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65 views

SD PPT

Uploaded by

nice40025291
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GEETHANJALI COLLEGE OF

ENGINEERING
ENERGY GAP OF A SEMI CONDUCTOR
SEMICONDUCTOR DEVICES LAB
PRESENTATION
GROUP MEMBERS
hemalatha (23R11A6726)
vishnu vardhan (23R11A6727)
ENERGY GAP
The band gap energy is the energy difference between the highest occupied
energy level(valence band) and the lowest unoccupied energy level(conduction
band). it dictates the materials ability to conduct electricity and interact with
light.
For different materials they are different energy gaps
❖For metals –no energy gap (because valence band
and conduction band overlap)
❖For semiconductors –energy gap less than 3ev
❖For insulators-energy gap is greater than3-eV
EXPERIMENT:

Aim: To determine the energy gap of a given


semiconductor.
Apparatus: Semiconductor diode, micro ammeter,
thermometer, copper vessel, regulated DC power
supply, heater and Bakelite lid.
Formula :

Where 𝐸𝑔 = energy gap of semiconductor, 𝑘 =


Eg=2*2.303*slope*k/1.6*10^-19 ev

Boltzmann’s constant= 1.38 x 10-23J/K Slope =

dx from graph between 1 𝑇 and 𝑙𝑜𝑔10𝐼𝑠 , and 1


dy

Joule = 1.6 x 10-19eV


PROCEDURE :Make the required connections as shown in the circuit
diagram. Pour some oil in the copper vessel, and fix the Bakelite lid on
the copper vessel. Insert thermometer into the vessel and apply a
constant voltage (1.5V) to the given semiconductor. Increase the
temperature of the oil to 80℃ by switching on the heater. Switch off
the heater then the oil starts cooling. Current is measured for every
5℃ fall of temperature from 80℃ to 50℃, and the readings are

Graph: A graph is plotted by taking 𝑙𝑜𝑔10𝐼𝑠on Y-axis and 1 𝑇 on


tabulated. Applied constant voltage (V) = 1.5 V.

Xaxis. A straight line is obtained as shown, whose slope is


determined.
Observations:
Applied constant voltage (V) = 1.5 V.
CALCULATIONS:

𝐸𝑔 = 1.1 𝑒𝑉 for silicon mat𝑒𝑟𝑖𝑎𝑙


𝐸𝑔 = 0.67eV for germanium material
𝐸𝑔 = 1.43eV for GaAs material
Conculsion : we can calculate energy gape of
semiconductors .they range between 0.5eV -
3.0eV
▪The band gap is called "direct" if the crystal
DIRECT BAND GAP

momentum of electrons and holes is the same in


both the conduction band and the valence band an

▪Examples of direct bandgap materials include


electron can directly emit a photon.

hydrogenated amorphous silicon and some III-V

▪direct band gap semiconductors are used to make


materials such as InAs and GaAs.

optical devices such as LEDs and semiconductor


lasers
INDIRECT BAND GAP
The band gap is called indirect band gap where crystal momentum of electrons and
holes is the
different in both the conduction band and the valence
band. In an indirect gap, a photon cannot be emitted
because the electron must pass through an
intermediate state and transfer momentum to the

▪materials include crystalline silicon and Ge.


crystal lattice.

Some IIIV materials are indirect bandgap as well, for example

▪Indirect bandgap layers are used as optical


AlSb(aluminimum antimonide).

confinment to shape up refractive index of laser


devices
DIRECT BAND GAP INDIRECT BAND GAP
APPLICATIONS:
The higher energy gap gives devices the ability to operate at
higher temperatures. For some applications, wide-bandgap
materials allow devices to switch larger voltages. The wide
bandgap also brings the electronic transition energy into the
range of the energy of visible light, and hence light-emitting
devices such as light emitting diodes (LEDs) and semiconductor
laser can be made that emit in the visible light , or even produce
ultraviolet radiation. Wide-bandgap semiconductors can also be
used in RF signal processing. Silicon-based power transistors are
reaching limits of operating frequency, breakdown voltage,
and power density. Wide-bandgap materials can be used in high temperature
and power switching applications

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