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27 views

SiC - Power Device

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qzqn6b6t
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© © All Rights Reserved
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SNDM Observation of the Dopant Distribution in a SiC Power Device

SHEET No. 008


Cross-section
Instruments: Environment control AFM AFM5300E
Scanning Nonlinear Dialectric Microscope HS-SNDMⅡ

Introduction
Until now, the dopant distributions in semiconductor devices was mainly evaluated with scanning
spread resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). Recently, the
technique of scanning nonlinear dielectric microscopy (SNDM), as shown in figure 1, was
developed.[1]

SNDM is a measurement mode that differentiates p-type and n-type dopants and acquires the
dopant concentration from the image contrast. Similar to the SSRM, the performance of the
SNDM increases further in a high vacuum surrounding. Low dopant concentrations of 1013/cm3 to
1014/cm3 as well as high accuracy C-V curves can be measured.[2, 3]

In this data sheet, the SNDM was applied to a SiC device as an application example of a wide-
gap semiconductor. The observation results of its two dimensional dopant distribution are
presented here.

[1] Cho, Y. et al., “Scanning nonlinear dielectric microscope,” Rev. Sci. Instrum., 67, 2297–2303, 1996. ∂C /∂V
[2] Yamaoka et. al., “Nano-scale physical property observations by SPM: Electromagnetic measurements in +
vacuum and SPM/SEM observations”, The 34th Annual NANO Testing Symposium, 13-18, 2014. p-type
[3] Jing-jiang Yu et al., "Environmental control scanning nonlinear dielectric microscopy measurements of p-n
0
structures, epi-Si Wafers, and SiC crystal defects", ISTFA 2015: Conference Proceedings, 341-348, 2015.
n-type
500nm
※ We would like to express our sincere gratitude to Prof. Yasuo Cho of Research Institute of Electrical -
Communication at Tohoku University (the inventor of SNDM) for his guidance to develop the SNDM product. Figure 1: SNDM principle and observation result of a Si MOS FET
Results
In figure 2 the SNDM observation results of a SiC Power MOS FET in a vacuum are shown. The dopant concentration distribution corresponds to the device
structure. Furthermore, the C-V curves at 10 points crossing the pn-junction from p-type area to n-type area were measured. The state of the depletion layer
modulation depending on the dopant concentration and type could be clearly obtained due to the DC voltage sweep.

Figure 2: (a) In vacuum SNDM observation result of a SiC Power MOS FET and cross-section signal strength profile line
(b) Observation results in vicinity of the pn-junction (c) ∂C/∂V-V curves in a vacuum, measurement results of C-V curves

【Complementary information】 The C-V curves of the SNDM observation are calculated as the integral of the ∂C/∂V-V curves obtained by the DC voltage sweep. As every point shows
clearly its characteristics, the typical response of a depletion layer can be identified from the shape of the curves. Furthermore, these ∂C/∂V-V curves are more stable and accurate
when measured in a vacuum than in air. [2]
Authors: Hitachi High-Tech Science Analytical Application Engineering Section Tokyo 2 T. Yamaoka

Head Quarter Business department, Shimbashi 1-24-14, Minato-ku, Tokyo 105-0003 Tel.: +81-3-6280-0062

No HTD-AFM-E008

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