Chapter 1 Solutions

Prob. 1.1
Which semiconductor in Table 1-1 has the largest Eg? the smallest? What is the
corresponding λ? How is the column III component related to Eg?

largest Eg : ZnS, 3.6 eV

1.24
λ= = 0.344µm
3.6

smallest Eg : InSb, 0.18 eV

1.24
λ= = 6.89µm
0.18

. We or
m W ina g

b)
ed e n
Al compounds Eg > corresponding Ga compounds Eg > the corresponding In

in
no W iss ea s

itt id tio
is e D t w
t p or em ch
compounds Eg d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es

Prob. 1.2
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un

For a bcc lattice of identical atoms with a lattice constant of 5 Å, calculate the maximum
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec

packing fraction and the radius of the atoms treated as hard spheres with the nearest
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk

neighbors touching.
th d wo
an his

e
T

Each corner atom in a cubic unit cell is shared with seven neighboring cells; thus, each

unit cell contains one-eighth of a sphere at each of the eight corners for a total of one

atom. The bcc cell contains one atom in the center of the cube. Thus, we have

1
Nearest atoms are at a separation × 52 + 52 + 52 = 4.330 Å
2

1
Radius of each atom = × 4.330 Å = 2.165 Å
2

4 3
Volume of each atom = π ( 2.165) = 42.5 Å3
3

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 1
Number of atoms per cube = 1 + 8 × = 2
8

42.5 × 2
Packing fraction = = 68%.
(5)3
Therefore, if the atoms in a bcc lattice are packed as densely as possible, with no

distance between the outer edges of nearest neighbors, 68% of the volume is filled. This

is a relatively high percentage compared with some other lattice structures.

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T

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 Prob. 1.3
Label planes.

(6 4 3) (2 1 2)

Layout
x
1 : (1 1 1)
x
Layout 2: (2 3 3)
_x y z_ _x y z_
2 3 4 2 4 2
1/2 1/3 1/4 1/2 1/4 1/2
6 4 3 2 1 2

Prob.1.4

. We or
m W ina g

b)
ed e n
in
no W iss ea s
Sketch a body centered cubic unit cell with a monoatomic basis. If the atomic density is 1.6x1022

itt id tio
is e D t w
t p or em ch
d th g. in t la
cm-3, calculate the lattice constant. What is the atomic density per unit area on the (110) plane?
an on in rs h
k g rn to rig
or in a uc y

What is the radius of each atom? What are interstitials and vacancies?
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S

1
te is ss th ite

# of atoms in unit cell a 3 = 8 × + 1 = 2

in f th se for Un
gr w in e

8
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec

2
de f a rse de ot

=1.6×1022cm-3
s
ill o u vi pr

3
a
w le co ro is
sa eir is p rk
th d wo
an his

1
e

⎛ 1 ⎞ 3
T

a = ⎜ ⎟ ×10−7 cm = 5≈
⎝ 8 ⎠

( )
Area of (110) plane = a 2 a = 2 ( 25 ) ≈ 2

1 2
# of atoms = 1+4× = 2 ⇒ Density = Å −2
4 2 ( 25)

0.707×2×1016
= #/cm2 =5.6×1014 cm-2
25
3a
Nearest neighbor atoms along body diagonal =
2
3
Radius = a = 2.17Å
4
Vacancies are missing atoms. Interstitials are extra atoms in between atoms (voids).

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 Prob. 1.5
Calculate densities of Si and GaAs.
The atomic weights of Si, Ga, and As are 28.1, 69.7, and 74.9, respectively.

Si: a = 5.43 ⋅10-8 cm, 8 atoms/cell

8 atoms 8
3
= 3
= 5 ⋅1022 cm1 3
a (
5.43 ⋅10-8cm )
g
5 ⋅1022 1
cm3
⋅ 28.1 mol
density = 23
= 2.33 cmg 3
6.02 ⋅10 1
mol

. We or
m W ina g

b)
ed e n
in
no W iss ea s
GaAs: a = 5.65 ⋅10-8 cm, 4 each Ga, As atoms/cell

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
4 4
e lu nt ns co

= =2.22 ⋅1022 cm1 3

th inc de f i es

3 3
a
of rk ( stu e o tat

( -8
5.65 ⋅10 cm )
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by

g
2.22 ⋅1022 1
⋅ ( 69.7 + 74.9 ) mol
y ar d le d
ro p an o te

cm3
density = = 5.33 cmg 3
st ny s d s ec

23
de f a rse de ot

6.02 ⋅10 1
s
ill o u vi pr

mol
w le co ro is
sa eir is p rk
th d wo

Prob. 1.6
an his

e
T

For InSb, find lattice constant, primitive cell volume, (110) atomic density.

