LiU-ITN-TEK-A-15/042-SE

Highly Linear 2.45 GHz Low-Noise Amplifier

Design

Atchaiah Bandla

2015-06-17

Department of Science and Technology Institutionen för teknik och naturvetenskap

Linköping University Linköpings universitet
SE–60174 Norrköping, Sweden 601 74 Norrköping

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 LiU-ITN-TEK-A-15/042-SE

Highly Linear 2.45 GHz Low-Noise Amplifier

Design

Examensarbete utfört i Elektroteknik

vid Tekniska högskolan vid
Linköpings universitet

Atchaiah Bandla

Handledare Adriana Serban

Examinator Shaofang Gong
Norrköping 2015-06-17

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Linköping University
Electronic Press

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© Atchaiah Bandla.

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Abstract
One critical component of the communication receiver of front-end system is the low-noise amplifier
(LNA). For good sensitivity and dynamic range, the LNA should provide a low noise figure and maximum
attainable power gain. Another concern is the linearity of the LNA. Strong signals produce intermodulation
products in a frequency band close to the operating frequency that might affect the performance of the
receiver. In many cases, the intermodulation products can be reduced by increasing the current through the
active device. Hence, a trade-off between power consumption and linearity must be considered when
designing the LNA. The thesis includes the bias network design, stability analysis, matching network design
and layout design of the LNA RF module with layout simulation. The simulation has been performed using
Advanced Design System (ADS) simulation software. After implementation of LNA on a PCB, the LNA
is measured with the help of the power supply unit and vector network analyzer. The proposed design aim
is to provide a low noise figure (NF) and high gain while maintaining the low power consumption.

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Acknowledgement
This report is subjected to a master thesis for requirement of master degree in wireless networks and
electronics at ITN, Linköping University.
First of all, I would like to thank my supervisor, Dr. Adriana Serban and my examiner, Prof. Shaofang
Gong, for their technical help, guidance, support and suggestions, throughout the study period. Special
thanks to the Ionut-Alexandru and Gustav Knutsson for their help to soldering and evaluate the LNA
through measurements.
Finally, I would like to thank my parents for their encouragement ans support.

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Table of Contents

1. INTRODUCTION ..............................................................................................................................................1
1.1. BACKGROUND AND SPECIFICATIONS ............................................................................................................1
1.2. OBJECTIVES ..................................................................................................................................................1
1.3. OUTLINE OF THE THESIS ...............................................................................................................................2
2. THEORETICAL BACKGROUND...................................................................................................................3
2.1. ISM-BAND....................................................................................................................................................3
2.2. RADIO RECEIVER BASICS ..............................................................................................................................3
2.3. NETWORK ANALYSIS ....................................................................................................................................4
2.3.1. Two-Port Networks..............................................................................................................................4
2.3.2. S-Parameters .......................................................................................................................................5
2.4. TYPES OF NOISES ..........................................................................................................................................6
2.4.1. Thermal Noise .....................................................................................................................................6
2.4.2. Shot Noise ............................................................................................................................................6
2.4.3. Flicker Noise .......................................................................................................................................7
2.5. NOISE FIGURE ...............................................................................................................................................7
2.6. LOW-NOISE AMPLIFIER ................................................................................................................................8
2.6.1. Amplifier Design Procedure ................................................................................................................8
2.7. STABILITY ANALYSIS....................................................................................................................................8
2.8. INPUT AND OUTPUT MATCHING NETWORK ..................................................................................................9
2.9. TRANSISTOR MODEL .....................................................................................................................................9
2.10. QUIESCENT-POINT SELECTION .................................................................................................................... 10
2.11. DC BIASING NETWORK............................................................................................................................... 10
2.12. MATCHING NETWORK WITH LUMPED COMPONENTS .................................................................................. 10
2.13. MATCHING NETWORK WITH DISTRIBUTED COMPONENTS .......................................................................... 10
2.14. HARMONIC BALANCE SIMULATION ............................................................................................................ 11
2.15. DYNAMIC RANGE ....................................................................................................................................... 12
2.16. INTERMODULATION DISTORTION ................................................................................................................ 12
2.17. GAIN COMPRESSION ................................................................................................................................... 12
2.18. LINEARITY ANALYSIS ................................................................................................................................. 12
2.18.1. 1-dB Compression Point.................................................................................................................... 13
2.18.2. Third-Order Intercept Point .............................................................................................................. 13

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3. DESIGN OF LOW-NOISE AMPLIFIER ...................................................................................................... 15
3.1. DESIGN SPECIFICATION OF LOW-NOISE AMPLIFIER .................................................................................... 15
3.2. TRANSISTOR SELECTION ............................................................................................................................. 15
3.2.1. Features of Transistor ....................................................................................................................... 15
3.2.2. Applications of Transistor ................................................................................................................. 15
3.3. QUIESCENT-POINT DETERMINATION........................................................................................................... 15
3.3.1. Transistor Model Comparison .......................................................................................................... 16
3.4. DC BIASING NETWORK............................................................................................................................... 18
3.5. DESIGN OF LNA WITH S2P MODEL ............................................................................................................ 19
3.5.1. Stability Analysis of Transistor.......................................................................................................... 19
3.5.2. Using Ideal Components without Biasing ......................................................................................... 20
3.5.3. Using non-ideal Components without Biasing Network .................................................................... 22
3.6. DESIGN OF LNA WITH ELECTRICAL MODEL ............................................................................................... 24
3.6.1. Design with Ideal Components .......................................................................................................... 24
3.6.2. Design with non-ideal Components ................................................................................................... 26
3.7. LINEARITY ANALYSIS ................................................................................................................................. 29
3.7.1. 1-dB Compression Point.................................................................................................................... 29
3.7.2. Third-Order Intercept Point .............................................................................................................. 30
3.8. LAYOUT –LEVEL DESIGN OF THE LOW-NOISE AMPLIFIER .......................................................................... 31
3.9. SQUEEZING OF TRANSMISSION LINE ........................................................................................................... 31
3.9.1. Design with Ideal Components .......................................................................................................... 34
3.9.2. Design with non-ideal Components ................................................................................................... 36
3.10. MOUNTING PLAN OF THE LNA ................................................................................................................... 41
3.10.1. Comparison Schematic-Layout Level Simulation Results ................................................................. 42
4. LNA MANUFACTURING AND TEST .......................................................................................................... 43
4.1. TEST PLAN OF THE LOW-NOISE AMPLIFIER ................................................................................................ 43
4.2. MEASUREMENT OF PCB MODEL IN COMPARISON WITH SCHEMATIC, AND LAYOUT DESIGN ....................... 46
5. CONCLUSION AND FURTHER WORK ..................................................................................................... 48
6. REFERENCES.................................................................................................................................................. 49

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Table of figures

FIGURE 2-1 BLOCK DIAGRAM OF SUPER-HETERODYNE RECEIVER [3] ...........................................................................4

FIGURE 2-2 TWO PORT NETWORK WITH SOURCE AND LOAD .........................................................................................5
FIGURE 2-3 A GENERAL TRANSISTOR AMPLIFIER CIRCUIT ............................................................................................9
FIGURE 2-4 BFP720 TRANSISTOR MODEL ........................................................................................................... 10
FIGURE 2-5 A) PI-NETWORK B) T-NETWORK ............................................................................................................. 10
FIGURE 2-6 INPUT AND LOAD IMPEDANCE MATCHING THROUGH LAMBDA BY FOUR LINES ......................................... 11
FIGURE 2-7 1-DB COMPRESSION POINT ....................................................................................................................... 13
FIGURE 2-8 THIRD-ORDER INTERCEPT POINT ............................................................................................................. 14
FIGURE 3-1 I-V CHARACTERISTIC SIMULATION SETUP IN ADS. .................................................................................. 16
FIGURE 3-2 I-V CURVES OF BFP720 ........................................................................................................................... 16
FIGURE 3-3 SIMULATION SETUP OF ELECTRICAL AND S-PARAMETER MODELS ........................................................... 17
FIGURE 3-4 S-PARAMETERS ARE ESTIMATED USING ELECTRICAL (BLUE LINE) AND S-PARAMETER MODEL (RED LINE)
AT THE Q-POINT (ICE=13 MA AND VCE= 3 V) ................................................................................................... 18

FIGURE 3-5 DC BIASING SETUP IN ADS ...................................................................................................................... 19

FIGURE 3-6 SCHEMATIC FOR STABILITY TEST .............................................................................................................. 20
FIGURE 3-7 TRANSISTOR STABILITY TEST ................................................................................................................... 20
FIGURE 3-8 SCHEMATIC OF IDEAL COMPONENTS WITH S-PARAMETER MODEL............................................................ 21
FIGURE 3-9 SIMULATION RESULT OF NOISE FIGURE .................................................................................................... 21
FIGURE 3-10 SIMULATION RESULTS OF FORWARD VOLTAGE GAIN ............................................................................. 22
FIGURE 3-11 SIMULATION RESULTS OF INPUT AND OUTPUT REFLECTION COEFFICIENT ............................................... 22
FIGURE 3-12 SCHEMATIC OF NON-IDEAL COMPONENTS WITH S-PARAMETER MODEL ................................................. 23
FIGURE 3-13 SIMULATION RESULTS OF NOISE FIGURE................................................................................................ 23
FIGURE 3-14 SIMULATION RESULTS OF FORWARD VOLTAGE GAIN ............................................................................. 24
FIGURE 3-15 SIMULATION RESULTS OF INPUT AND OUTPUT REFLECTION COEFFICIENT............................................... 24
FIGURE 3-16 SCHEMATIC OF IDEAL COMPONENTS WITH ELECTRICAL MODEL ............................................................ 25
FIGURE 3-17 SIMULATION RESULTS OF NOISE FIGURE ................................................................................................ 25
FIGURE 3-18 SIMULATION RESULTS OF FORWARD VOLTAGE GAIN ............................................................................. 26
FIGURE 3-19 SIMULATION RESULTS OF INPUT AND OUTPUT REFLECTION COEFFICIENT .............................................. 26
FIGURE 3-20 SCHEMATIC OF NON-IDEAL COMPONENTS WITH ELECTRICAL MODEL .................................................... 27

