Plasma Paper 3
Plasma Paper 3
1, 1999
In this overview, an attempt is made to assess the present and future research and
development in thermal plasma processing of materials restricted to (1) thermal
plasma coating technologies, (2) thermal plasma synthesis of fine powders, (3)
thermal plasma waste destruction, and (4) thermal plasma spheroidization and
densification. Since thermal plasma processing is, in general, governed by a large
number of parameters, implementation of controls becomes mandatory. The lack
of sufficient controls combined with economic drawbacks in some cases has been
the main obstacle for the growth of thermal plasma technology. Present R&D
efforts, however, address these problems.
1. INTRODUCTION
Thermal plasma technology has passed through a gradual transition
stage from primarily space-related activities in the sixties to a more and
more materials-oriented focus in the eighties and nineties. Space-related
needs provided a strong impetus for basic thermal plasma research and
developments as, for example, the development of plasma torches covering
power levels ranging from 1 kW to more than 10 MW. Research specifically
geared toward an understanding of plasma/particulate interaction and the
chemistry in thermal plasmas, however, did not commence until the early
eighties, although some successful applications were already in existence at
that time as, for example, in the area of arc welding, arc cutting, and in
some specific areas of plasma synthesis of fine powders. At this point it
should be emphasized that the successful development of arc circuit breakers
and of arc lamps contributed immensely to our basic understanding of
electric arcs.
1
This paper has been presented as a keynote lecture at the 13th International Symposium on
Plasma Chemistry, Beijing, PRC, August 18-22, 1997.
2
Department of Mechanical Engineering and ERC for Plasma-Aided Manufacturing, Univer-
sity of Minnesota, Minneapolis, Minnesota 55455.
1
0272-4324/99/0300-0001S16.00/0 C 1999 Plenum Publishing Corporation
2 Pfender
range from 2 to 6 kHz and a strong dependence of the arc behavior on the
plasma gas composition (Ar/H2, Ar/He, Ar/N2 mixtures).(8) These fluctu-
ations affect both torch performance (anode lifetime) and coating quality.
Attempts have been made to measure the motion of the arc root in the
anode nozzle by using magnetic probes(9) and also to calculate the anode
arc root position in the anode nozzle(10) using Steenbeck's minimum
principle.(11,12) Experimental results are in reasonable agreement with ana-
lytical predictions.
The previously discussed fluctuations of the plasma jet may lead, in
extreme cases, to the situations shown in Fig. 4 where the injected powder
particles miss a substantial fraction of the hot plasma jet.(13) This may lead
to a severe degradation of the quality of the coatings due to unmelts and
only partially melted powder particles in the coatings.
Attempts to model the plasma spray process require, as a first step, a
comprehensive model of the plasma jet. Unfortunately, modeling of plasma
jets faces several obstacles as indicated by experimental observations. Diag-
nostics of plasma jets using emission spectroscopy laser scattering (Rayleigh
and collective Thomson scattering), laser Doppler anemometry, enthalpy
probes, and mass spectrometry (for references, see Ref. 14) indicates that
Thermal Plasma Technology: Where Do We Stand and Where Are We Going? 5
Fig. 4. Schematic of the two-fluid model and boundaries for the computational domain.
6 Pfender
Since complete control of the plasma spray process is the ultimate goal
of all R&D efforts in this field, the establishment of comprehensive data-
bases and the selection of primary control parameters attracted particular
attention over the past years. This does not only apply to the APS, but also
to other plasma spray processes.
Recent developments are primarily concerned with:
(e) Substantial advances in the area of robotics have already been dem-
onstrated for both motion of the spray torch and the substrate during
the coating process.
