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Tutorial MOS

mos practice questions from razavi and pierrot

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19 views

Tutorial MOS

mos practice questions from razavi and pierrot

Uploaded by

kripalinisethi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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GE-108

MOS-CAP and MOSFET-Tutorial


IIT Ropar

1. Solve problem 16.7, 16.9 (a-e) of RF Pierret.

2. Solve problem 16.11 (a-b) of RF Pierret.

3. Practice solved exercise 16.3 (pg. 583) of RF Pierret.

4. Plot the C-V of MOS-CAP with p-substrate and n-substrate at high and low frequency, as-
sume the flat-band condition at equilibrium.

5. In a MOS capacitor take a p-type semiconductor with (i) ϕm > ϕs and (ii) ϕs > ϕm . Plot the
band diagram in equilibrium, accumulation and strong and weak inversion in both the cases.
Now take a MOS-CAP with n-type semiconductor for (iii) ϕm > ϕs and (iv) ϕs > ϕs . Plot
the band diagram in equilibrium, accumulation, strong and weak inversion specifying the gate-
voltage (V g) polarity in each case.

6. For the MOSFET shown below, metal gate is replaced with the highly doped poly-Si gate,
whose Fermi level is 0.1 eV above the conduction band edge. Let W=L=5µm, TOX =300 Å and
µn =550 cm2 /V − s.

(a) Calculate VF B .

Figura 1: Device schematic of the MOSFET.

(b) Calculate threshold voltage VT .

(c) Plot the C − V curve of the device qualitatively.

(d) Draw the C − V curve if the gate material is changed from n+ to p+ (i.e Fermi level is 0.1
eV below the valence band edge) keeping the substrate material p . Also calculate the VT
and VF B .

(e) Draw the C − V curve if the substrate material is changed from n to p type with same
doping concentration keeping the gate as n+ . Also calculate the VT and VF B .

1
GE-108
MOS-CAP and MOSFET-Tutorial
IIT Ropar

(f) Draw the band diagram of the device at the flat-band condition.
Hint: Electron affinity of poly-si and si are same. Take band-gap of Si 1.1ev. and T=300K.

7. Explain using the band-diagram how the threshold voltage of a MOSFET shall change when a
body-source voltage VBS is applied to MOSFET. Also derive the expression of threshold voltage
in the presence of VBS . Assume the necessary parameters and state them in the your answer.

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