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FIGURE 3-21 SIMULATION RESULTS NOISE FIGURE .................................................................................................... 28
FIGURE 3-22 SIMULATION RESULTS OF FORWARD VOLTAGE GAIN ............................................................................. 28
FIGURE 3-23 SIMULATION RESULTS OF INPUT AND OUTPUT REFLECTION COEFFICIENT............................................... 29
FIGURE 3-24 SIMULATION SETUP OF 1-DB COMPRESSION POINT ................................................................................. 29
FIGURE 3-25 SIMULATION RESULTS OF 1-DB COMPRESSION POINT ............................................................................. 30
FIGURE 3-26 SIMULATION SETUP OF THIRD-ORDER INTERCEPT POINT ........................................................................ 30
FIGURE 3-27 SIMULATION RESULTS OF THIRD-ORDER INTERCEPT POINT .................................................................... 31
FIGURE 3-28 SQUEEZING OF TRANSMISSION LINE ....................................................................................................... 31
FIGURE 3-29 (A) CORNER TYPE (B) SQUARE TYPE (C) CURVE TYPE ............................................................................ 32
FIGURE 3-30 LAYOUT SYMBOL OF LNA ..................................................................................................................... 33
FIGURE 3-31 LAYOUT DESIGN OF IDEAL COMPONENTS WITH ELECTRICAL MODEL ..................................................... 34
FIGURE 3-32 SIMULATION RESULTS OF NOISE FIGURE................................................................................................ 35
FIGURE 3-33 SIMULATION RESULTS OF FORWARD VOLTAGE GAIN ............................................................................. 35
FIGURE 3-34 SIMULATION RESULTS OF INPUT AND OUTPUT REFLECTION COEFFICIENT............................................... 36
FIGURE 3-35 LAYOUT DESIGN OF NON-IDEAL COMPONENTS WITH ELECTRICAL MODEL ............................................. 37
FIGURE 3-36 SIMULATION RESULTS OF NOISE FIGURE................................................................................................ 38
FIGURE 3-37 SIMULATION RESULTS OF FORWARD VOLTAGE GAIN ............................................................................. 39
FIGURE 3-38 SIMULATION RESULTS OF INPUT AND OUTPUT REFLECTION COEFFICIENT............................................... 39
FIGURE 3-39 SIMULATION COMPARISON BETWEEN THE LAYOUT DESIGN VERSUS MANUFACTURED LAYOUT DESIGN40
FIGURE 3-40 MOUNTING SETUP OF FINAL LAYOUT DESIGN OF C1, C2 = 1 PF; C3, C4 = 0. 5 PF, L1 = 0. 3 NH, L2 = 2. 4
NH; R2, R3 = 1 Ω; R1 = 50 Ω; C6, C13, C10, C8 = 50 PF; C7, C12 = 5 PF; C5, C11, C14 = 30 PF AND Q1 = BFP
720. ..................................................................................................................................................................... 41
FIGURE 4-1 FINAL MEASUREMENT SETUP OF LNA...................................................................................................... 44
FIGURE 4-2 MANUFACTURED PCB IS READY FOR SOLDERING COMPONENTS .............................................................. 44
FIGURE 4-3 MANUFACTURED PCB DESIGN OF A LOW NOISE AMPLIFIER OF ELECTRICAL MODEL .............................. 45
FIGURE 4-4 TEST PCB AND LNA MEASUREMENT SETUP ............................................................................................ 45
FIGURE 4-5 LNA MEASUREMENT RESULTS USING THE ROHDE & SCHWARZ ZVM VECTOR NETWORK ANALYZER. .... 46

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List of tables

TABLE 3-1 LIST OF COMPONENTS OF SCHEMATIC NON-IDEAL WITH S2P MODEL........................................................ 23

TABLE 3-2 LIST OF COMPONENTS OF SCHEMATIC WITH ELECTRICAL MODEL ............................................................ 27
TABLE 3-3 LIST OF COMPONENTS OF LAYOUT NON-IDEAL MODEL ............................................................................. 38
TABLE 3-4 RESULTS COMPARISON BETWEEN SCHEMATIC-LAYOUT MODEL .................................................................. 42
TABLE 4-1 COMPARISONS BETWEEN SCHEMATIC, LAYOUT AND PCB DESIGN OF LNA ............................................... 46
TABLE 4-2 COMPARISONS BETWEEN LAYOUT COMPONENTS VERSUS MANUFACTURED COMPONENTS ....................... 47

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List of Abbreviations
ADS Advanced Design Systems
CF Central Frequency
CEPT European Conference of Postal and Telecommunications Administrations
DC Direct Current
EM Electromagnetic
ETSI European Telecommunications Standards Institute
FCC Federal Communications Commission
HB Harmonic balance Simulation
HBT Hetero junction Bipolar Transistor
IMN/OMN Input /Output Matching Network
ISM Instruments, Scientific and Medical
IP3 Third -Order Intercept Point
ITU International Telecommunication Union
LNA Low-Noise-Amplifier
MW Microwave
NF Noise Figure
P1dB 1-dB Compression Point
PCB Printed Circuit Board
RF Radio Frequency
RFID Radio Frequency Identification
SMD Surface Mounted Device
UWB Ultra -Wideband
WLAN Wireless Local Area Network
Wi-Fi Wireless Fidelity

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1. Introduction
Low-noise amplifiers (LNA) are commonly used in wireless communication receiver front-ends due to
their property to amplify weak, radio frequency (RF) signals without adding supplementary noise. One
popular field of wireless applications is in the Industrial, Scientific and Medical (ISM) band because of
license free. The engineering community is giving high attention as well as is continuously designing
devices that are compatible with this band. Wireless LAN, Bluetooth, cordless phones and Wi-Fi all operate
in the frequency range of 2.4-2.5 GHz. For the low-noise amplifier at 2.45 GHz, the design challenge is to
achieve a low noise figure (NF) and high gain while maintaining low power consumption, and good
Linearity. Moreover, the LNA’s main parameters, i.e., noise figure and gain have a determined role in the
receiver sensitivity.

1.1. Background and Specifications

The performed project and the presented thesis are partial requirements of the Master of Science degree in
Wireless Networks and Electronics, a Master Program given at Department of Science and Technology
(ITN), Linköping University.
In this Thesis work a low-noise amplifier at 2.45 GHz will be designed and manufactured. The LNA will
be designed using input and output matching networks with lumped components. Simulations will be
performed using Advanced Design Systems (ADS) from KEYSIGHT Technologies, at different levels of
abstraction, starting with ideal components and ending with simulations on layout level with real
components values and models. To design the LNA, an appropriate transistor will be chosen.
Supplementary, in this work, the LNA will be investigated for linearity, which can be an interesting
properties for complex modulated RF signals. Finally, the LNA will be manufactured and evaluated through
measurements that are possible to be performed at the Faculty laboratory.
It is highly expected that the outcome of the thesis would be highly appreciated by the industry people due
to the strength and effectiveness of the cost. LNA design can be used in many applications such as in the
ISM radio, cellular handset, cordless phones, GPS receiver, satellite communication and wireless LAN etc.
The project itself demonstrates, concludes and enhances parts of the skills and knowledge acquired within
the Wireless Networks and Electronics Master Program.

1.2. Objectives
The main objectives of the thesis work are summarized as follows:
 Literature study on LNA
 Selection of suitable substrate for LNA
 Design and simulation of all the designs in Advanced Design Tools (ADS)
 Optimization of LNA
 Optimization of Linearity
 Fabrication of prototype of LNA and performance analysis
 Evaluation of noise figure, gain, input and output reflection coefficient.

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 1.3. Outline of the Thesis
Chapter 1:- Describes the thesis background and specifications.
Chapter 2:- Address the required literature review and explains the theoretical background.
Chapter 3:- Presents the design of the LNA with BPF720 in detail.
Chapter 4:- Illustrates the fabrication process and the results of the measurements.
Chapter 5:- Concludes the degree project work and also indicates possible future work.

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2. Theoretical Background
In this Chapter, the relevant concepts necessary to perform the task of low-noise amplifier design are
presented. Literature study included both course books and research papers, [RF Book David M. Pozar]-
[Paper on LNA 2.45 GHz receiver sensitivity, Low-Noise-amplifier design for navigation signal receiver].

