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Nmosfet Process

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3ddevindu
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11 views

Nmosfet Process

Uploaded by

3ddevindu
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as TXT, PDF, TXT or read online on Scribd
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# 2D nMOSFET (0.

18um technology)
# ------------------------------

# Declare initial grid (half structure)


# -------------------------------------

line x location= 0.0 spacing= 1.0<nm> tag= SiTop


line x location= 50.0<nm> spacing= 10.0<nm>
line x location= 0.5<um> spacing= 50.0<nm>
line x location= 2.0<um> spacing= 0.2<um>
line x location= 4.0<um> spacing= 0.4<um>
line x location= 10.0<um> spacing= 2.0<um> tag= SiBottom

line y location= 0.0 spacing= 50.0<nm> tag= Mid


line y location= 0.40<um> spacing=50.0<nm> tag= Right

# Silicon substrate definition


# ----------------------------

region Silicon xlo= SiTop xhi= SiBottom ylo= Mid yhi= Right

# Initialize the simulation


# -------------------------

init concentration= 1.0e+15<cm-3> field= Phosphorus

AdvancedCalibration

# p-well, anti-punchthrough & Vt adjustment implants


# --------------------------------------------------

implant Boron dose= 2.0e13<cm-2> energy= 200<keV> tilt= 0 rotation= 0


implant Boron dose= 1.0e13<cm-2> energy= 80<keV> tilt= 0 rotation= 0
implant Boron dose= 2.0e12<cm-2> energy= 25<keV> tilt= 0 rotation= 0

# p-well: RTA of channel implants


# -------------------------------

diffuse temperature= 1050<C> time= 10.0<s>

# Saving structure
# ----------------

struct tdr= n@node@_NMOS1 ; # p-Well

# Global Mesh settings for automatic meshing in newly generated layers


# --------------------------------------------------------------------

grid set.min.normal.size= 1<nm> set.normal.growth.ratio.2d= 1.5


mgoals accuracy= 1e-5

pdbSet Oxide Grid perp.add.dist 1e-7


pdbSet Grid NativeLayerThickness 1e-7

# Gate oxidation
# --------------

diffuse temperature= 850<C> time= 10.0<min> O2


select z=1
layers

struct tdr= n@node@_NMOS2 ; # GateOx

# Poly gate deposition


# --------------------

deposit material= {PolySilicon} type= anisotropic time= 1 rate= {0.18}

# Poly gate pattern/etch


# ----------------------

mask name= gate_mask left=-1 right= 90<nm>


etch material= {PolySilicon} type= anisotropic time= 1 rate= {0.2} \
mask= gate_mask
etch material= {Oxide} type= anisotropic time= 1 rate= {0.1}
struct tdr= n@node@_NMOS3 ; # PolyGate

# Poly reoxidation
# ----------------

diffuse temperature= 900<C> time= 10.0<min> O2


struct tdr= n@node@_NMOS4 ; # Poly Reox

# LDD implantation
# ----------------

refinebox Silicon min= {0.0 0.05} max= {0.1 0.12} xrefine= {0.01 0.01 0.01} \
yrefine= {0.01 0.01 0.01} add
grid remesh

implant Arsenic dose= 4e14<cm-2> energy= 10<keV> tilt= 0 rotation= 0


diffuse temperature= 1050<C> time= 0.1<s> ; # Quick activation
struct tdr= n@node@_NMOS5 ; # LDD Implant

# Halo implantation: Quad HALO implants


# -------------------------------------

implant Boron dose= 0.25e13<cm-2> energy= 20<keV> tilt= 30<degree> \


rotation= 0
implant Boron dose= 0.25e13<cm-2> energy= 20<keV> tilt= 30<degree> \
rotation= 90<degree>
implant Boron dose= 0.25e13<cm-2> energy= 20<keV> tilt= 30<degree> \
rotation= 180<degree>
implant Boron dose= 0.25e13<cm-2> energy= 20<keV> tilt= 30<degree> \
rotation= 270<degree>

# RTA of LDD/HALO implants


# ------------------------

diffuse temperature= 1050<C> time= 5.0<s>


struct tdr= n@node@_NMOS6 ; # Halo RTA

# Nitride spacer
# --------------

deposit material= {Nitride} type= isotropic time= 1 rate= {0.06}


etch material= {Nitride} type= anisotropic time=1 rate= {0.084} \
isotropic.overetch= 0.01
etch material= {Oxide} type= anisotropic time= 1 rate= {0.01}
struct tdr= n@node@_NMOS7 ; # Spacer

# N+ implantation
# ---------------

refinebox Silicon min= {0.04 0.12} max= {0.18 0.4} xrefine= {0.01 0.01 0.01} \
yrefine= {0.05 0.05 0.05} add
grid remesh
implant Arsenic dose= 5e15<cm-2> energy= 40<keV> \
tilt= 7<degree> rotation= -90<degree>

# N+ implantation & final RTA


# ---------------------------

diffuse temperature= 1050<C> time= 10.0<s>


struct tdr= n@node@_NMOS8 ; # S/D implants

# Contacts
# --------

deposit material= {Aluminum} type= isotropic time= 1 rate= {0.03}

mask name= contacts_mask left= 0.2<um> right= 1.0<um>


etch material= {Aluminum} type= anisotropic time= 1 rate= {0.25} \
mask= contacts_mask
etch material= {Aluminum} type= isotropic time= 1 rate= {0.02} \
mask= contacts_mask

# Reflect
# -------

transform reflect left


struct tdr= n@node@_NMOS ; # Final

# save final structure:


# - 1D cross sections

SetPlxList {BTotal NetActive}


WritePlx n@node@_NMOS_channel.plx y=0.0 Silicon

SetPlxList {AsTotal BTotal NetActive}


WritePlx n@node@_NMOS_ldd.plx y=0.1 Silicon

SetPlxList {AsTotal BTotal NetActive}


WritePlx n@node@_NMOS_sd.plx y=0.39 Silicon

exit

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