Enhanced Multilevel Modular Converter With Reduced Number of Cells and Harmonic Content
Enhanced Multilevel Modular Converter With Reduced Number of Cells and Harmonic Content
fully edited. Content may change prior to final publication. Citation information: DOI 10.1109/JESTPE.2019.2904205, IEEE Journal
of Emerging and Selected Topics in Power Electronics
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS 1
Abstract—This paper presents an alternative implementation Several derivatives of modular multilevel converters that
of a modular multilevel converter (MMC) that generates a large employ unipolar, asymmetric and symmetric bipolar cells have
number of voltage levels per phase with high resolution voltage been presented [8]–[19]. It has been shown that the use of
steps from a reduced number of cells per arm. The presented
MMC employs a half-bridge chain-link of medium-voltage cells unipolar cells such as half-bridge or three-level flying capacitor
and a full-bridge chain-link of low-voltage cells in each of its cells leads to MMC topologies that cannot retain control
arms. The total blocking voltage of the full-bridge chain-link is when the DC link voltages fall below the respective critical
equivalent to half that of the medium-voltage half-bridge cell. voltage, and which are unable to block DC faults [10], [11].
The use of half and full-bridge cells with two distinct rated Asymmetric bipolar cells lead to MMCs that can remain under
voltages in each arm permits full exploitation of the full-bridge
cells to generate high resolution multilevel voltage waveforms full control when operating with positive DC link voltages
with fine stepped transitions between major voltage steps of from zero to rated DC voltage, even when the DC voltage
the medium-voltage half-bridge cells. In this manner, errors falls below the critical value [10]–[18]. They therefore offer
in the synthesis of the common-mode voltages of the three DC fault blocking and active control of DC fault currents. The
phase legs due to switching of the cell capacitors in and out mixed cell modular multilevel converter (MC-MMC) is an ex-
the power path are reduced. The nested multilevel operation
of the proposed MMC results in a number of voltage levels ample of an MMC that employs asymmetric bipolar cells [10],
which is related to the product, rather than the sum, of the [11], [13], [20], [21]. Moreover, the use of symmetrical bipolar
numbers of half and full-bridge cells. Detailed comparisons with cells such as the full-bridge or five-level cross connected cells
existing MMC implementations show that the proposed MMC lead to MMCs that can operate with bipolar (positive and
implementation offers the best design trade-offs (superior AC negative) DC voltage, including zero voltage, and can reverse
and DC waveforms with reduced control and power circuit
complexity). The validity of the proposed MMC implementation the DC or active power by change of DC current or voltage
is confirmed using simulations and experimentally. polarities.
Besides the realization of MMCs employing either symmet-
Index Terms—HVDC, MMC, converter topology, hybrid con-
verter rical or asymmetrical cells, further performance optimization
is possible by mixing different types of the cells, resulting in
hybrid multilevel converters. Most of the hybrid converters
I. I NTRODUCTION developed in the last decade were motivated by the trade-
An efficient transmission technology is required for the offs between DC fault ride-through, efficiency and footprint.
reinforcement of weak AC networks and continuous increase Amongst the many hybrid converter topologies proposed in
in the growth of renewable energy production, especially from the open literature in recent years, the MC-MMC is the
remote offshore wind farms [1]. Existing multilevel voltage most attractive topology as it retains many of the attributes
source converter based HVDC transmission systems have of the conventional MMC such as modularity and simple
received universal acceptance from the power industry [2], methods for bypassing faulted cells, while permitting delivery
[3], because they satisfy the requirements of high efficiency of customized features such as bespoke control range for a
and high power quality on both AC and DC sides, while given level of semiconductor losses [20].
providing internal fault management which is critical for In the broader context, MMCs and hybrid converters that
ensuring continuous operation during cell failure [4], [5]. employ asymmetrical and symmetrical bipolar cells, or a
Two main competing realizations of the modular multilevel mixture of different cells, achieve DC fault blocking and
converter (MMC) exist. The first approach utilizes a large greater control flexibility at the expense of higher semicon-
number of cells per arm, where the blocking capability of ductor losses compared to converters with unipolar cells.