2.1. ISM-Band
The ISM radio band is a radio band which is reserved globally for the use of radio frequency (RF) energy
for the purpose of industrial, scientific and medical equipment other than the communication [14]. In
general, communication equipment operating in these bands have to tolerate at any interference generated
by the ISM band equipment’s. Today, the use of ISM band is becoming very popular for short-range and
low power communications electronic systems. Due to the national radio regulation of spectrum
management, each country uses these bands designed in these sections may differ. Communication devices
which are using ISM bands, it must be tolerated at any interference from ISM equipment’s. Normally there
is no need of licensee required for these bands, also the unlicensed operations tolerate any external or
internal interference from other devices [6].
According to European commission’s short range device regulations, the use of the ISM band is being
governed in Europe [5]. In most of the European zones, for license-free voice communication, LPD433
band is allowed to use along frequency modulations [4].
Microwave oven is the one of the best examples of ISM device, which operates at 2.45 GHz. In radio
frequency identification (RFID) applications such as biometric and contact less smart cards, ISM bands are
being used widely.
Some Low power remote control toys, gas powered cars and miniature aircraft use a 2.4 GHz band range.
Worldwide digital cordless telecommunications (WDCT) is an ISM band technology which can use the
2.45 GHz radio spectrum. Wireless LAN devices use the following bands [13].
 Bluetooth 2450 MHz
 IEEE 802.11 / Wi-Fi 2450 MHz

2.2. Radio Receiver Basics

The super-heterodyne receiver is one of the most popular receiver topology, which is widely used today in
a variety of applications from broadcast receivers in two way radio communication links as well as many
mobile radio communications systems [3]. The early stage of radio communication technology
development, the super-heterodyne receiver offers many advantages in many applications.

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 Figure 2-1 Block diagram of super-heterodyne receiver [3]

A typical block diagram of the super-heterodyne receiver is shown in Figure 2-1. The basic function of the
receiver is to recover the transmitted baseband signal by the reversing the function of the transmitter. The
radiated electromagnetic wave the RF signal is received by the antenna. Then, the signal passes through a
Band pass filter (BPF) that provides some selectivity by filtering out signals of unwanted frequencies and
passing signal in the desired frequency band.
The basic function of low-noise amplifier (LNA) following the BPF is to amplify the usually very weak RF
signal and to minimize the noise power which might be added to the received signal [3]. The output of LNA
is further fed to the mixer circuit and thus down-converted to a lower frequency, called intermediary
frequency (IF). A local oscillator (LO) signal is used at the second input of the mixer. The IF frequency is
chosen at level near to the RF-signal input frequency such that the IF output signal frequency will be
relatively low. An IF band- pass filters out the undesired components at the mixer’s output [3].
At the receiver level, an important parameter to be considered is the receiver sensitivity, given by:

� � ��� � � � = -174dBm+ 10logB+ F(dB)+ ( /� )min(dB) (2.1)

Where -174dBm represents the noise power that source delivers to the receiver at room temperature
considering the conjugate matching at the receiver input, B is the bandwidth of the system, F is the receiver
noise figure and /� is the signal-to-noise ratio at the output of the receiver.

2.3. Network Analysis

When designing RF circuits, other parameters than Z-, Y-, h-parameters are used to describe the high
frequency behavior of the circuit. They are the scattering (S)-parameters [9]. The circuit/system is
represented in form of a two-port. In this Sub-chapter, the two-port concept and the S-parameters are
introduced.
2.3.1. Two-Port Networks
A two port network is a representation of any electrical circuit or system. As shown in Figure 2-2 , it
presents two input terminals and two output terminals [9]. The input port is assumed to get the input signal
from a signal source and the output signal is delivered to an impedance load, ZL.

4
 Figure 2-2 Two port network with Source and load

2.3.2. S-Parameters
Scattering parameters defines the relationships between the input and output of an electrical network in
terms of incident and reflected power waves [1].
The equation of incident and reflected power wave can be written as:

(2.2)
= � + �
√

(2.3)
= � − �
√

Where
= Incident power wave
= Reflected power wave
N = port 1or 2
= Characteristics impedance
Four waves , And , Written as:

= S11 + S12 (2.4)

= S21 + S22 (2.5)

Combining above four equations, it results

(2.6)
=[ ]

Where

= where =0 =Input reflection coefficient

= where =0= Reverse voltage gain

5
 = where =0= Forward voltage gain

= where =0 =Output reflection coefficient

2.4. Types of Noises

Noise is an undesired random disturbance in the any communication systems which can degrade the Useful
signal (f). Noise will come from natural or man-made sources. For wireless system performance evaluation,
noise is an important factor to be taken into account. Normally, noise exists in all Radio frequencies (RF)
and microwave systems. Receiver performances can be limited by the Noises effect. There are several
parameters such as signal-to-noise ratio, dynamic range, bit Error rates and minimum detectable signal level
all are directly dependent on the noise effect [3].
As noise is random, then it’s mean value will be zero, hence we use mean square values, which are
measurements of the dissipated noise power. The effective noise power of a Source is measured in root
mean square of RMS values.

V n = √� (2.7)

2.4.1. Thermal Noise

Thermal noise is also called as Johnson-Nyquist noise. This noise is generated by the Brownian motion of
the electrons in resistors, whether or not there is current flowing through the resistor. In bipolar transistors,
any resistive physical layer exhibits thermal noise.

� = √ 4� (2.8)

Where
K = Boltzmann constant
T = Absolute temperature
B = Bandwidth
R = Resistance
n= noise
2.4.2. Shot Noise
This noise is generated by current flowing across a P-N junction and is a function of the bias current and
the electron charge. The impulse of charge q detected as a single shot event in the time domain can be
Fourier transformed into the frequency domain as a wideband noise [20].
� = 2qIB (2.9)

Where
n= noise
q = electron charge

6
I = average current
B = noise bandwidth
2.4.3. Flicker Noise
This type noise occurs in almost all electronic devices at low frequencies and this noise can be defined
corner noise or pink noise.

� = (2.10)
� � ��

Where
n = noise
K = process-dependent constant
W = width of the channel

� = Oxide capacitance per unit length

f = frequency.

2.5. Noise Figure

Noise figure (NF) is the one of most important parameters to evaluate the radio performance of
communication systems. Noise Figure is defined as the ratio of the signal-to-noise power at the input to the
signal-to-noise power at the output [3].

� � (2.11)
SNR = �

The main purpose of noise figure is to measure the how much SNR degrades, if a System has no noise then
the SNR in = SNR out.
The noise figure (NF) can be calculated using the following mathematical equations
� /�� � � (2.12)
� = = ≥
/� �

� = log � (2.13)
Where,

� = Input signal power

�� = Input noise power
= Output signal power
� = Output noise power
The total noise figure of LNA can be found from Friis equation is
� − � − � − � − (2.14)
NF tot = 1+ (� − + + + +--------------+
� −−−��−

7
From Friis equation (2.14), it is understandable that the total noise figure (NF tot) is dominated by the noise
figure of first stage, � which is the noise figure of the Low-Noise-amplifier (LNA). Simultaneously, the
gain of the first stage reduces the noise in the consecutive stages.

2.6. Low-Noise Amplifier

Low-noise amplifiers are one of the building blocks of communication system, LNA consists of three
stage’s input matching network and transistor itself and output matching network. Gain, non –linearity,
noise figure and impedance matching are four most important parameters in LNA design. The objective of
LNA is to amplify the received signal to an acceptable level with minimum noise figure and acceptable
gain.
2.6.1. Amplifier Design Procedure
 Evaluate the stability factor to identify the possibility of instability’s depending on the source and
load matching [19].
 Determine bias condition and circuit.
 The specified gain is required at single frequency we need to add gain circles can be plotted on the
Smith chart and the associated source match can be read off corresponding load match can be
calculated. Careful consideration must be taken the position of the source match in relation to the
stability circles.
 The specified noise figure and gain are required at single frequency we need to add noise figure
circles to the gain circles form. The source match required, will be intersection of required gain and
noise figure circles, again careful consideration must be taken on the position of the source match
in relation to the stability circles.
 Once a required source match can be chosen, then the corresponding output matches required for
best return loss can be calculated [19].

2.7. Stability Analysis

Stability is one of the important steps in designing of microwave transistor amplifiers, stability will check
whether the transistor is stable or not. If the transistor is unconditionally stable, it will not oscillate with any
passive termination. In another way, if the transistor is unstable, we need to add a series resistor for
stabilizing of a transistor.
Conditions for unconditional stability is
K > 1 and
|Δ| < 1
Where

−| | −| | +|Δ| (2.15)
K= | � |

And

Δ = S11 S22 – S12 S21 (2.16)

8
Another alternative is to use the μ-factory where the condition μ > 1 alone is sufficient for a circuit to be
unconditionally stable.

−| | (2.17)
μ=
| � |+ | −Δ�∗ |

If the transistor is potentially unstable, the stability circles can be added in the Smith chart and to determine
the values of source match (ΓS) and load match (ΓL) for which the transistor is conditionally stable.

2.8. Input and Output Matching Network

Matching networks are one of the important steps in the design of LNA, by using the matching network in
order to a delivered maximum power to 50 ohm load. Matching network must have the terminations Z S
and Z L.
The input matching network and output matching network can be designed by using lumped and distributed
components. The input matching network was designed to transform the generator impedance 50 ohm to
the source impedance and output matching network was designed to transform the 50 ohm to the load
impedance [10]. The following Figure 2-3 shows a general transistor amplifier circuit where IMN and OMN
are designed with the transistor.