Over the past years, applications of plasma spraying experienced a
slow, but consistent growth. As this technology further matures to the level
of complete, automated control, a more rapid growth of this technology
can be expected, because the lack of efficient controls has been the primary
obstacle for the growth of this field.
molten droplets from the wire tips, atomizes droplets, and drives them to
the substrate. The coating is formed by the impact, deformation, and rapid
solidification of individual molten droplets on the substrate, resulting in a
coating structure consisting of a series of overlapping lamellae. The
adhesion of the coating depends upon the interactions among individual
lamellae and between lamellae and the substrate. The bonding mechanisms
of arc-sprayed coatings are still poorly understood and process parameters
are still optimized by empirical methods. Excellent adhesion of coatings
is considered to be one of the most important prerequisites for industrial
application.(25,29)
If the interface adhesion is poor, coating detachment may occur
resulting in premature failure. The bond strength of a coating depends on
the extent of both physical and chemical interactions between the coating
and the substrate material and on the microstructure of the interfacial
region. Poor adhesion may be attributed to poor interfacial interlocking,
low degree of metallurgical bonding, and high internal stresses.
Adhesion strength depends to a large degree on particle velocities. In
conventional wire arc spraying, the velocities of particles are subject to cer-
tain limitations, so the coating produced with conventional primary gas
atomization has relatively high porosity and relatively low bond strength.
Secondary gas atomization spraying is a newly developed approach for
achieving more uniform particle size distributions, more focused spray pat-
terns, higher particle velocities, and improved coating properties.(30) As an
example, Fig. 6 shows the effect of secondary gas flow on the droplet sizes.
These SEM micrographs have been obtained from droplets sprayed onto a
sheet of ice for rapid solidification.
It has been shown that secondary gas-sprayed stainless steel coatings
on aluminum substrates reveal higher bond strength than those sprayed
10 Pfender
with only primary gas. The following three kinds of bonding mechanisms
are operative in spraying with secondary gas atomization: (1) physical bond-
ing, (2) mechanical bonding, (3) metallurgical bonding. The improved bond-
ing is believed to be due to the higher temperatures of the liquid metal
droplets at the instant of impact on the substrate. These higher temperatures
are the result of higher droplet velocities and of reduced entrainment of cold
air, leading to an interdiffusion layer between the substrate and the coating.
The presence of this interdiffusion layer as verified by elemental analysis of
the coating cross section is associated with the measurement of improved
bond strength.(30) Secondary gas flow can also reduce mixing of atomizing
gas with the surrounding air resulting in less oxide content and less chro-
mium loss (for stainless steel) in the coating.(31) For a further reduction of
the oxide content in the coating, carbon dioxide has been used as the atom-
izing gas, which also reduced the porosity in the coatings.(31)
One of the drawbacks of wire arc spraying is the generation of substan-
tial amounts of metal fumes which pose a human health hazard. Studies of
fume generation as a function of operational parameters for the related
process of arc welding have been reported in the literature.(32-34) The control
of fume generation at the source by modification of the process would lead
to a wider acceptance of wire arc spraying for industrial applications. In
recent experiments, using aluminum as the wire material, fume generation
has been quantified with computerized image processing. The results show
that metal evaporation at the wire tips is the primary source of fumes, and
oxidation seems to enhance metal evaporation. There is a pronounced asym-
metry of fume generation, because of the current concentration (high cur-
rent density) at the cathode.(35)
Besides dc plasma jets, other types of plasma reactors have also been
utilized which make use of high-frequency (RF), hybrid and microwave
plasmas. For increasing the available plasma volume, multiple torch
arrangements have been developed. A typical reactor with three torches
mounted in a way that the three jets coalesce to form an extended plasma
region (Fig. 8), and with reactant injection through a water-cooled probe
into the region where the three jets merge has been used for a parametric
study of the influence of the process parameters on the film
characteristics.(38,39) Typical power levels have been 36 kW total power, and
deposition rates of 40-60 /im/h are achieved at reactor pressures of 270 torr.
This reactor has also been used for the homoepitaxial growth of diamond
films with growth rates of 100-200 ^uM/h.(40,41)
As an example, Fig. 9 shows typical diamond films produced in this
reactor without (Fig. 9a) and with (Fig. 9b) secondary precursor injection.
Secondary precursor injection through a ring surrounding the plasma plume
(Fig. 8) provides more uniform precursor distribution over the substrate
surface, which has a pronounced effect on the surface morphology of the
deposited films. Figure 9b indicates an almost uniform film morphology
over the entire substrate diameter (30 mm).