each cell is small and is defined by the rating of a single Additionally, other types of hybrid multilevel converters exist
switching device (i.e. 1.6-3kV) [6]. The second approach (such as the alternate arm converter and the hybrid cascaded
adopts a reduced number of cells per arm, with each cell two-level converter), that use symmetrical bipolar cells (e.g.
rated for high DC operating voltage, ranging between 16- full-bridge cells) and incorporate director switches that operate
20kV [7]. The latter approach requires the adoption of series- at extremely low-frequency to achieve DC fault blocking
connected semiconductor devices. Reducing the number of capability at reduced footprint and semiconductor losses [22],
MMC cells is attractive since it reduces both the size and [23]. However, the aforementioned hybrid converters lack
complexity of the converter. However, AC and DC power the power quality of an MMC and require filters, thereby
quality are compromised when compared to converters with making the claim of total converter station footprint reduction
a high number of cells per arm. debatable.
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This paper presents a novel MMC that utilizes both half- 1.2 1.6
Vcm
bridge (HB) and full-bridge (FB) chain-links in its arms. The 1 1.2
HB chain-link is rated for full DC-link voltage and, with 0.8 0.8
each HB cell being rated for medium voltage and therefore
p.u.
p.u.
0.6 0.4
Iarml Iarmu
requiring series-connected devices, is used to synthesize an 0.4
Varmu Varml
0
approximation to the fundamental sinusoidal output voltage −0.4
0.2
with large (major) voltage steps. The FB chain-link, with total
0 −0.8
blocking voltage equivalent to half that of an HB cell, is used 0 0.005 0.01 0.015 0.02 0 0.005 0.01 0.015 0.02
T ime [s] T ime [s]
to generate additional voltage levels with small (minor) voltage
steps to smooth the transitions between the large voltage steps (a) (b)
generated by the HB cells so that the MMC provides high- 1.2
Vcm
1.6
has the potential to eliminate both AC and DC side filters 0.8 0.8
p.u.
p.u.
0.6 0.4
Iarml Iarmu
also exhibits a new, unique multiplication feature where the 0.4
Varmu Varml
0
number of voltage levels per arm is approximately equal to the 0.2 −0.4
product of the numbers of HB and FB cells, whilst the output
0 −0.8
0 0.005 0.01 0.015 0.02 0 0.005 0.01 0.015 0.02
voltage step amplitude is equal to that of the FB cell voltage. T ime [s] T ime [s]
These characteristics contribute to significant improvement in
the quality of the AC and DC side waveforms generated by (c) (d)
the proposed MMC. Fig. 1. MMC (P : 1000MW, VDC : 640kV, Larm : 0.05p.u.) common-mode
The paper is organized as follows: Section II explains voltage, arm voltages and currents (a)-(b) 40 cells, (c)-(d) 400 cells.
the main motivation for the proposed MMC. Section III
describes the theoretical principles that underpin the operation
the use of large switching voltages increases the magnitudes
and modulation of the proposed MMC. Section IV presents
of the high-frequency currents and voltages to be injected
illustrative simulation and experimental results to corroborate
into the DC side. Relatively large arm inductors are therefore
the theoretical discussions presented in Section III. Section V
required to suppress the high-frequency components of the
discusses the scalability of the proposed MMC, and Section
circulating currents. Thus, an increased number of levels with
VI presents the conclusions, where the main findings of this
smaller switching voltages improves the power quality of the
research are summarized.
AC and DC side waveforms, as well as the arm waveforms,
and eliminates or minimizes passive filtering requirements.
II. M OTIVATION It should be stressed that DC fault blocking is not one
The MMC synthesizes AC voltage by inserting and by- of the motivations of the proposed topology, especially as
passing cells in the upper and lower arms such that the the maximum negative voltage its FB chain-link produces
blocking voltage of the inserted cells in both arms is slightly is negligible and insufficient to facilitate DC fault blocking.
larger or smaller than the imposed DC link voltage [24]. Instead the proposed topology is an enhancement that applies
In MMC with large numbers of cells per arm, where each to half or full-bridge MMCs that employ medium-voltage
cell is rated for a small voltage ranging from 1.6-2.5kV, the cells, predominantly to improve the quality of the AC and
nearest voltage level modulation (NLM) scheme synthesizes DC side waveforms. However, only improvement of the half-
high quality AC and DC side waveforms. In contrast, in MMC bridge MMC is pursued in this paper due to space limitations.