Figure 2-3 A general Transistor amplifier circuit [16]

2.9. Transistor model

In order to design an LNA, the selection of transistor is very critical. This is one of the most important steps
in designing a low –noise- amplifier. We have different types of transistors is available for an LNA design,
a proper transistor should be selected for Low – Noise Amplifier due to its high gain, low noise figure. In
this thesis work, BFP 720 is chosen.
 The BFP720 is a wideband Silicon Germanium Carbon (SiGe: C) NPN Hetero junction Bipolar
Transistor (HBT) in a plastic 4-pin dual emitter SOT343 package.
 The device combines very high gain with lowest noise figure at low operating current for use in a
wide range of wireless applications.
 The BFP720 is specially designed to match the portable battery-powered applications in which low
power consumption is a key requirement. Collector design supports operation voltages from 1.0 V
to 4.0 V.

9
 Figure 2-4 BFP720 TRANSISTOR MODEL

2.10. Quiescent-Point Selection

The operating point of the device is called as Quiescent-point, Quiescent-point is a steady state operating
condition of active device without applying any input signal. First, we choose proper Quiescent-point, then
we choose proper biasing of transistor for a total frequency range.

2.11. DC Biasing Network

Biasing is a process of setting up the bias point at the middle of the DC load line by applying the collector
voltage and current. In a bipolar junction Transistor (BJT) bias is the DC voltage supplied from a battery
that is applied in the collector [16].

2.12. Matching Network with Lumped Components

Matching network with lumped components can be implemented by three types of topologies such as T-
networks, L-network and pi-network. In this thesis work, T-network is used [16].

Figure 2-5 a) Pi-network b) T-network

2.13. Matching Network with Distributed Components

In this process, design of LNA can be implemented by quarter wave transmission line. In this case the IMN
of LNA with lumped components can be replaced with matching network with distributed components.
Where the input impedance (Z in) and impedance of LNA (ZL) are known by using these two values we can
calculate the characteristic impedance (Z0) of the quarter wave transmission line [16].

10
 Figure 2-6 Input and Load impedance matching through lambda by four line

Z0 can be calculated by using this formula

= √ � ) (2.18)

Where
= Characteristics impedance of the line
= Impedance from LNA

� = Input impedance.
Once we measure , then we have to calculate width and height of the transmission line by using an ADS
line calculator.

2.14. Harmonic Balance Simulation

Harmonic balance simulation is a frequency domain analysis technique for simulating nonlinear circuits
and systems. Harmonic balance simulation is used for simulating of RF and Microwave circuits, Harmonic
balance simulation is naturally handled in the frequency domain. These circuits are used Harmonic balance
simulations under the large signal conditions are [12]
 Power amplifiers
 Frequency multipliers
 Mixers
 Oscillators
 Modulators
By using of harmonic balance simulation, we can calculate the magnitude and phase of voltages or
current.
The techniques of harmonic balance simulation are
 Determine the quantities’ of 1-dB compression point, third –order intercepts, total harmonic
distortion and intermodulation products.
 Implement the nonlinear noise analysis

11
  Implement the load - pull counter analysis of power amplifiers
 Simulate the oscillator harmonics, phase noise and amplitude limits.

2.15. Dynamic Range

The Dynamic range is defined as the ratio between the maximum allowable signal powers to the minimum
detectable signal power. The dynamic range depends on the noise characteristics of the receiver as well as
the type of modulation being used, and the required minimum SNR. The maximum allowable signal power
is defined by the third-order intercept point, p3 at the input to the receiver. It could be maximum input
power before the intermodulation distortion and it becomes an unacceptable [3].
In contrast, it is to be very low power of the received signal, the receiver must be able to accept the signal
when the receiver is close to the transmitter.

2.16. Intermodulation Distortion

The measured distortion of a linear amplifier is called as intermodulation distortion (IMD), and it is
expressed as the power in dBs below the amplifier of the peak power. It is one of the most important
measurement of signal analyzer. IMD describes the ratio between the power of fundamental tones and third-
order distortion products. It is an important measurement of linearity for a wide range of RF and Microwave
components [11].
IMD measurement setups are used mostly at two signal generators and it is combined with an RF power
combiner. These setups include an isolator between each signal generator and the combined and to produce
the best possible of the two-tone source.

2.17. Gain Compression

Gain compression is measuring the level of input power which is applied to an amplifier that will cause a
destroyed output, gain compression gives accurate compression measurements. The input power increases,
then the gain of the amplifier goes too decreased, the amplifier goes into compression. The 1-dB
compression point is the most common measurement of the amplifier [8].
Gain compression can be measured the following three measurements
 Swept-Frequency Gain Compression, it locates the lowest frequency at which the 1-dB
compression point occurs.
 Swept-Power Gain Compression, it shows the input power at which 1-dB drop in gain occurs when
the ever power ramp is applied to the amplifier at a particular point of frequency.
 Absolute Power, it shows the absolute power out of the compression.

2.18. Linearity Analysis

Linearity of Low-Noise amplifier (LNA) is most important in a wireless receiver to reduce the inter-
modulation distortion. LNA is not usually investigated in the design process. However, as the sensitivity of
the modern receivers is an important figure of merit, it is of worth to optimize every stage in the chain for
linearity. Third-Order Intercept (IP3) and the 1-dB compression point (P1dB) are the two parameters of the
LNA that characterize its linearity.

12
 2.18.1. 1-dB Compression Point
P1 dB shows at which input power level the output power drops by 1dB as compared to the ideal output
value. Hence, the 1-dB compression point is an important factor as it shows the input power point, where
the compression begins and distortion occurs. General principle for linear amplifier operation is the
amplifier should operate below the compression region [7].

Figure 2-7 1-dB compression point

2.18.2. Third-Order Intercept Point

Third –Order intermodulation product shows what power level the third-order intermodulation product is
equal to the power level of the first order output. Third- Order product is the most trouble some of the
intermodulation effect caused by non-linear operation. Third–Order intermodulation product is a measure
of the amplifier linear. It refers to the case when strong signals of frequency f1 and f2 are close to the
operating frequency (f0). Due to non-linearity of the amplifier, intermodulation (IM) products are generated
with frequencies 2f2-f1 and 2f1-f2. IIP3 and OIP3 is the input power and output power respectively, that
corresponds to the IP3.

IP3 = P1 dB+10 dB (2.20)

13
Figure 2-8 Third-Order Intercept point

14
3. Design of Low-Noise Amplifier
In this chapter, the LNA design is described step by step. The operating frequency of the LNA is 2.45 GHz.
The LNA design is performed by using Advanced Design System (ADS) software. Simulations are
followed by simulation results analysis and optimization.

3.1. Design Specification of Low-Noise Amplifier

The design specifications for the LNA's as follows:
 Power Gain > 13 dB
 Noise Figure < 1 dB
 Lumped components will be used for matching networks
 Bandwidth: 100 MHz with center frequency 2.45 GHz
 The LNA will be investigated and optimized for good linearity

3.2. Transistor Selection

The INFINEON Technologies’ BFP720 is chosen to design the 2.45 GHz LNA, [2].
3.2.1. Features of Transistor
 High performance general purpose wideband LNA transistor
 150 GHz fT - Silicon Germanium (SiGe) Carbon technology
 High dynamic range
 Transistor geometry optimized for low-current applications
 Operation voltage: 1.0 V to 4.0 V
 Very high gain at high frequencies and low current consumption
 26 dB maximum stable gain at 1.9 GHz and only 13 mA
 15 dB maximum available gain at 10 GHz and only 13 mA
 Ultra low noise figure from latest SiGe: C technology
 0.7 dB minimum noise figure at 5.5 GHz and 0.95 dB at 10 GHz
 High linearity OP1dB = +8.5 dB m and OIP3 = +23 dB m at 5.5 GHz and low current consumption
of 13 m A
 Pb-free (Ro HS compliant) package.
3.2.2. Applications of Transistor
Applications of the BFP720 transistor are summarized as follows, [2]
 FM Radio, Mobile TV, RKE, AMR, Cellular, GPS, SDARs, Bluetooth, Cordless phone, UMTS,
WLAN, UWB, LNB.

3.3. Quiescent-Point Determination

To characterize the transistor, the I-V characteristic simulation setup shown in Figure 3-1 is used. From
simulation results shown in Figure 3-2, the value of the VBE voltage can be determined for the desired
collector current, IC.

15
 Figure 3-1 I-V characteristic simulation setup in ADS.

Figure 3-2 I-V curves of BFP720

The chosen bias point and the corresponding VBE are:

 Collector-Emitter voltage, VCE = 3 V
 Collector current, IC = 13 mA
 Base–Emitter voltage, VBE = 0.836 V.
3.3.1. Transistor Model Comparison
For the design of the 2.45 GHz LNA, the electrical and S-parameter models were used. Electrical model is
an equivalent model that includes the parasitic components of the packages and the S-parameter model
includes the measured S-parameters and noise parameters for different bias conditions.
The Electrical model of transistor is based on the physical and electrical properties such as oxide thickness,
substrate doping concentration, parasitic capacitances, etc. It gives the accurate information about the
transistor behavior at low and medium frequency range. The S-parameter model of the transistor is a set of
S-parameter and noise figure parameters mainly used to perform the RF part of the design, i.e., stability
analysis, design of the matching networks for specified LNA metrics (noise figure, power gain).