3a
= 1.44≈ + 1.36≈ = 2.8≈
4
a = 6.47Å
a3
FCC unit cell has 4 lattice points ∴volume of primitive cell = = 67.7≈ 3
4
area of (110) plane = 2a 2

4 ⋅ 14 +2 ⋅ 12 2
density of In atoms = 2
= 2
= 3.37 ⋅1014 1
cm2
2a a

same number of Sb atoms = 3.37 ⋅1014 1

cm2

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 Prob. 1.7
Sketch an FCC lattice unit cell (lattice constant = 5Å) with a monoatomic basis, and
calculate the atomic density per unit area on (110) planes. What is the atomic density per
unit volume? Indicate an interstitial defect in this cell?
Area of (110) plane = a a 2 ( )
2
(( ) )
= 5 5 2 Å

1 1
Number of atoms = 4 × + 2 × = 2
4 2
2
Areal density = atoms/Å 2
25 2
(1Å = 10 -8
cm )
= 0.057×1016 atoms/cm 2

. We or
= 5.7×1014 atoms/cm 2

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
Volume of unit cells = a 3 = (125) Å3 = 1.25×10-22 cm3 d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co

1 1
Number of atoms/unit cell = 8× + 6× = 4
th inc de f i es
of rk ( stu e o tat

8 2
ity o g us d S
te is ss th ite

4
in f th se for Un

Volume density = atoms/cm3

gr w in e
th t o a ly by

1.25×10-22
y ar d le d
ro p an o te
st ny s d s ec

= 3.2×1022 atoms/cm3
de f a rse de ot

s
ill o u vi pr
w le co ro is

An interstitial defect is marked on the FCC sketch above.

sa eir is p rk
th d wo
an his

Prob. 1.8
T

Draw <110> direction of diamond lattice.

This view is tilted slightly from (110) to show the

alignment of atoms. The open channels are
hexagonal along this direction.

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 Prob. 1.9
Show bcc lattice as interpenetrating sc lattices.

view direction

The shaded points are one sc lattice.

The open points are the interpenetrating
sc lattice located a/2 behind the plane of
the front shaded points.

Prob. 1.10

. We or
(a) Find number of Si atoms/cm2 on (100) surface.

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig

fcc lattice with a = 5.43Å

or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es

number atoms per (100) surface = 4 ⋅ 14 + 1 = 2 atoms

of rk ( stu e o tat
ity o g us d S

a=5.43Ǻ
te is ss th ite

2
in f th se for Un

atoms per (100) surface area = = 6.78 ⋅1014 1

gr w in e
th t o a ly by

2 cm2
(5.43Å )
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo

(b) Find the nearest neighbor distance in InP.

an his

e
T

fcc lattice with a = 5.87Å

a 5.87Å
nearest neighbor distance = ⋅ 2= ⋅ 2 =4.15Å
2 2

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 Prob. 1.11
Find NaCl density.
Na +: atomic weight 23g/mol, radius 1Ǻ
Cl -: atomic weight 35.5g/mol, radius 1.8Ǻ
unit cell with a = 2.8Å by hard sphere approximation
g g
1 atoms
⋅ 23 mol + 12 atoms
cell ⋅ 35.5 mol g
½ Na and ½ Cl atoms per unit cell = 2 cell
= 4.86 ⋅10-23 cell
6.02 ⋅1023 atoms
mol

g
4.86 ⋅10-23 cell
density = -8 3 1
= 2.2 cmg 3
(2.8 ⋅10 cm) cell

The hard sphere approximation is comparable with the measured 2.17 cmg 3 density.

Prob. 1.12

. We or
m W ina g

b)
ed e n
in
no W iss ea s
Find packing fraction, B atoms per unit volume, and A atoms per unit area.

