EECS 170LB

Section 17099
Lab # 6:Characterization of Bipolar Junction Transistors and
MOSFETs

Cooper Rosenberg (91568304)

Desmond Bolia (79616417)

Date of Experiment:
 I. Procedure

Lab 6 focused on examining particular characteristics of Bipolar Junction Transistors (BJTs) and

Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs). BJTs operate by injecting

charge carriers across two junctions and come in two types: NPN and PNP, with current

controlled by the base. In contrast, MOSFETs are voltage-controlled devices, with an insulated

gate that controls the flow of current between the source and drain that can be used as an

amplifier or switch. This experiment will explore the relationship between applied voltage and

the current through the transistor. When voltage is applied to a Bipolar Junction Transistor (BJT),

the current through it increases exponentially with the base-emitter voltage, as it is controlled by

the base current. In a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), the

current flow between the drain and source is controlled by the gate voltage, with current

increasing linearly and then saturating as gate voltage rises beyond the threshold level. A simple

circuit was built with two voltage sources, one constant and one which we adjusted, to measure

the current between the drain and source (MOSFET), or collector and base (BJT). These values

were collected and compared for a constant voltage input and adjusted voltage and plotted to

observe their behavior.

 II. Results and analysis

BJT:
Table 1: V2 = 5V

V1 VBE VR Ic
0 0.2 0 0
0.2 0.2 0 0
0.4 0.4 0 0
0.6 0.6 0.3 0.0003
0.8 0.6 2.57 0.00257
1 0.67 4.82 0.00482
1.2 0.675 4.86 0.00486
1.4 0.678 4.88 0.00488
1.6 0.68 4.89 0.00489
1.8 0.683 4.9 0.0049
2 .685 .491 0.000491
Table 2: V1 = 0.7

V2 VCE VR IC
0 1.8 mV 0 0
0.2 26.5 mV .2 0.0002
0.4 43.3 mV .4 0.0004
0.6 60.3 mV .55 0.00055
0.8 74.7 mV 0.71 0.00071
1 92.8 mV 0.9 0.0009
1.2 .112 V 1.1 0.0011
1.4 .185 V 1.2 0.0012
1.6 .364 V 1.23 0.00123
1.8 .578 V 1.24 0.00124
2 .807 V 1.25 0.00125
2.5 1.25 V 1.25 0.00125
3 1.66 V 1.26 0.00126
3.5 2.1 V 1.27 0.00127
4 2.689 1.28 .00128
4.5 3.19 1.29 .00129
5 3.7 1.3 .0013
Table 3: V1 = 0.8

V2 VCE VR IC
0 1.81 mV 0 0
0.2 17.5 mV 0.2 0.0002
0.4 28.9 mV 0.4 0.0004
0.6 38.9 mV 0.58 0.00058
0.8 46.7 mV 0.75 0.00075
1 55.4 mV 1 0.001
1.2 63.2 mV 1.2 0.0012
1.4 71 mV 1.33 0.00133
1.6 78.7 mV 1.5 0.0015
1.8 87.2 mV 1.7 0.0017
2 97.5 mV 1.9 0.0019
2.5 .134 V 2.37 0.00237
3 .394 V 2.6 0.0026
3.5 .864 V 2.6 0.0026
4 1.35 2.64 0.00264
4.5 1.82 2.66 0.00266
5 2.3 2.69 0.00269
MOSFETS:
Table 4: V2 = 5V

V1 VGS VR ID

0 0 0 0

0.2 0.2 0 0

0.4 0.4 0 0

0.6 0.6 0 0

0.8 0.8 0 0

1 1 0 0

1.2 1.2 0 0

1.4 1.4 0 0

1.6 1.6 0.001 0.000001

1.8 1.8 0.012 0.000012

2 2 0.14 0.00014

2.1 2.1 0.41 0.00041

2.2 2.2 1 0.001

2.3 2.3 2.2 0.0022

2.4 2.4 4.1 0.0041

2.5 2.5 4.78 0.00478

Table 5: V1 = 2V

V2 VDS VR ID

0 0.001 0.005 0.000005

0.5 0.013 0.118 0.000118

1 0.6 0.12 0.00012

1.5 1.1 0.127 0.000127

2 1.6 0.13 0.00013

2.5 2.1 0.13 0.00013

3 2.6 0.13 0.00013

3.5 3.1 0.136 0.000136

4 3.6 0.138 0.000138

4.5 4.1 0.14 0.00014

5 4.6 0.143 0.000143

Table 6: V1 = 2.5V
V2 VDS VR ID

0 0 0.092 0.000092

0.5 0.0067 0.47 0.00047

1 0.014 0.45 0.00045

1.5 0.021 1.4 0.0014

2 0.030 1.9 0.0019

2.5 0.040 2.3 0.0023

3 0.050 2.8 0.0028

3.5 0.060 3.3 0.0033

4 0.072 3.78 0.00378

4.5 0.085 4.2 0.0042

5 0.101 4.7 0.0047

III. Conclusion

Beginning with the BJT transistors, our results confirm the outcomes expected. Table and Chart !

reveal that the voltage applied to the transistor from V1 produces virtually no current until the

threshold voltage of 0.7V is reached. Upon reaching that value, we expect it to increase

exponentially, but given the small sample it appears linear. That said, we would expect this

sudden rise in current to occur after the threshold voltage is exceeded. In Table and Chart 2 we

observe a constant voltage for V1 and incrementally increase V2. In the plot we notice a linear

increase in current from 0.0V to approximately 0.5V, where it reaches the active region and

begins to normalize. Subsequently, we see in Table and Chart 3, that increasing V1 slightly

establishes a new active current of approximately .0026A. This is a higher Ic , with a linear

relationship in the saturation zone, given a higher VCE which we expect to see.

One must note that in our plots for the MOSFET, there was a formatting error and the

horizontal axis values are shown from 0 to 12. This is incorrect, and should reflect the VDS, GS

values in the above charts. With that noted, the MOSFET also followed the expected results. We

see in Table and Chart 4 an exponential relationship between ID and VGS . In Table and Chart 5 we

see the expected linear relationship between ID and VDS which then levels off in the saturation

zone and stays nearly constant with increases in voltage. Table 6 and Chart 6 likely reflect an

error in our execution of the experiment or recorded data. We would expect to see a graph similar

to that in Chart 5, but with an ID that is greater. This chart and this data reflects a linear

relationship, which was not expected and likely a result of our circuit set-up and execution.