16
 Figure 3-3 Simulation setup of Electrical and S-parameter models

The Electrical (SPICE) model is used during the design of the bias (DC) network, while the S-parameters
model is used for the RF part of the amplifier design. However it is interesting to compare both models in
terms of S-parameters as resulting the transistor with its electrical model and simulating the transistor with
the S-parameters model.
The S-parameter model is suitable for high frequency applications. Figure 3-3 shows the ADS simulation
setup for the simulation of S-parameters of the transistor using the two models. The simulation results are
show in the Figure 3-4. From these results, we can conclude that the small-signal model is enough accurate
to be used when necessary. However, we can see that the S-parameters resulting from these two model do
not overlap .We also know that at high frequency, the measured S-parameters model is better to be used
that the lumped model. For the design of LNA, the electric model for the transistor is necessary.

17
Figure 3-4 S-parameters are estimated using Electrical (blue line) and S-parameter model (Red line) at the Q-point (ICE=13 mA
and VCE= 3 V)

3.4. DC Biasing Network

Biasing is a process of setting up the appropriate DC bias point at the middle of the DC load line by applying
the collector voltage and current. In a bipolar junction Transistor (BJT) bias is the DC voltage supplied
from a battery that is applied at the collector.

18
 Figure 3-5 DC biasing setup in ADS

In order to get the quiescent point, the above circuit is designed. At collector, it is needed to have ICE =13
mA. In the above circuit setup, it is 13.1 mA which is very close to desired one. The collector voltage,
according to Quiescent point, is VCE = 3 V, so here, by the above setup, exactly it is found 3 V. In order to
achieve this specification (i.e. Drain current, ICE = 13 mA, and VCE = 3V of VBE =0.836 V).

3.5. Design of LNA with S2P Model

In this section, LNA is designed using an S2P file with an ideal and non-ideal components without
biasing networks.
3.5.1. Stability Analysis of Transistor
Stability will check whether a transistor of LNA stable or not. First, we run S2P file alone then we will
check transistor of LNA, if the transistor is stable is K > 1. If it is unstable K < 1, we need to stable of
transistor we added a series resistor to beside the S2P file then we will get Stable.

19
 Figure 3-6 schematic for stability test

Figure 3-7 Transistor stability test

When a 50 ohm series resistor is connected to the collector, the value of stability factor K > 1 through the
whole bandwidth as shown in Figure 3-7. Along to x-axis Frequency [GHZ] and along with y axis stability
factor (K) are plotted.

3.5.2. Using Ideal Components without Biasing

In the following circuit, input matching network (IMN) and output matching network (OMN) are
designed by using the Smith chart tool in the ADS.

20
 Figure 3-8 Schematic of ideal components with S-parameter model

According to this figure, several parameters will be discussed such as forward voltage gain (S 21), Noise
figure (NF), input reflection coefficient (S11). The circuit is optimized in order to get required noise figure
(NF) and gain.
In Figure 3-9, along with x-axis frequency and along to y-axis noise figure are plotted. Noise figure is found
as 0.740 dB at 2.45 GHz frequency. If this amount of noise figure is achieved, by changing of IMN, the
value of the input reflection coefficient goes higher than -10 dB which is undesirable.

Figure 3-9 simulation result of Noise Figure

In Figure 3-10, along to with x-axis frequency and along to y-axis forward voltage gain is plotted
respectively. Here, the forward voltage gain is 20.16 dB at 2.45 GHz frequency. If the forward voltage gain
is increased by changing of IMN and OMN components, then the noise figure also increases. The design
of LNA, the main concern is to get the acceptable value of noise figure and forward voltage gain.

21
 Figure 3-10 simulation Results of Forward Voltage gain

The value of the input reflection coefficient is to be changed by changing the value of IMN’s components.
The value of the input reflection coefficient of Figure 3-11 can be decreased, if the value of the input
reflection coefficient is decreasing then the noise figure Value is increased. Practically, its value should be
less than -10 dB, so here, the value of the input reflection coefficient is -25dB.

Figure 3-11 simulation results of input and output reflection coefficient

3.5.3. Using non-ideal Components without Biasing Network

The following circuit is designed with non-ideal components without biasing network. The Schematic was
simulated and found the following responses of input reflection coefficient, noise Figure and forward
voltage gain.

22
 Figure 3-12 Schematic of non-ideal components with S-parameter model

Table 3-1 List of Components of Schematic non-ideal with S2P model

Resistor Capacitor Inductor

R1 = 80 Ω C1 = 10 pF L1 =1.5nH

C2 =10pF L2 =5Nh

C3 =2 PF

C4 =0.1 pF

In Figure 3-13, along with x-axis frequency and along to y-axis noise figure are plotted. Noise figure is
found as 0.740 dB at 2.45 GHz frequency. If this amount of noise figure is achieved, by changing of IMN,
the value of the input reflection coefficient, goes higher than -10 dB which is undesirable.

Figure 3-13 Simulation results of Noise Figure

In Figure 3-14, along to with x-axis frequency and along to y-axis forward voltage gain is plotted
respectively. Here, the forward voltage gain is 20.32 dB at 2.45 GHz frequency. If the forward voltage gain

23
is increased by changing of IMN and OMN components, then the noise figure also increases. The design
of LNA, the main concern is to get the acceptable value of noise figure and forward voltage gain.

Figure 3-14 Simulation results of Forward Voltage gain

The value of the input reflection coefficient is to be changed by changing the value of IMN’s components.
The value of the input reflection coefficient of Figure 3-15 can be decreased, if the value of the input
reflection coefficient is decreasing then the noise figure Value is increased. Practically, its value should be
less than -10 dB, so here, the value of the input reflection coefficient is -24 dB

Figure 3-15 Simulation results of input and output reflection coefficient

3.6. Design of LNA with Electrical Model

In this section, LNA is designed with electrical model, but Electrical model does not explain the results in
all the frequencies as compared to S2P file. Biasing network is designed by using Electrical model.
3.6.1. Design with Ideal Components
The following circuit is designed with ideal components. After simulation, we have to look following
components of the input reflection coefficient (S11), noise figure (NF) and forward voltage gain (S21).

24
 Figure 3-16 Schematic of ideal components with Electrical model

In Figure 3-17, along with x-axis frequency and along to y-axis noise figure are plotted. Noise figure is
found as 0.854 dB at 2.45 GHz frequency. If this amount of noise figure is achieved, by changing of IMN,
the value of the input reflection coefficient, goes higher than -10 dB which is undesirable.

Figure 3-17 simulation results of Noise Figure

In Figure 3-18, along with x-axis frequency and along to y-axis forward voltage gain is plotted respectively.
Here, the forward voltage gain is 18.15 dB at 2.45 GHz frequency. If the forward voltage gain is increased
by changing of IMN and OMN components, then the noise figure also increases. The design of LNA, the
main concern is to get the acceptable value of noise figure and forward voltage gain.

25
 Figure 3-18 Simulation results of Forward voltage gain

The value of the input reflection coefficient is to be changed by changing the value of IMN’s components.
The value of the input reflection coefficient of Figure 3-19 can be decreased, if the value of the input
reflection coefficient is decreasing then the noise figure Value is increased. Practically, its value should be
less than -10 dB, so here, the value of the input reflection coefficient is -12dB.

Figure 3-19 Simulation Results of input and output reflection coefficient

3.6.2. Design with non-ideal Components

The following circuit is designed with non-ideal components. After simulation, we have to look following
components of the input reflection coefficient (S11), noise figure (NF) and forward voltage gain (S21).

26
 Figure 3-20 Schematic of non-ideal components with Electrical model

Table 3-2 List Of Components of Schematic with Electrical model

Resistor Capacitor Inductor

R1 = 60 Ω C1 = 10 pF L1 =2.3nH

R2 =1 Ω C2 =10pF L2 =1nH

R3 =10 Ω C3 =0.5 PF

C4 =1 pF

C5 =1pF

C6= 50pF

C7 =5pF

C8 =50pF

C9 =30 PF

C10 =30pF

C11 =50pF

C12 =5pF

C13 =50pF

C14= 1pF

In Figure 3-21, along with x-axis frequency and along to y-axis noise figure are plotted. Noise figure is
found as 0.854 dB at 2.45 GHz frequency. If this amount of noise figure is achieved, by changing of IMN,
the value of the input reflection coefficient, goes higher than -10 dB which is undesirable.

27
 Figure 3-21 Simulation results Noise Figure

In Figure 3-22, along with x-axis frequency and along to y-axis forward voltage gain are plotted
respectively. Here, the forward voltage gain is 18.16 dB at 2.45 GHz frequency. If the forward voltage gain
is increased by changing of IMN and OMN components, then the noise figure also increases. The design
of LNA, the main concern is to get the acceptable value of noise figure and forward voltage gain.

Figure 3-22 Simulation results of Forward Voltage gain

The value of the input reflection coefficient is to be changed by changing the value of IMN’s components.
The value of the input reflection coefficient of Figure 3-23 can be decreased, if the value of the input
reflection coefficient is decreasing then the noise figure Value is increased. Practically, its value should be
less than -10 dB, so here, the value of the input reflection coefficient is -12.2 dB

28
 Figure 3-23 Simulation results of input and output reflection coefficient

3.7. Linearity Analysis

Linearity of low-noise–amplifiers (LNA) is most important in a wireless receiver to reduce the inter-
modulation distortion. LNA is not usually investigated in the design process. However, as the sensitivity of
the modern receivers is an important figure of merit, it is of worth to optimize every stage in the chain for
linearity. Third-Order Intercept (IP3) and the 1-dB compression point (P1dB) are the two parameters of the
LNA that characterize its linearity.
3.7.1. 1-dB Compression Point
1-dB compression point shows at which input power level the output power drops by 1 dB as compared to
the Ideal output value. 1-dB compression point is an important factor as it shows the input power point,
where the compression begins and distortion occurs. General principle for linear amplifier operation is the
amplifier should operate below the compression region.
Sample _PA represents the schematic of the amplifier by using an electrical model of the transistor.