with relatively small numbers of cells per arm, where the rated
voltage per cell ranges from 15-20kV, pulse width modulation III. P ROPOSED TOPOLOGY
(PWM) is widely used to facilitate accurate synthesis of the In this section, the proposed topology is described in
output AC and DC voltages. The use of series-connected the context of cell placement design, fundamental operation,
switching devices in the high-voltage cells of an MMC with a modulation strategies and power losses.
reduced number of cells, e.g. 40 for a 640kV HVDC converter,
introduces significant errors to the output AC and common- A. Converter design
mode voltages of the three MMC legs, and high-frequency
Fig. 2 shows one phase leg of the proposed Enhanced MMC
components in the arm currents as shown in Fig. 1(a) and (b).
(EMMC) topology. Each arm of the EMMC consists of two
To satisfy the harmonic requirements specified by the Grid
types of chain-link: the half-bridge (HB) chain-link and the
Code, an AC filter is required to reject the high-frequency
full-bridge (FB) chain-link. The total blocking voltage of the
PWM harmonics [25]. A DC filter is required to remove
FB chain-link is equivalent to half the rated voltage of an HB
the voltage mismatch that may cause ripple resulting from
cell. If suffixes hb and f b signify the variables and parameters
transitions between the different voltages, as depicted in Fig. 1.
relating to the HB and FB chain-links respectively, the HB and
Under fast-acting current interruption, i.e. DC circuit breakers
FB cell voltages are described as:
with operating times in the range 2-5ms, over-sizing of the arm
inductors is unnecessary [26]. Increased voltage error due to VDC
Vcell−hb = (1)
Nhb
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1.25 0.625
VchainHB
1 0.5 VchainHB
Ccell−f b Varm Vcell−hb
V oltage [p.u.]
V oltage [p.u.]
0.375
0.75
Vcell−f b
Upper HB 0.25
VDC 0.5 Varm
Ccell−hb Chainlink
VchainF B 0.125
0.25
Upper FB VDC 0
Chainlink o
2·NM 0.125 Vcell−hb Vcell−f b
MC
0 −0.125
Ccell−f b −0.125 VchainF B
Larm
−0.25 −0.25
Ccell−hb 0 0.005 0.01 0.015 0.02 0 0.0025 0.005
T ime [s] T ime [s]
Larm
(a) (b)
Lower HB
Chainlink VDC
Vcell−hb
cell ( 2NVhbDC
Nf b = 2Nf b ). The positive and negative peaks
of Vchainf b in each arm are limited to ± 12 Vcell−hb , which
Fig. 2. Phase representation of EMMC topology. suggests that the minimum blocking voltage of the FB chain-
link is 21 Vcell−hb . Based on Fig. 3, the illustrative EMMC
consisting of 4 HB and 2 FB cells can generate 17 discrete
where Vcell−hb is the voltage across an HB cell, Nhb is the voltage levels in each arm. The number of arm voltage levels
number of cells in the HB chain-link, and VDC is the pole-to- generated can be expressed generically as in (5).
pole DC voltage. The HB cell capacitance may be expressed in terms of the
Vcell−hb arm equivalent capacitance Carm−tot as:
Vcell−f b = (2)
2Nf b Ccell−hb = Carm−tot · Nhb (6)
where Vcell−f b is the voltage across an FB cell and Nf b is the where Ccell−hb is the cell capacitance for the HB chain-link.
