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Analog Lect. 17

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Analog Lect. 17

Uploaded by

keshavsamdani3
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© © All Rights Reserved
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EE204 (Analog Circuits)

Keshav Samdani
22B3952
Last time we were done till MOSFET-Operation, Pinch off point, Comparison
between Bipolar Junction Transistor(BJT) and MOSFET and Chanel Length
Modulation Effect and now we’ll move on to MOSFET Body Effect,
Subthreshold Condition, PMOS transistor, Transconductance, MOS Small Signal
Model(AC Model), Calculation of Output Resistance.

MOSFET Body Effect:


The MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) body effect,
also known as the substrate bias effect, is a phenomenon that occurs in
MOSFET devices due to the influence of the semiconductor substrate on the
transistor's threshold voltage and its overall operation. It is an important
consideration in the design and analysis of MOSFET circuits. The body effect
can be formally explained as follows:
1. MOSFET Structure: A MOSFET is a three-terminal semiconductor device
with a gate (G), source (S), and drain (D) terminals. It is typically
fabricated on a silicon substrate, and it consists of a metal gate separated
from the silicon channel by a thin insulating oxide layer (typically silicon
dioxide).
2. Threshold Voltage (Vth): The threshold voltage (Vth) is the minimum
voltage applied to the gate terminal that allows the MOSFET to conduct
current from the source to the drain. It is a critical parameter in
determining the MOSFET's on/off state.
3. Body Effect Mechanism: The body effect occurs because the silicon
substrate, which is typically connected to the source terminal, can
influence the threshold voltage. When a positive voltage is applied to the
gate (relative to the source), it creates an electric field that controls the
flow of charge carriers (electrons or holes) between the source and
drain.
The threshold voltage (Vth) of the MOSFET is formally described as: Vth = Vth0
+ γ(√|2ΦF + VSB| - √2ΦF)
Where:
 Vth is the threshold voltage with body effect.
 Vth0 is the threshold voltage without body effect (for VSB = 0).
 γ is the body effect parameter.
 ΦF is the Fermi potential of the substrate.
 VSB is the voltage between the source and the substrate.
4. Impact of Body Effect: The presence of a non-zero VSB (voltage between
the source and substrate) in the MOSFET structure affects the threshold
voltage. In most cases, a positive VSB raises the threshold voltage,
making it more difficult to turn the MOSFET on. Conversely, a negative
VSB reduces the threshold voltage, making it easier to turn the MOSFET
on.
Subthreshold Condition:
The subthreshold condition, in the context of semiconductor devices like
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), refers to the
operating regime in which the transistor is in a state of weak or subthreshold
conduction.
MOSFET and Its Operating Regimes: A MOSFET is a three-terminal
semiconductor device with a gate (G), source (S), and drain (D) terminals. It
operates in different regions or regimes, including the subthreshold regime.
1. Threshold Voltage (Vth): The threshold voltage (Vth) is the minimum
gate-source voltage required to turn on the MOSFET, allowing current to
flow from the source to the drain. Below the threshold voltage, the
MOSFET is in the subthreshold region.
2. Subthreshold Condition: The subthreshold condition is characterized by
the following formal aspects:
 Voltage Levels: The gate-source voltage (Vgs) is less than the
threshold voltage (Vth). Mathematically, Vgs < Vth.
 Conduction: In the subthreshold regime, the MOSFET is operating
with very low levels of gate-source voltage, and it conducts
current at a significantly weaker level compared to when it is fully
turned on.
 Exponential Behavior: In this regime, the current between the
source and drain is described by an exponential relationship with
respect to the gate-source voltage and other device parameters.

equation, typically as: I_d ∝ e^(k * (Vgs - Vth) / (n * VT)) Where:


The drain current (I_d) can be described by the subthreshold

 k is a technology-specific constant.
 VT is the thermal voltage (k * T / q), where k is Boltzmann's
constant, T is temperature in Kelvin, and q is the elementary
charge.
 n is the subthreshold slope factor.
Here's an explanation of the key characteristics and operation of a PMOS
transistor:
1. Structure:
A PMOS transistor consists of three terminals: the source (S), the drain (D),
and the gate (G). It is fabricated on a silicon substrate. The source terminal is
connected to a supply voltage (usually VDD or a positive voltage), and the drain
terminal is connected to the load. The gate terminal controls the flow of
current between the source and drain.

