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Problem Set 06

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48 views

Problem Set 06

Uploaded by

Yasmine Elogail
Copyright
© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
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The German University in Cairo Electronics 5 Semester


Faculty of Information Engineering & Technology Semiconductors (Elct 503)
Electronics Department Fall 2006

Problem Set 6

1) Calculate Vbi in a Silicon pn junction with ND = 1015 at T=300 K for ;


a) NA = 1015 cm-3
b) NA = 1016 cm-3
c) NA = 1018 cm-3

2) An abrupt silicon p-n junction consists of a p-type region containing 2 x 1016 cm-3
acceptors and an n-type region containing also 1016 cm-3 acceptors in addition to
1017 cm-3 donors. [ ni = 1010 cm-3].
a) Calculate the thermal equilibrium density of electrons and holes in the p-type
region & in the n-type region.
b) Calculate the built-in potential of the p-n junction.
c) Calculate the built-in potential of the p-n junction at 400 K.

3) An abrupt silicon pn junction at zero bias has dopant concentration of NA = 1017 cm-3
and ND = 5×1015 cm-3, T=300K
a) Calculate the Fermi level on each side of the junction with respect to the intrinsic
Fermi level.
b) Determine Vbi from the results of a).
c) Determine Vbi from the equation and compare the results to part b).
d) Determine xn & xp and the peak electric field for this junction.

4) Consider the uniformly doped GaAs junction at T=300 K. At zero bias, only 20
percent of the total space charge region is to be in the p region. The built in
potential barrier is Vbi = 1.2 e.v. For zero bias determine
a) NA , b) ND , c) xn , d) xp , e) Emax
5) An abrupt silicon pn junction has dopant concentrations of NA = 2× 1016 cm-3 ,
ND = 2× 1015 cm-3 at T=300K.Calculate:
a) Vbi .
b) w at VR = 0 & VR = 8V .
c) Emax at VR = 0 & VR = 8V .

6) An ideal one sided p+n junction has uniform doping on both sides of the abrupt
junction. The doping relation is ND = 50NA. The built-in potential barrier is
Vbi = 0.752V. The maximum electric field in the junction is Emax = 1.14×105 V/cm
for a reverse-bias voltage of 10V, T=300K.Determine:
a) NA, ND.
b) xp for VR = 10V .
c) C’j for VR = 10V .

7) An abrupt silicon pn junction at T= 300K is uniformly doped with NA = 1018 cm-3


and ND = 1015 cm-3, The pn junction area is 6×10-4 cm2 .An inductance of 2.2
millihenry is placed in parallel with the pn junction.
Calculate the resonant frequency of the circuit for reverse bias voltage of 10V.

8) A silicon p+n junction has for VR1 = 0, C1 = 1.14pF , for VR2 = 3V, C2 = 0.52 pF
and the cross-sectional area of the junction is 5×10-5 cm2. Show that if we plot 1/C2
versus VR , the slope of the curve can be used to find ND and the intersection with
the voltage axis yields Vbi .

9) The total junction capacitance of a one-sided silicon pn junction at T=300K is


measured at VR = 50mV and found to be 1.3 pF. The junction area is 10-5 cm2
and Vbi = 0.95V.
a) Find the impurity doping concentration of the low-doped side of the junction.
b) Find the impurity doping concentration of the higher-doped region.

10) We have a symmetric pn silicon junction (NA = ND = 1017 cm-3 ).If the electric
field in the junction at breakdown is 5×105 V/cm , what is the reverse breakdown
voltage in this junction?
11) A Si PN junction has its doping levels NA = 1017 cm-3, ND = 1015 cm-3. Explain the
formation of a space charge layer around the metallurgical junction . Sketch the
mobile carrier distribution throughout the whole crystal at thermal equilibrium.
Sketch further the space charge density ρ(x), the electric field E(x)and the potential
V(x) relative to the potential of the neutral p body. Calculate the width of the
transition region , given that ni at room temperature = 1.5 ×1010 cm-3.

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