ESE - DEC2020 - SOE - BTech ECE - SemIII - ECEG2011 - ANALOG ELECTRONICS I
ESE - DEC2020 - SOE - BTech ECE - SemIII - ECEG2011 - ANALOG ELECTRONICS I
Enrolment No:
SECTION A
S. No. Marks CO
Q1 Fill in the Blanks
1.a The input Impedance of amplifier should be very ……………………………as
possible.
1.b Emitter follower configuration has………………..voltage gain. 5 CO1
1.c CE configuration output is differ by ………………………………. Phase shift.
1.d For switching action of BJT the biasing region of the BJT should be
in……………………….. region
Q2 For the circuit shown in fig 1, determine V1 and V2
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Fig. 1
Q3 Define the thermal runaway condition in BJTs and why FET are more preferable
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over BJTs.
Q4 Why the DC operating point is preferred to get biased at middle of DC load line. 5 CO1
Q5 Choose the correct answer (MCQ type):
5.1 The action of JFET in its equivalent circuit can best be represented as a
A. Current controlled Current source 5 CO2
B. Current controlled voltage source
C. Voltage controlled voltage source
D. voltage controlled current source
5.2 The current gain of a bipolar transistor drops at high frequencies because of
A. Transistor capacitances
B. High current effects in the base
C. Parasitic inductive elements
D. The early effect
5.3 Most of the linear ICs are based on the two-transistor differential amplifier
because of its
A. Input voltage dependent linear transfer characteristic
B. High voltage gain
C. High input resistance
D. High CMRR
Q6 How temperature affects the performance of the Amplifier and what is the role of
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different biasing configuration used for amplification network.
SECTION B
Q7 Compute the Gate capacitance CG, gate to drain capacitance CGD, gate to source
capacitance for the Fig. 1. Consider the overlapping capacitances CGSO = CGDO =
5 fF/m2 .What will be effects on these capacitances when horizontal dimension are
scaled by 1/4 and vertical dimensions by 1/3.
Ld = 100 nm
S D
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m
0n
75
xd = 4nm xd = 4nm
Fig. 1
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Fig. 3
Q10 (a) Determine the operating point of the given amplifier as shown in Fig 4 under DC
analysis? Evaluate the following performance parameters of the given CE amplifier
below
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(b) Find Zi and Zo.
(c) Calculate Av and Ai.
Fig. 4
Q11 Differentiate between Enhancement type and Depletion type MOSFET? Why it is
considered high input impedance for the amplification action and how MOSFETs are 10 CO4
suitable for this action.
SECTION-C
Q 12 Consider the cascade amplifier configuration for Common emitter of figure given
below, determine the following? :
(a) The loaded voltage gain of each stage.
(b) The total gain of the system, Av.
(c) The total gain of the system, Ai.
20 C04