number of cells in the FB chain-link of each arm. Each arm Similarly the cell capacitance Ccell−f b for the FB cell is
will have a total number of cells N , defined in (3). expressed in terms of HB cell capacitance Ccell−hb and the
N = Nhb + Nf b (3) number of FB cells Nf b as:
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the continuous modulating signal mhb is used to estimate the C. Converter analysis
number of HB cells to be inserted and bypassed in each arm on In the following analysis of the proposed EMMC, subscript
a discrete basis, as shown in Fig. 4(a). Equally, the FB chain- j defines the phase index (i.e. j = a, b, c) and k defines the
link is required to inject voltage harmonics into each arm, thus upper and lower position of the arm (i.e. k = u for the upper
the modulating signal of the FB chain-link is extracted as an arm and k = l for the lower arm). The FB and HB cell
error between the target fundamental voltage and its switched capacitor currents can be described in terms of arm currents
equivalent, as shown in Fig. 4(b). Thus, the modulating signals and their switching functions (Scell ) as:
for the HB and FB chain-links are:
Nhb
mhb ∼
X
= Scell−hbNhb ,j,k (12)
mhb = M · cos(ωt + δ) (8)
i=1
mhbN LM = round(mhb · Nhb ) (9) Nf b
∼
X
mf b = mhb · Nhb − mhb (10) mf b = Scell−f bNf b ,j,k (13)
i=1
mf bN LM = round(mf b · Nf b ) (11)
icell−hbNhb ,j,k = Scell−hbNhb ,j,k · ij,k (14)
where M represents modulation index amplitude.
Equations (8)-(11) show that the FB and HB cell modulation icell−f bNf b ,j,k = Scell−f bNf b ,j,k · ij,k (15)
indexes are created from the same reference. Fig. 4 shows that Each arm voltage varmj,k is formed by the summation of
the HB chain link of each arm generates a staircase voltage individual cell voltages vcell−hbNhb ,j,k (t) and vcell−f bNhb ,j,k (t)
with Nhb + 1 levels, with a pre-defined major voltage step, as described in (16) to (19):
defined in (1), between two consecutive voltage levels. In
contrast, the FB chain link of each arm generates a bipolar Z
1
voltage consisting of 2Nf b + 1 levels, with a step voltage of vcell−hbNhb ,j,k (t) = · icell−hbNhb ,j,k (t) dt (16)
Vcell−f b defined in (2). The FB cells are switched to produce Ccell−hb
positive and negative output voltage steps around an artificial Z
zero voltage level that is synchronized with the edges of 1
vcell−f bNf b ,j,k (t) = · icell−f bNf b ,j,k (t) dt (17)
mhbN LM . Fig. 4(c) shows the ideal modulating signals of the Ccell−f b
HB and FB chain-links normalized for the synthesis of the
minor voltage levels between two successive major voltage Nhb
X
levels. varmj,k = scell−hbNhb ,j,k · vcell−hbNhb ,j,k
Conventional capacitor voltage balancing techniques, such y=1
as the sorting, tolerance band and cell reference modulation Nf b (18)
X
methods [27], [28], can be applied to both chain-links of the + scell−f bNf b ,j,k · vcell−f bNf b ,j,k
EMMC. y=1
or
5 3
mf bN LM varmj,k = VchainHBj,k + VchainF Bj,k (19)
4 2
3 1
The instantaneous common-mode voltage the MMC phase
mhb
legs present at its DC terminals can be expressed in terms
Nhb
Nf b
2 mhbN LM 0
1 −1
of the instantaneous upper and lower arm voltages (varmj,u ,
0 −2
varmj,l ) as:
mf b
−1
0 0.005 0.01 0.015 0.02
−3
0 0.005 0.01 0.015 0.02 Vcm = varmj,u + varmj,l = VDC ± dV (20)
T ime [s] T ime [s]
(a) (b)
where dV represents the DC voltage drops across the internal
resistance of the arm reactors and switching devices of the
Nhbn
upper and lower arms. Synthesis of the AC voltage, as well
mhbN LM as the AC, common-mode and circulating currents, is similar
Nf b
Nhb
2
to that in the conventional MMC [24]. Fundamentally, the
mhb
Nhbn−1 Nhb necessary condition for cell capacitor voltage balancing is that
Nhb
2 the energy exchange between the cell capacitors of the HB and
FB chain-links, and both chain-links with the AC side, must
mf bN LM be zero as described in (21) and (22).