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y

A B A Note: The atoms are the same size and touch each
w d le tr p

er ld
e lu nt ns co

4Å
th inc de f i es

other by the hard sphere approximation.

of rk ( stu e o tat
ity o g us d S

A B A
te is ss th ite

radii of A and B atoms are then 1Ǻ

in f th se for Un

A B A
gr w in e
th t o a ly by

4Å
y ar d le d
ro p an o te

number of A atoms per unit cell = 8 ⋅ 18 = 1

st ny s d s ec

A B A
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk

number of B atoms per unit cell = 1

th d wo

4Å
an his

e
T

volume of atoms per unit cell = 1⋅ 4π3 ⋅ (1Å)3 + 1 ⋅ 4π3 ⋅ (1Å)3 = 8π

3 Å3

volume of unit cell = (4Å)3 = 64Å3

Å3 8π
3 π
packing fraction = 3
= = 0.13 = 13%
64Å 24

1 atom
B atoms volume density = = 1.56 ⋅1022 1
cm3
64Å3

number of A atoms on (100) plane = 4 ⋅ 14 = 1

1 atom
A atoms (100) aerial density = 2
= 6.25 ⋅1014 1
cm2
(4Å)

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 Prob. 1.13
Find atoms/cell and nearest neighbor distance for sc, bcc, and fcc lattices.
sc
sc: atoms/cell = 8 ⋅ 18 = 1 lattice

a
2
nearest neighbor distance = a

bcc: atoms/cell = 8 ⋅ 18 + 1 = 2 bcc

lattice
a
a⋅ 3 2 √3
nearest neighbor distance = a
2 2
a
2 √2

. We or
fcc: atoms/cell = 8 ⋅ 18 + 6 ⋅ 12 = 4

m W ina g
fcc

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
lattice
d th g. in t la a
an on in rs h
k g rn to rig

a 2 √2
or in a uc y

a⋅ 2
w d le tr p

er ld
e lu nt ns co

nearest neighbor distance = 2

th inc de f i es

2
of rk ( stu e o tat

a
ity o g us d S
te is ss th ite

2
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr

Prob. 1.14
w le co ro is
sa eir is p rk
th d wo

Draw cubes showing four {111} planes and four {110} planes.
an his

e
T

{111} planes

{110} planes

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 Prob. 1.15
Find fraction occupied for sc, bcc, and diamond lattices.
sc: atoms/cell = 8 ⋅ 18 = 1
sc
a lattice
nearest neighbor = a à radius = a
2
3
4π ⎛ a ⎞ π ⋅ a3
atom sphere volume = ⋅ ⎜ ⎟ =
3 ⎝ 2 ⎠ 6

unit cell volume = a 3

π ⋅ a3
1⋅
fraction occupied = 6 = π = 0.52
3
a 6
bcc
bcc: atoms/cell = 8 ⋅ 18 + 1 = 2 lattice
a

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
a⋅ 3 a⋅ 3 d th g. in t la
an on in rs h
nearest neighbor = à radius =
k g rn to rig
or in a uc y

2 4
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat

3
4π ⎛ a ⋅ 3 ⎞ π ⋅ 3 ⋅ a3
ity o g us d S

atom sphere volume = =

te is ss th ite

⋅ ⎜⎜ ⎟
3 ⎝ 4 ⎟⎠ a
in f th se for Un

16
gr w in e

2 √3
th t o a ly by
y ar d le d

a
ro p an o te
st ny s d s ec

unit cell volume = a 3

de f a rse de ot

2
s
ill o u vi pr
w le co ro is

π ⋅ 3 ⋅ a3
sa eir is p rk

a
th d wo

2⋅
π⋅ 3 2 √2
an his

fraction occupied = 16 = = 0.68

T

3
a 8
diamond: atoms/cell = 4 (fcc) + 4 (offset fcc) = 8 diamond
lattice
a⋅ 3 a⋅ 3 a/2
nearest neighbour = à atom radius =
4 8
3
4π ⎛ a ⋅ 3 ⎞ π ⋅ 3 ⋅ a3
atom sphere volume = ⋅ ⎜⎜ ⎟ =
3 ⎝ 8 ⎟⎠ 128
a
unit cell volume = a 3 4 √3
a
π⋅ 3 ⋅a 3
4
8⋅
128 π⋅ 3 a
fraction occupied = = = 0.34
a 3
16 4 √2

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 Prob. 1.16
Calculate densities of Ge and InP.
The atomic weights of Ge, In, and P are 72.6, 114.8, and 31, respectively.

