0.4435mm
 0.001  
2  6.617  9.9  1  
 0.001172 Np / mm
 0.10179 dB / cm
 0.255 Np / m or 0.022
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 Coplanar Waveguide (CPW)
The coplanar waveguide (CPW) structure consists of a center strip
width with two parallel ground planes equidistant from it on either
side, as shown below Fig. The center conductor and ground planes are
located in one plane on the substrate surface.

er g g h

Coplanar Waveguide (CPW)

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 Table-(1.1): Characteristics and Applications of the Various Planar Transmission Lines

Transmission Line Impedance Chip

Q - Factor Radiation Dispersive Range (Ω) Mounting Applications
Stripline 400 Low None 35-250 Poor  Blocking filters
250 Low (for high Low 20-120 Difficult for  Filters
(dielectric
substrate) ) shunt; easy for  Hybrids
series  High-Q resonators
Microstrip Line 100-150
(Si, GaAs High (for low
substrate) )

100 Medium High 60-200 Easy for shunt;  Antennas

Slotline difficult for  Phase shifters
series

150 Medium Low 20-250 Easy for series  Filters

CPW and shunt  Hybrids
 High-Q resonators
150 Medium Low 20-250 Easy for series  Filters
and shunt  Resonators
CPS  Mixer
 Modulator
 Feeding networks for
printed antenna
technology
500 None Low 10-400 Fair  Bandpass filters
 Quadrature hybrids
 Transitions to
Finline waveguide
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 Balanced mixer
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 Unit-3
Waveguide Passive Components

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Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Input Clockwise Anticlockwise Path Phase Remark
Path difference Path difference difference Difference
Port 1 Port 4 3λg/4 3λg/4 0 0 Add
Port1 Port 2 5λg/4 λg/4 λg 2π Add
Port1 Port 3 λg λg/2 λg/2 π Cancel

Vasim Khan,Assistant Prof. ,Electronics

Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Scattering Matrix

Vasim Khan,Assistant Prof. ,Electronics

Engineering Department Medicaps
University Indore
Duplexer in Radar

Vasim Khan,Assistant Prof. ,Electronics

Engineering Department Medicaps
University Indore
Scattering Matrix for 3 ports

Vasim Khan,Assistant Prof. ,Electronics

Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
 UNIT-4
SOLID STATE MICROWAVE DEVICES

Vasim Khan,Assistant Prof. ,Electronics

Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
TRAPATT Diode
The full form of TRAPATT diode is TRApped Plasma Avalanche
Triggered Transit diode. A microwave generator which
operates between hundreds of MHz to GHz. These are high
peak power diodes usually n+- p-p+ or p+-n-n+ structures
with n-type depletion region, width varying from 2.5 to 1.25
µm.

Vasim Khan,Assistant Prof. ,Electronics

Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
• Let us see what happens at each of the points.
• A: The voltage at point A is not sufficient for the
avalanche breakdown to occur. At A, charge carriers
due to thermal generation results in charging of the
diode like a linear capacitance.
• A-B: At this point, the magnitude of the electric field
increases. When a sufficient number of carriers are
generated, the electric field is depressed throughout
the depletion region causing the voltage to decrease
from B to C.
• C: This charge helps the avalanche to continue and a
dense plasma of electrons and holes is created. The
field is further depressed so as not to let the electrons
or holes out of the depletion layer, and traps the
remaining plasma.
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
• D: The voltage decreases at point D. A long time is required
to clear the plasma as the total plasma charge is large
compared to the charge per unit time in the external
current.
• E: At point E, the plasma is removed. Residual charges of
holes and electrons remain each at one end of the
deflection layer.
• E to F: The voltage increases as the residual charge is
removed.
• F: At point F, all the charge generated internally is removed.
• F to G: The diode charges like a capacitor.
• G: At point G, the diode current comes to zero for half a
period. The voltage remains constant as shown in the graph
above. This state continues until the current comes back on
and the cycle repeats.

Vasim Khan,Assistant Prof. ,Electronics

Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
• Applications
• There are many applications of this diode.
• Low power Doppler radars
• Local oscillator for radars
• Microwave beacon landing system
• Radio altimeter
• Phased array radar, etc.

Vasim Khan,Assistant Prof. ,Electronics

Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Numerical Problems

Vasim Khan,Assistant Prof. ,Electronics

Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Unit-5 MICROWAVE FILTERS

Vasim Khan,Assistant Prof. ,Electronics

Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore
Vasim Khan,Assistant Prof. ,Electronics
Engineering Department Medicaps
University Indore