Teo N- Te 1 er VesleslealeVecleele at Vasa n..] | Sl No. _| (2) inereases the minority _{(d) rectifier ote 14,SEMICONDUCTOR ELECTRONICS _ 14/10/2024 QUESTION ‘semiconducting device iy connected jn series circuit with baer and a revstange ‘current is found to pass through the eirenit, Ifthe polarity of the battery is reversed, hops to almost zero, The device may be (A) a potype semiconductor (b) an intrinsic semivonduetor (6) a pe junetion (a) an n-type semiconductor. ——_— Reverse bias applied to a junetion diode (a) lowers the potential barrier (b) raises the potential barrier (6) inereases the majority cartier eurent A p-n junction diode ean be used as (a) condenser (b) regulator (©) amplifier Ina junetion diode, the holes are due to (a) extra electrons, (b) neutrons (c) protons, (@) missing of electrons Application of a forward bias to a pon junction (a) widens the depletion zone (b) increases the potential difference across the depletion zone (©) increases the number of donors on the n side (d) decreases the electric field in the depletion zone The depletion layer in the p-n junetion region is caused by (a) drift of holes (b) diffusion of charge carriers (©) migration of impurity ions (@) Drift of electrons, Depletion layer consists of (a) mobile ions (b) protons (c) electrons: (@) immobile ions ‘The increase in the width of the depletion region in a p-n junction diode is due to (a) forward bias only (b) reverse bias only (c) both forward bias and reverse bias (@) increase in forward current Ifa small amount of antimony is added to germanium erystal (a) it becomes a p-type semiconductor (b) the antimony becomes an acceptor atom (6) there will be more free electrons than holes in the semiconductor (4) its resistance is increased Which one of the following statement is false? (a) Pure Si doped with trivalent impurities gives a p-type semiconductor (b) Majority carriers in a n-type semiconductor are holes.elnsemate, Om 14,SEMICONDUCTOR ELECTRONICS anion (c) Minority carriers ia pelype semiconductor are electrons. {) The resistance of intrinsic semiconductor decreases with increase of temperature \ pon photodiode is made of « material with a band yap of 2.0 eV. Caleutate the minimum fiequeney of the radiation that ean be absorbed by the anata An LUD is constructed fron a pn junetion dlod using GAs? The energy gap is 1 eV. Caleulte the wavelength of the tight emit by the LED, _ Carbon, silicon and germanium atoms have four valenee electons each, Their valence and ‘conduction bands are separated by energy band gaps represented by (F4)C; (p81 and (F)Ge respectively, Arrange their bund gap energy ae wing onder. ‘On what factors on which the barrier potential ofa pn junction depends? Cand Si both have sue lattice structure; having 4 bonding electrons in each, However, Cis insulator whereas Si is intrinsic semiconductor. ingulators with examples. Consider a thin p-type silicon (p «quantity of Pentavetent impurity, part ofthe p-Si wafer ean be converted into n-Si, There are several processes by which a semiconductor ean be formed. The wafer now contains p- region and n-region and a metallurgical junetion between p- and n- region, Two important processes occur during the formation ofa p-n junetion: diffusion and drift, We know that in ‘an n-type semiconductor, the concentration of electrons (number of electrons per unit ‘volume) is more compared to the concentration of holes, Similarly, ina p-type semiconductor, the concentration of hols is more than the concentration of electrons. During the formation of p-n junction, and due to the concentration gradient across p-, and n= sides, holes diffuse from p-sice to n-side (p —»n) and electrons diffuse from nse to pside (np). This motion of charge carries gives rise to diffusion current across the junction. (How can a pure semiconductor be converted into n-type semiconductor? (ii) How ean a pure semiconductor be converted into P-type semiconductor? (iii) What type of behaviour a Pure Si exhibit at absolute zero temperature? {iv) What is the majority change carries in n-type semiconductor We Teasons to support your answer. et Draw the energy band diagram to distinguish between Conductors, semiconductors and | 3 iconductor water, By adding precisely a small 4 i (a)Name the device which is used to convert AC into DC. {byDrav the cicuit diagram of fll wave rectifier and indeate its input and output wave forms. ()What isthe difference between half and full wave rectifier {6) [fan input AC signal of frequency S012 fed to all and full wave rectifier, then calculate the frequency of output signal in each case. aTAo ve Bl. debs ae 93. [6.69 a3 Ta = 04433 x9 i es Wh > 5 xioltHy A. Af. 2 6-8 ee eaeat Jiaxtaxig'! . Kaye! 4 ieee u 2 Rect Colour re Fi Ge = 6.15 ev Si. pgtev (Ile? CEg) 32> (Es) Gre.“oof fa hen ab Iria iio ott ad a valle thas tron ath cae fh nba tam a ns, Conduclor Lenaulaln a oe eo 2 london” Bisod 1s traply § = [ras] vlan baerel i. comp ladle fill. ve 4 | Pemucomerae ee «Th nuipy Guo Ly Ces) uty bat — wla Se oe ee in adelicg " Ahduabed singed, e 7 Tin tulals _ jv). Elodie. a It.