Dual Active Bridge Converter Third Draft
Dual Active Bridge Converter Third Draft
FOURTH DRAFT
1
Dual Active Bridge Converter
1 Introduction
The dual active bridge, a bidirectional, controlled, dc-dc converter with high power capabilities, is made
up of dc-link capacitors, a high frequency transformer, eight semiconductor devices, and an energy transfer
inductor. A more straightforward description of the converter would be a standard full-bridge with a
controlled rectifier. This converter’s symmetry—its primary and secondary bridges are identical—allows
it to manage power flow in both directions, which is why it’s used for a variety of high-power applications.
[1].
The topology is shown in Fig. 1, where V1 and V2 are the dc-link voltages, L1 is the leakage inductance
of the transformer plus any necessary external energy transfer inductance , and S1−4 and Q1−4 are
the controllable semiconductor switches. Depending on the needs for power transfer, there are several
configurations and constructions for the Dual Active Bridge system. A 2011 study titled ”High-frequency
design considerations of dual active bridge 1200 V SiC MOSFET DC-DC converter” explored how SiC
and high frequency could be used to improve the dual active bridge’s power density even more. [2].
Various control strategies [3] are formulated for the control and power transfer of DAB converter.They
are broadly classified as follows. Single-Phase Shift (SPS) involves phase-shifting only one bridge, offering
limited control. Double-Phase Shift (DPS) provides a wider control range by phase-shifting both bridges.
Triple-Phase Shift (TPS) introduces a third phase shift, further enhancing control flexibility. Equal-Phase
Shift (EPS) maintains equal phase shifts between the bridges, simplifying control but limiting the output
voltage range. The choice of control strategy depends on factors such as desired output voltage range,
power level, efficiency, and control complexity.
1.1 origin
In ”A three-phase soft-switched high power density DC/DC converter for high power applications” [4]
from 1988, the Dual Active Bridge circuit was first employed with a thyristor. (DAB) operation. It
was mainly designed for three phase power transfer through DAB. This paper was further modified to
journal to include indepth control analysis in 1991 [5]. One conference paper by the title ”Performance
characterization of a high power dual active bridge DC/DC converter” shows use of IGBT for a 50 KW
setup [6].
2
S1
S3
D1 D3
S1 S3
D1
Switch L
D3 +
Switch
T
1 Switch Switch VB
C
_
C
+
VB
_ n:1 S4
S2 S4
S2
D2
D4 D2 D4
VO lags VI by an angle ϕ
X = reactance of per transmission line.
On the per phase basis power on sending end,
SI = PI + jQI = VI I ∗
(1)
SO = PO + jQO = VO I ∗
where SO is total output power, PI ,PO and QI ,QO are active and reactive input and output power and
I is the current flowing from input to output which can be written as
VI − VO
I=
jX
∗ ∗ (2)
V I − VO
I∗ =
−jX
3
Now
VI = |VI | ̸ 00 so,,VI = VI∗ = |VI |
(4)
VO = |VO | ̸ − ϕ = |VO | e−jϕ .
Using above values equation (3) becomes
|VI | V) j1 2
SO = PO + jQO = sin ϕ + |VO | − |VI | |VO | cos ϕ (5)
X X
The active power transfer between the two buses can be written as depending on power angle or load
angle ϕ.
|VI | |VO |
PO = sin ϕ (6)
X
This clearly tells that power transfer happens due to phase shift B.
4
500
1000
1000
-1000
50
-100
2000
-2000
The symmetry of the current waveform IL through the leakage inductance allows for the following
power flow analysis to be developed using a half switching period. The inductor current waveform can
be expressed as:
vo I1 + I2
vi + = Lk , for 0 < t < dT (8)
n dT
vo I1 − I2
vi − = Lk , for dT < t < T (9)
n (1 − d)T
With n being the turns ratio of the transformer, T being the duration of a half-cycle of the period, I1 and
I2 being the inductor current during switching instances, and d being the phase shift duty percentage of
the two bridges, which will be referred to as the duty cycle of the converter. The inductor current, input
current and output current of DAB over half cycle is shown in Fig. 4. From Fig. 4(a), the following
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I1
I2
-I2
-I1
t1 t2
I1
I2
dT
T
n.Io
I1
I2
dT
Figure 4: (a) leakage inductance current with some important parameters. (b) input current (ii ). (c)
output current on the primary side of the converter (nio ), both used to calculate the proposed averaged
model.[7]
T vo vo
I1 = 2 d + vi − (12)
2Lk n n
6
T vo
I2 = 2vi d − vi + (13)
2Lk n
!
