EE531 Class Assignment II-1
EE531 Class Assignment II-1
Problem 1: A silicon bar is doped with acceptors as shown below. Assume the thermal equi-
librium situation, complete ionization and non-degenerated carrier static, and answer the fol-
lowing questions.
1017cm−3
log 10(NA(x))
ni=1010cm−3
106cm−3
a. Sketch the electron and hole concentration inside the silicon bar as a function of position.
b. Compute the position of Fermi level with respect the intrinsic fermi level at x = 0, x =
L/2 and x = L.
c. Using the above information, sketch band profiles versus position. Do not forget to
include Fermi energy levels.
d. Sketch the potential and electric field inside the silicon bar as a function of position.
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a. If the piece of semiconductor, already having doped NA = 1 × 1016 acceptor/cm3, is also
uniformly doped with ND = 2 × 1016 donor/cm3, what are the new equilibrium electron
and hole concentration at 300K.
b. Consistent with your answer to part 2A, what is the Fermi level position with respect to
the intrinsic level?
c. The same piece of semiconductor is optically excited such that 1019/cm3 electron-hole
pairs are generated per second uniformly in the sample. The laser causes the sample to
heat up to 450K. Find the new electron and hole concentration in the sample.
d. Find the quasi-Fermi level of the sample upon shining the light?
e. What is the change in the conductivity of the sample upon shining light ? Hint: Use
= J/E equation, where J is the current density, E is the electric field, and is the
conductivity.
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