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Tut 2

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36 views3 pages

Tut 2

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5jr9n4xjvh
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Since Nc>Nv, Ei is towards

Ec
1. A new semiconductor has 𝑁𝑐 = 1019 , 𝑁𝑣 = 5 x 1018 , and Eg = 2 eV. If it is doped with
1017 donors (fully ionized), calculate the electron, hole, and intrinsic carrier
concentrations at 627°C. Sketch the simplified band diagram, showing the position of
𝐸𝐹 .
2. Show that the minimum conductivity of a semiconductor sample occurs when
µ𝑝
𝑛𝑜 = 𝑛𝑖 √
µ𝑛
What is the expression for the minimum conductivity 𝛔𝑚𝑖𝑛 ?
Calculate 𝛔𝑚𝑖𝑛 for Si at 300K and compare with intrinsic conductivity.

3. Assume that a conduction electron in Si (µ𝑛 = 1350 𝑐𝑚2𝑉−1𝑠−1) has a thermal energy
of kT, related to its mean thermal velocity by 𝐸𝑡ℎ = (𝑚𝑂 𝑣𝑡2ℎ )/2. This electron is placed
in an electric field of 100 V/cm. Show that the drift velocity of the electron in this case
is small compared with its thermal velocity. Repeat for a field of 104 V/cm, using the
same value of µ𝑛 . Comment on the actual mobility effects at this higher value of the
field.
4. For a Si conductor of length 5 µ𝑚, doped n-type at 1015 𝑐𝑚−3, calculate the current
density for an applied voltage of 2.5 V across its length. How about for a voltage of
2500 V? The electron and hole mobilities are 1500 𝑐𝑚2𝑉−1𝑠−1 and 500 𝑐𝑚2𝑉−1𝑠−1,
respectively, in the ohmic region for electric fields below 104 V/cm. For higher fields,
electrons and holes have a saturation velocity of 107cm/s.
5. These questions refer to the band structures of Si and GaAs shown in Fig 1.
(a) Which material appears to have the lowest (conduction band) electron effective
mass, Si or GaAs?
(b) Which of these would you expect to produce photons (light) more efficiently
through electron-hole recombination?
(c) Consistent with your answer to part (b) and making use of Table1, what would you
expect the energy of the emitted photons to be? What would be their wavelength in
µ𝑚? Would these be visible, infrared, or ultraviolet?
(d) How many equivalent conduction band minima do we have for Si? GaAs?

Table 1

Eg(e
V)
µe µh 𝑚𝑛∗ 𝑚𝑝∗ a( ε 𝑟
Densi
ty
Melti
ng
𝑐𝑚2 𝑉 −1 𝑠 −1𝑐𝑚2 𝑉 −1 𝑠 −1 𝑚𝑜 𝑚𝑜 𝐴0 )
(g/ point(
𝑐𝑚3 °C
Si (i/D 1.11 1350 480 0.98,0. 0.16, 5.43 11. 2.33 1415
) 19 0.49 8

Ga (d/ 1.43 8500 400 0.67 0.074, 5.65 13. 5.31 1238
As Z) 0.5 2

Note: The first column lists the semiconductor, the second indicates band structure type and
crystal structure. Definitions of symbols: i is indirect; d is direct, Z is zinc blende, D is diamond.
Figure 1-Conduction and valence bands in Si and GaAs along [111] and [100]

6. Refer to Fig1, which shows the E vs. k dispersion relations for gallium arsenide (GaAs)
and for silicon (Si) along the [111] and [100] directions, showing both valence and
conduction bands.
(a) Neglecting differences in electron scattering rates in the two materials, would you
expect Si or GaAs to have the greatest electron mobility µ𝑛 ?
(b) If a constant force were applied in the [100] direction for a short period of time on
an electron initially located at the conduction band minimum of each semiconductor
and if scattering were neglected, would the magnitude of change in k in Si be greater,
equal to, or smaller than the magnitude of the change in k in GaAs for the same force
F?greater/equal/smaller

7. The equilibrium band diagram for a doped direct gap semiconductor is shown in
Figure2. Is it n-type, p-type, or unknown? Circle one below.
n-type/p-type/not enough information provided.

Figure 2

Based on the band diagram opposite (𝐸𝑖 is in the middle of the gap), would you expect
that the conduction band density-of-states effective mass is greater than, equal to, or
smaller than the valence band effective mass?
Circle one: Greater than/equal/smaller than
What, if any, of the following conditions by themselves could lead to the above band
diagram? Circle each correct answer.
(a) very high temperature
(b) very high acceptor doping
(c) very low acceptor doping

8. A hypothetical semiconductor has an intrinsic carrier concentration of 1.0x 1010 /𝑐𝑚3at


300 K, it has conduction and valence band effective densities of states 𝑁𝑐 and 𝑁𝑣 , both
equal to 1019 /𝑐𝑚3 .
(a) What is the band gap 𝐸𝑔 ?
(b) If the semiconductor is doped with 𝑁𝑑 = 1 x 1016 donors cm−3 , what are the
equilibrium electron and hole concentrations at 300K?
(c) If the same piece of semiconductor, already having 𝑁𝑑 = 1 x 1016 donors cm−3 , is
also doped with 𝑁𝑎 = 2 x 1016 acceptors cm−3 , what are the new equilibrium electron
and hole concentrations at 300 K?
(d) Consistent with your answer to part (c), what is the Fermi level position with respect
to the intrinsic Fermi level, 𝐸𝐹 − 𝐸𝑖 ?

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