Tikrit Journal of Pure Science Vol.

24 (3) 2019

Tikrit Journal of Pure Science

ISSN: 1813 – 1662 (Print) --- E-ISSN: 2415 – 1726 (Online)

Journal Homepage: http://tjps.tu.edu.iq/index.php/j

Study effect of window and BSF layers on the properties of the CZTS /
CZTSe solar cell by SCAPS–1D
Alaa H. Najim , Ayed N. Saleh
Department of physics , Collage of Education for pure science , Tikrit University , Tikrit , Iraq
https://doi.org/10.25130/tjps.v24i3.372

A r t i c l e i n f o. ABSTRACT
Article history:
-Received: 30 / 9 / 2018 T he solar cell CZTS / CZTSe was studied using SCAPS-1D ∗
-Accepted: 12 / 11 / 2018 computer simulator. It was noted that increasing the thickness of the
-Available online: / / 2019 absorber layer p-CZTSe from 250nm to 5μm leads to increase the IV
Keywords: SCAPS-1D, CZTSe, curve. thus increasing the values of Voc, Jsc, FF, 𝜂 up to 0.79 Volt, 39.35
CZTS, transition metal oxides mA/cm2 , 85.92% and 26.8% respectively, and optical properties of
(TMO), Back surface field (BSF), Quantum efficiency (QE) increased from 54% to 95%. The addition of
solar cell, conversion efficiency (𝜂), the transition metal oxides (TMO) to the cell showed that the oxides
fill factor (FF), Quantum efficiency (TiO2 , SnO2 , ITO, FTO) had the highest conversion efficiency among
(QE). the other oxides at 25.63% and this value increased by increasing the
thickness of the absorption layer to 29.32%. In addition to the BSF of the
Corresponding Author:
cell , p+ -eTdC, SnS, had the highest conversion efficiency of 33.75% and
Name: Ayed N. Saleh 29.64%, respectively. The thickness of the absorption layer increased the
E-mail: [email protected] conversion efficiency value from 13.16% at 250nm to 33.9 5% at 5µm
Tel: for p+ – CdTe, and from 10.27% to 29.89% for SnS, While the value of
the fill factor (FF) is reduced from 69.93% at 250 nm to 61.01% at 2 μm
for p+ – CdTe, and at most constant value at 85 % for SnS. By combining
these compounds from the transition metal oxides and the Back surface
field with the CZTS / CZTSe cell, Can get six cells with conversion
efficiency values ranging between 33.82% and 29.71%, and the change
in these values can affect the thickness by change the thickness of the
absorption layer. For quantum efficiency, their value is increased to
100% by the rise in the absorption layer thickness to 5μm because cells
are ideal .
Introduction
Solar cells are photovoltaic devices that convert and Sn, and the coefficient of absorption of the thin
electromagnetic radiation (i.e. light, including film CZTSSe is large enough ) > 104 𝑐𝑚−1 (.The
infrared, visible and ultraviolet radiation) from the highest efficiency of the CZTSSe cell achieved so far
sun to usable electrical energy. Solar cells are used in is 12.7% where it is still far from the theoretical
various terrestrial and space applications, as they can calculations. It is also required to understand and
convert solar energy directly into electrical energy, fully control the various manufacturing processes and
with good conversion efficiency, and can produce interactions in order to obtain high efficiency [3]. The
near-constant capacity, low operating costs and no aim of this study is to show a high efficiency of the
pollution in the environment [1]. The study of binary CZTS / CZTSe cell using the computer simulation
compounds has increased the creation of new method of solar cells in addition to studying the effect
materials for solar cells. The research has focused on of the transition metal oxides (TMO) on the cell and
thin film solar cells for high efficiency and relatively the extent of their interaction with different types of
low cost. Currently, the semiconductors these oxides to choose the best ones in terms of
Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) and their efficiency in addition to the use of different types of
alloys Cu2 ZnSn (S1−x Sex ) 4 with the direct power Back surface field (BSL) to see how they affect the
gap between (1-1.5 eV) attract attention [2]. Because cell.
they contain abundant and safe elements such as Zn

