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Unit-1 MWA RSD

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15 views82 pages

Unit-1 MWA RSD

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saralabitm
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School of Electronics and Communication Engineering

Course: Microwave and Antennas


Course Code: B20EN0701

Prepared by,

Prof. Ravi Shankar D.


School of ECE
REVA University

1
MICROWAVES AND ANTENNAS B20EN0701

UNIT 1 SYLLABUS:
Microwave Waveguides:
 Concept of Mode
 TEM Wave: Criteria for TEM Wave Propagation in Transmission Lines
 Definition of the waveguide, Construction of the waveguide
 Properties of the Waveguide
 Modes of Rectangular Waveguide(RWG)
o Transverse Electric Mode(TE Mode):
 Definition, Field Equations
 Various Modes of TE Mode
 Dominant Mode of TE Wave
 Propagation constant inside the waveguide
 Cutoff frequency
 Cutoff wavelength
 Phase Velocity
 Group Velocity
 Guide Wavelength
 Numerical
o Transverse Magnetic Mode(TM Mode):
 Definition, Field Equations
 Losses associated with the micro waveguide
Microwave Passive Components and Active Devices:
 Microwave Network
o Difference between Low Frequency and High Frequency Network
o Reason for not using the Z/Y Parameters
o Two Port Microwave Network: S-Parameters
o Performance parameters of Microwave Network
o Properties of S-matrix
 Wave Guide Tees
o H-Plane Tee : Definition, Diagram, S-Matrix, Special case
o E-Plane Tee: Definition, Diagram, S-Matrix
o E-H Plane Tee: Definition , Diagram, S- Matrix Derivation
 Directional Coupler:
o Diagram, Working Principle, Two Hole Directional Coupler,
Performance Parameter

PROF. RAVI SHANKAR D. 2


MICROWAVES AND ANTENNAS B20EN0701

o Applications of Directional coupler


 Cavity Resonator: Diagram, Explanation, Application
 Gunn Diode:
o Definition
o Features of Gunn Diode
o Structure, Symbol
o V-I Characteristics
o Gunn Effect
o RWH Theory
o Modes of Negative Resistance Region(N-Type Mode Vs. S-Type Mode)
o Two Valley Model Theory
 Parametric Amplifier
o Circuit
o Explanation
o Applications
 PIN Diode: Structure, Equivalent Circuit, Rj s. Cj curve, Explanation
 Power Divider: Diagram, Explanation
 IMPATT Diode: Structure, Features, Applications
 Schottky Diode: Construction details, Features, Applications

PROF. RAVI SHANKAR D. 3


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PIN Diode
Definition:
 The diode in which the intrinsic layer of high resistivity is sandwiched between the P
and N-region of semiconductor material such type of diode is known as the PIN diode.
 The high resistive layer of the intrinsic region provides the large electric field
between the P and N-region.
 The electric field induces because of the movement of the holes and the electrons. The
direction of the electric field is from n-region to p-region.

 The diode consists the P-region and N-region which is separated by the intrinsic
semiconductor material.
 In P-region the hole is the majority charge carrier while in n-region the electron is the
majority charge carrier.
 The intrinsic region has no free charge carrier. It acts as an insulator between n and
the p-type region. The i-region has the high resistance which obstructs the flow of
electrons to pass through it.

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