VDSS ID25 RDS(on)

Standard Power MOSFET IXTH 7P50 -500V -7 A 1.5 Ω

P-Channel Enhancement Mode IXTH 8P50 -500V -8 A 1.2 Ω
Avalanche Rated

Symbol Test Conditions Maximum Ratings TO-247 AD

VDSS TJ = 25°C to 150°C -500 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V
VGS Continuous ±20 V
VGSM Transient ±30 V D (TAB)

ID25 TC = 25°C 7P50 -7 A

8P50 -8 A
IDM TC = 25°C, pulse width limited by TJ 7P50 -28 A G = Gate, D = Drain,
8P50 -32 A S = Source, TAB = Drain
IAR TC = 25°C 7P50 -7 A
8P50 -8 A
EAR TC = 25°C 30 mJ
Features
PD TC = 25°C 180 W
TJ -55 ... +150 °C • International standard package
TJM 150 °C JEDEC TO-247 AD
Tstg -55 ... +150 °C • Low R TM
HDMOS process
DS (on)

TL Maximum lead temperature for soldering 300 °C • Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
1.6 mm (0.062 in.) from case for 10 s
Md Mounting torque 1.13/10 Nm/lb.in.
rated
Weight 6 g • Low package inductance (<5 nH)
- easy to drive and to protect

Symbol Test Conditions Characteristic Values

Applications
(TJ = 25°C, unless otherwise specified)

• High side switching

min. typ. max.

VDSS V GS = 0 V, ID = -250 µA -500 V • Push-pull amplifiers

BVDSS Temperature Coefficient 0.054 %/K
• DC choppers
VGS(th) V DS = VGS, ID = -250 µA -3.0 -5.0 V
VGS(th) Temperature Coefficient -0.122 %/K • Automatic test equipment
IGSS V GS = ±20 VDC, VDS = 0 ±100 nA

IDSS V DS = 0.8 VDSS TJ = 25°C -200 µA Advantages

V GS = 0 V TJ = 125°C -1 mA • Easy to mount with 1 screw
(isolated mounting screw hole)
RDS(on) V GS = -10 V, ID = 0.5 ID25 7P50 1.5 Ω
8P50 1.2 Ω • Space savings
RDS(on) Temperature Coefficient 0.6 %/K
• High power density

© 2001 IXYS All rights reserved 94534E (6/01)

 IXTH 7P50
IXTH 8P50

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) TO-247 AD Outline
min. typ. max.

gfs V DS = -10 V; ID = ID25, pulse test 4 5 S

Ciss 3400 pF 1 2 3

Coss V GS = 0 V, VDS = -25 V, f = 1 MHz 450 pF

Crss 175 pF

td(on) 33 ns
tr V GS = -10 V, VDS = 0.5 VDSS ID = 0.5 ID25 27 ns
td(off) RG = 4.7 Ω (External) 35 ns Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
tf 35 ns
Dim. Millimeter Inches
Min. Max. Min. Max.
Qg(on) 130 nC
A 4.7 5.3 .185 .209
Qgs V GS = -10 V, VDS = 0.5 VDSS ID = 0.5 ID25 32 nC A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
Qgd 64 nC b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
RthJC 0.7 K/W b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
RthCS 0.25 K/W D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
Source-Drain Diode Characteristic Values S 6.15 BSC 242 BSC
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.

IS V GS = 0 7P50 -7 A
8P50 -8 A

ISM Repetitive; pulse width limited by TJM 7P50 -28 A

8P50 -32 A

VSD IF = IS, VGS = 0 V, -3 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t rr IF = IS, di/dt = 100 A/µs 400 ns

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025