Nhbn−2
(c)
Z T
EHBj,k = mhb · iarmj,k (t) dt = 0 (21)
Fig. 4. Modulation signals: (a) HB chain-link, (b) FB chain-link, (c) Detailed 0
illustration of modulation signals. Z T
EF Bj,k = mf b · iarmj,k (t) dt = 0 (22)
0
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Wf bj,k
PI
D. Modulation schemes
Circulating Current Suppression controller Table I lists a number of hybrid modulation techniques
ij,u PR controller which are applicable for controlling the EMMC HB and FB
0.5 Larm Kpr chain-links. The first scheme is well-suited to the low number
HPF
ij,l
(5Hz)
0 of HB and FB cells. Application of PWM to the HB chain-
Kir
BPF
link with major voltage steps permits accurate synthesis of
(2ω)
the fundamental voltage over the full modulation index linear
Energy controller
Wj∗ Pac
3
Vdc
2
range. FB cell balancing is therefore readily achievable over
mf b
Wsum,j i∗dif f,j
PI PI
Eq.(9)to(10) the full modulation range as the FB chain-links will not be
0
forced to produce fundamental voltage (or exchange non-zero
vd θ Vdc
Wdif f,j
Power to
active power). This scheme is not however preferred due to
PI current
the increased complexity of the implementation, difficulty in
Outer controller Inner controller synchronizing two high-frequency modulations, and switching
mhb
P∗
vd loss concerns. By incorporating selective harmonic elimination
P PI i∗d vq∗ vmd
PI (SHE), the second scheme in Table I offers similar attributes
Vdc PI
ωL to the first scheme for low numbers of HB and FB cells,
Vdc∗ id dq
iq abc
including operation over the full modulation index range. Its
ωL
i∗q vq∗
extension to MMC with large numbers of HB cells is, however,
vmq θ
Q PI PI problematic with regard to calculation of switching angles and
Q∗ vq implementation, particularly at high modulation indexes where
Grid synchronization
vj,ac
abc
vd several angles will be indistinguishable. The third scheme in
ij,ac vq
vj,ac dq
id
iq
Table I inherently has all the features of the second scheme
P LL θ
when it is applied to MMC with large numbers of HB cells.
Fig. 5. EMMC control structure When it is applied to MMC with reduced numbers of HB cells,
its inability to accurately synthesize the required fundamental
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Losses [M W ]
10 6.2
fourth scheme is well suited to MMC with large numbers of
HB and FB cells. Thus, it is able to operate over the full 6
modulation index and power factor range. 1
5.8
os
T
T
Number of HB cells
M
IG
IG
IG
−
MODULATION SCHEMES
i−
i−
i−
iC
S
S
1
0
40
+
40
+
C
40
40
C
C
C
M
M
M
M
M
M
M
HB FB
E
E
Scheme
Chain-link Chain-link (a) (b)
1 PWM PWM
Fig. 7. Semiconductor loss estimation: (a) Semiconductor loss increase
2 SHE PWM versus the number of HB cells, (b) Semiconductor loss comparison between
conventional MMC and EMMC with Si-IGBTs and SiC-MOSFETs.
3 NLM PWM
4 NLM NLM
and diode threshold voltages, on-state resistance, turn-on and
turn-off energy, and diode recovery energy.
E. Converter power losses Fig. 7(b) and Table II show that the EMMC has marginally
higher conduction loss compared to the conventional MMC
The increased semiconductor losses in the EMMC when with 40 and 400 cells per arm, when all MMCs being
compared to the conventional MMC are highly dependent compared employ the same silicon IGBTs. Amongst the
on the proportional relationship between the HB cell voltage silicon IGBT MMCs, the 400-cell MMC exhibits the lowest
and the DC link voltage. When NLM is applied to an HB switching loss, followed by the proposed EMMC, while the
chain-link which is subjected to high voltage and switching conventional 40-cell MMC exhibits the highest switching loss.
frequency ranging from 150-300Hz, the switching loss is As a result, the overall semiconductor loss of the EMMC is
expected to be slightly lower than that which could be achieved slightly lower than that of the conventional 40-cell MMC,
with PWM. However, due to FB cell operation, the additional with the conventional 400-cell MMC exhibiting the lowest
conduction losses are equivalent to those of one HB cell and, overall semiconductor loss. Additionally, the results in Fig.
as a result, the FB losses will be a small proportion of the 7(b) and Table II show further reduction in semiconductor
total arm losses, as show in (24). The total switching losses loss of the EMMC is possible by adopting wide-band-gap
may be reduced as the HB cells switch less frequently, while switching devices such as silicon carbide MOSFETs.