Figure 3-24 Simulation setup of 1-dB compression point

The resulting of 1-dB compression point measured at 2.45GHz was 6dbm resulting in an input power
of -12 dBm.

29
 Figure 3-25 Simulation results of 1-dB compression point

3.7.2. Third-Order Intercept Point

Third –Order intermodulation product shows what power level the third-order intermodulation product is
equal to the power level of the first order output. Third- Order product is the most troublesome of the
intermodulation effect caused by non-linear operation.
Third–Order intermodulation product is a measure of the amplifier linear. It refers to the case when strong
signals of frequency f1 and f2 are close to the operating frequency (f0). Due to non-linearity of the amplifier,
intermodulation (IM) products are generated with frequencies 2f2-f1 and 2f1-f2. IIP3 and OIP3 is the input
power and output power respectively, that corresponds to the IP3.
IP3= P1 dB+10 dB (3.1)

Figure 3-26 Simulation setup of Third-order intercept point

30
The resulting of third -Order output shows OIP3 = 20.13 dBm and the third-Order input shows the IIP3 =
2.6 dBm. This amount of values is very large compared to other designs.

Figure 3-27 Simulation results of Third-order intercept point

3.8. Layout –Level Design of the Low-Noise Amplifier

Layout of LNA is designed using Roger’s substrate (Rogers 4350B) [21]
Substrate specifications are:
 Substrate thickness = 0.254 mm
 Relative dielectric constant = 3.48
 Conductor thickness = 35 μ m
 Dielectric loss tangent = 0.0004
 5.8 ∗ 10E7

Conductivity of conductor =
Conductor surface roughness = 0.001 mm.

3.9. Squeezing of Transmission Line

Squeezing can defines a, you can modify an existing transmission line to squeeze it into a smaller space,
specifying the several characteristics in the squeezing process, such as corner type, lead length and
minimum spacing [22]

Figure 3-28 squeezing of Transmission line

31
We have three types of directions into the squeezing in that three what type of direction you want, you can
use, below it mentioned three directions of squeezing.

Figure 3-29 (a) Corner type (b) Square type (c) Curve type

Ending direction: which direction of the last two segments connected to the ending leads to be drawn
 Minimum spacing- The minimum spacing between the parallel trace segments
 Metered corner cutoff ratio- The desired cutoff ratio for the corner type mitered
 Curve radius- The desired curve radius of the corner type curve
 Lead length -starting and ending segments of the length.

32
The following circuit is an electrical model design with an ideal and non-ideal components. The layout
symbol of LNA respectively, with components whose dimension is 48mm x 50 mm. The Layout was
simulated to find out the responses of input reflection coefficient, noise figure and forward voltage gain.

Figure 3-30 Layout symbol of LNA

33
 3.9.1. Design with Ideal Components
The circuit is designed with Ideal components. The layout is simulation and the following components,
input reflection coefficient (S11), noise figure (NF) and forward voltage gain (S21) are measured.

Figure 3-31 Layout design of ideal components with Electrical model

In Figure 3-32, a plot is drawn with frequency on X-axis and noise figure on Y- axis. Noise figure is 0.804
dB at 2.45 GHz. If this amount of noise figure is achieved, by changing of IMN the value of the input
reflection coefficient will be higher than -10 dB, which is undesirable.

34
 Figure 3-32 Simulation results of Noise Figure

In Figure 3-33, a plot is drawn with frequency on X-axis and forward voltage gain on Y- axis. Here, the
forward voltage gain is 21.74 dB at 2.45 GHz frequency. If the forward voltage gain is increased by
changing of IMN and OMN components, then the noise figure also increases. The design of LNA, the main
concern is to get the acceptable value of noise figure and forward voltage gain.

Figure 3-33 Simulation results of Forward Voltage gain

The value of the input reflection coefficient is to be changed by changing the value of IMN’s components.
The value of the input reflection coefficient of Figure 3-34 can be decreased, if the value of the input
reflection coefficient is decreasing then the noise figure Value is increased. Practically, its value should be
less than -10 dB, so here, the value of the input reflection coefficient is -19 dB.

35
 Figure 3-34 Simulation results of input and output reflection coefficient

3.9.2. Design with non-ideal Components

The circuit is designed with non-ideal components. The layout is simulation and the following components,
input reflection coefficient (S11), noise figure (NF) and forward voltage gain (S21) are measured.

36
Figure 3-35 Layout design of non-ideal components with Electrical model

37
Table 3-3 List of Components of Layout non-ideal model

Resistor Capacitor Inductor

R1 = 10 Ω C1 = 10 pF L1 =0.3nH

R2 =1 Ω C2 =10pF L2 =2nH

R3 =1 Ω C3 =0.5 PF

C4 =1 pF

C5 =30pF

C6= 50pF

C7 =5pF

C8 =50pF

C9 =30 PF

C10 =30pF

C11 =50pF

C12 =5pF

C13 =50pF

C14= 30pF

In Figure 3-36, a plot is drawn with frequency on X-axis and noise figure on Y- axis. Noise figure is 0.806
dB at 2.45 GHz. If this amount of noise figure is achieved, by changing of IMN the value of the input
reflection coefficient will be higher than -10 dB, which is undesirable.

Figure 3-36 Simulation results of Noise Figure

In Figure 3-37, a plot is drawn with frequency on X-axis and forward voltage gain on Y- axis. Here, the
forward voltage gain is 21.26 dB at 2.45 GHz frequency. If the forward voltage gain is increased by
changing of IMN and OMN components, then the noise figure also increases. The design of LNA, the main
concern is to get the acceptable value of noise figure and forward voltage gain.

38
 Figure 3-37 Simulation results of Forward Voltage gain

The value of the input reflection coefficient is to be changed by changing the value of IMN’s components.
The value of the input reflection coefficient of Figure 3-38 can be decreased, if the value of the input
reflection coefficient is decreasing then the noise figure Value is increased. Practically, its value should be
less than -10 dB, so here, the value of the input reflection coefficient is -26 dB.

Figure 3-38 Simulation results of input and output reflection coefficient

39
Figure 3-39 Simulation Comparison between the Layout design - Manufactured layout design

40
 3.10. Mounting Plan of the LNA
To prepare the mounting plan and measurement of LNA, the PCB mounting plan of LNA shows a list of
the necessary components used for manufacturing.

Figure 3-40 Mounting setup of final layout design of C1, C2 = 1 pF; C3, C4 = 0. 5 pF, L1 = 0. 3 nH, L2 = 2. 4 nH; R2, R3 = 1
Ω; R1 = 50 Ω; C6, C13, C10, C8 = 50 pF; C7, C12 = 5 pF; C5, C11, C14 = 30 pF and Q1 = BFP 720.

41
 3.10.1. Comparison Schematic-Layout Level Simulation Results
The designed LNA has been simulated in the ADS tool and the simulated results of LNA are tabulated
along three designs.

Table 3-4 Results comparison between schematic-layout model

Schematic design Schematic design (Real) Layout

(ideal)

Forward Voltage gain 21.5 dB 21.3 dB 21 dB

Noise figure 0.854 dB 0.866 dB 0.80 dB

Input Reflection Coefficient -12.4 dB -12 dB -11.5 dB

Output Reflection Coefficient -14 dB -14 dB -11 dB

The simulation of LNA schematic shows a better forward voltage gain, noise figure and input reflection
coefficient. LNA layout simulation produces a better noise figure and input reflection coefficient at 2.45
GHz frequency over schematic of LNA.

42
4. LNA Manufacturing and Test
The final steps of the thesis work are the manufacturing of the LNA and test its functionality. As we have
achieved the required LNA parameter results on schematic- and layout level, the LNA will be manufactured
implemented on a printed-circuit board using the ROGERS4350B. The final LNA layout as shown in Figure
3-35 was used.

4.1. Test Plan of the Low-Noise Amplifier

To test the LNA, the measurement set-up was decided as shown in Figure 4-1. The following equipment’s
are required
 Digital Multimeters
 Power Supply unit
 Network analyzer
 Spectrum analyzer
 Connecting cables

The test starts with checking the bias point of the transistor on bread board. Some considerations:
 Before applying a supply voltage to the transistors, check the connections properly.
 Turn on the power supply unit.
 Always starts supply voltage to the base side of the transistor then slowly increased to the required
base voltage.
 Slowly apply supply voltage to the collector side of the transistor.

43
 Figure 4-1 Final measurement setup of LNA

Some representative photos taken during the manufacturing and measurement process are shown
in Figure 4-2, 4-3 and 4-4. A detailed photo of the measurement result with Rhode & Schwarz
ZVM vector network analyzer is shown in Figure 4-5.

Figure 4-2 Manufactured PCB is ready for soldering components

44
Figure 4-3 Manufactured PCB design of a Low Noise Amplifier of Electrical model

Figure 4-4 Test PCB and LNA measurement setup

45
 Figure 4-5 LNA measurement results using the Rohde & Schwarz ZVM vector network analyzer.

4.2. Measurement of PCB Model in comparison with schematic,

and Layout Design
On the schematic-level design, the simulation results of input reflection coefficient and forward voltage
gain are close to the required results.
On the layout-level, the simulation results of the input reflection coefficient and forward voltage gain have
dropped a bit in comparison to the required results.
However, as shown in Table 4-1, the measurement results show 8 dB power gain at 2.45 GHz frequency.
One explanation can be given also considering the increased value of the S11 that indicates that for the
manufactured LNA the input matching was not so good.

