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Doping

Doping crystals explanation

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guykhair
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12 views

Doping

Doping crystals explanation

Uploaded by

guykhair
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Doping is the process of intentionally introducing impurities into a semiconductor material

to modify its electrical properties. The primary purpose of doping is to increase the
conductivity of a semiconductor by altering its charge carrier concentration—either adding
electrons or creating "holes" (vacancies where electrons could be). This is a fundamental
concept in semiconductor physics and is key to the operation of electronic devices like
transistors, diodes, and solar cells.

1. What is Doping?

In pure (or intrinsic) semiconductors, such as silicon or germanium, the number of charge
carriers (electrons in the conduction band and holes in the valence band) is relatively low,
making the material a poor conductor of electricity. Doping enhances the material's
conductivity by introducing impurities (dopants) into the semiconductor crystal structure.
The dopants typically have a different number of valence electrons compared to the host
semiconductor atoms, which creates extra charge carriers.

2. Types of Doping

Doping can be categorized based on the type of dopant material used. The two main types
of doping are:

a. N-type Doping (Negative Type)

In n-type doping, dopants are introduced that have more valence electrons than the host
semiconductor atoms. For example, silicon (Si) atoms have four valence electrons, but a
dopant like phosphorus (P), which has five valence electrons, is commonly used.

• How it works: When a phosphorus atom replaces a silicon atom in the crystal
lattice, four of its five valence electrons bond with the neighboring silicon atoms.
The fifth electron becomes free and is able to move in the conduction band,
increasing the material's conductivity.

• Effect: The extra free electron is the majority charge carrier in an n-type
semiconductor, which is why it is called "negative type." The semiconductor is now
enriched with electrons (negative charge carriers).

• Example: Doping silicon with phosphorus creates n-type silicon, where the
majority carriers are electrons.

b. P-type Doping (Positive Type)

In p-type doping, dopants with fewer valence electrons than the host semiconductor
atoms are used. For example, a dopant like boron (B), which has three valence electrons,
is commonly used for p-type doping in silicon.
• How it works: When a boron atom replaces a silicon atom, it forms three bonds
with neighboring silicon atoms, but there is one bond left incomplete because of the
missing fourth electron. This "missing" electron creates a hole (a vacancy where an
electron could be), which behaves as a positive charge carrier.

• Effect: The hole acts as a majority charge carrier in p-type material, making it
"positive type."

• Example: Doping silicon with boron creates p-type silicon, where the majority
carriers are holes.

3. Doping and the Formation of P-N Junctions

One of the most important applications of doping is the creation of a p-n junction, which
forms the basis for many semiconductor devices such as diodes, transistors, and solar
cells.

• P-N Junction: When n-type and p-type materials are placed together, they form a
p-n junction. At this junction, electrons from the n-type region diffuse into the p-
type region, and holes from the p-type region diffuse into the n-type region. This
creates a region around the junction where no free charge carriers exist, known as
the depletion region.

• Electric Field: The movement of electrons and holes results in an electric field that
prevents further diffusion of charge carriers. This property is used to control the flow
of current in diodes and transistors.

• Forward and Reverse Bias: When an external voltage is applied, the p-n junction
allows current to flow in one direction (forward bias) and blocks it in the opposite
direction (reverse bias), which is the principle behind diodes.

4. How Doping Affects Electrical Properties

Doping has a significant impact on the electrical properties of semiconductors. By


adjusting the concentration and type of dopants, the following properties can be tailored:

• Carrier Concentration: Doping increases the number of free charge carriers in a


semiconductor. In n-type materials, electrons are the majority carriers, and in p-
type materials, holes are the majority carriers.

• Conductivity: Doped semiconductors have a much higher electrical conductivity


compared to intrinsic (pure) semiconductors. The conductivity depends on both the
concentration of dopants and the temperature.
• Electrical Neutrality: Despite introducing dopants, the semiconductor as a whole
remains electrically neutral. In n-type materials, for instance, the negative charge of
the free electrons is balanced by the positive charge of the fixed ions in the dopant
atoms. The same is true for p-type materials, where the absence of electrons (holes)
is balanced by the negative charge of the fixed dopant ions.

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