FB cells switch at lower voltage. Additionally, as the voltage Based on the basic design presented, the EMMC increases
requirement of FB cells is low more efficient semiconductors, semiconductor count by 2.5%, which can be offset by other
such as SiC MOSFETs which have lower conduction and design considerations such as cell redundancy.
switching losses when compared to similarly rated IGBTs,
may be employed. TABLE II
Nhb + 1 S EMICONDUCTOR LOSS COMPARISON BETWEEN MMC AND EMMC
PEM M Ccond = · PM M Ccond (24)
Nhb
Conduction Switching Total
Fig. 7(a) shows the correlation between the number of Losses
[MW] [MW] [MW]
HB cells and the increase in total semiconductor losses, but M M C400Si−IGBT 4.75 1.14 5.89
does not consider the potential reduction in switching and M M C40Si−IGBT 4.75 1.75 6.50
passive filter losses. As the number of HB cells increases the EM M C40+1Si−IGBT 4.87 1.14 6.32
incremental semiconductor losses decrease. EM M C40+1SiC−M os 4.87 1.35 6.22
Fig. 7(b) and Table II present a semiconductor loss compar-
ison between the conventional MMC implementations (40-cell
MMC and 400-cell MMC) and the EMMC. Table II and Fig.
7(b) display semiconductor losses for the 400-cell HB-MMC IV. T OPOLOGY VALIDATION
that uses silicon IGBTs (M M C400Si−IGBT ), the 40-cell HB- This section presents simulation and experimental validation
MMC that uses silicon IGBTs (M M C40Si−IGBT ), the EMMC of the EMMC. Table III shows the simulation and experimental
with 40 HB cells and 5 FB cells, where both HB and FB test rig parameters used to substantiate the viability of the
cells employ silicon IGBTs (EM M C40+1Si−IGBT ), and the EMMC. In both simulation and experimental studies, the HB
EMMC with 40 HB cells and 5 FB cells, where the HB cells chain-link is controlled using NLM, whilst the FB chain-link
use Silicon IGBTs and the FB cells employ silicon carbide is controlled using high-frequency PWM with 2.5kHz level-
(SiC) MOSFETs (EM M C40+1SiC−M os ). The semiconductor shifted carriers (one carrier per FB cell). Both chains adopt
losses displayed are computed from a detailed power loss sorting based capacitor voltage balance. The sizing of the HB
model [25] which accounts for junction temperature, IGBT cell capacitance is derived from a scaled system with inertia
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V oltage [V ]
V oltage [V ]
200 0
TABLE III
−20
C ONVERTER SPECIFICATION 100
−40
V oltage [V ]
V oltage [V ]
300 40
275 lower 35
250 30
Simulation results where one phase of the EMMC operates 0 0.005 0.01 0.015 0.02 0 0.005 0.01 0.015 0.02
T ime [s] T ime [s]
under open-loop control with a modulation index of 0.85
and a resistive load of 17Ω are shown in Fig. 8. Fig. 8(a) (c) (d)
shows the low-frequency modulation of the HB chain-link 400 350
voltage waveform using NLM, while Fig. 8(b) shows the high- upper lower
300 325
frequency modulation of the FB chain-link using PWM as de-
V oltage [V ]
scribed earlier. Observe that the synthesized switched voltage, V oltage [V ] 200
300
Current [A]
state values. Fig. 8(e) shows the total upper and lower arm
V oltage [V ]
50 2
small step voltage transitions. Observe that the upper and −150
0 0.005 0.01 0.015 0.02
−8
0 0.005 0.01 0.015 0.02
lower arm voltages in Fig. 8(e) exhibit a substantial increase T ime [s] T ime [s]
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400 60
upper lower 40
300
20
V oltage [V ]
V oltage [V ]
200 0
−20
100
−40
upper lower
−60
0
−50 −80
0 0.005 0.01 0.015 0.02 0 0.005 0.01 0.015 0.02
T ime [s] T ime [s]
(a) (b)
(a) (b)
350 50
vcell−hb1..Nhb ,u lower
Upper HB
Chainlink Shb1..Nhb ,u 325 upper 45
V oltage [V ]
V oltage [V ]
vcell−f b1..Nf b ,u
Cf Upper FB
Chainlink Sf b1..Nf b ,u Shb1..Nhb ,u 300 40
vcell−hb1..Nhb ,u
MCU 1 Shb1..Nhb ,l
vcell−hb1..Nhb ,l 275 lower 35
Larm upper
RLOAD Iarmup,low
