TOGETHER WE CAN ACHIEVE MORE

COURSE NAME: ELECTRONIC DEVICES LAB

(STUDY OF TRANSISTOR CHARACTERISTICS IN
COMMON EMITTER AMPLIFIER)

SOLVED BY

Christopher Andrew Guda

Abstract:

A bipolar junction transistor (BJT) is a three-terminal semiconductor device. It is widely used in

both discrete and integrated circuits. BJTs are primarily used in analog circuits. BJTs, for example,
are used in amplifiers, particularly high-speed amplifiers. BJTs can also be used in digital circuits,
but field effect transistors are now used in the majority of digital circuits (FETs). BJTs have three
operating modes: active mode (amplifying mode), cut-off mode, and saturation mode. To be used
as an amplifier, a BJT must be in the active mode. To be used as a digital circuit element, a BJT
must operate in both the cut-off and saturation modes.

Theory and Methodology:

Each BJT is made up of two anti-serially connected diodes. The BJT can be implemented as either
a npn or a pnp transistor. In both cases, the center region serves as the transistor's base (B), while
the outer regions serve as the collector (C) and emitter (E). Metal (e.g., aluminum) contacts are
used to connect external wires to the p and n regions (transistor terminals).

The figure below depicts a cross section of two types of BJTs, one with an emitter-base junction
and one with a collector-base junction. Because both types of carriers (electrons and holes)
contribute to the overall current, npn and pnp transistors are referred to as bipolar transistors. In
the case of a field effect transistor, the current flow is determined by either the electronics or the
holes. A field effect transistor is thus a unipolar device. The geometry of the device (for example,
the width of the base region) and the doping concentrations in the individual regions of the device
control the current and voltage amplification of a BJT. To achieve high current amplification, the
doping concentration in the emitter region is usually higher than in the base region. The base is a
thin, lightly doped region between the emitter and the collector that regulates the flow of charge
carriers from the emitter to the collector region.
Apparatus:

• Trainer Board
• Transistor C828
• Resistors: 1kΩ, 10KΩ
• DC Power supply
• Multimeter
• Power Supply cables

Circuit Diagram:

Experimental Procedures:

1. The terminals of the transistor were identified and the value of Beta was recorded.
2. The connections were made sure to be as of shown in the above figure.
3. For input characteristics, the voltage VCE was fixed and then voltage VBB was varied.
Thereafter the base current IB was calculated IB= (VBB-VBE)/10k.
4. For the output characteristics, the input circuit was opened. Thereafter the collector voltage
VCC was varied in steps. And collector current Ic was calculated
Ic = (Vcc-VCE)/1k
5. Now the input circuit was closed and the base current IB was fixed at 50uA by varying VBB.
Thereafter the voltage VCC was varied according to the table and IC was calculated in each
step. The process was repeated for the other values of IB
6. The graph of input and output characteristics was plotted and Q-point was located.
 Experimental Data:

1. Input characteristics:

Vcc = 8V Vcc = 16V

VBB (V) VBE (V) IB (mA) VBB (V) VBE (V) IB (mA)

0 0.0114 0 0 0.0110 0

0.5 0.528 0.0007 0.5 0.535 0.00021

1 0.699 0.0415 1 0.692 0.03555

1.5 0.702 0.0864 1.5 0.718 0.08330

2 0.705 0.1354 2 0.726 0.13180

2.5 0.708 0.1881 2.5 0.730 0.18360

2. Output characteristics

IB = 0μA IB = 50μA IB = 100μA

VCC (V) VCE (V) IC (mA) VCC (V) VCE (V) IC (mA) VCC (V) VCE (V) IC (mA)
0 -0.0241 0 0v 0.0033 0.0272 0v 0.0049 0.0284

4 4.08 0 4v 0.1134 3.9200 4v 0.0784 4.0000

8 8.12 0 8v 0.1765 7.9100 8v 0.1115 7.9400

12 12.07 0 12v 0.582 11.210 12v 0.1424 11.780

16 16.14 0 16v 3.26 12.580 16v 0.1887 15.700

 Base Current, IB vs Base Emitter Voltage, VBE
0.2
0.18
0.16
0.14
0.12
IB (mA)

0.1
0.08 16 V
0.06 8V
0.04
0.02
0
-0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VBE (V)

Figure: Input Characteristics

Collector current, IC vs Collector Emitter voltage, VCE

18

16

14

12
IC (mA)

10
IB=0 uA
8
IB=50 uA
6 IB=100 uA
4

0
-2 0 2 4 6 8 10 12 14 16
VCE (V)

Figure: Output Characteristics

 Simulation Data:

1. Input characteristics:

Vcc = 8V Vcc = 16V

VBB (V) VBE (V) IB (mA) VBB (V) VBE (V) IB (mA)

0 0.000000131 0 0 0.000000262 0

0.5 0.4996 0.000355 0.5 0.4996 0.00035

1 0.7065 0.02934 1 0.7065 0.02935

1.5 0.7226 0.07746 1.5 0.7351 0.07649

2 0.7235 0.12765 2 0.7438 0.12562

2.5 0.7243 0.17757 2.5 0.7445 0.17555

2. Output characteristics

IB = 0μA IB = 50μA IB = 100μA

VCC (V) VCE (V) IC (mA) VCC (V) VCE (V) IC (mA) VCC (V) VCE (V) IC (mA)
0 -0.0241 0 0v 0.0033 0.0272 0v 0.0049 0.0284

4 4.0 0 4v 0.1134 3.9200 4v 0.7840 4.0000

8 8.0 0 8v 0.1765 7.9100 8v 0.1115 7.9400

12 12.0 0 12v 0.582 11.210 12v 0.1424 11.780

16 16.0 0 16v 3.26 12.580 16v 0.1887 15.700

Discussion:

1. The steady-state DC voltage or current at a particular terminal of an active device, such as

a transistor, when no input signal is supplied is known as the operating point of a device,
also known as a bias point, quiescent point, or Q-point. The significance of Q point are as
the following:
a. It enables us to get a linear analysis for non-linear parts like transistors and diodes.
b. It ensures that the optimum operating point of the non-linear device is used in
operation.
2. In cut off region, both emitter-base and base-collector junctions are in the reverse bias and
no current flows through the transistor. The transistor acts as an open switch.
3. In the active region, emitter-base junction is forward biased and the base-collector junction
is reverse biased. Here, the transistor acts as an amplifier. The collector current is amplified
to β times the base current.
4. In the saturation region, both emitter-base & base-collector junctions are forward biased
and the transistor acts as a closed switch. The saturation region is used for digital circuitry.

References:

1. Adel S. Sedra, Kennth C. Smith, Microelectronic Circuits, Saunders College

Publishing, 3rd ed., ISBN: 0-03-051648-X, 1991.
2. American International University–Bangladesh (AIUB) Electronic Devices Lab
Manual.
3. David J. Comer, Donald T. Comer, Fundamentals of Electronic Circuit Design,
john Wiley & Sons Canada, Ltd.; ISBN: 0471410160, 2002