2 vno d + vi − vno
t1 = T (14)
2 vi + vno
!
2vi d − vi + vno
t2 = T . (15)
2 vi + vno
The output average current injected into the output cell, comprising the load and the output capacitor,
is calculated using Fig. 4(c) as
1 1 1 1
lo = I1 t1 − I2 t2 +(1−d) T I2 +(1−d) T (I1 −I2 ) (16)
nT 2 2 2
Using (6)–(9), the expression of the output average current (10) can be simplified as
(1 − d) dT vi
lo = . (17)
nLk
Using a similar analysis to the one described previously to obtain the average output current, the
average input current can be obtained as
1 1 1 1
ll = I2 t2 − I1 t1 + (1 − d) T (I1 + I2 ) . (18)
T 2 2 2
Once again, using (6)–(9), the expression of the input average current can be simplified as
(1 − d) dT vo
ll = (19)
nLk
From this the average output power can be derived:
(1 − |d|)dT vi vo
P = vo Io = (20)
nL
where T = 1/fs . Throughout the analysis, τ is used to denote the time within a period, referenced to
the rising edge of s1 . Similarly, at output bridge
vo (τ ) = s2 (τ )Vout (τ ) (23)
7
If we select transformer current, il , and output capacitor voltage, vo , as state variables, then the state
equations of a DAB converter can be derived as
dil (τ ) s1 (τ ) s2 (τ )
= Vin (τ ) − Vout (τ ) (25)
dτ L L
and
dvo (τ ) 1 s2 (τ ) Io
=− vo (τ ) + il (τ ) − (26)
dτ RCo Co Co
Equations (20) and (21) are both time-varying and nonlinear. To derive a linear time-invariant model,
the next step is to apply averaging. The basic idea behind averaging is to represent a state variable, x(),
during the interval t − T ≤ τ ≤ t, using its Fourier series. In equation (21), Io is the equivalent output
current. R is the equivalent parallel resistance at the output due to parasitics and C0 is the output dc
link capacitance.
∞
X
x(τ ) = ⟨x⟩k (t)ejkωs τ (27)
k=−∞
where ωs = 2πfs , and complex number <x>k (t) is the kth coefficient in the Fourier series.
1 t 1 t 1 t
Z Z Z
−jkωs τ
⟨x⟩k (t) = x(τ )e dτ. = x(τ ) cos kωs τ dτ − j x(τ ) sin kωs τ dτ (28)
T t−T T t−T T t−T
This formulation is equivalent of <x>k (t) , where τ = t − T + s and s ∈ [0, T ).
(a) leakage inductance current with some important parameters. (b) input current (ii ). (c) output
current on the primary side of the converter (nio ), both used to calculate the proposed averaged model
Conventional state-space average can be applied when the ripples in state variables are small, which, in
fact, only considers dc terms (k=0) in (21) and (22). However, the transformer current in a DAB converter
is purely ac, meaning ripple is large and the dc term is zero. The generalized averaging technique uses
more terms in the Fourier series to represent more details in the model. In the case of DAB converters,
it is natural to include more terms (both k=0 and k=±1) in the Fourier series to represent the averages
of state variables.