VDC Reference
Generator 250 30
0 0.005 0.01 0.015 0.02 0 0.005 0.01 0.015 0.02
V oltage [V ]
V oltage [V ] 200
300
(c)
100
275
Fig. 9. Experimental configuration: (a) HB and FB chain-links, (b) converter
cell, (c) schematic diagram. 0
−50 250
0 0.005 0.01 0.015 0.02 0 0.005 0.01 0.015 0.02
T ime [s] T ime [s]
Current [A]
V oltage [V ]
50
shown in Fig. 9(c), to create a return path for the single- 2
0 0
phase arrangement. A 17Ω resistive load is connected to −2
−50
the converter AC side. The experimental tests replicate the −4
−100
simulation study to enable direct comparison of the results. −6
−150 −8
Fig. 10 shows that the experimental waveforms for the voltages 0 0.005 0.01 0.015 0.02 0 0.005 0.01 0.015 0.02
T ime [s] T ime [s]
across the HB and FB chain-links of the upper and lower arms,
the HB and FB cell capacitor voltages, the upper and lower (g) (h)
total arm voltages, the common-mode voltage, and the output Fig. 10. EMMC experimental results: (a) HB chain-link voltage, (b) FB chain-
phase voltage and current correspond well with the simula- link voltage, (c) HB chain-link total capacitor voltage, (d) FB chain-link total
tion waveforms illustrated in Fig. 8. The low-energy high- capacitor voltage, (e) total arm voltage, (f) common-mode voltage, (g) output
AC voltage, (h) output AC current.
frequency voltage and current spikes in Fig. 10 (a), (b), (e),
(f) and (g) are due to small switching mismatches introduced
by factors such as dead-time, differences in the turn-on and models developed in the EMTP-RV simulation environment,
turn-off times, rapid reference tracking and electromagnetic and considers a number of configurations and comparisons
interference. The adverse impact of these factors is amplified with the conventional MMC. Details of the various MMC
in the experimental waveforms in Fig. 10 due to the relative configurations being compared are shown in Table IV. In
size of the minor voltage steps of the FB cells compared to these illustrative simulations, the conventional MMC with 40
that of the major voltage steps of the HB cells. In a full-scale medium-voltage cells uses PWM and that with 400 cells uses
system where the ratio of the minor to major voltage steps NLM, whilst the HB and FB chain-links of the EMMC use
will be of the order of 0.1 or less, these current spikes are NLM. Fig. 11 shows simulation waveforms of the conventional
expected to be attenuated by the arm inductors. MMC with 40 and 400 HB cells, and the EMMC with
Nhb =40 and Nf b =5. The plots for output phase voltages
V. D ETAILED QUANTITATIVE CONVERTER COMPARISONS and currents are illustrated in rows (a) and (b) of Fig. 11
To complement the simulation and experimental validation and show that all converters being compared produce high
presented in Section IV, this section demonstrates the scalabil- quality output voltages. However, the proposed EMMC with
ity of the EMMC to high-voltage applications, using full-scale 40 medium-voltage HB cells (each rated at 16kV) and 5 FB
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of Emerging and Selected Topics in Power Electronics
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS 9
150
0
Nhb =40
−150 N o cells Nhb =40 Nhb =400
Nf b =5
−300
2500 HB chain-link
PWM NLM NLM
modulation
(b) IAC [A]
1250
0 FB chain-link
−1250 - - NLM
modulation
−2500
HB cell
600
16 1.6 16
voltage [kV]
(c) varm [kV ]
400
FB cell
200 - - 0.8
voltage [kV]
0
HB cell
1800 1.30 13.02 1.30
capacitance [mF]
(d) iarm [A]
900
FB cell
- - 6.51
0
capacitance [mF]
−900 P [MW] 1000
1900
VDC [kV] 640
(e) IDC [A]
1700
1500 Larm [p.u.] 0.05
1300
1100
670
which any AC-side equipment will be subjected. The DC link
(f) Vcm [kV ]
650
currents and common-mode voltages shown in Fig. 11 rows (e)
630 and (f) reveal significant injection of high-frequency harmonic
610
18