Present research efforts dealing with this emerging technology are pri-
marily concerned with establishing the knowledge base, necessary for
further developments. Both experiments and modeling efforts consider the
chemistry in the boundary layer in front of a substrate in order to find the
Thermal Plasma Technology: Where Do We Stand and Where Are We Going? 13
Fig. 9. (a) Micrographs of diamond films deposited with the triple-torch plasma rector without
secondary precursors, (b) Micrographs of diamond films deposited with the triple-torch plasma
reactor with secondary precursors.
argon flow rate and keeping the other parameters the same, the boundary
layer thickness may be reduced and the effect of this reduction on the
boundary layer chemistry may be determined. Corresponding modeling
work shows that the importance of hydrocarbon and carbon species for
diamond shifts as the thickness of the boundary layer changes, as shown in
Fig. 11. Both the growth chemistry and the growth rate are strongly affected
by the thickness of the chemically reacting boundary layer in front of these
substrates.
For relatively thick boundary layers (=2 mm), the model predicts dia-
mond growth rates of =10jUm/h in accord with experimental data, with
the dominant growth species being methyl. For very thin boundary layers
(=0.1 mm) the model predicts diamond growth rates of several hundred jum/
h, with a transition to monatomic carbon as the dominant growth species
as shown in Fig. 11.(44,45)
Fig. 10. RF plasma reactor for TPCVD of diamond films with attached quadrupole mass
spectrometer.(42,43)
which diamond tends to adhere well (for example, Mo), or by using metallic
binder materials,(47,48) the adhesion problem may be avoided.
Although there is no clear-cut line between research and development,
this line is even more blurred in the case of TPCVD. Developments in this
area have been particularly visible in diamond film fabrication. Free-stand-
ing diamond wafers produced by TPCVD are already commercially avail-
able with diameters up to 10cm. Coating of complex three-dimensional
shapes is a difficult but not insurmountable problem and corresponding
efforts are already in progress.
As with most emerging technologies, economic considerations may be
the overriding concern for new developments. This has been the case, for
example, in the field of diamond film developments. The initially predicted
growth of the market in this field did not materialize.
As in plasma and wire arc spraying, complete control of the TPCVD
process is the ultimate goal of R&D efforts.
Fig. 12. Schematic of the counterflow plasma reactor for injection of liquid precursors.
many years by Ti oxide in the United Kingdom using MW-sized arc gas
heaters.
With the advance of liquid-injection plasma synthesis within the last
eight years, ternary, quaternary, and higher component oxide solid solutions
including spinels of aluminates, ferrites, and chromites,(51-54) and the high-
temperature oxide superconductors,(51,55-58) have been synthesized in both
dc and RF plasmas. Figure 13 shows an example of a RF plasma reactor
which has been used for the synthesis of superconducting powders.(55)
Besides these more "exotic" oxide compounds, there has been little activity
in thermal-plasma synthesis of oxides.
Thermal Plasma Technology: Where Do We Stand and Where Are We Going? 19
Fig. 13. Schematic of a RF plasma reactor for plasma synthesis of fine powders.
Fig. 14. Schematic of plasma reactor for the synthesis on nanometer size particles.(60)
reactants. These results show that the particles produced in the process have
a narrow size distribution peaking at a few nanometers. Both SiC and Si
particles have been produced with median diameters of 8.5 nm and with
90% of the particles having diameters of less than 16 nm.
larger holding tank. From here they are vented to a scrubber. The West-
inghouse torch consists of two cylindrical water-cooled electrodes having
the same diameter, and the plasma gas (air) is injected through a narrow
gap between them. A magnetic field rotates the arc-electrode attachment,
reducing electrode wear. The liquid waste materials are injected into the jet
immediately downstream of the torch. Only liquid waste materials are
injected into the jet immediately downstream of the torch. Only liquid
wastes can be destroyed. A computer program has been developed based
on equilibrium chemistry which determines the optimal set of operating par-
ameters for any specific waste composition such as torch power, torch gas
flow rate, liquid waste flow rate, and possible need for additional reactants
to make the process chemistry more favorable. The process has been
operating with various wastes, and for PCB's being destroyed at a rate of
up to 12 liters/min with a torch power of 850 kW, destruction efficiencies
of eight-nines have been attained, with particulate and acid emission well
under the EPA guidelines.(63) The entire processing unit is self-contained
and mounted on a trailer and can thus be moved easily from one waste site
to the other. Hook-ups are required for power, water, and for the waste
water. The quality of the gaseous emissions and of the waste water is con-
stantly monitored.
