Scribd
Upload
20 views

Assignment 4 - Semiconductor Devices

Uploaded by

ikhodiyev
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
20 views

Assignment 4 - Semiconductor Devices

Uploaded by

ikhodiyev
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

Name:

Assignment 4
Online submission due is by 12:20 pm, Oct. 29 (Tuesday)

Please complete the following problems

(20 pts) Problem 5.1 (ni = 1.5 x 1010 cm-3, ε = 13 x 8.85 x 10-14 F/cm)
Answer units in eV and cm

An abrupt Si junction (area = 10-4 cm2) has the following parameters:


n side p side
Nd = 1017 cm-3 Na = 5  1017 cm-3
Draw and label the band diagram, and calculate the difference between the Fermi
level and the intrinsic Fermi level on both sides. Calculate the built-in potential at
the junction in equilibrium and the depletion width. What is the total number of
exposed acceptors in the depletion region?

(10 pts) Problem 5.2


Answer units in A/cm2
In a p+n junction, the n side has a donor concentration of 1016 cm-3. If ni = 1010 cm-3,
the relative dielectric constant r = 11, Dn = 50 cm2/s, Dp = 20 cm2/s, and the electron
and hole minority carriers have lifetimes  = 50 ns and 100 ns, respectively, and a
forward bias of 0.6 V, calculate the hole diffusion current density 2 m from the
depletion edge on the n side. If we double the p+ doping, what effect will it have on
this hole diffusion current?

(10 pts) Problem 5.3 (ni = 1.5 x 1010 cm-3)


A Si p+n junction has a donor doping of 5  1016 cm-3 on the n side and a cross-
sectional area of 2  10-3 cm2. If p = 1 s and Dp = 10 cm2/s, calculate the current
with a forward bias of 0.4 V at 300 K.
Name:

(10 pts) Problem 5.4 (ε = 11.8 x 8.85 x 10-14 F/cm, V0 = 0.834 V)


Hint: for part b, check out the chart on 6 PN Junction Part 2 file slide 15.
Answer units in F and micrometers (µm)

(a) A Si p+n junction 4  10-2 cm2 in area has Nd = 2  1015 cm-3 doping on the n side.
Calculate the junction capacitance with a reverse bias of 10V.
(b) An abrupt p+n junction is formed in Si with a donor doping of Nd = 1016 cm-3.
What is the depletion region thickness W just prior to avalanche breakdown?

(10 pts) Problem 5.5 (Reverse bias case ONLY, ni = 1.5 x 1010 cm-3)
A Si n+p junction has an area of 5  6 m. Calculate the total junction capacitance
associated with this junction at an applied reverse bias of 2V. Assume that the n+
region is doped 1019 cm-3 and the p doping is 1  1016 cm-3.

(20 pts) Problem 5.6


(From Fig. 3-23. µ n = 700 cm2 V-1 s-1, µ p = 250 cm2 V-1 s-1), ni = 1.5 x 1010 cm-3
Start with calculating total current “I” (should be constant across pn junction)
Next, calculate enough points for Ip and In to draw a plot similar to 5-17 with numerical
accuracy. Remember, total current is the sum of hole current and electron current I = Ip + In.
Make sure to include actual numeric values in the x and y axes.

Assume that an abrupt Si p-n junction with area 10-4 cm2 has Na = 1017cm-3 on the p
side and Nd = 1017cm-3 on the n side. The diode has a forward bias of 0.7 V. Using
mobility values from Fig. 3-23 and assuming that n = p = 2 s, plot Ip and In vs.
distance on a diagram such as Fig. 5-17, including both sides of the junction. Neglect
recombination within W.
Name:

You might also like