Table 4-1 comparisons between schematic, layout and PCB design of LNA

Type of design Gain (S21) dB Input Reflection coefficient (S11)

dB

Schematic 21 -23

Layout 21 -10

PCB 7.5 -2.2

46
Some considerations why these differences are presented here:
The required nominal values of several passive components were not available at e.g., Murata and other
companies. Other components were used as shown in Table 4-2. In addition problems with in the soldering
of the small components on the to the connectors and other SMD components are not placed properly,
which results in a small gap between the conductor layer and the respective components, with all these
situations put together causes a capacitive/inductive effect that in turn causes deviation. Noise figure was
not measured due to unavailability of equipment at the university laboratory [17].

Table 4-2 Comparisons between layout components - Manufactured components

Designator Layout Design Values Manufactured Layout values

Q1 BFP729 BFP720

R1 50 Ω 10 Ω
R2 1Ω 1Ω
R3 1Ω 1Ω

C1 10 pF 10 pF
C2 10 pF 10 pF
C3 2 pF 1 pF
C4 2.54 pF 0.5 pF
C5 30 pF 30 pF
C6 50 pF 50 pF
C7 5 pF 5 pF
C8 50 pF 50 pF
C9 30 pF 30 pF
C10 30 pF 30 pF
C11 50 pF 50 pF
C12 5 pF 5 pF
C13 50 pF 50 pF
C14 30 pF 30 pF

L1 0.25 nH 0.2 nH
L2 0.22 nH 2.4 nH

47
5. Conclusion and Further Work
The BFP720 transistor was chosen to implement a 2.45 GHz. low–noise-amplifier. BFP720 is a wideband
Silicon Germanium Carbon (Si G e: C) NPN Heterojunction Bipolar Transistor (HBT) device from Infineon
Technologies that can provide 0.5 dB noise figure at 2.4 GHz with a gain of 22 dB. The designed LNA is
summarized as follows:
 The Rogers Ro4350B substrate was used with H = 0.25 mm thickness and εr = 3.66
 The operation point of the transistor is {VCE= 3V, IC= 13 mA}
 The circuit includes the bias network that has the ability to isolate the DC path from RF path over
2.4-2.5 GHz frequency by means of RF chokes implemented with quarter-wave transmission lines
operating at 2.45 GHz
 The input matching network was designed with a good matching for noise figure the output
matching network was designed for maximum power gain with given input matching.
 The overall size of the RF LNA module is 48 mm× 50 mm
The design of LNA was performed following a typical radio frequency design methodology following
several steps: Transistor and bias point selection, design of the bias network, design of the matching
networks, prototype manufacturing, and measurement of the LNA. As differences between simulated and
measured results exist, post-simulations of the LNA were performed to understand their cause.
To minimize the area of the LNA module, the RF choke implemented with transmission lines were
optimized by squeezing function in ADS Momentum.
The simulation results of schematic level LNA are very close to the required conditions, e.g., the gain is
flat over a large frequency of 3 GHz and noise figure touches the minimum noise figure at 2.0 GHz – 2.5
GHz. The prototype measurement results have shown deviation from the simulation results. The measured
LNA power gain is 8.2 dB.
Though the measurement response differs from the simulated parameters, we consider that the results are
good as a functional RF circuit was demonstrated. Differences can be explained through the non-idealities
of the manufacturing process, e.g., soldering problems when very small components are used, and through
the slightly different component values that have been used. The acquired knowledge from this thesis work
has enlarged and completed my knowledge in the RF design field and also has contributed to my skills to
creatively use complex simulation tools.

48
6. References

1. Andres Moran Valerio, Alonso Perez Garrido. 2008. Design and Implementation of 6-8.5 GHz
LNA. Institute of Science & Technology, Linkoping University, 13.
2. Data Sheet, INFINEON Technologies, BFP720,. INFINEON. Accessed December 20, 2013.
http://www.infineon.com/.
3. David, M.pozar. 2001. "Microwave and RF Wireless System." Chap. 1. John Willey & Sons.
4. Electronic Communications Committee “ERC Recommendation 70-03”. http://www.erodocdb.
5. European Commission. Accessed September 12, 2014. http://ec.europa.eu/.
6. Federal Communications Commission “Authorization of Spread Spectrum Systems Under Parts
15 and 90 of the FCC Rules and Regulations". Accessed June 18, 1985.
7. Frenzel, Lou. "What’s The Difference Between The Third-Order Intercept And The 1-dB
Compression Points." Electronic Design. Accessed September 20, 2014.
http://electronicdesign.com/what-s-difference-between/what-s-difference-between-third-order-
intercept-and-1-db-compression-point.
8. "Gain compression tutorial." Keysight. Accessed March 10, 2015.
http://na.support.keysight.com/pna/help/latest/Tutorials/Gain_Comp.htm.
9. Ghosh, Smarajit. Network Theory Analysis and Synthesis. Prentice Hall of India.
10. Gonzalez, Guillermo. 1997. "Microwave transistor amplifiers: analysis and design". Prentice Hall.
11. Hall, David. "Understanding Intermodulation Distortion Measurements." Electronic Design.
Accessed March 12, 2015. http://electronicdesign.com/communications/understanding-
intermodulation-distortion-measurements.
12. "Harmonic Balance." Chap. 7. Agilent ADS Circuit Simulation Manual.
13. International Telecommunication Union. Accessed August 21, 2014. http://www.itu.int.
14. International Telecommunication Union, "Industrial, Scientific and Medical (ISM) applications of
radio frequency energy in the field of telecommunications.". Accessed August 30, 2014.
15. Mohammad Billal, Hossain. 2010. ""6-9 GHz Low-Noise Amplifier Design and Implementation"."
ITN, Linköping university, Norrköping, 59.
16. Muneeb Mehmood Abbasi, Mohammad Abdul Jabbar. 2012. "Design and Performance Analysis
of Low-Noise Amplifier with Band-Pass Filter for 2.4-2.5 GHz." ITN, linköping university,
Norrköping, 67.
17. Raja Muhammad Awais Khan, Sajid Zaheer. 2012. "Design and Implementation of a 7-8 GHz
Low-Noise Amplifier." ITN, Linköping university, Norrköping, 65.
18. Reinhold Ludwig, Pavel Bretchko. "RF Circuit Design." Chap. 2 ,4. New Jersey: Prentice-Hall.

49
19. RF & Microwave Theory "Amplifier Design Tutorial". Accessed December 14, 2014.
www.rfic.co.uk.
20. RFIC Microwave Theory. Accessed November 21, 2015. www.rfic.co.uk.
21. Roger R04350B data sheet. Accessed March 12, 2014. www.rogerscorp.com.
22. "Squeezing a Transmission Line While Maintaining its Length." KEYSIGHT TECHNOLOGIES.
Accessed JUNE 12, 2014. WWW.keysight.com.
23. Two-Port Networks. Accessed November 21, 2014. http://fourier.eng.hmc.edu.
24. Venkat Ramana. Aitha, Mohammad Kawsar Imam. 2007. "Low Noise Amplifier for Radio
Telescope at 1.42 GHz." School of Information Science, Computer and Electrical Engineering,
Halmstad University, Halmstad, 77.

50
Appendix 1 - BFP720 Transistor Model and S-Parameters

Transistor Model of BFP720

Figure A1: Transistor model of BFP720

BFP720 S-Parameters
! Infineon Technologies Discrete & RF Semiconductors
! BFP720
! VCE = 3.0 V, IC = 13 mA
! Common Emitter S-Parameters: Aug 2012
# GHz S MA R 50
! F S11 S21 S12 S22
! GHz MAG ANG MAG ANG MAG ANG MAG ANG
0.010 0.8290 0.3 30.172 179.8 0.0004 -15.4 0.9648 2.0
0.020 0.8350 -1.4 30.181 177.9 0.0010 89.5 0.9913 -0.4
0.030 0.8340 -2.1 30.239 177.4 0.0013 86.2 0.9922 -1.0
0.040 0.8332 -2.9 30.301 176.8 0.0016 84.2 0.9932 -1.5
0.050 0.8325 -3.7 30.365 176.2 0.0019 82.9 0.9943 -2.0
0.060 0.8320 -4.4 30.304 175.7 0.0022 83.7 0.9941 -2.5
0.070 0.8316 -5.2 30.246 175.1 0.0025 84.2 0.9939 -3.0

