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10 views

Lab 2

Uploaded by

shykatsorkarsktskp
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Southeast University

Department of
Electrical and Electronics Engineering

Summer: 2024

Course Code: EEE448

Course Name: Nano Electronics Device

Experiment No : 02

Experiment Name : Simulating I-V characteristic curve of a


MOSFET device design.

Submitted To Submitted By

Dr. Habiba Begum Name: Dewan Sadit


Lecturer Id: 2021100510026

Department of EEE Batch: EEE 11th (Evening)


Experiment no_2

Experiment name: Simulating I-V characteristic curve of a MOSFET device design.

Objectives: The objectives of this lab report on simulating the I-V characteristic
curve of a MOSFET device design are to design and define the MOSFET device
structure for simulation, utilize simulation software to model MOSFET behavior
accurately, simulate the I-V characteristics to understand current responses under
varying gate voltages, analyze the threshold voltage's impact on device switching
behavior, evaluate performance metrics like current levels and subthreshold swing,
optimize device operation based on simulation results, document findings
comprehensively, and enhance understanding of MOSFET behavior for future
design and application considerations. Through this lab, the aim is to bridge
theoretical knowledge with practical simulation, providing insights into MOSFET
performance and facilitating informed design decisions for enhanced device
functionality.

Theory: In the lab focusing on simulating the I-V characteristic curve of a MOSFET
device design, the theoretical foundation revolves around the fundamental
principles of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs).
MOSFETs are key components in modern electronics, operating based on the
modulation of current flow through a semiconductor channel via an electric field.
The I-V characteristic curve illustrates the relationship between the drain-source
current (I) and the drain-source voltage (V) for different gate-source voltages. The
threshold voltage is a critical parameter that determines the onset of transistor
conductivity, influencing the device's switching behavior. By simulating the I-V
curve, one can analyze how the MOSFET responds to varying gate voltages,
providing insights into its performance characteristics such as saturation, linear
region behavior, and subthreshold operation. Understanding the theoretical
aspects of MOSFET behavior and the interpretation of I-V curves is essential for
optimizing device performance and designing efficient electronic circuits.
Software name: Silvaco TCAD

Code:
go athena

line x loc=0.00 spac=0.10

line x loc=0.2 spac=0.006

line x loc=0.4 spac=0.006

line x loc=0.5 spac=0.01

line y loc=0.00 spac=0.002

line y loc=0.2 spac=0.005

line y loc=0.5 spac=0.05

line y loc=0.8 spac=0.15

init silicon c.boron=1.0e15 orientation=100 two.d

diffus time=250 minutes temp=1250 dryo2

etch oxide all

diffus time=50 minutes temp=1000 dryo2

deposit polysilicon thick=0.2 divisions=10

etch polysilicon left p1.x=0.35

diffus time=10 minutes temp=1000 dryo2


implant arsenic dose=5.0e14 energy=50 tilt=0 rotation=0 crystal

etch oxide left p1.x=0.2

etch oxide above p1.y=0.005

deposit aluminum thick=0.05 divisions=10

etch aluminum right p1.x=0.18

struct mirror right

electrode name=Gate x=0.50

electrode name=Source x=0.10

electrode name=Drain x=0.90

electrode name=Substrate backside

struct outfile=mosfet.str

tonyplot mosfet.str

### Simulate IV characteristics curve

go atlas

contact name=gate n.poly

interface qf=3e10
models srh cvt boltzman print numcarr=2 temperature=300

method newton itlimit=25 trap atrap=0.5 maxtrap=4 autonr nrcriterion=0.1 \

tol.time=0.005 dt.min=1e-25

solve init

solve vgate=1 outf=solve_tmp1

solve vgate=2 outf=solve_tmp2

solve vgate=5 outf=solve_tmp3

load infile=solve_tmp1

log outf=mos1.log

solve name=drain vdrain=0 vfinal=3.3 vstep=0.3

load infile=solve_tmp2

log outf=mos2.log

solve name=drain vdrain=0 vfinal=3.3 vstep=0.3

load infile=solve_tmp3

log outf=mos3.log

solve name=drain vdrain=0 vfinal=3.3 vstep=0.3

tonyplot -overlay mos1.log mos2.log mos3.log

quit
Design Result:
Discussion: In discussing the lab focused on simulating the I-V characteristic curve
of a MOSFET device design, it is crucial to delve into the theoretical principles of
MOSFET operation. MOSFETs play a pivotal role in modern electronics by
controlling current flow through a semiconductor channel using an electric field.
The I-V curve showcases how the drain-source current changes concerning the
drain-source voltage under different gate-source voltages, providing insights into
device behavior. The threshold voltage, a key parameter, determines when the
transistor starts conducting, affecting its switching characteristics. Analyzing the I-
V curve through simulation enables a deeper understanding of how the MOSFET
responds to gate voltages, shedding light on its operational regions like saturation
and linear behavior. This discussion underscores the significance of grasping
MOSFET theory and interpreting I-V curves for optimizing device performance and
designing efficient electronic circuits.

Conclusion: In conclusion, the lab on simulating the I-V characteristic curve of a


MOSFET device design has provided valuable insights into the operational
principles of MOSFETs and their performance characteristics. By analyzing the I-V
curve through simulation, a deeper understanding of how MOSFETs respond to
varying gate voltages and their switching behavior has been gained. The
significance of the threshold voltage in determining transistor conductivity and
operational regions like saturation and linearity has been highlighted. This lab has
emphasized the importance of theoretical knowledge in optimizing MOSFET
performance and designing efficient electronic circuits. Moving forward, the
insights gained from this exercise can guide future MOSFET designs and
applications, enhancing overall understanding and proficiency in semiconductor
device analysis and design.

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