SEMICONDCTOR

used to make
types of material which
are
these are special minimum

SEMICONDUCTOR

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Energy band diagram for atom
a atom is
potential energy of
curve
band diagram
basically energy

single atom Isolateatom

Pot energy of this e
in the E F nuclei
g of
i i
I e
k i

l v k
l l
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i in nature
for nearby orbit for outy.frxit
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tax

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this graph is in negative

side because of e

is bounded with nuclei

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t
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this is 3 region
in which 1
orbit
of
e
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point to

f for
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1 Nuclei

it
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are arranged
in
election in each atom
loule like is 2s up
discrete energy state
some quantum
each energy level
has

state can have almost one

each quantum
1 1 Amine
48
for Isolate Na atom d e

Na 0 1 the 1st 2,2 2ps

valence shell

kamael
6 filled

fired
a
 band diagram
Energy of teyde

ammo e
as orbit
of toits any off is orbit e
due energy
due to atom
fits

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iiii
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emittentfont state
atom interet significantly
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one

with its neighbour's and this changes the energy level of

quantum state
are turned
splitand
the sharply defined energy level

one

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 solidlated engffan
4 Iron An atom

It F as

2s

is
is

Note level shell

In a atom's e are occupy energy
single in also in the
in case of solid an e of one atom due to
the other atoms in Surrounding
influence of
levee are modified
energy
 Na I 28
outer orbitt

atom I am in
TIMITSolate
orbitt
fixed energy
fffhhfgfnfrfhff.in
level
solid collection
of band
every
we called energy

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VALENCE BAND
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008
Actualspacing 9,9
Energy band diagram for a septal
t
conj overlap regionof common
free e

N
I I flever
fqÑfngg
Bound e

All e in the overlapping region of orbit in lattice

structure are free to move in whole lattice
these

e are
free e
 E F than free e valence
we applied ext
Note
If in conduction band are
more and those e

conduct
electricity
I B

fi
EfEf efo

r
i
 ALEXIE BAND
band of abode
It is maximum energy
because
current
e present in v B do not participate in
E f
these e does not take energy from
of
vB Nexes empty

itit.trgite
II.it
e
m

present in
if fatf
participate in current
c B
because of

these e take energy from E F

semicon
and partially filled for
C B is empty
for Insulator
Forbidden
energy gap
bw C B and v B there no e present
the energy gap

Eg CB min Imax I iii B min

Eg

in solid to transfer a e from

c B min
V B to energy required
is equal to
DEg Bound e

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If
Deg
in Q not given
E 3kt If
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this
If energy given
by
photon

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on in temp decreases in solid

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we increase temp
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on c si in increasing energy of Eg
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in a solid forbidden
energy gap is equal to 21
find out
wavelength incident photon to free a e
of
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y
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e a

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1 in v.rs
topmost level of
T ok
1
fermi level is defined at ok because
of
onlye level
due to thermalagitation present in energy
above Fermi level

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ok e exist upto fermi
band above v B
onlyare
empty
 Inmate metal

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which valence e are DE 5
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inconderetofermilence Max energy of v is

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why
 SEMICONDUCTORI
except i are behave as
enfamilyII
All member
of
semiconductor
covalent bond
o In semiconductor 4 valence e they form
with their neighbour atom's

At ok temp Insulates behave

as pure Insulator

REID Insulator
c
semiconductor's
I
f
e

a III conductor's
5pm

Intrinsic semiconductor

Si is 25 2p6 valence shell

a s available 8
a s 4
fried
a s empty 4
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it
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if
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items
for Ge In general I e n pair is
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e
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i crystal is muted
 In intrinsic semiconductor in c 13 is
free e
density
e

equal to hole nn in v.is that is turned

density
as intrinsic semiconductor's

he hn ni

NI ni depends upon
temp

17i n.EE
no AT

Generation and Recombination of

lJi AtefE
e h pain

in pure semiconductor me n

due to thermal agitation continously

new e n pair are generated

perunit volume at same time other e h disappear due to

Recombination
of e h fair
incombinat
At due to generation
a
giventemp continously
holes
of e h
fair avg
concentration
of e are

remains constant

absorb during formation of e h pain

thermal energy
Ffegetead
recombination
is equal during of
e h
pain this kept Crystal lattice in
thermal equilibrium T const
 eg
Current in semiconductor

Ist n u
e
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si
siE.fmgEees I III
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current