51
0.080 0.8314 -5.9 30.191 174.5 0.0028 84.6 0.9939 -3.6
0.090 0.8312 -6.7 30.140 174.0 0.0031 85.0 0.9939 -4.1
0.100 0.8313 -7.4 30.091 173.4 0.0034 85.3 0.9940 -4.6
0.110 0.8302 -8.1 30.037 172.8 0.0037 84.8 0.9931 -5.0
0.120 0.8293 -8.9 29.986 172.1 0.0041 84.4 0.9922 -5.5
0.130 0.8286 -9.6 29.940 171.5 0.0044 84.1 0.9913 -6.0
0.140 0.8280 -10.4 29.896 170.9 0.0047 83.8 0.9906 -6.4
0.150 0.8275 -11.2 29.857 170.3 0.0050 83.6 0.9899 -6.9
0.200 0.8227 -14.8 29.445 167.4 0.0068 82.5 0.9834 -9.2
0.250 0.8156 -18.5 29.130 164.4 0.0084 80.3 0.9766 -11.4
0.300 0.8080 -22.1 28.692 161.8 0.0100 77.9 0.9666 -13.6
0.350 0.8007 -25.6 28.276 159.2 0.0115 76.0 0.9577 -15.8
0.400 0.7929 -29.2 27.920 156.7 0.0131 74.6 0.9461 -17.9
0.450 0.7840 -32.7 27.496 154.2 0.0147 72.5 0.9363 -20.1
0.500 0.7754 -36.2 27.082 151.8 0.0161 70.8 0.9243 -22.0
0.600 0.7572 -43.2 26.349 147.2 0.0189 67.3 0.8986 -26.0
0.700 0.7385 -50.0 25.555 142.8 0.0216 64.0 0.8730 -29.9
0.800 0.7178 -57.1 24.867 138.5 0.0240 60.9 0.8460 -33.6
0.900 0.7001 -63.7 24.051 134.4 0.0262 57.8 0.8165 -37.2
1.000 0.6814 -70.3 23.254 130.4 0.0282 54.9 0.7867 -40.6
1.100 0.6631 -76.7 22.481 126.4 0.0301 52.1 0.7565 -43.9
1.200 0.6453 -83.0 21.706 122.7 0.0317 49.6 0.7271 -47.0
1.300 0.6293 -89.2 20.953 119.0 0.0332 47.2 0.6976 -50.0
1.400 0.6140 -95.1 20.186 115.6 0.0345 44.9 0.6692 -52.7
1.500 0.6002 -100.8 19.471 112.2 0.0357 42.9 0.6411 -55.2
1.600 0.5873 -106.4 18.796 108.9 0.0367 40.9 0.6154 -57.7
1.700 0.5759 -111.6 18.085 105.9 0.0376 39.2 0.5896 -60.1
1.800 0.5668 -116.4 17.420 103.0 0.0385 37.5 0.5664 -62.3
1.900 0.5579 -121.0 16.781 100.2 0.0392 36.0 0.5447 -64.3
2.000 0.5521 -125.3 16.182 97.6 0.0398 34.6 0.5246 -66.4
2.100 0.5451 -129.2 15.606 95.2 0.0404 33.4 0.5058 -68.1
2.200 0.5407 -133.1 15.061 92.6 0.0410 32.2 0.4875 -69.9

52
2.300 0.5361 -136.7 14.550 90.3 0.0414 31.1 0.4719 -71.6
2.400 0.5335 -140.3 14.064 87.9 0.0419 30.1 0.4566 -73.4
2.500 0.5296 -143.5 13.615 85.8 0.0424 29.2 0.4428 -74.9
2.600 0.5275 -146.7 13.185 83.6 0.0428 28.4 0.4292 -76.5
2.700 0.5252 -149.8 12.785 81.6 0.0432 27.6 0.4172 -78.0
2.800 0.5244 -152.9 12.402 79.4 0.0436 26.8 0.4056 -79.6
2.900 0.5217 -155.8 12.042 77.6 0.0440 26.1 0.3947 -81.1
3.000 0.5203 -158.7 11.696 75.6 0.0443 25.4 0.3841 -82.7
3.100 0.5167 -161.5 11.379 73.9 0.0446 24.8 0.3738 -84.1
3.200 0.5144 -164.4 11.074 72.1 0.0449 24.3 0.3637 -85.5
3.300 0.5134 -167.3 10.780 70.2 0.0453 23.7 0.3539 -87.1
3.400 0.5138 -170.3 10.498 68.2 0.0456 23.2 0.3444 -88.7
3.500 0.5155 -173.2 10.230 66.1 0.0459 22.6 0.3352 -90.5
3.600 0.5131 -176.1 9.975 64.4 0.0462 22.1 0.3256 -92.1
3.700 0.5121 -179.2 9.728 62.7 0.0465 21.7 0.3163 -93.9
3.800 0.5126 177.8 9.491 60.9 0.0468 21.2 0.3073 -95.8
3.900 0.5145 174.8 9.263 59.1 0.0471 20.8 0.2987 -97.8
4.000 0.5177 171.9 9.045 57.1 0.0475 20.3 0.2904 -99.9
4.100 0.5190 169.4 8.831 55.5 0.0477 19.9 0.2814 -102.1
4.200 0.5214 166.8 8.623 53.9 0.0480 19.5 0.2728 -104.5
4.300 0.5247 164.4 8.423 52.2 0.0483 19.1 0.2647 -107.0
4.400 0.5290 161.9 8.230 50.5 0.0486 18.7 0.2571 -109.6
4.500 0.5343 159.5 8.046 48.6 0.0489 18.3 0.2501 -112.5
4.600 0.5373 157.4 7.859 47.1 0.0492 18.0 0.2433 -115.3
4.700 0.5412 155.2 7.679 45.6 0.0494 17.7 0.2371 -118.2
4.800 0.5458 153.1 7.504 44.0 0.0496 17.3 0.2316 -121.3
4.900 0.5511 151.1 7.335 42.3 0.0498 17.0 0.2267 -124.6
5.000 0.5571 149.0 7.173 40.5 0.0501 16.6 0.2227 -128.0
5.100 0.5608 147.4 7.018 39.2 0.0503 16.4 0.2199 -130.7
5.200 0.5649 145.8 6.866 37.8 0.0505 16.2 0.2177 -133.6
5.300 0.5694 144.2 6.719 36.3 0.0507 15.9 0.2160 -136.4
5.400 0.5744 142.7 6.577 34.8 0.0510 15.7 0.2148 -139.4

53
 5.500 0.5798 141.2 6.439 33.2 0.0512 15.4 0.2142 -142.3
5.600 0.5826 139.9 6.312 31.9 0.0514 15.3 0.2151 -144.2
5.700 0.5856 138.7 6.189 30.6 0.0517 15.2 0.2162 -146.1
5.800 0.5889 137.5 6.068 29.2 0.0519 15.1 0.2175 -148.0
5.900 0.5924 136.3 5.952 27.8 0.0522 14.9 0.2191 -149.9
6.000 0.5962 135.2 5.839 26.3 0.0524 14.8 0.2209 -151.7
6.100 0.5966 134.1 5.733 25.1 0.0528 14.8 0.2219 -152.6
6.200 0.5972 133.1 5.631 23.8 0.0531 14.7 0.2231 -153.4
6.300 0.5980 132.0 5.531 22.5 0.0535 14.7 0.2242 -154.2
6.400 0.5990 131.0 5.434 21.1 0.0538 14.7 0.2255 -155.0
6.500 0.6002 130.0 5.340 19.7 0.0542 14.7 0.2267 -155.7
6.600 0.5988 129.0 5.255 18.5 0.0548 14.7 0.2256 -155.9
6.700 0.5976 127.9 5.171 17.3 0.0553 14.7 0.2244 -156.1
6.800 0.5966 126.9 5.091 16.0 0.0559 14.7 0.2232 -156.4
6.900 0.5958 125.9 5.013 14.7 0.0565 14.7 0.2221 -156.6
7.000 0.5952 124.9 4.937 13.4 0.0570 14.7 0.2209 -156.8
7.100 0.5951 123.7 4.871 12.1 0.0579 14.4 0.2190 -157.4
7.200 0.5953 122.6 4.808 10.8 0.0587 14.2 0.2172 -158.0
7.300 0.5956 121.4 4.747 9.5 0.0595 14.0 0.2153 -158.6
7.400 0.5963 120.2 4.689 8.2 0.0604 13.7 0.2135 -159.2
7.500 0.5972 119.0 4.634 6.8 0.0612 13.5 0.2117 -159.8
7.600 0.5994 117.5 4.575 5.4 0.0620 13.0 0.2089 -164.5
7.700 0.6020 116.0 4.519 3.9 0.0628 12.4 0.2075 -169.4
7.800 0.6051 114.5 4.466 2.4 0.0636 11.9 0.2076 -174.2
7.900 0.6086 113.0 4.416 0.9 0.0644 11.4 0.2092 -179.0
8.000 0.6125 111.5 4.369 -0.6 0.0653 10.9 0.2122 176.3
8.500 0.6393 102.9 4.050 -8.5 0.0682 8.0 0.2181 159.2
9.000 0.6748 95.0 3.730 -15.9 0.0715 5.1 0.2530 142.4
9.500 0.7202 88.5 3.421 -23.1 0.0740 1.6 0.3090 129.2
10.000 0.7643 82.8 3.105 -30.0 0.0748 -2.0 0.3735 119.0
10.500 0.7879 78.7 2.799 -35.1 0.0756 -4.0 0.4282 112.0
11.000 0.8023 77.2 2.603 -39.0 0.0780 -5.8 0.4707 108.2

54
11.500 0.8334 76.8 2.483 -44.2 0.0811 -8.6 0.5157 106.3
12.000 0.8614 75.2 2.334 -50.8 0.0824 -12.5 0.5599 103.8
!
! f NFmin Gammaopt rn/50
! GHz dB MAG ANG -
0.450 0.59 0.25 1 0.17
1.800 0.65 0.23 16 0.13
2.400 0.70 0.21 29 0.37
5.500 0.86 0.09 -13 0.17
10.000 1.05 0.42 -76 0.26
!
! (c) 2012 Infineon Technologies AG, Munich

55