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Tikrit Journal of Pure Science Vol. 24 (3) 2019

Simulation process often in the factor as factor loss and therefore a high
The digital simulation technology of solar cell concentration of defects may reduce conversion
devices has proven over the years that it is an efficiency. The temperature that has been studied in
effective tool for studying and understanding the our simulation is 300 K . The QE and the I-V curve,
properties of solar cell devices such as optical, which include the values of Voc , Jsc and FF, Find
electrical and mechanical properties of complex solar them by equations (1, 2, 3, 4), respectively.[4]
𝐾𝐵 𝑇 𝐽𝑝ℎ
cell devices. It also helps reduce processing costs and 𝑉𝑜𝑐 = ln( + 1) …..(1)
𝑞 𝐽𝑜
time spent in manufacturing solar cell devices by
Where the Voc is the voltage in which no current
providing useful information on how to change
flows through the external circuit when the solar
production parameters to improve device
cell's ends are not connected to each other, and this
performance. And we deal in this study with SCAPS-
1D program, a one-dimensional solar cell simulation is the maximum voltage that the solar cell can
program developed in Electronics and information provide. 𝑉𝑜𝑐 is based on the 𝐽𝑝ℎ is Intensity of photo
systems (ELIS), the University of Gent in Belgium current of the cell and the saturation current Jo [5].
and freely available to the PV research community. 𝐽𝑠𝑐 (𝑉) = 𝐽(𝑉) + 𝐽𝑜 ) e 𝑞𝑉/𝑚𝐾𝐵𝑇 -1 (… )2(
Where the user can describe a solar cell as a stack up The short circuit current Jsc is the maximum current
to seven layers with different properties, such as generated by the solar cell when the solar cell ends
thickness, optical absorption, doping, density and are in contact with one another. while V is the voltage
distribution of defects. A number of common across the junction, T is the absolute temperature,
measurements can be simulated, such as I-V, QE, C- Jo is the saturation current during dark and J(V) is
V, and C-f. The program is available free of charge the net current density while m is the ideal factor
for various types of PV research. The SCAPS with values between 1 and 2 [5].
simulation relies on the solution of three 𝐽 ×𝑉 𝑃
semiconductor equations: the Poisson equation, the FF = 𝑚𝑝 𝑚𝑝 = 𝑚𝑎𝑥 ……..(3)
𝑉𝑜𝑐 𝐽𝑠𝑐 𝑉𝑜𝑐 𝐽𝑠𝑐
electron and hole continuity equation. SCAPS The fill factor FF which is the ratio between the
numerically solves these three partial differential maximum power ( 𝑃𝑚𝑎𝑥 = 𝐽𝑚𝑝 × 𝑉𝑚𝑝 ) generated by
equations, which approach the concentration of a solar cell and the output Voc and Jsc .
electrons and the electrostatic voltage as a function in 𝑃 𝐽 𝑉 𝐹𝐹
𝜂 = 𝑚𝑎𝑥 = 𝑠𝑐 𝑜𝑐 …..(4)
position x. The study focused on the design of the cell 𝑃𝑖𝑛 𝑃𝑖𝑛

as in Fig. 1 and using the absorption layer parameters While the conversion efficiency η is described as the
and the Back surface field listed in Table (1) and the ratio between the maximum power generated by the
BSF mentioned in Table (2). The cells have been cell and the power incident on it. The Pin radiation
studied are ideal cells without defects because value of 1000 W/m2 of the 1.5AM spectrum has
defects are usually added to increase electrical become a standard for measuring the conversion
conductivity or to control life span, but defects are efficiency of solar cells [4].