Ge: a = 5.66 ⋅10-8 cm, 8 atoms/cell

8 atoms 8
3
= 3
= 4.41⋅1022 cm1 3
a 5.66 ⋅10-8cm
( )
g
4.41⋅1022 1
cm3
⋅ 72.6 mol
density = = 5.32 cmg 3
6.02 ⋅1023 1
mol

GaAs: a = 5.87 ⋅10-8 cm, 4 each In, P atoms/cell

4 4

. We or
m W ina g
= =1.98 ⋅1022 1

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
3 3 cm3
a (5.87 ⋅10-8cm ) d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es

g
1.98 ⋅1022 1
⋅ (114.8+31) mol
of rk ( stu e o tat

cm3
density = = 4.79 cmg 3
ity o g us d S

23
6.02 ⋅10 1
te is ss th ite
in f th se for Un

mol
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec

Prob. 1.17
de f a rse de ot

s
ill o u vi pr
w le co ro is

Sketch diamond lattice showing four atoms of interpenetrating fcc in unit cell..
sa eir is p rk
th d wo
an his

e
T

Full Interpenetrating Lattice Four Interpenetrating Atoms in Unit Cell

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 Prob. 1.18
Find AlSbxAs1-x to lattice match InP and give band gap.
Lattice constants of AlSb, AlAs, and InP are 6.14Ǻ, 5.66Ǻ, and 5.87Ǻ, respectively from
Appendix III. Using Vegard’s Law,

6.14Å ⋅ x + 5.66Å ⋅ (1 − x) = 5.87Å → x = 0.44

AlSb0.44As0.56 lattice matches InP and has Eg=1.9eV from Figure 1-13.

Find InxGa1-x P to lattice match GaAs and give band gap.

Lattice constant of InP, GaP, and GaAs are 5.87Ǻ, 5.45Ǻ, and 5.65Ǻ, respectively
from Appendix III. Using Vegard’s Law,

5.87Å ⋅ x + 5.45Å ⋅ (1 − x) = 5.65Å → x = 0.48

In0.48Ga0.52P lattice matches GaAs and has Eg=2.0eV from Figure 1-13.

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
Prob. 1.19 d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co

A Si crystal is to be grown by the Czochralski method, and it is desired that the ingot
th inc de f i es
of rk ( stu e o tat
ity o g us d S

contain 1016 phosphorus atoms/cm3.

te is ss th ite
in f th se for Un
gr w in e
th t o a ly by

(a) What concentration of phosphorus atoms should the melt contain to give this
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr

impurity concentration in the crystal during the initial growth? For P in Si, kd =
w le co ro is
sa eir is p rk
th d wo
an his

0.35.
T

(b) If the initial load of Si in the crucible is 5 kg, how many grams of phosphorus

should be added? The atomic weight of phosphorus is 31.

SOLUTION

(a) Assume that CS = kdCL throughout the growth. Thus the initial concentration of P

in the melt should be

1016
= 2.86 × 1016 cm −3
0.35

(b) The P concentration is so small that the volume of melt can be calculated from the

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 weight of Si. From Appendix III the density of Si is 2.33 g/cm3. In this example

we will neglect the difference in density between solid and molten Si.

5000 g of Si
3
= 2146 cm3 of Si
2.33 g/cm

2.86 × 1016 cm−3 × 2146 cm3 = 6.14 × 1019 P atoms

6.14 × 1019 atoms × 31 g/mole

23
= 3.16 × 10−3 g of P
6.02 × 10 atoms/mole

Since the P concentration in the growing crystal is only about one-third of that in the

melt, Si is used up more rapidly than P in the growth. Thus the melt becomes richer in P

. We or
as the growth proceeds, and the crystal is doped more heavily in the latter stages of

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig

growth. This assumes that kd is not varied; a more uniformly doped ingot can be grown
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat

by varying the pull rate (and therefore kd) appropriately. Modern Czochralski growth
ity o g us d S
te is ss th ite
in f th se for Un

systems use computer controls to vary the temperature, pull rate, and other parameters to
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

achieve fairly uniformly doped ingots.

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T

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