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12 views

Inverter Module

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naileamman14
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© © All Rights Reserved
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Mosfet(IRF540):

MOSFET stands for metal-oxide-semiconductor field-effect transistor. It is a field-effect transistor


with a MOS structure. Typically, the MOSFET is a three-terminal device with gate (G), drain (D) and
source (S) terminals. Current conduction between drain (D) and source (S) is controlled by a voltage
applied to the gate (G) terminal. MOSFETs compare favorably with bipolar transistors in terms of
relatively high-speed and low-loss operation. There are P type and N type by channel polarity, and
there are enhancement type with normally off (gate voltage 0 V off) and depletion type with
normally on (deactivated with gate voltage 0 V) by control method. Enhancement type is popular.

The general characteristics of power MOSFETs are listed below.

(1) Basically, MOSFETs are majority-carrier devices and operationally different from bipolar
transistors that are minority-carrier devices.

(2) While bipolar transistors are current-controlled devices, MOSFETs are voltage-controlled devices
that are controlled by gate-source voltage.

(3) Since MOSFETs are majority-carrier devices, they do not suffer delay due to the carrier storage
effect, making high frequency switching possible.

(4) In bipolar transistors, current concentrates in the high voltage region, making them vulnerable to
junction destruction due to secondary breakdown. Operating conditions are de-rated as necessary to
prevent junction destruction. In contrast, power MOSFETs are much more immune to secondary
breakdown and therefore more rugged. However, the electrical characteristics of recent MOSFET
devices should be carefully examined as some of them are vulnerable to secondary breakdown.

(5) Since power MOSFETs have a positive temperature coefficient of on-state resistance, RDS(ON) at
high temperatures should be considered during thermal design.

Third generation power MOSFET provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness

CD4047:

The CD4047 is a high voltage multivibrator IC, that can operate in both Monostable and Astable
mode. The IC requires an external resistor and capacitor to set the width of output pulse in
monostable mode and the frequency of output pulse in Astable Mode. The monostable mode has
positive and negative edge trigger with programmable pulse width. The Astable mode provides good
frequency stability at 50% duty cycle. The CD4047 IC can operate on 5V, 10V, 15V or even at 20V. The
output of the IC always comes in TTL which makes it easy to work with other TTL devices
and microcontrollers. The IC is commonly used in frequency discriminators, timing circuits ,time-
delay applications ,envelope detection, frequency multiplication and division.

1N4007 DIODE:

1N4007 is a rectifier diode, designed specifically for circuits that need to convert alternating current
to direct current. It can pass currents of up to 1 A, and have peak inverse voltage (PIV) rating of 1,000
V.

 Maximum Recurrent Peak Reverse Voltage 1000V

 Maximum RMS Voltage 700V


 Maximum DC Blocking Voltage 1000V

 Average Forward Current: 1.0A

 Peak Forward Surge Current: 30A

 Maximum Instantaneous Forward Voltage: 1.0V

 Maximum DC Reverse Current At Rated DC Blocking Voltage: 5.0µA @ 25°C

 Typical Junction Capacitance: 15pF

 Typical Reverse Recovery Time: 2.0us

 Mounting Type: Through Hole

 Operating Temperature: -55°C ~ 150°C

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