2. Operation:
PMOS transistors operate on the principle of an electric field effect. The
primary component in the transistor is a p-type silicon channel between the
source and drain terminals. When a voltage is applied to the gate terminal
(VGS), it creates an electric field that controls the flow of charge carriers (holes)
in the channel.

- OFF State: In the OFF state, the voltage on the gate terminal is lower than
the source terminal (VGS < 0). This creates a depletion region that prevents the
flow of holes between the source and drain. In this state, the PMOS transistor
acts as an open switch, allowing negligible current to pass between the source
and drain.

- ON State: To turn the PMOS transistor ON, a lower voltage is applied to the
gate terminal compared to the source (VGS > 0). This reverses the electric field,
reducing the width of the depletion region and allowing holes to flow from
source to drain. The transistor is said to be in the ON state, and it acts as a
closed switch, conducting current between the source and drain.

3. Symbol:
The symbol for a PMOS transistor consists of a circle at the gate terminal,
which represents the p-type material, and an arrow pointing away from the
gate terminal, indicating the direction of current flow when the transistor is
ON. The source is typically at the top, and the drain is at the bottom in the
symbol.
4. Voltage Levels:
In PMOS transistors, a higher gate-source voltage (VGS) results in the
transistor being in the OFF state, while a lower VGS turns it ON. This is opposite
to NMOS transistors, where a higher gate-source voltage turns the transistor
ON.

5. Complementary Pair:
PMOS transistors are often used in combination with NMOS transistors to
create CMOS (Complementary Metal-Oxide-Semiconductor) logic circuits. In
CMOS, PMOS transistors are used for logical "0" (when they are ON), and
NMOS transistors are used for logical "1" (when they are ON), allowing for
efficient and low-power digital logic design.

Transconductance:
Transconductance in the context of a Metal-Oxide-Semiconductor Field-Effect
Transistor (MOSFET) is a crucial parameter that characterizes the relationship
between the small-signal changes in the gate-source voltage (Vgs) and the
resulting change in the drain current (Id) ,transconductance in a MOSFET can
be defined as follows:
Transconductance (gm) for a MOSFET is a measure of the change in drain
current (Id) with respect to a small-signal change in the gate-source voltage
(Vgs), typically represented by the following equation:
gm = ΔId / ΔVgs
Where:
- gm represents the transconductance in Siemens (S).
- ΔId represents the change in drain current in Amperes (A).
- ΔVgs represents the small-signal change in gate-source voltage in Volts (V).
Transconductance is an essential parameter for characterizing the amplification
properties of a MOSFET in its small-signal, or linear, region of operation. It
reflects how changes in the gate-source voltage influence the current flowing
between the drain and source terminals, which is essential in designing and
analyzing MOSFET-based amplifiers and electronic circuits.

- Output Conductance (gds): The small-signal model includes the output


conductance, which relates the change in drain voltage (ΔVds) to the change in
drain current (ΔId). It is given by:

gds = ΔId / ΔVds

2. Linearization around DC Operating Point: The small-signal model assumes


that the MOSFET operates around a DC bias point, and all quantities are
linearized around this point. This involves small-signal variations (Δ)
superimposed on top of the DC operating values.
3. Components of the Model:

- gm: Transconductance represents the amplification factor and is analogous


to the small-signal transconductance of the MOSFET. It's dependent on the
device's transconductance parameter (gm0) and can be different for different
types of MOSFETs (NMOS or PMOS).

- gds: Output conductance represents the output impedance of the MOSFET


and typically appears in parallel with the drain-source path in the small-signal
model. It's related to the device's early voltage (Early effect) and depends on
the MOSFET's channel length and width.

- Cgd, Cgs, Cgb: Small-signal capacitances between the gate and other
terminals (drain, source, bulk) are included in the model to account for the
capacitive effects in high-frequency applications.

4. Equivalent Circuit: The small-signal model often includes an equivalent


circuit with current sources, resistors, and capacitors that represent the
behavior of the MOSFET in the small-signal AC domain. The model may include
components like the transconductance amplifier, output conductance, and
capacitors at the gate, drain, and source terminals.

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