Figure (1) Stages of study and design of the cell CZTS / CZTSe
a)- HJ CZTS/CZTSe without WL and BSF b)- Solar cell with WL d)- Solar cell with BSF c)- Solar cell with WL and BSF
Table (1) Basic parameters of absorption layer and the transition metal oxides (TMO)

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Tikrit Journal of Pure Science Vol. 24 (3) 2019

Table (2) Basic parameters of the Back surface field (BSF)

Parameter lobmys MoS𝒆𝟐 Si SnS 𝐏+ -CdTe C𝒖𝟐 Te ZnTe
[20] [20] [21] [22] [22] [22]
)tinu(
Band gap 𝐸𝑔 (ev) 1.060 1.12 1.25 1.45 1.18 2.26
Electron affinity χ (ev) 4.372 4.05 4.20 4.28 4.20 3.65
Dielectric permittivity ϵ/ϵ𝑟 13.6 11.9 10 10 10 14
CB effective density of states 𝑁𝑐 (c𝑚−3 ) 2.2 E+18 2.8 E+19 2.2 E+18 7.9 E+17 7.8 E+17 7.8 E+17
VB effective density of states 𝑁v (c𝑚−3 ) 1.8 E+19 2.65 E+19 1.8 E+19 1.8 E+19 1.6 E+19 1.6 E+19
Electron thermal velocity 𝑉𝑛 (cm/s) 1.0 E+7 1.0 E+7 1.0 E+7 1.0 E+7 1.0 E+7 1.0 E+7
Hole thermal velocity 𝑉p (cm/s) 1.0 E+7 1.0 E+7 1.0 E+7 1.0 E+7 1.0 E+7 1.0 E+7
Electron mobility µ (c𝑚2 /v.s) 100 1450 25 110 500 100
n
Hole mobility µ (c𝑚2 /v.s) 25 500 100 70 100 10
p
absorption Coefficient α (𝑐𝑚−1 𝑒𝑣 1/2 ) 1 E+5 1 E+5 1 E+5 1 E+5 1 E+5 1 E+5

Results and discussion CZTS / CZTSe cell. The fourth and final stage
As shown in Figure (1) , the study of CZTS / CZTSe comprise of the CZTS / CZTSe cell with the best
has been divided into four main stages: the first phase transition layer of the transition metal oxides (TMO),
of a CZTS / CZTSe study is done on its own and as well as the best layer of BSF, to produce a high
without any other layers to determine its properties. specification cell and study it. This is the main
The second phase consists of a study of the cell and objective of the research. As shown in Table (3), the
the transition metal oxides used as a window layer to results were obtained after the thickness of the P-
determine their effect on the cell, the curve (I-V) and CZTSe absorption layer was fixed at 4μm, the
the quantitative efficiency (QE). The third phase thickness of the transition metal oxides (TMO) at 20
include a study of the effect of the BSF on the cell nm and the thickness of the BSF at 2μm.
and the extent to which the changes are met by the
Table (3) Results obtained at each stage of design of the cell CZTS / CZTSe
Layers )v(Voc Sc (mA/cm2)J FF)%( η)%(
n- CZTS / p-CZTSe 0.7860 37.905582 85.81 25.57
n-ZnO / n- CZTS / p-CZTSe 0.7860 37.799255 85.82 25.49
n-TiO2 / n- CZTS / p-CZTSe 0.7861 37.993512 85.82 25.63
n- V2O5 / n- CZTS / p-CZTSe 0.7871 38.058619 79.85 23.92
n-CdO / n- CZTS / p-CZTSe 0.7861 37.968833 85.82 25.61
n- SnO2 / n- CZTS / p-CZTSe 0.7861 37.989605 85.82 25.63
n- ITO / n- CZTS / p-CZTSe 0.7861 37.994480 85.81 25.63
n- AZO / n- CZTS / p-CZTSe 0.7861 37.961253 85.82 25.61
n-ZTO / n- CZTS / p-CZTSe 0.7861 37.961766 85.82 25.61
n- FTO / n- CZTS / p-CZTSe 0.7861 37.993475 85.82 25.63
n- CZTS / p-CZTSe / p-Si 0.7699 38.077684 85.53 25.07
n- CZTS / p-CZTSe / p-MoSe2 0.823 37.73007 83.84 21.58
n- CZTS / p-CZTSe / p-SnS 0.7911 43.936783 85.29 29.64
n- CZTS / p-CZTSe / p-CdTe 1.2280 44.933481 61.17 33.75
n- CZTS / p-CZTSe / p-𝐶𝑢2 Te 0.7435 40.090612 85.13 25.37
n- CZTS / p-CZTSe / p-ZnTe 44.961488 35.95
n-TiO2 / n- CZTS / p-CZTSe/ p-CdTe 1.2274 45.021609 61.20 33.82
n-TiO2 / n- CZTS / p-CZTSe/ p-SnS 0.7911 44.024867 85.29 29.71
n- SnO2 / n- CZTS / p-CZTSe/ p-CdTe 1.2276 45.016609 61.19 33.82
n- SnO2 / n- CZTS / p-CZTSe/ p-SnS 0.7911 44.020023 85.29 29.70
n- ITO / n- CZTS / p-CZTSe/ p-CdTe 1.2269 45.021486 61.23 33.82
n- ITO / n- CZTS / p-CZTSe/ p-SnS 0.7911 44.024899 85.28 29.70
n- FTO / n- CZTS / p-CZTSe/ p-CdTe 1.2276 45.021625 61.20 33.82
n- FTO / n- CZTS / p-CZTSe/ p-SnS 0.7911 44.024876 85.29 29.71
Table (3) shows that TiO2, SnO2, ITO, and FTO cell (TiO2 or SnO2 or ITO or FTO)/ CZTS / CZTSe/
compounds have the highest conversion efficiency (CdTe or SnS) was obtained to study the change in
among the other transition metal oxides (25.63%) thickness of the absorption layer CZTSe on the
and are therefore selected in the final cell design. properties curve (IV) and QE after having achieved
The compound (CdTe) has the highest conversion the efficiency value Conversion (𝜂) between (29.7%)
efficiency among the other back reflection layers and (33.82%).
(33.75%), but the FF value for this compound is Figure (2) present that the window layers (WL) have
small (61.17%). So SnS was selected with the no effect on the I-V properties curve except 𝑉2 𝑂5 ,
conversion efficiency value of 29.64% . Finally, the which has slightly changed the shape of the curve .