Thermal Plasma Technology: Where Do We Stand and Where Are We Going? 23
rotation of the tub is reduced and the molten material is allowed to flow
through the center hole into a crucible where it forms a nonleachable slag.
The off-gas has to be treated with a scrubber, and additional treatment is
required for reduction of NO. Heat in the off-gas is recovered before it
enters the scrubber. The off-gas composition is continuously monitored.
Destruction efficiencies of better than 99.9968 have been achieved for
organic contaminants, and the slag has been demonstrated to be nonleach-
able with respect to heavy metals.
The Retech plasma centrifugal furnace is also the heart of a system
which has been developed at the DOE site at Butte, Montana, for the
destruction and vitrification of mixed wastes (nuclear and hazardous
organics).(69,70) The reactor is a slightly smaller version of the reactor used
in the installation in Switzerland, with a tub width of 1.8m and operating
at 600 kW.
The independent control over heat input and chemistry in a plasma
chemical reactor offers the opportunity of tailoring processes such that valu-
able co-products can be produced. Although no such process is commercial
yet, there are several in the laboratory or in advanced development stages.
An example is the generation of industrial diamonds during the destruction
of hazardous liquid waste materials, pursued at the University of
Minnesota.(71,72) A plasma reactor similar to that shown in Fig. 12 has been
used for these experiments. Destruction and removal efficiencies of over
99.99% have been achieved with benzene and CCl4 while simultaneously
diamonds were grown at linear growth rates of more than 0.1 mm/h. As an
example, Fig. 17 shows a micrograph of diamond synthesized from PCB's.
Fig. 17. Micrograph of diamond film deposited on Mo substrate using PCB's as precursor.
Fig. 18. Micrograph of original (left side) and plasma densifled (right side) powders. From top
to bottom: A12O3, Mo, W.
plasma are shown in Fig. 18 for alumina, molybdenum, and tungsten pow-
ders. These have mostly a mean particle diameter in the range of 45-76 jUm.
Plasma sintering refers to the process of bonding particles and
densification of materials by applying heat from a plasma. Plasma sintering
of refractory materials, mainly ceramics, is a relatively new technology. At
the end of the 1960s Bennett et al.,(73,74) sintered some oxides in microwave
plasmas at 2450 MHz and gas pressures between 100-7000 Pa. They found
that alumina and some other ceramic materials can be sintered successfully
and rapidly in plasmas generated by microwave excitation. They observed
significantly finer grain sizes and greater densification rates than in conven-
tionally sintered materials at the same temperature. They also hypothesized
Thermal Plasma Technology: Where Do We Stand and Where Are We Going? 27
6. CONCLUSIONS
The following conclusions are restricted to the areas which have been
covered by this overview, i.e., (1) thermal plasma coating technologies, (2)
thermal plasma synthesis of fine powders, (3) thermal plasma waste destruc-
tion, and (4) thermal plasma densification and spheroidization.
In general, the growth of thermal plasma technologies has been ham-
pered by the lack of controls. It is felt that synergistics between basic
research and development will be crucial for the implementation of controls.
This implementation will have a strong impact on the growth of thermal
plasma coating technologies.
Developments in plasma synthesis will also benefit from better controls,
and it is anticipated that the focus of research in this area will be increas-
ingly toward nanometer-structured materials.
Thermal plasma waste destruction is facing stiff competition from less
costly processes. An economic assessment, however, must include the entire
system, not only the plasma part. The possibility for interesting co-products
and the potential for integration of the waste destruction system in the over-
all manufacturing process may improve the economics.
28 Pfender
ACKNOWLEDGMENTS
A number of colleagues and present and former graduate students con-
tributed to the material presented in this overview. Their contributions, as
well as the support from NSF and DOE, are gratefully acknowledged.
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