components into the DC side of the conventional MMC with
700
40 medium-voltage HB cells compared to the conventional
(g) Vctot−hb [kV ]
17
Vctot−f b [kV ]
500
MMC with 400 HB cells and the proposed EMMC (the DC
16
300 link voltage ripples of the conventional MMCs with 40 and
15
100 400 HB cells per arm, and the EMMC with 40 HB and 5 FB
0 14
0.005
time [s]
0.015 0.005
time [s]
0.015 0.005
time [s]
0.015 cells per arm, are 5.18%, 0.22% and 0.25% respectively). This
0 is because the large switching cell voltage of the conventional
MMC with 40 medium-voltage HB cells (V chb = 16kV) creates
(h) |UAC | [db]
−20
−80
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
Harmonics [N o ] Harmonics [N o ] Harmonics [N o ] 10
600
V oltage [kV ]
and 400 (middle column) cells, and an EMMC with 40 HB cells and 5 FB 400
200
−5
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of Emerging and Selected Topics in Power Electronics
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS 10
DC voltage error %
significantly reduced number of cells per arm that generates
Number of levels
10
102
high-quality AC and DC side waveforms, and a high number
5 of output voltage levels to rival the performance of the conven-
tional MMC with hundreds of cells per arm. This is achieved
0
by incorporating low-voltage FB chain-links with blocking
101 102 103 101 102 103
Number of cells Number of cells voltage equal to half that of an HB cell. The theoretical
(a) (b) development, simulations and experimental results confirm
that the EMMC offers reduced AC harmonics and DC voltage
12 2
MMC MMC ripple with a low number of cells per arm when compared to
10 EM M C EM M C
conventional MMC. The main features of the EMMC are:
DC current Ripple %
1.5
AC voltage THD %
8
• Significant improvements in the power quality of the AC
6 1
and DC side waveforms without significant increase in
4
0.5
the power circuit and control complexity when compared
2 to the conventional MMC.
0
101 102 103
0
101 102 103
• In comparison with a conventional MMC with the same
Number of cells Number of cells
number of cells, the EMMC has similar volume but
(c) (d) eliminates the need for AC and DC side filters due to
Fig. 13. Scalability of EMMC compared to conventional MMC for various
significantly improved output power quality.
numbers of cells: (a) correlation between number of cells and number of levels • The proposed concept of the low-voltage FB chain-link
produced in each arm, (b) common-mode DC voltage error, (c) DC current can be integrated into existing, currently operational,
ripple, (d) AC phase voltage THD.
low cell count MMC-based HVDC links with minimum
modification, and can be implemented in FB-MMC and
mode voltage compared to an MMC with 400 HB cells (V chb = other hybrid topologies.
• Gains that are achieved in power quality outweigh the
1.6kV) and the proposed EMMC. In practice, the DC link
voltage ripple would be exacerbated in the MMC with 40 cells marginal increases in semiconductor losses and area due
due to the dead-times and the significant mismatch between to integration of the low-voltage FB chain-links. These
the turn-on and turn off timings of the series-connected IGBTs. losses may however be reduced by using state-of-the-art
Fig. 11 row (g) shows the total cell capacitor voltage for each semiconductors devices.
of the three converters, and highlights that the total HB cell
voltages are well regulated with identical ripple, whilst the VII. ACKNOWLEDGEMENT
total EMMC FB cell voltage is also well regulated and is The authors gratefully acknowledge the support of Réseau
only a small portion of the total HB cell voltage. Fig. 12 (a) de Transport d’Électricité (RTE) in conducting this research.
and (b) show that the voltage stresses in the HB and FB cell
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