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Experiment 10

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Zulqurnan Anjum
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26 views

Experiment 10

Uploaded by

Zulqurnan Anjum
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Experiment 10

ENHANCEMENT TYPE MOSFET CHARACTERISTICS


AIM:
To study transfer and output characteristics of an n-channel
Enhancement type Metal Oxide Semiconductor field effect
Transistor (MOSFET) in Common-source configuration.

APPARATUS:

S.No Name of the Apparatus Range Quantity


1 MOSFET (NDS7002A) 1
2 Resistors 100KΩ, 100Ω 1
3 Regulated Power Supply (0-30)V DC 1
4 Bread Board 1
5 Digital Ammeter (0-200)mA 1
6 Digital Voltmeter (0-20)V DC 2
7 Connecting Wires As Required

THEORY:
The Enhancement Mode Metal Oxide Semiconductor Field Effect Transistor (EMOSFET) is a three-
terminal Device viz. Source (S), Gate (G) and Drain (D). The EMOSFET is a voltage controlled device.
The EMOSFET can be operated in the enhancement mode only. The EMOSFET has no physical channel
from source to drain since the substrate extends completely to the SiO 2 layer.
By the application of gate–source voltage (VGS) of proper magnitude and polarity the device can be made
operating. The use of VGS induces an n-channel just below the gate terminal and this made the device
operating.
The minimum value of VGS of proper polarity that turns on the EMOSFET is known as Threshold
Voltage (VGS (Th)).

For the n−channel EMOSFET : +VGS⩾VGSthVGS⩾VGSth


For the p−channel EMOSFET : −VGS⩾VGSthVGS⩾VGSth
Types of EMOSFET
 N-channel Enhancement MOSFET
 P-channel Enhancement MOSFET
Schematic Symbol of P-channel EMOSFET
Schematic Symbol of N-channel EMOSFET

Operation of EMOSFET
When VGS = 0 V, there is no channel connecting the source and drain. The p-type substrate has only a
small number of thermally produced free electrons (minority charge carriers) so the drain current is zero.
For this reason, the EMOSFET is generally OFF.

Now, when the gate is made positive, it attracts free electrons from p–substrate. The free electrons combine
with the holes just below the SiO2 layer. If VGS is positive enough, all the holes touching the SiO 2 layer are
filled and remaining free electrons start flowing from source to drain. This is same as creating a thin layer
of n–type material below the SiO2 layer, i.e., there is an induced n-channel through which the electrons flow
takes place. Hence the EMOSFET is turned ON and drain current starts flowing from source to drain.

Drain Characteristics of EMOSFET


The drain characteristics is the graph between drain current and drain–source voltages for the
various positive values of VGS. From the graph, most of the part of the curve is horizontal, showing
constant drain current. Hence in this part of curve the EMOSFET behaves as a constant current
source.
Transfer Characteristics of EMOSFET
The transfer characteristics of EMOSFET is the curve plotted between the drain current (I D) and
gate-source voltage (VGS).

From this curve, it can be seen that, when V GS is less than VGS(th), there is no induced channel and the
drain current (ID) is zero. When VGS is made equal to VGS(th), the EMOSFET is turned ON and the
induced channel conducts from source to drain. The further increase in the value of V GS beyond
VGSth increases the width of induced channel and hence, the drain current.
Transconductance Equation of EMOSFET
The equation for transconductance of EMOSFET (for VGS > VGS(th)) is given by
ID=K(VGS−VGS(th))2ID=K(VGS−VGS(th))2
The constant K depends upon a particular EMOSFET and its value can be determined from the
equation
K=ID(on)(VGS(on)−VGS(th))2K=ID(on)(VGS(on)−VGS(th))2
The values of ID(on) and VGS(on) can be obtained from the data sheet for an EMOSFET.

CIRCUIT DIAGRAM:
PROCEDURE:
1. All the connections are made as per the circuit diagram.
2. To plot the drain characteristics, keep VGS constant at 5V.
3. Vary the VDD and observe the values of VDS and ID.
4. Repeat the above steps 2, 3 for different values of VGS at 10V and 15V.
5. All the readings are tabulated.
6. To plot the transfer characteristics, keep VDS constant at 0.5V.
7. Vary VGG and observe the values of VGS and ID.
8. Repeat steps 6 and 7 for different values of VDS at 1V and 1.5V.
9. The readings are tabulated.
OBSERVATIONS:

(i) DRAIN CHARACTERISTICS:

S.No VGS = 0V VGS = 5V VGS = 10V VGS = 15V

VDS (V) ID (mA) VDS (V) VDS (V) VDS (V) ID (mA) VDS (V) ID (mA)

(ii) TRANSFER CHARACTERISTICS:

S.No VDS =0.5V VDS=1V VDS =1.5V

VGS (V) ID (mA) VGS (V) ID (mA) VGS (V) ID (mA)


MODEL GRAPH:

(i) DRAIN CHARACTERISTICS:

(ii) TRANSFER CHARACTERISTICS:


PRECAUTIONS:

1. While doing the experiment do not exceed the ratings of the FET. This may lead
to damage the FET.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.
4. Make sure while selecting the Source, Drain and Gate terminals of the FET.

VIVA QUESTIONS:
1. What are the advantages of FET?
2. Different between FET and BJT?
3. Explain different regions of V-I characteristics of FET?
4. What are the applications of FET?
5. What are the types of FET?
6. Draw the symbol of FET.
7. What are the disadvantages of FET?
8. What are the parameters of FET?

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