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T9 SBD Moscap

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10 views8 pages

T9 SBD Moscap

Uploaded by

Tarun Pratap Singh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Electronic Devices

Tutorial -9
Schottky Barrier Diodes and MOSCAPs

BITS Pilani, K K Birla Goa Campus


Problem 1
The energy band diagram for a MOSCAP is as shown below. The applied gate voltage causes a band
bending such that 𝐸𝐹𝑆 = 𝐸𝑖 at the Si-SiO2 interface. Answer the following:
(a) Sketch electrostatic potential inside the semiconductor.
(b) Do equilibrium conditions prevail inside the semiconductor? Explain.
(c) What is the electron concentration at the Si-SiO2 interface?
0.49 eV
(d) Roughly sketch n versus position inside the semiconductor
(e) 𝑁𝐷 = ?
(f) 𝜙𝑆 = ?
(g) Applied voltage (VG) = ?

BITS Pilani, K K Birla Goa Campus


Problem 2
(a)Calculate the maximum space charge width and the maximum space charge
density in a MOS capacitor with a p-type silicon substrate at T = 300 K for doping
concentrations of Na = 7 x 1015 cm-3. (b) Repeat part (a) for T = 350 K.
(𝑁𝐶 = 2.8 × 1019 , 𝑁𝑉 = 1.04 × 1019 at room temperature)

BITS Pilani, K K Birla Goa Campus


Problem 3
A Schottky diode and a pn junction diode have cross-sectional areas of A = 7 x 10-4
cm2. The reverse-saturation current densities at T = 300 K of the Schottky diode and
pn junction are 4 x 10-8 A/cm2 and 3 x 10-12 A/cm2, respectively. A forward-bias current
of 0.8 mA is required in each diode. (a) Determine the forward-bias voltage required
across each diode. (b) If the voltage from part (a) is maintained across each diode,
determine the current in each diode if the temperature is increased to 400 K. (Take into
account the temperature dependence of the reverse saturation currents. Assume Eg =
1.12 eV for the pn junction diode and 𝜙𝐵 = 0.82 V for the Schottky diode.)

BITS Pilani, K K Birla Goa Campus


Problem 4
Gold is deposited on n-type silicon forming an ideal rectifying junction. The doping
concentration is 𝑁𝐷 = 1016 𝑐𝑚−3 . Assume T = 300 K. Determine the theoretical values
of (a)𝜙𝐵 , (b) 𝑉𝑏𝑖 , and (c) Depletion width and 𝐸𝑚𝑎𝑥 at a reverse bias of 1 V.
(Work function of Gold = 5.1 eV, Electron affinity of silicon = 4.01 eV, 𝑁𝐶 (300 K) =
2.8 × 1019 cm-3 , 𝜖𝑠𝑖 = 11.7)

BITS Pilani, K K Birla Goa Campus


Problem 5
A pn junction diode and a Schottky diode each have cross-sectional areas of A = 8 x
10-4 cm2. The reverse saturation current densities at T = 300 K for the p-n junction
diode and Schottky diode are 8 x 10-13 A/cm2 and 6 x 10-9 A/cm2, respectively.
Determine the required forward-bias voltage in each diode to yield currents of 150 𝜇A.

BITS Pilani, K K Birla Goa Campus


Problem 6
The dc charge distributions of four ideal MOS capacitors are shown in the figure. For
each case: (a) Is the semiconductor n or p type? (b) Is the device biased in the
accumulation, depletion, or inversion mode? (c) Draw the energy band diagram in the
semiconductor region.

BITS Pilani, K K Birla Goa Campus


Problem 7
(a) The two diodes described in previous problem are connected in series and
are driven by a constant current source of 0.80 mA. Determine (i) the current in
each diode and (ii) the voltage across each diode.

BITS Pilani, K K Birla Goa Campus

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