the derivative of the kth coefficient for variable x is
d d
⟨x⟩k (t) = x (t) − jkωs ⟨x⟩k (t) (29)
dt dt k
d
where dt x represents the average of the differential of a state variable in (20) and (21). The kth
k
coefficient of the product of two variables x and y is
∞
X
⟨xy⟩k = ⟨x⟩k−i ⟨y⟩i . (30)
i=−∞
Consider that the 1st coefficient and the 1st coefficient in Fourier series are complex conjugates, the
product of zeroth coefficient terms is
⟨xy⟩0 = ⟨x⟩0 ⟨y⟩0 + 2 (⟨x1R ⟩⟨y1R ⟩ + ⟨x1I ⟩⟨y1I ⟩) (31)
and the 1st coefficient terms are
⟨xy⟩1R = ⟨x⟩0 ⟨y⟩1R + ⟨x⟩1R ⟨y⟩0 (32)
⟨xy⟩1I = ⟨x⟩0 ⟨y⟩1I + ⟨x⟩1I ⟨y⟩0 (33)
where the subscripts “R” and “ I” mean the real and the imaginary parts of a complex number, respec-
tively. Applying (24) and (26)– (28) to the state-space equations in (20) and (21), the zeroth and 1st
coefficients of state variables Il and vo are
d⟨il ⟩0 1 2
= +
dt L⟨s1 ⟩0 ⟨vi ⟩0 L⟨s1 ⟩1R ⟨vi ⟩1R
2
+ (34)
L⟨s1 ⟩1I ⟨vi ⟩1I − L1 ⟨s2 ⟩0 ⟨vo ⟩0
2 2
+ ⟨s2 ⟩1R ⟨vo ⟩1R + ⟨s2 ⟩1I ⟨vo ⟩1I
L L
8
d⟨il ⟩1R
= ωs ⟨il ⟩1I
dt
1
+ (⟨s1 ⟩0 ⟨vi ⟩1R + ⟨s1 ⟩1R ⟨vi ⟩0 ) (35)
L
1
− (⟨s2 ⟩0 ⟨vo ⟩1R + ⟨s2 ⟩1R ⟨vo ⟩0 )
L
d⟨il ⟩1I
= −ωs ⟨il ⟩1R
dt
1
+ (⟨s1 ⟩0 ⟨vi ⟩1I + ⟨s1 ⟩1I ⟨vi ⟩0 ) (36)
L
1
− (⟨s2 ⟩0 ⟨vo ⟩1I + ⟨s2 ⟩1I ⟨vo ⟩0 )
L
and
d⟨vo ⟩0 1 1
= − ⟨iN ⟩0 − ⟨vo ⟩0
dt Co RCo
1 2
+ ⟨s2 ⟩0 ⟨il ⟩0 + ⟨s2 ⟩1R ⟨il ⟩1R (37)
Co Co
2
+ ⟨s2 ⟩1I ⟨il ⟩1I
Co
d⟨vo ⟩1R 1 1
= − ⟨iN ⟩1R − ⟨vo ⟩1R + ωs ⟨vo ⟩1I
dt Co RCo
(38)
1 1
+ ⟨s2 ⟩0 ⟨il ⟩1R + ⟨s2 ⟩1R ⟨il ⟩0
Co Co
d⟨vo ⟩1I 1 1
= − ⟨iN ⟩1I − ⟨vo ⟩1I − ωs ⟨vo ⟩1R
dt Co RCo
(39)
1 1
+ ⟨s2 ⟩0 ⟨il ⟩1I + ⟨s2 ⟩1I ⟨il ⟩0 .
Co Co
It is assumed that the dynamics of the input voltage and the load is much slower that those of the DAB
converter. Therefore, <vi >0 = Vi , <vi >1R = <vi >1I = 0, <iN >0 = iN , and <iN >1R = <iN >1I = 0.
Next, it is necessary to find the coefficients of switching functions s1 (t) and s2 (t). Because of the fixed
50% duty ratio, the zeroth coefficients of s1 (t) and s2 (t) are both zero as the dc component of perfectly
symmetrical square wave is zero.
⟨s1 ⟩0 = ⟨s2 ⟩0 = 0. (40)
The 1st coefficients of s1 (t) and s2 (t) are
⟨s1 ⟩1R = 0
2 (41)
⟨s1 ⟩1I = −
π
and
2 sin dπ
⟨s2 ⟩1R = −
π (42)
2 cos dπ
⟨s2 ⟩1I = − .
π
Finally, substitute (35)–(37) into (29)–(34), and organize differential equations into matrix represen-
tation in (38) , –¿ where X=[(vo )0 (il )1R (il )1I (il )0 (vo )1R (vo )1I ]T . In (38), (il )0 , (vo )1R , and (vo )1I are
all zero if their initial values are zero. The dynamics of il0 , (vo )1R , and vo1I are decoupled from the rest
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of system.
1 4 sin (dπ) 4 cos (dπ)
− RC −
πCo
−
πCo
0 0 0
o
1
2 sin (dπ)
0 ωs 0 0 0
0 −
Co
πL
0 0
2 cos
(dπ)
d
−ωs 0 0 0 0 2
Vi
πL
X=
4 sin (dπ) 4 cos (dπ) −
X + 0 .
dt πL I
0 0 0 0 N
0 0
πL πL
2 sin (dπ) 1 0 0
0 0 0 − − ωs
πCo RCo 0 0
2 cos (dπ) 1
0 0 0 − −ωs −
πCo RCo
(43)
Therefore, the state-space representation in (38) can be equivalently reduced to
(a) leakage inductance current with some important parameters. (b) input current (ii ). (c) output
current on the primary side of the converter (nio ), both used to calculate the proposed averaged model
− RC 1
− 4 sin(dπ) − 4 cos(dπ) − C1o
vo0 πCo πCo vo0 0
d o
vi
it1R = 2 sin(dπ) × it1R + 0 0 (44)
πL 0 ωs
iN
dt
2
it1I 2 cos(dπ)
−ωs 0 it1I − πL 0
πL
The state equation in (39) indicates that the dynamics of DAB dc–dc converters can be represented using
the zeroth coefficient of output voltage and the 1st coefficients of transformer current as state variables.