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Tikrit Journal of Pure Science Vol. 24 (3) 2019

And figure (3) illustrates that the addition of the Back

surface field (BSF) has caused a significant change in
the shape of the I-V curve and that CdTe has the
highest increase in the curve. The rise in energy
absorption can lead to the increases the rate of
generation of (electron-hole) pairs , And increasing
both the Short circuit current (Jsc) and the Open
circuit voltages (Voc), thus increases the I-V curve .

Figure (3) Effect of BSF on I-V curve

Figure (4) shows that the conversion efficiency value
(𝜂) is 23.9% at the energy gap (Eg) 2.3 eV for
component 𝑉2 𝑂5 , and it increases and constant at
approximately 26.5% with the increase in the energy
gap (Eg) value for the other window layer (WL)
components. As for the Back surface field (BSF), the
Figure (2) Effect of window layers (WL) on I-V curve
conversion efficiency value (𝜂) increases from 21.75
to 36% with the increase in the value of the energy
gap for it .

Figure (4) Effect of 𝐄𝐠 for WL and BSF layers on 𝜂

And for quantum efficiency, Figure (5) affirms that
the addition of transition metal oxides (TMO) as a
window layer (WL) did not affect the quantum
efficiency curve except with V2O5 and the small
wavelengths of the rest of the TMO , due to the
recombination process when occurring at the front
surface of the cell . Figure (6) remarks that the Back
surface field (BSF) has an effect on the value of
quantum efficiency, where its value decreases when
added. It is due to the recombination that occurs at
the back surface and the decrease in the absorption Figure (6) Quantum efficiency (QE) for various BSF
level at the long wavelength , And the short length of
The curve (IV) is one of the most important curves
the spread of the carriers.
that describes the performance of the solar cell, and
Figure (7) points out that the thickness of the
absorption layer has a significant effect on the shape
of this curve for CdTe, SnS as BSL and TiO2 , SnO2 ,
ITO and FTO as window layers. Increasing the
thickness of the absorption layer increases the curve
(IV) because the thickness of the absorption layer
increasing the absorption coefficient and raise the rate
of the generation of pair (electrons - hole), thus
increasing the short circuit current Jsc and the voltage
of the open circuit Voc, so increasing the curve (IV)
Figure (5) Quantum efficiency (QE) for various window
in table (3) there is no difference between TMO as
layers (WL)