Current in semiconductor's

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f

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a e

unent due to
e
of
Ie t In total
to
Total
 SEMICONCTOR to
EXTRENSIC SEMICONDUCTOR ORDOPPED low
are
pure s c Cintrinsic very
Conductivity of we can't use
also that's why
temperature dependent electric device
semiconductor to form
pure
toreduce conductivity
To increase conductivity
on temp we mined some impiety
dependency
we called clopping
and this process
Concentration
Its EIin103atomtoiiniosatnthesetmp.in
si
Impurity atimisplace
atom in itycrystal
NTP.SI fft Ieent
impunity
concentration
P

in 107 atom's
As Sb Bi

Impurity covalent
values
e
four
e form
out of five
bond to neighbor siafid.int fiesat tffa
atom we called
verysmanenergytthatwhyth.is
impunity
one impurity
because
donor
Impurity of
atom donet one to crystal
free
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 After dopping Got 0 Neutral

side
donor impurity
donotale by
on to e e no hole present
this
for free
e si in crystal

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My

e due to donor

4 Imply
T.ie iittihy

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er If
on a

In
donor
required
to shift
5th e
of
Note energy r
o o e
is equal to
Impurity
 he mn
semiconductor current dueto e
majority
In N type flow

P Type SEMICONDUCTOR allent Impurity A1 I

in p type s c we dopped try
concentration 1 in 1 atom
Impurity

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there no
atom
Impurity

6 1 has
semiconductor
cement in p type
is due to how majority
any o on crystal
After dropping

0 its is neutral

ff

IF.it
Affinity energy

agitation
waggingyepwitgual
 required to transfer one from sito
energy
is 0

Impurity

has me
0

N semiconductor
p type type
1
After dopping
are neutral 9m

Action low r
Mass
the
we know that at thermal equilibrium
does
e hole contration not
product
depends
of on donor or acepter dopping and
as
is given
It
the.mn 7 fgarsaetinlan
for p type

a t.IE
n Macepter he Donor
 Mex Mn 7
Met mn up
next ME onor.hn is

D
1ne
no.ge
in p type
semiconductor no hole in
of n type

Indoppets c.my IfdnoEimpmitybelow

C B by 43 Me
find
out temp required to shift
c B let additional
donor to
this e
from impurity to KT
thermal energy e is equivalent
of
KB 8 6 e
lie

Left.IE t m5onor
Impurity
Erequired Ethermal

43 men KT
VB 43 106 e v 8.6 78 f

T 0OkdI
 semiconductor we dropped 102 Atom ms AS
In pure
2
of
atom
and 5 10 Atom m
of In
Impurity
out entrensis s c
find type of
valent
As pentavalent
In
Try
p_types
types

Me donor
2 18 my haceptet
5 18

sin a.am
In pure 5 18Atomy
dopped As
2 1016 Atomms than we
Impurity
find out he 7

In s c
pure n hn ni 2 166 Atomm

As pentavalent
5 102 Atm m me
MDonor

ni he hn
7 ND n
 m
Fs In
1

in pure
si.sk tmitrenpair
mixed Impurity
concentration is

2 1010 Now we
equal to m 106semiconductoratom
atom in
Such like that 1 Impurity si is 102 3
atomic density of
If
find out
he n

hi 2 1016 ms
1
106 atom si Impunityatom
out of
of
I
I atom in

1028 10
atom
1028 atom si Impurity Aty
of
Concentration durto 10
free e e
nor
Impurity
he uh hi
 mn 4 10 alms

e hole concentration
is equal to a x d
In si s e
pure 102Alms in semiconductor
As mixed 5
If Impurity
atom donate
e than me
find
n

80
Impurity
If 1016
Ni 2 m

atom 5 10 m
Total No of Impunity
801 atom
free e due to dopping of Impunity
8 5 1021
0

fnet 4X104fm3
Donofnex.hn hi

hi

mn
E e
 cubic metre of sodium
Calculate the number ofstates per
sodium in 1013Kelms How
in 3s band the density of
them are empty
many of
1
No
of wok
No atom Na
of 6.023 10
I 101310L

2.05xiof totaldo.ly f
IN

I
fifth 3s 1 Is
a s empty of

35 2 No fatom
0 s availablefor
Total No of for N atom

a s empty

A
 semiconductor the number conduction
In a
pure of holes
s
electron e 6 10 per cubic meter How many
are there in a sample of size
icmxlanxte.VE
b
an 1cm x 1mm

no.am t.ms i y
1019
no e in volume Ne 6
of free 1019 7
6 10

6
102
in pure
he an

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