If more terms in the Fourier series were used, then the model would be more accurate. However, the
resulting model would be too complex to provide insightful information for controller design.
Vp = Vd ; Vs = Vo (1)
Then, the secondary voltage referred to the primary side will be:
VO
VS′ = − = −VO′ (2)
n
Now, the voltage across the inductor and thus the current through the inductor will be given by:
The switches S1 and S4 of the primary bridge will continue to conduct, and gate pulses are given to
switches Q1 and Q4 of the secondary bridge in the second interval. The voltages VP,VS and VLK for
this interval will be given by the following equations:
In the third interval, switches S1 and S4 of the primary bridge are turned off while S2 and S3 are switched
on and Q1 and Q4 on the secondary bridge will continue to conduct. The voltages VP,VS, and VLK for
this interval are:
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During the fourth interval, switches S2 and S3 are conducting on the primary bridge, and switches Q2
and Q3 start conducting now on the secondary side. The equation for the voltages are:
Assuming VP greater than VS, the current through the inductor will rise or fall depending on the voltage
across the inductor. Corresponding voltages VP,VS,VLK and inductor current (ILK) are shown in Fig.
3. Further, the input and output current can be written in terms of the inductor current for the four
intervals are given below.
diLK
L = VLK = VP − VS′ (10)
dt
Assuming the change in inductor current to be linear, in the first interval:
I1 + I2 Vd + VO′
= (11)
DT L
Or
Vd + VO′
I1 + I2 = DT (12)
L
Input and output currents are:
ii = iLK ; io = −iLK (13)
where, T=Ts2,ii= input current, io= output current. In the second interval:
I1 − I2 Vd − VO′
= (14)
(1 − D)T L
Or
Vd − VO′
I1 − I2 = (1 − D)T (15)
L
ii = iLK = io (16)
Figure 5: (a) Primary voltage(b) secondary voltage(c) inductor current for forward power flow.[9]
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Figure 6: (a) Primary voltage(b) secondary voltage(c) inductor current for reverse power flow.[9]
Figure 7: (a) Primary voltage(b) secondary voltage(c) inductor current for forward power flow.[9]
12
Figure 8: (a) Primary voltage(b) secondary voltage(c) inductor current for for reverse power flow.[9]
References
[1] B. Zhao, Q. Song, W. Liu, and Y. Sun, “Overview of dual-active-bridge isolated bidirectional dc–dc
converter for high-frequency-link power-conversion system,” IEEE Transactions on Power Electronics,
vol. 29, no. 8, pp. 4091–4106, 2014.
[2] A. Kadavelugu, S. Baek, S. Dutta, S. Bhattacharya, M. Das, A. Agarwal, and J. Scofield, “High-
frequency design considerations of dual active bridge 1200 v sic mosfet dc-dc converter,” in 2011
Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2011, pp.
314–320.
[3] Y. A. Harrye, K. Ahmed, G. Adam, and A. Aboushady, “Comprehensive steady state analysis of
bidirectional dual active bridge dc/dc converter using triple phase shift control,” in 2014 IEEE 23rd
International Symposium on Industrial Electronics (ISIE), 2014, pp. 437–442.
[4] R. De Doncker, D. Divan, and M. Kheraluwala, “A three-phase soft-switched high power density dc/dc
converter for high power applications,” in Conference Record of the 1988 IEEE Industry Applications
Society Annual Meeting, 1988, pp. 796–805 vol.1.
[5] ——, “A three-phase soft-switched high-power-density dc/dc converter for high-power applications,”
IEEE Transactions on Industry Applications, vol. 27, no. 1, pp. 63–73, 1991.
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[6] M. Kheraluwala, R. Gasgoigne, D. Divan, and E. Bauman, “Performance characterization of a high
power dual active bridge dc/dc converter,” in Conference Record of the 1990 IEEE Industry Applica-
tions Society Annual Meeting, 1990, pp. 1267–1273 vol.2.
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