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Tikrit Journal of Pure Science Vol. 24 (3) 2019

window layer at the same BSF. Therefore, the behavior of I-V curves having same way.

Figure (7) Effect of the thickness of the absorption layer CZTSe on the I-V of the cells
Figure (8) presents Voc values which are increased the value of Voc as equation (1) [19]. This is also the
by rise the thickness of the absorption layer (CZTSe). case with Jsc, where the rise is due to the absorption
This rise is due to the increase in the thickness of the of more photons. However, a linear increase in the
absorbent layer and the absorption of more optical Jsc value is observed when the absorption layer
photons rise the photo current, which contributes to thickness is less than 1.5 μm.
the generation of pairs (electron - hole) and will rise

Figure (8) Effect of the thickness of the absorption layer CZTSe on the Open circuit voltage (Voc) and the
short circuit current (Jsc) of cells
Figure (9), the value of the FF is reduced by absorption layer is less than 2μm and then begins
increasing the thickness of the absorption layer. This with a slow increase thereafter. So that the 𝜂 in CdTe
is due to increase bulk resistance of absorber layer (as BSF) is higher than in SnS and reach 34% at 5 µm
[23]. For conversion efficiency (𝜂), its value is thickness of absorption layer which can be explain by
significantly increased when the thickness of the absorbed more photons as clear in Fig (10) , Fig (11) .

Figure (9) Effect of the thickness of the absorption layer CZTSe on the fill factor (FF) and conversion
efficiency (𝜂) of the cells
Quantum efficiency is defined as the percentage the surface of the device and the quantity of the
between a number of electrons generated to a number quantum efficiency is one in the case of the ideal
of photons absorbed per unit of wavelength falling on binary, ie if a number of electrons generated is equal

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Tikrit Journal of Pure Science Vol. 24 (3) 2019

to a number of absorbed photons but naturally reflects

the light falling at the surface Semiconductor and not
all that remains absorbed within the depletion region
so the efficiency can be increased by reducing the
reflectivity of the surface with an anti-reflective
coating such as (SiO2) and the increase in the
survival time of the carriers by reducing the structural
defects and increase absorption within the depletion
area. The main key that plays a significant role in
Quantum efficiency is the absorption factor, which It
depends on the wavelength [24]. The increase in Figure (11) Quantum efficiency curve (QE) for
thickness of the absorption layer affects the value of WL/CZTS/CZTSe/SnS
Quantum efficiency. The higher thickness of the Conclusions
absorbent layer, greater the efficiency value, up to Throughout investigation, the use of software
100%, since the cell is ideal, as in Figs. (10) and (11). (SCAPS-1D) in the simulation process facilitates the
In terms of Quantum efficiency it is observed that process of manufacturing solar systems and reduce
photons with long wavelengths will absorb deeply the cost of the study significantly, The transition
into the back absorption layer p-CZTSe, so the metal oxides (TiO2 , SnO2 , ITO, FTO) showed a
Quantum efficiency of the electrons created there is slight increase in the efficiency (𝜂) for CZTS /
significant and depends on the effect of diffusion . CZTSe from 25. 57% before addition to 25.63% after
addition, and the major increase occurred to SnS and
CdTe as BSF layer where the efficiency value
increased to 29.64%, and 33.75% respectively. Also
increase in thickness of the absorption layer CZTSe
from the 250 nm to 3μm increasing the efficiency of
conversion (𝜂) significantly increased to 30% - 34%
(depending on the type of Back surface field) and
then start with the approximate stability with the
increase in thickness. though increasing the thickness
of the absorption layer which is working on a
significant can lead to the increase in the quantity of
Figure (10) Quantum efficiency curve (QE) for
efficiency (QE) and even closer to the value of 100 %
WL/CZTS/CZTSe/CdTe
.
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[19] Lin, p. (2014). Numerical Simulation of

STZC / STZCe ‫ على خصائص الخلية الشمسية‬BSF ‫دراسة تأثير الطبقة النافذة وطبقة‬
SCAPS - 1D ‫باستخدام‬
‫ عايد نجم صالح‬، ‫عالء حسين نجم‬
‫ العراق‬، ‫ تكريت‬، ‫ جامعة تكريت‬, ‫ كلية التربية للعلوم الصرفة‬, ‫قسم الفيزياء‬

‫الملخص‬
p- ‫ وقد تبين أن زيادة سمك طبقة اإلمتصاص‬,SCAPS-1D ‫ باستخدام المحاكي الحاسوبي‬CZTS/CZTSe ‫لقد تم دراسة الخلية الشمسية‬
،0.79 Volt ‫ 𝜂 حتى تصل إلى‬، FF ، Jsc ، Voc ‫ وبذلك تزداد كل من قيم‬I-V ‫ يعمل على زيادة المنحني‬5µm ‫ إلى‬250nm ‫ من‬CZTSe
‫ إلى‬54% ‫) فتزداد قيمتها من‬QE( ‫ أما الخواص البصرية المتمثلة بالكفاءة الكمية‬،‫ على التوالي‬26.8 % ،85.92 % ، 39.35 mA/cm2
‫) تعطي أعلى كفاءة تحويل‬OTI،OTI،SnO2 ،TiO2 ( ‫أن األكاسيد‬
ّ ‫) إلى الخلية تبين‬TMO( ‫ وبإضافة طبقة أكاسيد العناصر اإلنتقالية‬.95%
‫ وبإضافة طبقة اإلنعكاس‬.29.32% ‫ وتزداد هذه القيمة بزيادة سمك طبقة اإلمتصاص حتى تبلغ‬25.63% ‫بين األكاسيد األخرى حيث بلغت‬
‫ وزيادة‬، ‫ على التوالي‬29.64% ، 33.75% ‫ تعطي أعلى كفاءة تحويل حيث بلغت‬SnS ، p+ -eTTe ‫) للخلية وجد أن المركبات‬BSF( ‫الخلفية‬
‫ للمركب‬5µm ‫ عند السمك‬33.9% ‫ إلى‬250nm ‫ عند السمك‬13.16% ‫سمك طبقة اإلمتصاص يعمل على زيادة قيمة كفاءة التحويل من‬
61.01 ‫ إلى‬250 nm ‫ عند السمك‬69.93% ‫) من‬FF( ‫ بينما تقل قيمة عامل الملئ‬، SnS ‫ للمركب‬29.89% ‫ إلى‬10.27% ‫ ومن‬، p+ -eTTe
. SnS‫ للمركب‬2.75 µm ‫ عند السمك‬85.28 % ‫ إلى‬500 nm ‫ عند السمك‬85.39 % ‫ ومن‬، p+ -eTTe ‫ للمركب‬2 µm ‫ عند السمك‬%
‫ أمكن الحصول على ستة خاليا ذات قيم‬CZTS/CZTSe ‫وبجمع هذه المركبات من أكاسيد العناصر اإلنتقالية وطبقة اإلنعكاس الخلفية مع الخلية‬
‫ وبالنسبة للكفاءة الكمية فتبين أن قيمتها تزداد‬،‫ وتتغير هذه القيم بتغير سمك طبقة اإلمتصاص‬29.71% ‫ و‬33.82% ‫لكفاءة التحويل تتراوح بين‬
.‫ وذلك لكون الخاليا مثالية‬5µm ‫ عند السمك‬100% ‫بزيادة سمك طبقة اإلمتصاص حتى تصل إلى‬

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